J. Palmour

发表

20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems

A. Agarwal, B. Hull, R. Callanan, 2009, 2009 IEEE Energy Conversion Congress and Exposition.

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, IEEE Electron Device Letters.

The critical charge density of 4H-SiC thyristors

J. Palmour, M. Levinshtein, Sergey L. Rumyanetsev, 1998 .

SiC power Schottky and PiN diodes

M. Melloch, T. Chow, J. Cooper, 2002 .

Silicon carbide high-power devices

M. Bhatnagar, J. Palmour, C. Weitzel, 1996 .

SiC Power Devices for Microgrids

A. Agarwal, S. Ryu, R. Callanan, 2010, IEEE Transactions on Power Electronics.

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Silicon carbide power device development for industrial markets

J. Palmour, 2014, 2014 IEEE International Electron Devices Meeting.

10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation

A. Agarwal, A. Hefner, M. Das, 2011, 2011 IEEE Electric Ship Technologies Symposium.

Development of high-current 4H-SiC ACCUFET

M. Das, J. Palmour, Ranbir Singh, 2003 .

Silicon carbide for power devices

J. Palmour, C. Carter, R. Singh, 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

O. W. Holland, K. McDonald, L. Feldman, 2001, IEEE Electron Device Letters.

10-kV, 123-mOcm2 4H-SiC power DMOSFETs

A. Agarwal, S. Ryu, S. Krishnaswami, 2004 .

10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

1500 V, 4 amp 4H-SiC JBS diodes

Jih-Sheng Lai, Allen R. Hefner, John W. Palmour, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

New generation 6.5 kV SiC power MOSFET

Scott Allen, Edward Van Brunt, Brett Hull, 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

SiC power devices for Smart Grid systems

A. Agarwal, R. Callanan, M. Das, 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

Progress in the industrial production of SiC substrates for semiconductor devices

J. Palmour, Ranbir Singh, C. Carter, 2001 .

22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

A. Huang, J. Palmour, C. Scozzie, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices

A. Agarwal, J. Palmour, M. Levinshtein, 2011 .

Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors

A. G. Tandoev, J. Palmour, M. Levinshtein, 2017 .

Transient collector modulation of 4H–SiC BJTs during switch-on process

J. Palmour, M. Levinshtein, V. Yuferev, 2016 .

Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors

J. Palmour, M. Levinshtein, Lin Cheng, 2014 .

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

M. Shur, A. Agarwal, J. Palmour, 2012 .

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

J. Palmour, M. Levinshtein, Ranbir Singh, 1999 .

Temperature dependence of turn-on processes in 4H–SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2001 .

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

J. Palmour, M. Levinshtein, Ranbir Singh, 2001 .

Current rise time constants in switch-on process of SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2002 .

Steady-state and transient characteristics of 10 kV 4H-SiC diodes

J. Palmour, M. Levinshtein, Ranbir Singh, 2004 .

High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

V. A. Krivutsa, B. Hull, M. Das, 2005 .

Power bipolar devices based on silicon carbide

A. Agarwal, J. Palmour, M. Levinshtein, 2005 .

High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime

B. Hull, M. Das, J. Palmour, 2006 .

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

A. Agarwal, J. Richmond, J. Palmour, 2010 .

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

J. Richmond, J. Palmour, Ranbir Singh, 2002 .

9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

J. Richmond, R. Callanan, J. Palmour, 2009, 2009 IEEE Pulsed Power Conference.

Design and Fabrications of High Voltage IGBTs on 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

A. Agarwal, J. Palmour, J. Sumakeris, 2008 .

Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor

A. Agarwal, S. Ryu, J. Palmour, 2001 .

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

A. Agarwal, S. Krishnaswami, J. Palmour, 2006, IEEE Transactions on Electron Devices.

Design and Characterization of High-Voltage 4H-SiC p-IGBTs

A. Agarwal, A. Huang, S. Ryu, 2008, IEEE Transactions on Electron Devices.

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, International Symposium on Power Semiconductor Devices and IC's.

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

M. Shur, A. Agarwal, S. Ryu, 2009 .

Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor

M. E. Levinshtein, A. Agarwal, J. Palmour, 2001 .

900V silicon carbide MOSFETs for breakthrough power supply design

A. Barkley, J. Casady, S. Ryu, 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

J. Casady, S. Ryu, B. Hull, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Advanced HF SiC MOS devices

A. Agarwal, S. Ryu, B. Hull, 2009, 2009 13th European Conference on Power Electronics and Applications.

New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications

J. Casady, B. Hull, J. Richmond, 2015 .

SiC and GaN Wide Bandgap Device Technology Overview

J. Palmour, Y. Wu, S. Sheppard, 2007, 2007 IEEE Radar Conference.

Record-low 10mΩ SiC MOSFETs in TO-247, rated at 900V

J. Casady, B. Hull, J. Palmour, 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

M. Shur, J. Palmour, R. Davis, 1991, Proc. IEEE.

Third quadrant behavior of SiC MOSFETs

J. Rice, R. Callanan, J. Palmour, 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

High-power 4H-SiC JBS rectifiers

J. Lai, A. Hefner, J. Palmour, 2002 .

High performance, ultra high voltage 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs

Fei Wang, Alex Q. Huang, Gangyao Wang, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Development of 15 kV 4H-SiC IGBTs

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2012 .

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

David Grider, Lin Cheng, John W. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2002 .

Progress in Silicon Carbide Power Devices

Brett Hull, John Palmour, Mrinal Das, 2006, 2006 64th Device Research Conference.

High switching performance of 1.7kV, 50A SiC power MOSFET over Si IGBT for advanced power conversion applications

Subhashish Bhattacharya, Ankan De, Lin Cheng, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

High Power and High Frequency Silicon Carbide Devices

J. Palmour, C. Weitzel, C. Carter, 1994 .

Silicon Carbide MESFET's for High-Power S-Band Applications

John W. Palmour, J. Palmour, J. Sumakeris, 1997 .

SiC device technology: remaining issues

John W. Palmour, A. V. Suvorov, Calvin H. Carter, 1997 .

Silicon carbide MESFETs for high-power S-band applications

J. Palmour, C. Carter, S. Allen, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K

Griff L. Bilbro, C. W. Hatfield, S. T. Allen, 1998 .

Recent Progress in SiC Microwave MESFETs

R. A. Sadler, John W. Palmour, Scott Allen, 1999 .

6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop

Yoshitaka Sugawara, Katsunori Asano, John W. Palmour, 2000 .

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

A. Agarwal, S. Ryu, J. Palmour, 2000 .

1800 V NPN bipolar junction transistors in 4H-SiC

R. Singh, A. Agarwal, S. Ryu, 2001, IEEE Electron Device Letters.

4H-SiC DMOSFETs for High Speed Switching Applications

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2005 .

Electrical Characterization of PiN Diode Structures in 6H-SiC

C. T. Gardner, M. Melloch, J. Cooper, 1992 .

1000-V, 30-A 4H-SiC BJTs with high current gain

S. Bayne, C. Scozzie, S. Balachandran, 2005, IEEE Electron Device Letters.

Power amplification in UHF band using SiC RF power BJTs

A. Agarwal, J. Palmour, C. Capell, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Recent progress in SiC bipolar junction transistors

S. Bayne, C. Scozzie, Sei-Hyung Ryu, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

Zero voltage switching characterization of 12 kV SiC N-IGBTs

David Grider, B. Jayant Baliga, Arun Kadavelugu, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

High voltage SiC diodes with small recovery time

Pavel Ivanov, Michael E. Levinshtein, S. N. Yurkov, 2000 .

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

K. Doverspike, J. Palmour, S. Allen, 1999, IEEE Electron Device Letters.

Applications of SiC MESFETs and GaN HEMTs in power amplifier design

J. Palmour, J. Sumakeris, S. Allen, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers

J. Palmour, S. Allen, R.P. Smith, 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

Development of 10 kV 4H-SiC Power DMOSFETs

Anant K. Agarwal, John W. Palmour, Jim Richmond, 2004 .

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

A. Agarwal, S. Ryu, M. Das, 2007 .

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2006 .

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

A. Agarwal, S. Ryu, J. Palmour, 2004 .

Surge current capabilities and isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

J. Palmour, M. Levinshtein, Q. Zhang, 2015 .

Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin Films

J. Palmour, R. Davis, D. Griffis, 1989 .

SiC MOS interface characteristics

J. Palmour, M. Ghezzo, J. Kretchmer, 1994 .

Large area 4H-SiC power MOSFETs

Anant K. Agarwal, Sei-Hyung Ryu, John W. Palmour, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Low Interface State Density Oxides on P-Type SiC

J. Palmour, L. Lipkin, D.B. Slater, Jr., 1997 .

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

1/f noise in forward biased high voltage 4H-SiC Schottky diodes

N. M. Shmidt, J. Palmour, M. Levinshtein, 2014 .

Low frequency noise in 4H-SiC BJTs

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

650V, 7mOhm SiC MOSFET Development for Dual-Side Sintered Power Modules in Electric Drive Vehicles

Monty B. Hayes, Erich W. Gerbsch, J. Casady, 2017 .

Experimental characterization of electron-hole generation in silicon carbide

M. Melloch, J. Cooper, J. Palmour, 1996 .

Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs

B. Hull, J. Palmour, E. van Brunt, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

M. Shur, B. Hull, M. Das, 2008 .

5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

J. Palmour, M. Paisley, C. Carter, 1998 .

Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout

S. Ryu, B. Hull, J. Palmour, 2022, Materials Science Forum.

Applications for 6H-Silicon Carbide Devices

J. Palmour, C. Carter, H. Kong, 1992 .

AlGaN-GaN HEMTs: material, device, circuit technology and applications

J. Palmour, U. Mishra, M. Moore, 2003, 2003 International Symposium on Compound Semiconductors.

GaN HEMTs: material, device, circuit technology and applications

J. Palmour, U. Mishra, M. Moore, 2004, International Meeting for Future of Electron Devices, 2004..

Chemical Etching of Ion Implanted Amorphous Silicon Carbide

J. Palmour, R. Davis, J. Edmond, 1986 .

4H-SiC MESFET's on high resistivity substrates with 30 GHz f/sub max/

J. Palmour, C. Weitzel, C. Carter, 1995, 1995 53rd Annual Device Research Conference Digest.

Energy Efficient Wide Bandgap Devices

J. Palmour, 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

A. Agarwal, M. Das, J. Palmour, 2004 .

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

S. Ryu, B. Hull, J. Palmour, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Transient processes in high-voltage silicon carbide bipolar-junction transistors

A. Agarwal, J. Palmour, M. Levinshtein, 2013 .

A review of the status of diamond and silicon carbide devices for high-power, -temperature, and -frequency applications

Robert F. Davis, J. W. Palmour, R. F. Davis, 1990, International Technical Digest on Electron Devices.

High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films

Robert F. Davis, J. W. Palmour, J. Palmour, 1987 .

Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

A. G. Tandoev, J. Palmour, M. Levinshtein, 2017 .

Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection

A. G. Tandoev, J. Palmour, M. Levinshtein, 2013 .

Isothermal current–voltage characteristics of high-voltage silicon carbide rectifier p–i–n diodes at very high current densities

B. Hull, M. Das, J. Palmour, 2007 .

On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 1998 .

Deep-level dominated current-voltage characteristics of buried implanted oxide silicon-on-insulator

J. Palmour, J. Wortman, J. Posthill, 1989, IEEE Electron Device Letters.

Challenges and State-of-the-Art of Oxides on SiC

M. Das, J. Palmour, L. Lipkin, 2000 .

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

J. Palmour, C. Carter, R. Davis, 1987 .

Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors

M. E. Levinshtein, M. Shur, A. Agarwal, 2013 .

Power GaN-based Microwave Devices for Wireless Communications

J. Palmour, U. Mishra, N. Zhang, 2001 .

4H-silicon carbide mesfet with 2.8 W/mm rf power density

J. Palmour, C. Weitzel, C. Carter, 1994, 52nd Annual Device Research Conference.

Performance and Reliability of AlGaN / GaN HEMT on 100mm SiC Substrate With Improved Epitaxial Growth Uniformity

J. Palmour, A. Burk, S. Sheppard, 2012 .

Ultra high voltage MOS controlled 4H-SiC power switching devices

C. W. Tipton, J. Casady, S. Ryu, 2015 .

On the thermal stability of high-voltage rectifier diodes

J. Palmour, M. Levinshtein, T. T. Mnatsakanov, 2006 .

Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

J. Palmour, C. Carter, R. Davis, 1985 .

High hole lifetime (3.8 /spl mu/s) in 4H-SiC diodes with 5.5 kV blocking voltage

J. Palmour, M. Levinshtein, O. Kordina, 1999 .

Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode

J. Palmour, M. Levinshtein, V. Yuferev, 2017 .

Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

B. Hull, M. Das, J. Palmour, 2008 .

The critical charge density in high voltage 4H-SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2003 .

Structure and chemistry of passivated SiC/SiO2 interfaces

B. Hull, J. Palmour, D. Lichtenwalner, 2016 .

High temperature 4H-silicon carbide thyristors and power MOSFETs

J. Palmour, S. Allen, L. Lipkin, 2008 .

1800 V, 3.8 A bipolar junction transistors in 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

Surface Characteristics of Monocrystalline ß-SiC dry etched in fluorinated gases

J. Palmour, R. Davis, P. Blackborow, 1986 .

Demonstrating the potential of 6h-silicon carbide for power devices

J. Palmour, C. Carter, J. Edmond, 1993, 51st Annual Device Research Conference.

Forward-current-generated donor centers in high-voltage 4H-SiC based p-i-n diodes

A. Agarwal, M. Das, J. Palmour, 2011 .

Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions

M. Shur, A. Agarwal, M. Das, 2011, 2011 21st International Conference on Noise and Fluctuations.

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

B. Hull, J. Palmour, E. van Brunt, 2018, Materials Science Forum.

High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

A. Agarwal, S. Ryu, J. Richmond, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

S. Ryu, A. Hefner, J. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

1.8 kV, 3.8 A bipolar junction transistors in 4H-SiC

M. E. Levinshtein, A. Agarwal, S. Ryu, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Specific features of switch-on processes in high-voltage (18 kV class) optically triggered 4H-SiC thyristors

M. E. Levinshtein, J. Palmour, T. T. Mnatsakanov, 2014 .

Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures

A. G. Tandoev, J. Palmour, M. Levinshtein, 2011 .

Fundamental physical limitations on the blocking voltage of SiC rectifier diodes

M. E. Levinshtein, J. Palmour, T. T. Mnatsakanov, 2009 .

Generation-recombination noise in forward biased 4H-SiC p-n diodes

M. Shur, D. Veksler, B. Hull, 2006 .

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

M. Das, J. Palmour, M. Levinshtein, 2005 .

Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

The critical charge concept for 4H-SiC-based thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2003 .

Parameters of Electron-Hole Scattering in Silicon Carbide

A. G. Tandoev, J. Palmour, M. Levinshtein, 2003 .

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

A. Agarwal, T. Chow, S. Ryu, 2005 .

SiC BJT Technology for Power Switching and RF Applications

A. Agarwal, T. Chow, S. Ryu, 2004 .

Simulation, characterization and design of epitaxial emitter NPN 4H-SiC BJTs for amplifier applications

R. Gutmann, A. Agarwal, P. Losee, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

SiC BJT's for High Power Switching and RF Applications

A. Agarwal, S. Ryu, J. Richmond, 2002 .

Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

M. Shur, A. Agarwal, S. Ryu, 2001 .

Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor

A. Huang, J. Palmour, C. Scozzie, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

SiC super GTO thyristor technology development: Present status and future perspective

Heather O'Brien, Aderinto Ogunniyi, C. Capell, 2011, 2011 IEEE Pulsed Power Conference.

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

H. O'Brien, C. Scozzie, C. Capell, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

An Update on High Voltage SiC Power Devices

A. Agarwal, J. Palmour, 2011 .

27 kV, 20 A 4H-SiC n-IGBTs

Lin Cheng, C. W. Tipton, John W. Palmour, 2015 .

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

A. Agarwal, J. Palmour, M. O'loughlin, 2013 .

950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2006 .

Reliability of High Voltage 4H-SiC MOSFET Devices

A. Agarwal, J. Scofield, S. Ryu, 2006 .

Progress in SiC Materials and Microwave Devices

J. Palmour, C. Carter, S. Allen, 1999 .

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

V. A. Krivutsa, B. Hull, M. Das, 2006 .

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

A. Agarwal, R. Callanan, J. Palmour, 2008 .

Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection

A. G. Tandoev, J. Palmour, M. Levinshtein, 2013, Semiconductors.

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

J. Palmour, M. O'loughlin, A. Burk, 2016 .

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

J. Palmour, M. O'loughlin, A. Burk, 2012 .

A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Alex Q. Huang, David E. Grider, Lin Cheng, 2014 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

J. Palmour, K. Irvine, W. Schaffer, 1994 .

Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide

J. Palmour, R. Davis, J. Edmond, 1992 .

6H–silicon carbide devices and applications

John W. Palmour, Hua-Shuang Kong, John A. Edmond, 1993 .

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

J. Palmour, C. Carter, R. Davis, 1988 .

Monocrystalline beta -SiC semiconductor thin films: epitaxial growth, doping, and FET device development

J. Palmour, J. Glass, H. Kong, 1988, 38th Electronics Components Conference 1988., Proceedings..

Temperature dependence of the current‐voltage characteristics of metal‐semiconductor field‐effect transistors in n‐type β‐SiC grown via chemical vapor deposition

Robert F. Davis, John W. Palmour, Jeffrey T. Glass, 1987 .

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

John W. Palmour, H. Lendenmann, Marek Skowronski, 2006 .

A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules

B. Hull, J. Richmond, M. Das, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

Allen R. Hefner, John W. Palmour, David W. Berning, 2002 .

Status and prospects for SiC power MOSFETs

M. Melloch, A. Agarwal, J. Cooper, 2002 .

Progress in SiC : from material growth to commercial device development

J. Palmour, C. Carter, S. Allen, 1999 .

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

Scott Allen, Akin Akturk, John W. Palmour, 2018, Materials Science Forum.

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

S. Ryu, B. Hull, J. Richmond, 2020 .

Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes

Michael E. Levinshtein, John W. Palmour, A. A. Lebedev, 2018 .

The charged particle response of silicon carbide semiconductor radiation detectors

John W. Palmour, Frank H. Ruddy, John G. Seidel, 2003 .

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

J. Palmour, A. Powell, S. Allen, 2003 .

SiC microwave power technologies

J. W. Palmour, R. C. Clarke, J. Palmour, 2002, Proc. IEEE.

Insulator investigation on SiC for improved reliability

J. W. Palmour, J. Palmour, L. Lipkin, 1999 .

N2O Processing Improves the 4H-SiC:SiO2 Interface

John W. Palmour, Mrinal K. Das, M. Das, 2002 .

Noise spectroscopy of local surface levels in semiconductors

J. Palmour, M. Levinshtein, S. Rumyantsev, 2000 .

4.5 kV 120A SICGT and Its PWM Three Phase Inverter Operation of 100kVA class

Y. Sugawara, S. Ogata, Y. Miyanagi, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT

Y. Sugawara, S. Ogata, K. Asano, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

12-19 kV 4H-SiC pin diodes with low power loss

Toshihiko Hayashi, Yoshitaka Sugawara, D. Takayama, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

4.5 kV novel high voltage high performance SiC-FET "SIAFET"

Yoshitaka Sugawara, D. Takayama, Ranbir Singh, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

Substrate and epitaxial issues for SiC power devices

Michael G. Spencer, John W. Palmour, J. Palmour, 2002 .

Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions

S. Ryu, J. Palmour, S. Bhattacharya, 2015, IEEE Journal of Emerging and Selected Topics in Power Electronics.

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

SiC MESFET hybrid amplifier with 30-W output power at 10 GHz

R. A. Sadler, Scott Allen, J. W. Palmour, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Anant K. Agarwal, John W. Palmour, Brett Hull, 2006 .

Improved oxidation procedures for reduced SiO2/SiC defects

John W. Palmour, J. Palmour, L. Lipkin, 1996 .

Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs

S. Ryu, B. Hull, J. Palmour, 2023, Materials Science Forum.

High temperature SiC trench gate p-IGBTs

Sei-Hyung Ryu, John W. Palmour, S. Ryu, 2003 .

Development of A 4H-SiC CMOS Inverter

Sei-Hyung Ryu, John W. Palmour, Brett Hull, 2006 .

SiC Power Devices – An Overview

A. Agarwal, S. Ryu, S. Krishnaswami, 2004 .

Reliability of Nitrided Oxides in N- and P-type 4H-SiC MOS Structures

A. Agarwal, S. Krishnaswami, M. Das, 2004 .

Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface

Michael R. Melloch, John W. Palmour, M. Melloch, 1996 .

Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface

Michael R. Melloch, John W. Palmour, M. Melloch, 1995 .

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

A. Agarwal, J. Palmour, M. O'loughlin, 2014, Journal of Electronic Materials.

2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications

Sei-Hyung Ryu, S. Krishnaswami, J. Richmond, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs

Anant K. Agarwal, John W. Palmour, Brett Hull, 2006 .

Methodology to qualify silicon carbide MOSFETs for single shot avalanche events

V. Pala, S. Allen, B. Hull, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Development of medium voltage SiC power technology for next generation power electronics

J. Casady, S. Ryu, J. Palmour, 2015, 2015 IEEE International Workshop on Integrated Power Packaging (IWIPP).

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz

J. Palmour, C. Weitzel, C. Carter, 1994, IEEE Electron Device Letters.

High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates

J. Milligan, J. Palmour, S. Allen, 2002, 60th DRC. Conference Digest Device Research Conference.

Wide bandgap semiconductor devices and MMICs for RF power applications

T.J. Smith, J. Palmour, J. Sumakeris, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates

John W. Palmour, Scott Allen, Zoltan Ring, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

SiC MESFET with output power of 50 watts CW at S-band

J. Palmour, J. Sumakeris, S. Allen, 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).

Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes

J. Palmour, S. Rumyantsev, A. Lebedev, 2017 .

Self-heating and loss of thermal stability under a single current surge pulse in high-voltage 4H-SiC rectifier diodes

B. Hull, M. Das, J. Palmour, 2008 .

Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes

B. Hull, M. Das, J. Palmour, 2007 .

SiC power device reliability

Gangyao Wang, Sei-Hyung Ryu, John W. Palmour, 2016, 2016 IEEE International Integrated Reliability Workshop (IIRW).

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

M. Shur, S. Dhar, A. Agarwal, 2012 .

Si-like low-frequency noise characteristics of 4H-SiC MOSFETs

M. Shur, S. Dhar, A. Agarwal, 2011 .

Demonstration of a 6H-SiC CMOS technology

Gregory M. Johnson, J. Palmour, L. Lipkin, 1996, 1996 54th Annual Device Research Conference Digest.

6H silicon carbide MOSFET modelling for high temperature analogue integrated circuits (25–500°C)

F. S. Shoucair, J. W. Palmour, J. Palmour, 1996 .

High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC

John W. Palmour, A. V. Suvorov, J. Palmour, 1995, 1995 53rd Annual Device Research Conference Digest.

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

J. Palmour, M. Levinshtein, S. Rumyantsev, 2018, Materials Science Forum.

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

J. Palmour, S. Rumyantsev, A. Lebedev, 2017 .

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

John W. Palmour, J. Palmour, A. Powell, 2002 .

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

Scott Allen, John W. Palmour, Daniel J. Lichtenwalner, 2016 .

High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Scott Allen, Lin Cheng, Anant K. Agarwal, 2015 .

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

S. Dhar, A. Agarwal, J. Palmour, 2014 .

4.5 kV 60A SICGT and its Half Bridge Inverter Operation of 20kVA Class

Y. Sugawara, S. Ogata, Y. Miyanagi, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

S. Allen, J. Palmour, C. Weitzel, 1997, IEEE Electron Device Letters.

Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz

J. Palmour, C. Weitzel, C. Carter, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films

J. Palmour, R. Davis, H. Kong, 1988 .

Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies

Simon Wood, Donald A. Gajewski, Jeff B. Barner, 2018, Microelectron. Reliab..

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Anant K. Agarwal, Aivars J. Lelis, John W. Palmour, 2010 .

Dry etching of β‐SiC in CF4 and CF4+O2 mixtures

J. Palmour, K. Bhasin, T. M. Wallett, 1986 .

Low-dose aluminum and boron implants in 4H and 6H silicon carbide

A. Agarwal, S. Ryu, J. Palmour, 2001 .

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

M. Das, J. Palmour, J. Sumakeris, 2004 .

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

M. Das, J. Palmour, J. Sumakeris, 2005 .

Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

Lin Cheng, Anant K. Agarwal, Sei-Hyung Ryu, 2012, Journal of Electronic Materials.

High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

B. Hull, J. Palmour, S. Allen, 2016, IEEE Transactions on Power Electronics.

Silicon carbide JFET radiation response

R. E. Oakley, J. Palmour, C. Carter, 1992 .

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

A. Agarwal, J. Palmour, M. O'loughlin, 2010 .

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

John W. Palmour, Marek Skowronski, Mrinal K. Das, 2004 .

High temperature operation of alpha-silicon carbide buried-gate junction field-effect transistors

John W. Palmour, Michael Shur, Steven C. Binari, 1991 .

Low frequency noise in 4H-SiC BJTs

Anant K. Agarwal, Michael E. Levinshtein, John W. Palmour, 2004, SPIE International Symposium on Fluctuations and Noise.

Parameters of electron–hole scattering in silicon carbide

A. G. Tandoev, J. Palmour, M. Levinshtein, 2003 .

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2000 .

A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications

M. Melloch, J. Cooper, J. Palmour, 1994, IEEE Electron Device Letters.

5.5 kV normally-off low RonS 4H-SiC SEJFET

Sei-Hyung Ryu, Y. Sugawara, D. Takayama, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with R diff, on of 26 mΩ·cm 2 at 25°C

A. Agarwal, A. Huang, S. Ryu, 2007, ISPSD 2007.

Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses

A. Agarwal, M. Das, J. Palmour, 2011 .

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

A. Agarwal, M. Das, J. Palmour, 2011 .

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

V. A. Krivutsa, B. Hull, M. Das, 2007 .

Carrier lifetime measurements in 10 kV 4H-SiC diodes

Pavel Ivanov, Michael E. Levinshtein, John W. Palmour, 2003 .

Carrier lifetime "paradoxes" in high-voltage 4H-SiC diodes

J. Palmour, M. Levinshtein, R. Singh, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC

J. Palmour, D. Lichtenwalner, C. Scozzie, 2014 .

An overview of Cree silicon carbide power devices

S. Krishnaswami, S.-H. Ryu, J. Richmond, 2004, Power Electronics in Transportation (IEEE Cat. No.04TH8756).

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2013 .

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Stephen B. Bayne, Lin Cheng, Argenis Bilbao, 2015, IEEE Transactions on Power Electronics.

Latest results on 1200 V 4H-SiC CIMOSFETs with R sp, on of 3.9 mΩ·cm 2 at 150°C

S. Ryu, B. Hull, J. Palmour, 2015, ISPSD 2015.

Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes

V. Pala, S. Allen, B. Hull, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

S. Ryu, B. Hull, J. Richmond, 2015 .

CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

S. Ryu, B. Hull, J. Palmour, 2015 .

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

John W. Palmour, Mrinal K. Das, Nelson S. Saks, 2002 .

Reliability studies of SiC vertical power MOSFETs

Scott Allen, Akin Akturk, John W. Palmour, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

B. Hull, J. Palmour, E. van Brunt, 2019, Materials Science Forum.

4H-SiC Trench Schottky Diodes for Next Generation Products

B. Hull, J. Palmour, S. Allen, 2013 .

Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

Pavel Ivanov, Anant K. Agarwal, Sei-Hyung Ryu, 2002 .

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes

B. Hull, J. Palmour, E. Brunt, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Epitaxial thin film growth and device development in monocrystalline alpha and beta silicon carbide

J. Palmour, R. Davis, J. Edmond, 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Epitaxial Growth, High Temperature Ion Implantation and MOSFET Fabrication in Monocrystalline β-SiC Thin Films

J. Palmour, R. Davis, J. Glass, 1989 .

Optical Switch-On of Silicon Carbide Thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

A. G. Tandoev, J. Palmour, M. Levinshtein, 2016 .

Transient injection and fast switch on in p‐i‐n diodes

A. G. Tandoev, J. Palmour, M. Levinshtein, 2006 .

Power MOSFETs in 4H-SiC: Device Design and Technology

S. Ryu, A. Agarwal, S. Ryu, 2004 .

3300 V, 30 A 4H-SiC power DMOSFETs

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Semiconductor Device Research Symposium.

10.3 m/spl Omega/-cm/sup 2/, 2 kV Power DMOSFETs in 4H-SiC

A. Agarwal, Sei-Hyung Ryu, J. Palmour, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

A. Agarwal, J. Richmond, J. Palmour, 2002, IEEE Electron Device Letters.

4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

J. Palmour, L. Lipkin, A. Suvorov, 2000 .

High Temperature, High Current, 4H-SiC Accu-DMOSFET

S. Ryu, J. Palmour, R. Singh, 2000 .

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base

A. G. Tandoev, S. Ryu, J. Palmour, 2016 .

A. G. Tandoev, J. Palmour, M. Levinshtein, 2005 .

5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2

Toshihiko Hayashi, Yoshitaka Sugawara, D. Takayama, 2002 .

Design of dual use, high efficiency, 4H-SiC Schottky and MPS diodes

J. W. Palmour, A. Agarwal, J. Palmour, 2000, Collection of Technical Papers. 35th Intersociety Energy Conversion Engineering Conference and Exhibit (IECEC) (Cat. No.00CH37022).

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2013 .

4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage

O. Kordina, J. Palmour, M. Levinshtein, 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).

Low frequency noise in 4H silicon carbide

J. Palmour, M. Levinshtein, S. Rumyantsev, 1997 .

LOW-FREQUENCY NOISE IN 4H-SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

J. Palmour, M. Levinshtein, G. Simin, 1996 .