M. Holland

发表

Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin

J. Wilson, M. Mackenzie, S. MacFadzean, 2006 .

InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

Y. Yeo, A. Afzalian, M. Holland, 2016, 2016 IEEE Symposium on VLSI Technology.

Field-Effect Mobility of InAs Surface Channel nMOSFET With Low $D_{\rm it}$ Scaled Gate-Stack

Y. Yeo, M. Holland, I. Thayne, 2015, IEEE Transactions on Electron Devices.

Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

A. Asenov, M. Holland, P. McIntyre, 2011, IEEE Electron Device Letters.

Fully self-aligned process for fabricating 100nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors

M. Holland, I. Thayne, S. Thoms, 2009 .

InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

B. Duriez, I. Thayne, M. Passlack, 2013, 2013 IEEE International Electron Devices Meeting.

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2.

M. Holland, I. Thayne, A. Kummel, 2012, The Journal of chemical physics.

Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors

M. Holland, I. Thayne, S. Thoms, 2010 .

Basic of Pseudomorphic Hemts Technology and Numerical Simulation

A. Asenov, M. Holland, S. Babiker, 1996 .

50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz

K. Elgaid, M. Holland, I. Thayne, 2005, IEEE Electron Device Letters.

Semiconductor quantum point contact fabricated by lithography with an atomic force microscope

Martin Holland, Klaus Ensslin, Thomas Heinzel, 1997 .

Demonstration of scaled Ge p-channel FinFETs integrated on Si

T. Lee, M. Holland, C. Wann, 2012, 2012 International Electron Devices Meeting.

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Yee-Chia Yeo, Aryan Afzalian, Gerben Doornbos, 2017, Scientific Reports.

High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates

Y. Yeo, A. Afzalian, M. Holland, 2016, IEEE Journal of the Electron Devices Society.

A simple model for the characteristics of GaAs/AlGaAs modulation-doped devices

M. Holland, A. R. Long, J. H. Davies, 1993 .

Nanolithography with an atomic force microscope for integrated fabrication of quantum electronic devices

Martin Holland, S. Kühn, M. Holland, 1994 .

94 and 150 GHz coplanar waveguide MMIC amplifiers realized using InP technology

M.R.S. Taylor, S. Ferguson, D.L. Edgar, 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

150GHz Coplanar Waveguide MMIC Amplifier

M. Holland, I. Thayne, S. Ferguson, 1999, 1999 29th European Microwave Conference.

Spectroscopy of field-effect-induced superlattices

G. Tränkle, M. Holland, G. Böhm, 1994 .

Quantitative analysis of elastic strains in GaAs/AlAs quantum dots

M. Holland, P. Wang, G. Bauer, 1996 .

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

A. Afzalian, M. Holland, L. Wernersson, 2019, Scientific Reports.

AlxIn1−xAsySb1−y alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy

M. Holland, M. Passlack, R. Droopad, 2015 .

Internal structure of a Landau band induced by a lateral superlattice: a glimpse of Hofstadter's butterfly

M. Holland, K. Ensslin, J. Kotthaus, 1996 .

GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

M. Holland, C. Stanley, I. Thayne, 2007 .

Crystalline and Quasi-crystalline Patterns in X-Ray Diffraction from Periodic Arrays of Quantum Dots

M. Holland, P. Wang, V. Holý, 1995 .

Spectroscopy of quantum dots in the few electron limit

J. G. Williamson, M. Rahman, M. Holland, 1996 .

Magneto transport on antidot arrays, fabricated by an atomic force microscope

M. Holland, J. Kotthaus, H. Lorenz, 1996 .

Individual scatterers as microscopic origin of equilibration between spin- polarized edge channels in the quantum Hall regime

Y. Acremann, M. Holland, K. Ensslin, 2000 .

Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1

J. M. Chamberlain, M. Holland, C. Stanley, 1991 .

4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2

J. M. Chamberlain, M. Holland, C. Stanley, 1991 .

Peak electron mobilities between 2.75 and 3.32×105 cm2 V−1 s−1 in GaAs grown by molecular beam epitaxy with As2

M. Holland, C. Stanley, A. Kean, 1990 .

Fermi-edge singularities in a one-dimensional electron system in magnetic field

M. Hopkinson, M. Holland, C. Stanley, 2001 .

Strain-induced quantum confinement of electron gases: The observation of quantum dot levels

M. Hopkinson, M. Holland, C. Stanley, 1998 .

Ge n-channel FinFET with optimized gate stack and contacts

A. Afzalian, M. Holland, Y. See, 2014, 2014 IEEE International Electron Devices Meeting.

Strain-induced quantum confinement of electron gases

M. Hopkinson, M. Holland, C. Stanley, 1998 .

Magneto-optics of zero-dimensional electron systems

M. Hopkinson, M. Holland, C. Stanley, 1997 .

The Hanbury Brown and Twiss experiment with fermions

M. Holland, K. Ensslin, C. Strunk, 2000, cond-mat/0102154.

Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Sonia H. Paluchowski Caldwell, D. Cumming, M. Holland, 2011 .

Silicon compensation and scattering mechanisms in two-dimensional electron gases on (110)GaAs

M. Holland, C. Stanley, A. Kean, 1995 .

Photoluminescence intensity and multiple phonon Raman scattering in quantum dots: evidence of the bottleneck effect

M. Holland, C. Stanley, S. Thoms, 1994 .

An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices

M. Holland, I. Thayne, G. Paterson, 2010 .

A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

M. Holland, I. Thayne, G. Paterson, 2009 .

Deep sub-micron and self-aligned flatband III–V MOSFETs

A. Asenov, X. Li, M. Holland, 2009, 2009 Device Research Conference.

Landau subbands generated by a lateral electrostatic superlattice - chasing the Hofstadter butterfly

M. Holland, K. Ensslin, J. Kotthaus, 1996 .

Interaction of Phonons with the 2-DEG in a MODFET

C. Wilkinson, M. Holland, C. Stanley, 1993 .

Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs

A. Afzalian, M. Holland, G. Vellianitis, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures

M. Holland, C. Stanley, J. Chapman, 1991 .

Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor.

M. Holland, C. Santori, C. Stanley, 2005, Physical review letters.

Fabrication and Simulation of 0.1 μm Pseudomorphic HEMTs

A. Asenov, M. Holland, N. Cameron, 1995 .

Selectively dry gate recessed GaAs metal–semiconductor field‐effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits

M. Holland, P. Ladbrooke, S. Ferguson, 1993 .

A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III–V Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8

M. Holland, I. Thayne, Xu Li, 2012 .

A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use

K. Elgaid, M. Holland, H. McLelland, 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

Comparison of 80 nm-200 nm gate length Al/sub 0.25/GaAs/GaAs/Al/sub 0.25/GaAs, Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs

M. Holland, I. Thayne, S. Beaumont, 1993, Proceedings of IEEE International Electron Devices Meeting.

30nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors

C. Wilkinson, M. Holland, I. Thayne, 2006 .

Tunneling measurements of the Coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field

M. Holland, W. Hansen, V. Dolgopolov, 1999, cond-mat/9909011.

Defect Penetration During the Plasma Etching of Semiconductors

M. Rahman, C. Wilkinson, M. Holland, 1992 .

Optical detection of charge redistribution in a δ modulation-doped GaAs–AlxGa1−xAs heterojunction

M. Holland, C. Stanley, M. Hayne, 1998 .

Model for conductance in dry‐etch damaged n‐GaAs structures

M. Rahman, C. Wilkinson, M. Holland, 1992 .

Ultrafast control of donor-bound electron spins with single detuned optical pulses

M. Holland, C. Santori, C. Stanley, 2008, 0806.4137.

Inelastic light scattering from electronic excitations in deep-etched quantum dots and wires

D. J. Lockwood, M. Holland, P. Wang, 1996 .

Optical emission and Raman scattering in modulation-doped gaAs-AlGaAs quantum wires and dots

D. J. Lockwood, M. Holland, P. Christianen, 1994 .

Interplay of Landau band width and band separation in a square lateral superlattice

M. Holland, K. Ensslin, J. Kotthaus, 1996 .

Fabrication and Luminescence of Etched Quantum Rings and Vertically Coupled Dots

M. Holland, P. Wang, C. Cassou, 1995 .

The effect of optically-induced random anisotropic disorder on a two-dimensional electron system

S. Simon, M. Holland, C. Stanley, 2006 .

Far‐infrared photocurrent of quantum wires

M. Holland, S. Beaumont, J. Kotthaus, 1994 .

Widely tuneable quantum wire arrays in MISFET-type heterojunctions with a stacked gate

M. Holland, S. Beaumont, J. Kotthaus, 1994 .

Quantum wires with a widely tunable confining potential

M. Holland, S. Beaumont, S. Manus, 1994 .

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Y. Yeo, A. Afzalian, M. Holland, 2017, Scientific Reports.

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition.

M. Holland, A. Kummel, R. Droopad, 2010, The Journal of chemical physics.

Selective reactive ion etching of GaAs/AlGaAs metal‐semiconductor field effect transistors

S. P. Beaumont, Iain G. Thayne, Martin Holland, 1991 .

Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures

J. G. Williamson, M. Rahman, M. Holland, 1995 .

A Planar Gunn Diode Operating Above 100 GHz

A. Khalid, D. Cumming, M. Holland, 2007, IEEE Electron Device Letters.

Planar Gunn-type triode oscillator at 83 GHz

D. Cumming, M. Holland, C. Stanley, 2007 .

Novel composite contact design and fabrication for planar Gunn devices for millimeter‐wave and terahertz frequencies

D. Cumming, M. Holland, G. Dunn, 2011 .

Electron transport in shallow heterostructures with AlGaAs and AlAs barriers

M. Holland, A. R. Long, E. Skuras, 1995 .

Potential modulation by strain in lateral surface superlattices

M. Holland, A. R. Long, R. Cuscó, 1999 .

In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Werner Wegscheider, Martin Holland, Klaus Ensslin, 1998 .

Growth of (Al,Ga)As structures on (110)-GaAs by MBE

M. Holland, C. Stanley, A. Kean, 1993 .

Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering

J. Marsh, M. Holland, J.H. Marsh, 1992, IEEE Photonics Technology Letters.

A mesoscopic ballistic electron mixer with efficient frequency conversion at radio frequency

D. Cumming, M. Holland, S. Beaumont, 1996 .

Anisotropic piezoelectric effect in lateral surface superlattices

M. Holland, A. R. Long, I. Larkin, 1997 .

Optically induced frequency dependent loss in AGE and ASI

M. Holland, A. R. Long, 1985 .

Direct Measurements of the Spin Gap in the Two-Dimensional Electron Gas of AlGaAs-GaAs Heterojunctions

M. Holland, J. Kotthaus, W. Hansen, 1997 .

Pinned and chaotic electron trajectories in an antidot lattice

M. Holland, K. Ensslin, S. Beaumont, 1992 .

Optimization of layer structure for InGaAs channel pseudomorphic HEMTs

A. Asenov, M. Holland, C. Stanley, 1999 .

Growth of heterostructures on InAs for high mobility device applications

M. Holland, K. Bhuwalka, G. Vellianitis, 2013 .

Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers

B. Duriez, M. Passlack, C. H. Diaz, 2013, 2013 IEEE International Electron Devices Meeting.

Anharmonic periodic modulation in lateral surface superlattices

M. Holland, A. R. Long, R. Cuscó, 1994 .

CHARGE DEPLETION OF N+-IN0.53GA0.47AS POTENTIAL WELLS BY BACKGROUND ACCEPTOR DOPING

M. Holland, C. Stanley, A. R. Long, 1999 .

1.2 K Shubnikov–de Haas measurements and self‐consistent calculation of silicon spreading in δ‐ and slab‐doped In0.53Ga0.47As grown by molecular beam epitaxy

M. Holland, C. Stanley, A. R. Long, 1996 .

Deep Levels Induced by SiCI 4 Reactive Ion Etching in GaAs

C. Wilkinson, M. Holland, S. Murad, 1993 .

Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

M. Holland, C. Stanley, I. Thayne, 2007 .

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

M. Holland, P. McIntyre, I. Thayne, 2011 .

Structural investigations of GaAs/AlAs quantum wires and quantum dots by X-ray reciprocal space mapping

M. Holland, P. Wang, G. Bauer, 1995 .

Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta‐doping layers

David R. S. Cumming, Ata Khalid, Martin Holland, 2011 .

Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack

M. Holland, I. Thayne, S. Thoms, 2003 .

50nm Metamorphic GaAs and InP HEMTs

Iain G. Thayne, David A. J. Moran, E. Boyd, 2007 .

Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f/sub T/ of 440 GHz for millimeterwave imaging receivers applications

K. Elgaid, M. Holland, D. Moran, 2005, International Conference on Indium Phosphide and Related Materials.

50 nm GaAs mHEMTs AND MMICs FOR ULTRA-LOW POWER DISTRIBUTED SENSOR NETWORK APPLICATIONS

K. Elgaid, M. Holland, I. Thayne, 2000 .

An Ultra-Low-Power MMIC Amplifier Using 50-nm $\delta$ -Doped $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Metamorphic HEMT

L.B. Lok, Chi-Jeon Hwang, Khaled Elgaid, 2010, IEEE Electron Device Letters.

DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

Iain G. Thayne, Khaled Elgaid, Martin Holland, 2009 .

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

A. Afzalian, M. Holland, L. Wernersson, 2019, Scientific Reports.

Core-Shell TFET Developments and TFET Limitations

A. Afzalian, M. Holland, L. Wernersson, 2019, 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

W. Hsu, M. Holland, C. Hsieh, 2014 .

InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

W. Hsu, M. Holland, E. Lind, 2013 .

InAs FinFETs With $\textrm {H}_{\mathrm {fin}}=20$ nm Fabricated Using a Top–Down Etch Process

Y. Yeo, X. Li, M. Holland, 2016, IEEE Electron Device Letters.

Comparative Study of High-$k/{\rm GaSb}$ Interfaces for Use in Antimonide Based MOSFETs

M. Holland, K. Bhuwalka, M. Passlack, 2014, IEEE Electron Device Letters.

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

M. Holland, P. McIntyre, I. Thayne, 2012 .

Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As

M. Holland, I. Thayne, G. Paterson, 2012 .

Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics

M. Holland, I. Thayne, S. Bentley, 2011 .

Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond

M. Holland, I. Thayne, S. Bentley, 2011 .

Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses

M. Holland, I. Thayne, G. Paterson, 2011 .

Improvements in strain‐balanced InGaAs/GaAs optical modulators for 1047‐nm operation

Andrew C. Walker, C. R. Stanley, Martin Holland, 1994 .