P. Stolk

发表

Modeling statistical dopant fluctuations in MOS transistors

P. Stolk, F. Widdershoven, D. Klaassen, 1998 .

ENERGETICS OF SELF-INTERSTITIAL CLUSTERS IN SI

P. Stolk, A. Claverie, N. Cowern, 1999 .

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

T. E. Haynes, P. Stolk, J. Poate, 1997 .

Transient enhanced diffusion of Boron in Si

S. Decoutere, R. Lindsay, P. Stolk, 2002 .

The effect of statistical dopant fluctuations on MOS device performance

P. Stolk, D. Klaassen, 1996, International Electron Devices Meeting. Technical Digest.

Stress Memorization Technique (SMT) Optimization for 45nm CMOS

P. Stolk, F. Leverd, F. Arnaud, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

P. Stolk, F. Roozeboom, P. Woerlee, 2001 .

A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS

J. Kittl, A. Lauwers, R. Lindsay, 2003 .

Defects in amorphous silicon probed by subpicosecond photocarrier dynamics

P. Stolk, W. F. V. D. Weg, W. Sinke, 1992 .

Low temperature process flow optimisation for 65nm CMOS mixed-signal applications

B. Tavel, M. Bidaud, M. Denais, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Iron gettering mechanisms in silicon

T. E. Haynes, P. Stolk, J. Poate, 1996 .

The mechanisms of iron gettering in silicon by boron ion-implantation

T. E. Haynes, P. Stolk, J. Poate, 1995 .

Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469

P. Stolk, T. D. Rubia, C. Rafferty, 1997 .

Properties of Point-Defects in Si for Process Modeling

P. Stolk, J. Poate, H. Gossmann, 1995 .

Mobility Enhancement by Strained Nitride Liners for 65nm CMOS Logic Design Features

Pierre Morin, S. Orain, C. Ortolland, 2006 .

Annealing of ion-implanted hydrogenated amorphous silicon: Stable and removable damage

P. Stolk, W. F. V. D. Weg, F. Saris, 1993 .

Simultaneous Relaxation of Network and Defects in Silicon-Implanted a-Si:H *

S. Wagner, P. Stolk, J. Poate, 1995 .

The mechanism of iron gettering in boron‐doped silicon

T. E. Haynes, P. Stolk, J. Poate, 1996 .

Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H

P. Stolk, W. F. V. D. Weg, F. Saris, 1993 .

Ultra-shallow junction formation by outdiffusion from implanted oxide

P. Stolk, F. Roozeboom, J. Schmitz, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Gate-workfunction engineering using poly-(Si,Ge) for high-performance 0.18 /spl mu/m CMOS technology

C. Salm, Y.V. Ponomarev, J. Schmitz, 1997, International Electron Devices Meeting. IEDM Technical Digest.

High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates

Cora Salm, Jurriaan Schmitz, Pierre H. Woerlee, 2000 .

Formation of extended defects in silicon by high energy implantation of B and P

P. Stolk, J. Poate, D. Eaglesham, 1996 .

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

P. Stolk, P. Pichler, N. Cowern, 1997 .

Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon

G. Krötz, P. A. Stolk, W. F. van der Weg, 1994 .

Implant damage and transient enhanced diffusion in Si

T. E. Haynes, P. Stolk, J. Poate, 1995 .

Implantation and transient B diffusion in Si: The source of the interstitials

P. A. Stolk, D. J. Eaglesham, P. Stolk, 1994 .

Picosecond Photocarrier Lifetimes in Ion-Irradiated Amorphous and Crystalline Silicon

P. Stolk, F. Saris, S. Roorda, 1991 .

Transient enhanced diffusion of Sb and B due to MeV silicon implants

T. E. Haynes, P. Stolk, J. Poate, 1997 .

Explosive crystallization of amorphous silicon: triggering and propagation

P. Stolk, A. Polman, W. Sinke, 1989 .

Triggering explosive crystallization of amorphous silicon

P. Stolk, A. Polman, W. Sinke, 1991 .

Pulsed‐laser crystallization of amorphous silicon layers buried in a crystalline matrix

P. Stolk, A. Polman, W. Sinke, 1990 .

Epitaxial explosive crystallization of amorphous silicon

P. Stolk, A. Polman, W. Sinke, 1989 .

The interstitial fraction of diffusivity of common dopants in Si

T. E. Haynes, P. Stolk, J. Poate, 1997 .

Epitaxial Explosive Crystallization of Amorphous Silicon Layers Buried in a Silicon (100) and (111) Matrix

P. Stolk, A. Polman, W. Sinke, 1989 .

Freezing in Silicon at Large Undercooling

P. Stolk, A. Polman, W. Sinke, 1989 .

The effect of carbon on diffusion in silicon

P. Stolk, J. Poate, H. Gossmann, 1996 .

Device modeling of statistical dopant fluctuations in MOS transistors

D.B.M. Klaassen, P. Stolk, F. Widdershoven, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

Structural and electrical defects in amorphous silicon probed by positrons and electrons

P. Stolk, R. Hakvoort, F. Saris, 1992 .

Vacancy-type and electrical defects in amorphous silicon probed by positrons and electrons

P. Stolk, R. Hakvoort, F. Saris, 1991 .

Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion

P. A. Stolk, D. J. Eaglesham, P. Stolk, 1995 .

Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon

P. A. Stolk, D. J. Eaglesham, J. M. Poate, 1996 .

Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon

P. Stolk, J. Poate, H. Gossmann, 1994 .

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

Karen Maex, Wilfried Vandervorst, Jorge Kittl, 2004 .

Recovery kinetics of phosphorus ion-implanted a-Si:H

S. Wagner, P. Stolk, J. Poate, 1996 .

On the nanostructure of pure amorphous silicon

P. Stolk, F. Saris, S. Roorda, 1995 .

Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions

M. Jurczak, M. Kaiser, R. Lindsay, 2004 .

Fast metal diffusers in Si in the presence of Si self‐interstitial traps

P. Stolk, J. Poate, H. Gossmann, 1995 .

Implantation and transient boron diffusion: the role of the silicon self-interstitial

P. Stolk, J. Poate, H. Gossmann, 1995 .

TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON

P. Stolk, J. Poate, H. Gossmann, 1995 .

Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

Fred Roozeboom, Pierre H. Woerlee, Giovanni Mannino, 2001 .

Hydrogen solubility and network stability in amorphous silicon.

Williamson, P. Stolk, Stolk, 1996, Physical review. B, Condensed matter.

Channel profile engineering of 0.1 /spl mu/m-Si MOSFETs by through-the-gate implantation

P. Stolk, J. Schmitz, P. Woerlee, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Ion implantation and transient enhanced diffusion

M. Jaraiz, P. Stolk, J. Poate, 1995, Proceedings of International Electron Devices Meeting.

Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

A.H. Montree, J. Schmitz, P. Stolk, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Examination of the Si ( 111 ) SiO2 , Si ( 110 ) SiO2 , and Si ( 100 ) SiO2 Interfacial Properties Following Rapid Thermal Annealing

B. O’Sullivan, P. Hurley, P. Stolk, 2002 .