R. Mann

发表

Terence B. Hook, Atsushi Moriwaki, Matthew J. Breitwisch, 2003, IBM J. Res. Dev..

Limits of bias based assist methods in nano-scale 6T SRAM

Jiajing Wang, Benton H. Calhoun, Randy W. Mann, 2010, 2010 11th International Symposium on Quality Electronic Design (ISQED).

Bias-Induced Healing of $V_{\text {min}}$ Failures in Advanced SRAM Arrays

Randy W. Mann, William McMahon, Yoann Mamy Randriamihaja, 2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

HTOL SRAM Vmin shift considerations in scaled HKMG technologies

T. Nigam, B. Parameshwaran, S. Balasubramanian, 2014, Proceedings of the IEEE 2014 Custom Integrated Circuits Conference.

High-performance logic and high-gain analog CMOS transistors formed by a shadow-mask technique with a single implant step

M. Breitwisch, D. Hoyniak, R. Mann, 2002 .

Sub-threshold circuit design with shrinking CMOS devices

Jiajing Wang, Benton H. Calhoun, Randy W. Mann, 2009, 2009 IEEE International Symposium on Circuits and Systems.

Lateral ion implant straggle and mask proximity effect

J. Johnson, D. Hoyniak, P. Cottrell, 2003 .

Interactions of Technology and Design in Nanoscale SRAM

R. Mann, 2009 .

Tracking On-Chip Age Using Distributed, Embedded Sensors

Zhenyu Qi, Jiajing Wang, Adam C. Cabe, 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Silicides and local interconnections for high-performance VLSI applications

Paul D. Agnello, Randy W. Mann, Larry A. Clevenger, 1995, IBM J. Res. Dev..

The C49 to C54 Phase Transformation in TiSi2 Thin Films

Randy W. Mann, Lawrence A. Clevenger, R. Mann, 1994 .

Lowering the formation temperature of the C54-TiSi 2 phase using a metallic interfacial layer

F. d'Heurle, C. Cabral, R. Mann, 1997 .

In-Situ x-Ray Diffraction Analysis of TiSi 2 Phase Formation from a Titanium-Molybdenum Bilayer

C. Cabral, R. Mann, K. Saenger, 1996 .

Study of C49‐TiSi2 and C54‐TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing

C. Cabral, R. Mann, K. Saenger, 1994 .

Low temperature formation of C54–TiSi2 using titanium alloys

F. d'Heurle, C. Cabral, C. Lavoie, 1997 .

Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

Randy W. Mann, T. A. Knotts, Lawrence A. Clevenger, 1995 .

Kinetic analysis of C49‐TiSi2 and C54‐TiSi2 formation at rapid thermal annealing rates

Randy W. Mann, Lawrence A. Clevenger, C. Nobili, 1992 .

Titanium Silicides and their Technological Applications

R. Mann, L. Clevenger, 1993 .

Silicides and local interconnections for high -

R. Mann, 2002 .

Silicide Formation in Ti-Si and Co-Si REACTIONS

C. Cabral, R. Mann, G. Ottaviani, 1993 .

Reduction of the C54-TiSi 2 Phase Formation Temperature Using Metallic Impurities

F. d'Heurle, C. Cabral, R. Mann, 1995 .

TiSi2 phase transformation characteristics on narrow devices

Randy W. Mann, John E. Bertsch, Glen L. Miles, 1996 .

Titanium silicide/silicon nonohmic contact resistance for NFET's, PFET's, diffused resistors, and NPN's in a BiCMOS technology

E. Nowak, R. Mann, T. Hook, 1995 .

The C49 to C54-TiSi2 transformation in self-aligned silicide applications

Randy W. Mann, Q. Z. Hong, Lawrence A. Clevenger, 1993 .

Impact of circuit assist methods on margin and performance in 6T SRAM

Jiajing Wang, Benton H. Calhoun, Harold Pilo, 2010 .

Fluctuation limits & scaling opportunities for CMOS SRAM cells

S. Kosonocky, R. Mann, R. Mann, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Nonrandom Device Mismatch Considerations in Nanoscale SRAM

Benton H. Calhoun, Randy W. Mann, Terry B. Hook, 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.