J. Richmond

发表

A. Agarwal, S. Ryu, S. Krishnaswami, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, IEEE Electron Device Letters.

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

10-kV, 123-mOcm2 4H-SiC power DMOSFETs

A. Agarwal, S. Ryu, S. Krishnaswami, 2004 .

10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Recent progress in SiC DMOSFETs and JBS diodes at Cree

Sei-Hyung Ryu, Qingchun Zhang, B. Hull, 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.

Ultra High Power 10 kV, 50 A SiC PiN Diodes

B. Hull, J. Richmond, M. Das, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

J. Richmond, R. Callanan, M. Das, 2008 .

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

A. Agarwal, J. Richmond, J. Palmour, 2010 .

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

J. Richmond, J. Palmour, Ranbir Singh, 2002 .

9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

J. Richmond, R. Callanan, J. Palmour, 2009, 2009 IEEE Pulsed Power Conference.

900V silicon carbide MOSFETs for breakthrough power supply design

A. Barkley, J. Casady, S. Ryu, 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

J. Casady, S. Ryu, B. Hull, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Advanced HF SiC MOS devices

A. Agarwal, S. Ryu, B. Hull, 2009, 2009 13th European Conference on Power Electronics and Applications.

New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications

J. Casady, B. Hull, J. Richmond, 2015 .

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

David Grider, Lin Cheng, John W. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2002 .

Progress in Silicon Carbide Power Devices

Brett Hull, John Palmour, Mrinal Das, 2006, 2006 64th Device Research Conference.

Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules

Anant K. Agarwal, J. Neil Merrett, Scott Leslie, 2010 .

4H-SiC DMOSFETs for High Speed Switching Applications

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2005 .

1000-V, 30-A 4H-SiC BJTs with high current gain

S. Bayne, C. Scozzie, S. Balachandran, 2005, IEEE Electron Device Letters.

Recent progress in SiC bipolar junction transistors

S. Bayne, C. Scozzie, Sei-Hyung Ryu, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

Development of 10 kV 4H-SiC Power DMOSFETs

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2004 .

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

B. Hull, J. Richmond, A. Hefner, 2008 .

High power, drift-free 4H-SiC PiN diodes

S. Krishnaswami, B. Hull, J. Richmond, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Ultra high voltage MOS controlled 4H-SiC power switching devices

C. W. Tipton, J. Casady, S. Ryu, 2015 .

High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

A. Agarwal, S. Ryu, J. Richmond, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

A. Agarwal, T. Chow, S. Ryu, 2005 .

SiC BJT Technology for Power Switching and RF Applications

A. Agarwal, T. Chow, S. Ryu, 2004 .

SiC BJT's for High Power Switching and RF Applications

A. Agarwal, S. Ryu, J. Richmond, 2002 .

27 kV, 20 A 4H-SiC n-IGBTs

Lin Cheng, C. W. Tipton, John W. Palmour, 2015 .

950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2006 .

A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Brett Hull, Mrinal K. Das, B. Hull, 2006 .

A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules

B. Hull, J. Richmond, M. Das, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

Allen R. Hefner, John W. Palmour, David W. Berning, 2002 .

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

Scott Allen, Akin Akturk, John W. Palmour, 2018, Materials Science Forum.

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

S. Ryu, B. Hull, J. Richmond, 2020 .

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

Brett Hull, Adrian Powell, Mrinal K. Das, 2005 .

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

SiC MOSFET Reliability Update

Jim Richmond, Zoltan Ring, Mrinal K. Das, 2012 .

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Anant K. Agarwal, John W. Palmour, Brett Hull, 2006 .

Development of A 4H-SiC CMOS Inverter

Sei-Hyung Ryu, John W. Palmour, Brett Hull, 2006 .

SiC Power Devices – An Overview

A. Agarwal, S. Ryu, S. Krishnaswami, 2004 .

2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications

Sei-Hyung Ryu, S. Krishnaswami, J. Richmond, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs

Anant K. Agarwal, John W. Palmour, Brett Hull, 2006 .

Methodology to qualify silicon carbide MOSFETs for single shot avalanche events

V. Pala, S. Allen, B. Hull, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Anant K. Agarwal, Aivars J. Lelis, John W. Palmour, 2010 .

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Qingchun Zhang, J. Richmond, B. Hull, 2008, IEEE Transactions on Electron Devices.

An overview of Cree silicon carbide power devices

S. Krishnaswami, S.-H. Ryu, J. Richmond, 2004, Power Electronics in Transportation (IEEE Cat. No.04TH8756).

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

S. Ryu, B. Hull, J. Richmond, 2015 .

Surge current failure mechanisms in 4H-SiC JBS rectifiers

A. Barkley, B. Hull, J. Richmond, 2018, International Symposium on Power Semiconductor Devices and IC's.

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

S. Krishnaswami, J. Richmond, A. Agarwal, 2006, IEEE Transactions on Industry Applications.

3300 V, 30 A 4H-SiC power DMOSFETs

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Semiconductor Device Research Symposium.

10.3 m/spl Omega/-cm/sup 2/, 2 kV Power DMOSFETs in 4H-SiC

A. Agarwal, Sei-Hyung Ryu, J. Palmour, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

A. Agarwal, J. Richmond, J. Palmour, 2002, IEEE Electron Device Letters.

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

B. Hull, J. Richmond, M. Das, 2006 .

Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs

Gangyao Wang, Scott Allen, P. Killeen, 2016 .

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2012 .

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.