J. Su

发表

Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors

M. Kao, R. Hsu, W. Hsu, 1996 .

An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers

W. Hsu, J. Su, S. Lu, 1999 .

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

W. Hsu, J. Su, Yu-Shyan Lin, 2000 .

Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25AsInP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction

W. Hsu, J. Su, Wen-Chau Liu, 1995 .

Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

W. Hsu, J. Su, Wen-Chau Liu, 1995 .

A New In 0.53 Al 0.22 Ga 0.25 As/InP Heterojunction Bipolar Transistor Grown by LP-MOCVD

W. Hsu, J. Su, Wen-Chau Liu, 1994 .

An Improved In0.5Ga0.5P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique

W. Hsu, J. Su, Yu-Shyan Lin, 1997 .

Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers

W. Hsu, J. Su, J. Huang, 1998 .

A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor

W. Hsu, J. Su, Ching-Sung Lee, 2000 .

A novel InAlAs/InGaAs two-terminal real-space transfer diode

W. Hsu, J. Su, Y. Wu, 1996 .

Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions

W. Hsu, J. Su, Yu-Shyan Lin, 1997 .