Y. Yamashita

发表

Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs

O. Weber, T. Irisawa, T. Numata, 2007, 2007 IEEE International Electron Devices Meeting.

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2001 .

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, T. Mimura, S. Hiyamizu, 2002, IEEE Electron Device Letters.

Nanogate InP-HEMT technology for ultrahigh-speed performance

Y. Yamashita, T. Mimura, S. Hiyamizu, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

547-GHz f/sub t/ In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As HEMTs with reduced source and drain resistance

I. Watanabe, T. Mimura, K. Shinohara, 2004, IEEE Electron Device Letters.

InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance

Y. Yamashita, T. Mimura, S. Hiyamizu, 2003 .

Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS-HEMTs

Y. Yamashita, T. Mimura, I. Watanabe, 2009 .

High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain

K. Suzuki, S. Takagi, K. Ikeda, 2007, 2007 IEEE International Electron Devices Meeting.

Ultra-High-Speed Low-Noise InP-HEMT Technology

Y. Yamashita, T. Mimura, S. Hiyamizu, 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

M. Higashiwaki, T. Mimura, K. Shinohara, 2001, IEEE Electron Device Letters.

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Gate dielectric formation and MIS interface characterization on Ge

Shinichi Takagi, Hiroshi Kumagai, Tatsuro Maeda, 2007 .

Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs

Y. Yamashita, T. Mimura, S. Hiyamizu, 2006 .

Effect of thermal annealing on 120‐nm-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors

Y. Yamashita, T. Mimura, S. Hiyamizu, 2005 .

120-nm-T-shaped-Mo∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors

Y. Yamashita, T. Mimura, S. Hiyamizu, 2005 .

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2004 .

Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors

Y. Yamashita, T. Mimura, S. Hiyamizu, 2002 .

Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs

Y. Yamashita, T. Mimura, I. Watanabe, 2011 .

Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation

N. Taoka, Y. Yamashita, N. Sugiyama, 2006 .

Effects of ambient conditions in thermal treatment for Ge(0 0 1) surfaces on Ge–MIS interface properties

N. Taoka, Y. Yamashita, N. Sugiyama, 2006, 2006 International SiGe Technology and Device Meeting.

Ion-Implanted B Concentration Profiles in Ge

Y. Yamashita, S. Takagi, Kunihiro Suzuki, 2007 .

Hot-wire CVD based SiN films for linear and nonlinear photonics device applications

Y. Yamashita, N. Sekine, A. Kasamatsu, 2018 .

Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

M. Harada, N. Taoka, Y. Yamashita, 2009, IEEE Transactions on Electron Devices.

Cryogenic characteristics of sub-100-nm-gate AlGaN/GaN MIS-HEMTs

Y. Yamashita, T. Mimura, I. Watanabe, 2008 .

Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators

Y. Yamashita, T. Mimura, S. Hiyamizu, 2006 .

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

T. Mimura, K. Shinohara, A. Endoh, 2001, IEEE Electron Device Letters.

50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

Y. Yamashita, T. Mimura, A. Endoh, 2002, IEEE Electron Device Letters.

Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications

Y. Yamashita, I. Watanabe, A. Kasamatsu, 2020, 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Shinichi Takagi, Yoshimi Yamashita, Naoharu Sugiyama, 2008 .

Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

M. Harada, N. Taoka, Y. Yamashita, 2009 .

AIGaN/GaN MIS-HEMTs with f/sub T/ of 194 GHz at 16 K

Issei Watanabe, Toshiaki Matsui, Yoshimi Yamashita, 2008 .

High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate

I. Watanabe, T. Mimura, K. Shinohara, 2005, IEEE Electron Device Letters.

High f/sub T/ 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

Y. Yamashita, T. Mimura, S. Hiyamizu, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure

Y. Yamashita, K. Ikeda, M. Miyao, 2006 .

High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates

Y. Yamashita, T. Mimura, S. Hiyamizu, 2000 .

InP HEMTs: physics, applications, and future

Y. Yamashita, T. Mimura, S. Hiyamizu, 2003, 61st Device Research Conference. Conference Digest (Cat. No.03TH8663).

Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Fabrication technology and device performance of sub-50-nm-gate InP-based HEMTs

M. Higashiwaki, Toshiaki Matsui, Akira Endoh, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

Y. Yamashita, T. Mimura, S. Hiyamizu, 2000 .

Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor

Y. Yamashita, T. Mimura, S. Hiyamizu, 2007 .

Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates

Y. Yamashita, T. Mimura, S. Hiyamizu, 2006, IEEE Transactions on Electron Devices.

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2001 .

Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (4 1 1)A-oriented substrates by MBE

Y. Yamashita, T. Mimura, S. Hiyamizu, 2007 .