N. Taoka

发表

Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs

O. Weber, T. Irisawa, T. Numata, 2007, 2007 IEEE International Electron Devices Meeting.

Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 International Electron Devices Meeting.

1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 International Electron Devices Meeting.

High mobility Ge pMOSFETs with ∼ 1nm thin EOT using Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal?Oxide?Semiconductor Field-Effect Transistors Using Ni?InGaAs Alloy

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2011 .

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

N. Taoka, M. Takenaka, S. Takagi, 2013, IEEE transactions on device and materials reliability.

Characterization of SiC-DPF for Passenger Car

N. Taoka, O. Salvat, Kazushige Ohno, 2000 .

High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain

K. Suzuki, S. Takagi, K. Ikeda, 2007, 2007 IEEE International Electron Devices Meeting.

High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Gate dielectric formation and MIS interface characterization on Ge

Shinichi Takagi, Hiroshi Kumagai, Tatsuro Maeda, 2007 .

Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013, IEEE Transactions on Electron Devices.

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

N. Taoka, T. Egawa, M. Shimizu, 2017 .

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2012 .

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

N. Taoka, M. Takenaka, S. Takagi, 2012, Materials.

Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

S. Takagi, M. Takenaka, T. Hoshii, 2011, 2011 International Electron Devices Meeting.

Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate

N. Taoka, O. Nakatsuka, S. Zaima, 2014 .

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Rui Zhang, S. Takagi, M. Takenaka, 2013, IEEE Transactions on Electron Devices.

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates

N. Taoka, S. Mochizuki, O. Nakatsuka, 2006 .

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

N. Taoka, H. Amano, M. Shimizu, 2021, Applied Physics Express.

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface

N. Taoka, M. Shimizu, T. Yayama, 2018, Scientific Reports.

Growth and applications of GeSn-related group-IV semiconductor materials

N. Taoka, M. Kurosawa, O. Nakatsuka, 2015 .

Formation and crystalline structure of Ni silicides on Si(110) substrate

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2014 .

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

G. Capellini, N. Taoka, P. Zaumseil, 2017 .

Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

G. Capellini, N. Taoka, P. Zaumseil, 2016 .

Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

G. Capellini, N. Taoka, P. Zaumseil, 2016 .

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

G. Capellini, N. Taoka, P. Zaumseil, 2015 .

Epitaxial growth and crystalline properties of Ge1−x−ySixSny on Ge(0 0 1) substrates

N. Taoka, M. Kurosawa, O. Nakatsuka, 2015 .

Formation, crystalline structure, and optical properties of Ge

N. Taoka, M. Kurosawa, O. Nakatsuka, 2015 .

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

N. Taoka, M. Kurosawa, O. Nakatsuka, 2015 .

Material Properties and Applications of Ge1-xSnx Alloys for Ge Nanoelectronics

N. Taoka, Y. Shimura, O. Nakatsuka, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal

N. Taoka, K. Makihara, M. Ikeda, 2021 .

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface

N. Taoka, M. Araidai, M. Kurosawa, 2019, Japanese Journal of Applied Physics.

Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures

N. Taoka, M. Shimizu, K. Makihara, 2019, Japanese Journal of Applied Physics.

Pure-edge dislocation network for strain-relaxed SiGe∕Si(001) systems

N. Taoka, O. Nakatsuka, A. Sakai, 2005 .

Dislocation Morphology and Crystalline Mosaicity in Strain-Relaxed SiGe Buffer Layers on SOI

Shigeaki Zaima, Osamu Nakatsuka, Masaki Ogawa, 2006 .

Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates

N. Taoka, N. Sugiyama, S. Takagi, 2005 .

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations

N. Taoka, Tomohiro Egawa, O. Nakatsuka, 2005 .

Control of Insulator/semiconductor Interfaces and Its Electrical Properties

N. Taoka, 2018, Vacuum and Surface Science.

Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts

N. Taoka, O. Nakatsuka, S. Zaima, 2014 .

Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor

N. Taoka, T. Egawa, M. Shimizu, 2017 .

Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation

N. Taoka, Y. Yamashita, N. Sugiyama, 2006 .

Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate

N. Taoka, O. Nakatsuka, S. Zaima, 2013 .

Broad defect depth distribution in germanium substrates induced by CF4 plasma

N. Taoka, O. Nakatsuka, S. Zaima, 2013 .

Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs

N. Taoka, M. Takenaka, S. Takagi, 2016 .

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy

N. Taoka, K. Makihara, M. Ikeda, 2020, Japanese Journal of Applied Physics.

Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction

T. Ohba, N. Taoka, Y. Mizushima, 2014 .

Impact of hydrogen surfactant on crystallinity of Ge1−xSnx epitaxial layers

N. Taoka, O. Nakatsuka, S. Zaima, 2015 .

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

N. Taoka, M. Takenaka, S. Takagi, 2012 .

High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

N. Taoka, M. Takenaka, S. Takagi, 2012, IEEE Transactions on Electron Devices.

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2015 .

AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

N. Taoka, M. Shimizu, K. Makihara, 2018 .

High thermal stability of abrupt SiO2/GaN interface with low interface state density

N. Taoka, M. Shimizu, K. Makihara, 2017 .

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment

N. Taoka, T. Doi, O. Nakatsuka, 2019, Japanese Journal of Applied Physics.

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

N. Taoka, M. Shimizu, K. Makihara, 2018 .

Effects of ambient conditions in thermal treatment for Ge(0 0 1) surfaces on Ge–MIS interface properties

N. Taoka, Y. Yamashita, N. Sugiyama, 2006, 2006 International SiGe Technology and Device Meeting.

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode

N. Taoka, M. Kurosawa, O. Nakatsuka, 2013 .

Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

M. Harada, N. Taoka, Y. Yamashita, 2009, IEEE Transactions on Electron Devices.

Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.

N. Taoka, M. Takenaka, S. Takagi, 2013, Optics express.

Fabrication of Ge-rich SiGe-On-insulator waveguide for optical modulator

N. Taoka, M. Takenaka, S. Takagi, 2011, IEEE Photonic Society 24th Annual Meeting.

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties

N. Taoka, M. Shimizu, K. Makihara, 2018 .

Effect of SiC-DPF with High Cell Density for Pressure Loss and Regeneration

N. Taoka, Hiroki Sato, Kazushige Ohno, 2001 .

Influence of Ge substrate orientation on crystalline structures of Ge1 − xSnx epitaxial layers

N. Taoka, M. Kurosawa, O. Nakatsuka, 2014 .

Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge

N. Taoka, S. Takagi, Y. Morita, 2010 .

Interfacial Control and Electrical Properties of Ge MOS structures

N. Taoka, M. Takenaka, S. Takagi, 2009 .

Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

Mitsuru Takenaka, Shinichi Takagi, Rui Zhang, 2011 .

Stabilized formation of tetragonal ZrO2 thin film with high permittivity

Shigeaki Zaima, Osamu Nakatsuka, Noriyuki Taoka, 2014 .

Robustness of Sn precipitation during thermal oxidation of Ge1−xSnx on Ge(001)

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2014 .

Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers

N. Taoka, S. Takagi, Y. Morita, 2010 .

Development of epitaxial growth technology for Ge1−xSnx alloy and study of its properties for Ge nanoelectronics

N. Taoka, Y. Shimura, O. Nakatsuka, 2013 .

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

N. Taoka, M. Kurosawa, O. Nakatsuka, 2015 .

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

N. Taoka, M. Kurosawa, M. Miyao, 2013 .

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates

N. Taoka, Tomohiro Egawa, O. Nakatsuka, 2004 .

Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

N. Taoka, T. Doi, M. Shimizu, 2020 .

Characterization of crystalline structures of SiGe substrate formed by traveling liquidus-zone method for devices with Ge/SiGe structures

N. Taoka, S. Yoda, O. Nakatsuka, 2014 .

Epitaxial growth and anisotropic strain relaxation of Ge1−xSnx layers on Ge(1 1 0) substrates

N. Taoka, Y. Shimura, O. Nakatsuka, 2013 .

Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

N. Taoka, S. Kimura, O. Nakatsuka, 2006 .

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer

N. Taoka, Tomohiro Egawa, O. Nakatsuka, 2004 .

Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots

N. Taoka, B. Tillack, M. Schubert, 2023, Nanomaterials.

Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2014 .

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Shinichi Takagi, Yoshimi Yamashita, Naoharu Sugiyama, 2008 .

Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (110) Si

N. Taoka, M. Takenaka, S. Takagi, 2013 .

Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering

S. Takagi, M. Takenaka, M. Yokoyama, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2014 .

InGaAs MOS Gate Stack Formation and the MOS Interface Properties

N. Taoka, M. Takenaka, S. Takagi, 2012 .

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation

N. Taoka, M. Takenaka, S. Takagi, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates

N. Taoka, M. Kurosawa, Y. Shimura, 2016 .

Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer

N. Taoka, M. Shimizu, Toshikazu Yamada, 2018, Japanese Journal of Applied Physics.

Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors

N. Taoka, M. Takenaka, S. Takagi, 2016 .

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013 .

SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition

N. Taoka, J. Suda, M. Horita, 2022, Japanese Journal of Applied Physics.

Formation and electrical properties of metal/Ge1−xSnx contacts

N. Taoka, M. Kurosawa, O. Nakatsuka, 2014, 2014 International Workshop on Junction Technology (IWJT).

Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

M. Harada, N. Taoka, Y. Yamashita, 2009 .

Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Growth and applications of GeSn-related group-IV semiconductor materials

N. Taoka, M. Kurosawa, O. Nakatsuka, 2015, 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

N. Taoka, T. Tezuka, Y. Imai, 2015 .

Formation and characterization of locally strained Ge1 − xSnx/Ge microstructures

N. Taoka, T. Tezuka, Y. Imai, 2014 .

Large grain growth of Ge-rich Ge1−xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

N. Taoka, H. Ikenoue, M. Kurosawa, 2014 .

(Invited) Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates

N. Taoka, M. Kurosawa, O. Nakatsuka, 2014 .

Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2014 .

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2013 .

Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

Mitsuru Takenaka, Shinichi Takagi, Rui Zhang, 2011 .

Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge

N. Taoka, O. Nakatsuka, S. Zaima, 2016 .

Photoluminescence of phosphorous doped Ge on Si (100)

G. Capellini, N. Taoka, B. Tillack, 2017 .

Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy

N. Taoka, O. Nakatsuka, K. Izunome, 2013 .

Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism

N. Taoka, M. Takenaka, S. Takagi, 2010, 2010 International Electron Devices Meeting.

Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-Oxide/Ge Gate Stack Structure

N. Taoka, O. Nakatsuka, M. Sakashita, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Defects Induced by Reactive Ion Etching in Ge Substrate

N. Taoka, O. Nakatsuka, S. Zaima, 2014 .

Formation of chemically stable GeO2 on the Ge surface with pulsed metal–organic chemical vapor deposition

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2015 .

Interfacial Reaction Mechanisms in Al2O3/Ge Structure by Oxygen Radical Process

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2013 .

Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2013 .

Formation of high-quality oxide/Ge1−xSnx interface with high surface Sn content by controlling Sn migration

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2014 .

Experimental Demonstration of n- and p-channel GaN-MOSFETs toward Power IC Applications

N. Taoka, M. Shimizu, H. Yamada, 2019, ECS Journal of Solid State Science and Technology.

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2013, IEEE Transactions on Nanotechnology.

Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents

N. Taoka, M. Nakamura, Y. Shimura, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers

N. Taoka, M. Kurosawa, O. Nakatsuka, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

Mitsuru Takenaka, Shinichi Takagi, Ryo Iida, 2011 .

Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

N. Taoka, M. Takenaka, M. Yokoyama, 2012, 2012 International Conference on Indium Phosphide and Related Materials.

Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films

N. Taoka, O. Nakatsuka, Kimihiko Kato, 2014 .

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

N. Taoka, M. Takenaka, S. Takagi, 2011, IEEE Electron Device Letters.

Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces

N. Taoka, T. Egawa, M. Shimizu, 2019, Semiconductor Science and Technology.

Accurate evaluation of Ge metal—insulator—semiconductor interface properties

Shinichi Takagi, Shinji Migita, Yukinori Morita, 2011 .

Formation of high-quality Ge1−xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1−xSnx/Ge interfaces

N. Taoka, O. Nakatsuka, S. Zaima, 2014 .

Analysis for positions of Sn atoms in epitaxial Ge1 − xSnx film in low temperature depositions

N. Taoka, O. Nakatsuka, K. Izunome, 2014 .

Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1−xSnx film grown at low temperature

N. Taoka, O. Nakatsuka, K. Izunome, 2014 .

Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

N. Taoka, M. Takenaka, S. Takagi, 2011 .