I. Sakai

TED control technology for suppression of reverse narrow channel effect in 0.1 /spl mu/m MOS devices

A. Ono, R. Ueno, I. Sakai, 1997, International Electron Devices Meeting. IEDM Technical Digest.

A new BiCMOS gate array cell with diode connected bipolar driver

I. Sakai, T. Horiuchi, K. Yamazaki, 1990, Proceedings on Bipolar Circuits and Technology Meeting.

A new full CMOS SRAM cell structure

I. Sakai, O. Kudoh, H. Ooka, 1984, International Electron Devices Meeting.

Effects of substrate resistance on CMOS latchup holding voltages

Chenming Hu, R.K. Gupta, I. Sakai, 1987, IEEE Transactions on Electron Devices.

Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p^+ Poly-Si Gates

Tohru Mogami, Masao Fukuma, Lars E. G. Johansson, 1995 .

A new salicide process (PASET) for sub-half micron CMOS

I. Sakai, K. Okabe, H. Abiko, 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

Operation of CMOS devices with a floating well

Chenming Hu, H.P. Zappe, R.K. Gupta, 1987, IEEE Transactions on Electron Devices.

A reduced size CMOS SRAM cell structure with two-level Al interconnection

I. Sakai, H. Yamamoto, O. Kudoh, 1982, 1982 International Electron Devices Meeting.