C. Osburn

发表

Tunneling leakage in Ge preamorphized shallow junctions

D. Wen, S. Goodwin-Johansson, C. Osburn, 1988 .

Design and integration considerations for end-of-the roadmap ultrashallow junctions

Ajit K. Srivastava, C. Osburn, I. De, 2000 .

Fabrication of a miniature 8K‐bit memory chip using electron‐beam exposure

R. Dennard, C. Osburn, T. Chang, 1975 .

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L/sub eff/ and R/sub sd/ of LDD MOSFETs

Carlton M. Osburn, K. Ahmed, I. De, 2000 .

Impact of gate workfunction on device performance at the 50 nm technology node

Carlton M. Osburn, Ajit K. Srivastava, C. Osburn, 2000 .

Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices

Carlton M. Osburn, I. De, C. Osburn, 1999 .

Optimization of lightly-doped-drain (LDD) structure for sub-quarter-/spl mu/m devices using statistical design and response surface methodology

C. Osburn, J. Tsai, K. Zhang, 1995, 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.

THE EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON

C. Osburn, S. I. Raider, 1973 .

Accelerated Dielectric Breakdown of Silicon Dioxide Films

N. J. Chou, C. M. Osburn, C. Osburn, 1973 .

Auger analysis of chlorine in ``HCl‐ or Cl2‐grown'' SiO2 films

N. J. Chou, C. Osburn, Y. J. V. D. Meulen, 1973 .

Effect of electron trapping on IGFET characteristics

Carlton M. Osburn, T. H. Ning, T. Ning, 1977 .

Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxide

Tak H. Ning, Carlton M. Osburn, T. Ning, 1976 .

Electron trapping at positively charged centers in SiO2

Tak H. Ning, Carlton M. Osburn, T. Ning, 1975 .

Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs

N. A. Masnari, E. Vogel, C. Osburn, 1998 .

Stability of TiB2 as a Diffusion Barrier on Silicon

C. Osburn, J. Hunn, C. Choi, 1991 .

Optimization of the germanium preamorphization conditions for shallow-junction formation

Carlton M. Osburn, Eric C. Frey, Mehmet C. Öztürk, 1988 .

Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes

E. Bassous, C. M. Osburn, C. Osburn, 1975 .

IMPROVED DIELECTRIC RELIABILITY OF SIO2 FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES

C. Osburn, E. Bassous, 1975 .

Tisi 2 Thin Films Formed on Crystalline and Amorphous Silicon

C. Osburn, G. Rozgonyi, G. Mcguire, 1990 .

Formation of silicided, ultra-shallow junctions using low thermal budget processing

C. Osburn, 1990 .

The Effects of Contamination on Semiconductor Manufacturing Yield

C. Osburn, R. Donovan, Henry Berger, 2006 .

Electrical Properties of Single Crystals, Bicrystals, and Polycrystals of MgO

C. Osburn, R. Vest, 1971 .

The Effect of Mobile Sodium Ions on Field Enhancement Dielectric Breakdown in SiO2 Films on Silicon

C. Osburn, S. I. Raider, S. Raider, 1973 .

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

John R. Hauser, Sung-Joo Lee, Kam F. Yee, 2002, IBM J. Res. Dev..

The effect of annealing on resistivity of low pressure chemical vapor deposited titanium diboride

C. Osburn, C. Choi, G. Ruggles, 1991 .

Preparation and Characterization of LPCVD TiB 2 Thin Films

C. Osburn, C. Choi, G. Ruggles, 1990 .

Conditions for the absence of thermal breakdown in silicon nitride

C. Osburn, N. Klein, 1977, IEEE Transactions on Electron Devices.

Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

C. Osburn, S. Daryanani, D. Downey, 1997 .

DIBL considerations of extended drain structure for 0.1 /spl mu/m MOSFET's

C. Osburn, K. F. Yee, Jie Sun, 1996, IEEE Electron Device Letters.

Properties of Al2 O 3 Films Deposited from the AlCl3, CO 2, and H 2 System

C. Osburn, V. J. Silvestri, D. Ormond, 1978 .

Utrashallow junction formation by ion implant and RTA

C. Osburn, D. Downey, S. Marcus, 1997 .

1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

R.H. Dennard, P.W. Cook, T.H. Ning, 1979, IEEE Transactions on Electron Devices.

Partial agglomeration during Co silicide film formation

C. Osburn, G. Rozgonyi, Z. Xiao, 1992 .

Improved stability of thin cobalt disilicide films using BF2 implantation

C. Osburn, G. Mcguire, J. Tsai, 1992 .

Agglomeration of Cobalt Silicide Films

C. Osburn, G. Rozgonyi, Z. Xiao, 1990 .

Ultra Shallow Junction Formation Using Diffusion from Silicides III . Diffusion into Silicon, Thermal Stability of Silicides, and Junction Integrity

C. Osburn, G. Rozgonyi, H. Jiang, 1992 .

Ultra Shallow Junction Formation Using Diffusion from Silicides I . Silicide Formation, Dopant Implantation and Depth Profiling

C. Osburn, G. Rozgonyi, D. Griffis, 1992 .

Electrical characteristics of TiB/sub 2/ for ULSI applications

C. Osburn, Q. Wang, C. Choi, 1992 .

Optimization and Characterization of LPCVD TiB2 for ULSI Applications

C. Osburn, C. Choi, G. Ruggles, 1991 .

Incorporation of metal silicides and refractory metals in VLSI technology

C. Osburn, G. Rozgonyi, M. Kellam, 1991 .

Self-Aligned Epitaxial Cosi 2 Formation From Multilayer Co/Ti-Si(100) by a Two-Step Rta Process

C. Osburn, G. Rozgonyi, B. Patnaik, 1993 .

Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget

Carlton M. Osburn, C. Osburn, Q. F. Wang, 1992 .

The effects of titanium silicide formation on dopant redistribution

C. Osburn, D. Sharma, W. Chu, 1988 .

Defect annihilation in shallow p+ junctions using titanium silicide

D. Wen, C. Osburn, G. Rozgonyi, 1987 .

Use of scanning tunneling microscopy and transmission electron microscopy to quantify and characterize CoSi2 roughness

C. Osburn, G. Mcguire, P. Smith, 1992 .

Thermal Stability of Thin Submicrometer Lines of CoSi2

C. Osburn, G. Mcguire, Q. F. Wang, 1993 .

Low parasitic resistance contacts for scaled ULSI devices

Carlton M. Osburn, C. Osburn, K. Bellur, 1998 .

Silicon Consumption During Self-Aligned Titanium Suicide Formation on Shallow Junctions

D. Wen, C. Osburn, G. Mcguire, 1989 .

Challenges in advanced semiconductor technology for high-performance and supercomputer applications

Carlton M. Osburn, Arnold Reisman, C. Osburn, 1987, The Journal of Supercomputing.

Challenges in advanced semiconductor technology in the ulsl era for computer applications

Carlton M. Osburn, Arnold Reisman, C. Osburn, 1987 .

Defect structure and electrical properties of Nio—II. Temperatures below equilibration*

C. Osburn, R. Vest, 1971 .

Defect structure and electrical properties of NiO—I. High temperature

C. Osburn, R. Vest, 1971 .

1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography

B.L. Crowder, A. Cramer, W.R. Hunter, 1979, IEEE Journal of Solid-State Circuits.

1 µm MOSFET VLSI technology: Part V—A single-level polysilicon technology using electron-beam lithography

B.L. Crowder, A. Cramer, L. Ephrath, 1979, IEEE Transactions on Electron Devices.

Dielectric Breakdown in Silicon Dioxide Films on Silicon II . Influence of Processing and Materials

D. W. Ormond, C. M. Osburn, C. Osburn, 1972 .

Dielectric Breakdown in Silicon Dioxide Films on Silicon I . Measurement and Interpretation

D. W. Ormond, C. M. Osburn, C. Osburn, 1972 .

The impact of in-situ rapid thermal gate dielectric processes on deep submicron MOSFETs

C. Osburn, K. Zhang, 1997 .

Emission probability of hot electrons from silicon into silicon dioxide

Tak H. Ning, Carlton M. Osburn, T. Ning, 1977 .

Detection of anomalous defect‐enhanced diffusion using advanced spreading resistance measurements and analysis

C. Osburn, P. Rai-Choudhury, R. Mazur, 1994 .

PIEZOELECTRIC MEASUREMENTS USING AN ATOMIC FORCE MICROSCOPE

A. Kingon, C. Osburn, R. Nemanich, 1999 .

Characterization of thin oxide films for FET applications

C. Osburn, 1975 .

The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures

C. Osburn, T. Sedgwick, J. M. Green, 1974 .

Electrical properties of NiO grain boundaries

C. Osburn, R. Vest, 1971 .

The Effect of Silicon Wafer Imperfections on Minority Carrier Generation and Dielectric Breakdown in MOS Structures

C. Osburn, D. Ormond, 1974 .

Absence of non-shorting breakdown behaviour in AlSi3N4Si structures

C. Osburn, J. M. Eldridge, N. Klein, 1975 .

Analysis of the effects of scaling on interconnect delay in ULSI circuits

S. Bothra, M. Kellam, C. M. Osburn, 1993 .

Effects of ion implantation on deep-submicrometer, drain-engineered MOSFET technologies

C. M. Osburn, C. Osburn, M. G. Stinson, 1991 .

Characterization of Enhanced Perimeter Leakage in MOS Structures Following Ion Implantation

C. Osburn, M. Stinson, 1990 .

A knock‐on model to explain enhanced perimeter leakage in ion‐implanted metal‐oxide‐semiconductor structures

C. Osburn, M. Stinson, 1990 .

Properties of SiO2 Grown in the Presence of HCl or Cl2

J. Ziegler, C. Osburn, Y. J. V. D. Meulen, 1975 .

Metal Silicides: Active elements of ULSI contacts

Carlton M. Osburn, C. Osburn, J. Tsai, 1996 .

Optimization of primary beam conditions for secondary ion mass spectrometry depth profiling of shallow junctions in silicon using a Cameca IMS‐3f

C. Osburn, D. Griffis, S. Corcoran, 1990 .

Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors

N. A. Masnari, C. Osburn, R. Bartholomew, 1998 .

Elevated n/sup +//p junctions by implant into CoSi/sub 2/ formed on selective epitaxy for deep submicron MOSFETs

C. Osburn, J. Tsai, Jie J. Sun, 1998 .

Elevated n /p Junctions by Implant into CoSi Formed on Selective Epitaxy for Deep Submicron MOSFET's

C. Osburn, J. Tsai, Jie J. Sun, 1998 .

Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon

C. M. Osburn, C. Osburn, E. J. Weitzman, 1972 .

Materials and device issues in the formation of sub-100-nm junctions

C. Osburn, G. Mcguire, Q. F. Wang, 1993 .

Elimination of End‐of‐Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation

D. Wen, C. Osburn, G. Rozgonyi, 1989 .

Sodium‐Induced Barrier‐Height Lowering and Dielectric Breakdown on SiO2 Films on Silicon

C. Osburn, D. Ormond, 1974 .

Fabrication of organic nanoparticles by PRINT: master generation using lithographic and RIE techniques

Carlton M. Osburn, Joseph M. DeSimone, David G. Vellenga, 2006, SPIE Advanced Lithography.

Microsensor engineering

C. M. Osburn, C. Osburn, 1996, Emerging Technologies: Designing Low Power Digital Systems.

1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints

R.H. Dennard, P.W. Cook, T.H. Ning, 1979, IEEE Journal of Solid-State Circuits.

SODIUM-INDUCED BARRIER-HEIGHT LOWERING AND DIELECTRIC BREAKDOWN ON SIO2 FILMS ON SILICON

C. Osburn, D. Ormond, 1974 .

Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing

C. M. Osburn, T. Brat, J. Liu, 1986 .

The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs

N. A. Masnari, C. Osburn, R. Bartholomew, 1997 .