D. Mercer

A shallow trench isolation study for 0.25/0.18 /spl mu/m CMOS technologies and beyond

I. Chen, A. Chatterjee, J. Esquivel, 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

Disordered intermixing at the platinum:silicon interface demonstrated by high‐resolution cross‐sectional transmission electron microscopy, Auger electron spectroscopy, and MeV ion channeling

C. R. Helms, Ki-Bum Kim, T. Sigmon, 1988 .

Novel device concept for silicon based infrared detectors

C. R. Helms, D. Mercer, G. Scott, 1991 .

Nickel SALICIDE technology for sub-100nm CMOS devices

D. Mercer, J. P. Lu, Donald S. Miles, 2004 .

Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

Bill Y. Lin, T. Bonifield, F. Johnson, 2006, 2006 International Workshop on Junction Technology.

Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

D. Mercer, N. Yu, A. Jain, 1998 .

A diffusion model for the internal photoresponse of PtSi/p‐Si Schottky barrier diodes

C. R. Helms, D. Mercer, 1989 .