H. Umimoto

A statistical critical dimension control at CMOS cell level

A. Misaka, A. Goda, K. Matsuoka, 1996, International Electron Devices Meeting. Technical Digest.

Three-dimensional numerical simulation of local oxidation of silicon

S. Odanaka, H. Umimoto, H. Umimoto, 1991 .

A 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing in an NH/sub 3/ ambient

H. Umimoto, M. Segawa, T. Yabu, 1996, International Electron Devices Meeting. Technical Digest.

Multi-Dimensional Numerical Modeling for Thermal Oxidation of Silicon

H. Umimoto, S. Odanaka, 1991 .

Depth Profiles of Boron Atoms with Large Tilt‐Angle Implantations

Shinji Odanaka, Hiroyuki Umimoto, Takashi Ohzone, 1986 .

Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon

H. Umimoto, S. Odanaka, T. Noda, 2000 .

High speed 0.1 /spl mu/m dual gate CMOS with low energy phosphorus/boron implantation and cobalt salicide

M. Takase, A. Kanda, H. Umimoto, 1996, International Electron Devices Meeting. Technical Digest.

A 0.05 /spl mu/m-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealing

Kyoji Yamashita, Atsushi Hori, Shinji Odanaka, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Numerical modeling of nonplanar oxidation coupled with stress effects

Shinji Odanaka, Hiroyuki Umimoto, Hideya Esaki, 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

A self-aligned retrograde twin-well structure with buried p/sup +/-layer

T. Ohzone, T. Yabu, S. Odanaka, 1989, IEEE Electron Device Letters.