K. F. Yee

Design and integration considerations for end-of-the roadmap ultrashallow junctions

Ajit K. Srivastava, C. Osburn, I. De, 2000 .

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

John R. Hauser, Sung-Joo Lee, Kam F. Yee, 2002, IBM J. Res. Dev..

DIBL considerations of extended drain structure for 0.1 /spl mu/m MOSFET's

C. Osburn, K. F. Yee, Jie Sun, 1996, IEEE Electron Device Letters.