C. Stanley

发表

Electron transport anisotropies in pseudomorphic InGaAs channel materials and their structural origin

J. Wilson, M. Mackenzie, S. MacFadzean, 2006 .

Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells

C. D. Farmer, C. Stanley, A. Luque, 2015 .

Two-photon photocurrent and voltage up-conversion in a quantum dot intermediate band solar cell

C. Stanley, M. Steer, A. Luque, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Extreme voltage recovery in GaAs:Ti intermediate band solar cells

C. Stanley, C. Foxon, D. F. Marrón, 2013 .

Understanding intermediate-band solar cells

Antonio Luque, Antonio Martí, C. R. Stanley, 2012, Nature Photonics.

Application of photoreflectance to advanced multilayer structures for photovoltaics

I. Rey‐Stolle, C. Stanley, M. Steer, 2012, 1212.0680.

InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

C. R. Stanley, A. Luque, E. Lopez, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Voltage recovery in intermediate band solar cells

C. D. Farmer, C. Stanley, A. Luque, 2012 .

Application of photoluminescence and electroluminescence techniques to the characterization of intermediate band solar cells

C. D. Farmer, C. Stanley, A. Luque, 2011 .

Multiple levels in intermediate band solar cells

C. D. Farmer, C. Stanley, A. Luque, 2010 .

Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells

C. D. Farmer, C. Stanley, A. Sánchez, 2010 .

Advances in quantum dot intermediate band solar cells

C. D. Farmer, C. Stanley, A. Luque, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

Antonio Luque, Antonio Martí, Sergio I. Molina, 2010 .

Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs

C. Stanley, S. Chakrabarti, N. Halder, 2009 .

Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell

Antonio Luque, Antonio Martí, C. R. Stanley, 2008 .

Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells

C. D. Farmer, C. Stanley, A. Luque, 2008 .

Elements of the design and analysis of quantum-dot intermediate band solar cells

Antonio Luque, Antonio Martí, C. R. Stanley, 2008 .

Experimental Analysis of the Operation of Quantum Dot Intermediate Band Solar Cells

C. D. Farmer, C. Stanley, A. Luque, 2007 .

Emitter degradation in quantum dot intermediate band solar cells

C. D. Farmer, C. Stanley, A. Luque, 2007 .

Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band

C. D. Farmer, C. Stanley, A. Luque, 2006 .

Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells

Antonio Luque, Antonio Martí, C. R. Stanley, 2005 .

FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum

I. Luque-Heredia, Carlos Algora, Andreas Gombert, 2005 .

General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence

C. Stanley, A. Luque, A. Martí, 2004 .

Progress towards the practical implementation of the intermediate band solar cell

C. Stanley, A. Luque, C. Tablero, 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..

Growth and Fabrication of In(Al,Ga)As-GaAs Modulator/Detector Arrays for Smart Pixel Applications

C. Stanley, G. Pennelli, J. L. Pearson, 1999 .

Optoelectronic Systems Based on InGaAs- Complementary-Metal-Oxide-Semiconductor Smart-Pixel Arrays and Free-Space Optical Interconnects.

G S Buller, D T Neilson, M R Taghizadeh, 1998, Applied optics.

Efficient semiconductor ring lasers made by a simple self-aligned fabrication process

Thomas F. Krauss, C. R. Stanley, B. Vogele, 1995 .

Carbon dioxide lasers — An introduction to their characteristics and design

C. Stanley, 1971 .

GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

M. Holland, C. Stanley, I. Thayne, 2007 .

True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

Andrew C. Walker, C. R. Stanley, D. J. Goodwill, 1992 .

General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence

C. Stanley, A. Luque, A. Martí, 2004 .

Waisted-rib optical waveguides in GaAs

C. Wilkinson, C. Stanley, D. N. MacFadyen, 1980 .

Application of photoreflectance to advanced multilayer structures for photovoltaics

I. Rey‐Stolle, C. Stanley, M. Steer, 2012, 1212.0680.

Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1

J. M. Chamberlain, M. Holland, C. Stanley, 1991 .

4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2

J. M. Chamberlain, M. Holland, C. Stanley, 1991 .

Peak electron mobilities between 2.75 and 3.32×105 cm2 V−1 s−1 in GaAs grown by molecular beam epitaxy with As2

M. Holland, C. Stanley, A. Kean, 1990 .

An optically detected cyclotron resonance study of bulk GaAs

C. Stanley, R. Nicholas, R. Warburton, 1994 .

Comments on the origin of low-energy structure observed in the far-infrared cyclotron resonance of ultra-high mobility n-GaAs and n-InP

J. M. Chamberlain, C. Stanley, C. Langerak, 1992 .

Heat blocking gallium arsenide solar cells

C. D. Farmer, C. Stanley, G. Pfaff, 2007 .

Digest of IEEE/LEOS Summer Topical Meeting on Smart Pixels

Jason Hong, David G. Vass, Ian Underwood, 1994 .

Quantum transport measurements on Si δ- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy

C. Stanley, A. R. Long, M. Mcelhinney, 1995 .

Effect of arsenic dimer/tetramer ratio on stability of III–V compound surfaces grown by molecular beam epitaxy

C. Stanley, C. Wood, G. Wicks, 1983 .

Fermi-edge singularities in a one-dimensional electron system in magnetic field

M. Hopkinson, M. Holland, C. Stanley, 2001 .

Strain-induced quantum confinement of electron gases: The observation of quantum dot levels

M. Hopkinson, M. Holland, C. Stanley, 1998 .

Strain-induced quantum confinement of electron gases

M. Hopkinson, M. Holland, C. Stanley, 1998 .

Magneto-optics of zero-dimensional electron systems

M. Hopkinson, M. Holland, C. Stanley, 1997 .

Silicon compensation and scattering mechanisms in two-dimensional electron gases on (110)GaAs

M. Holland, C. Stanley, A. Kean, 1995 .

Photoluminescence intensity and multiple phonon Raman scattering in quantum dots: evidence of the bottleneck effect

M. Holland, C. Stanley, S. Thoms, 1994 .

An investigation of magnesium in indium phosphide grown by molecular-beam epitaxy

C. Stanley, T. Cheng, V. Airaksinen, 1988 .

Deep sub-micron and self-aligned flatband III–V MOSFETs

A. Asenov, X. Li, M. Holland, 2009, 2009 Device Research Conference.

Emission and absorption of phonons by the two-dimensional electron gas in a GaAs MODFET structure

C. Wilkinson, C. Stanley, J. H. Davies, 1991 .

Acoustic Phonon Pulse Studies of a Gated 2 DEG Microstructure

C. Wilkinson, C. Stanley, J. H. Davies, 1993 .

Interaction of Phonons with the 2-DEG in a MODFET

C. Wilkinson, M. Holland, C. Stanley, 1993 .

Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy

C. Stanley, T. Martin, C. Whitehouse, 1985 .

Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures

M. Holland, C. Stanley, J. Chapman, 1991 .

Reduced indium incorporation during the MBE growth of In(Al,Ga)As

C. Stanley, M. Mcelhinney, 1993 .

Measurement of aluminum concentration in epitaxial layers of AlxGa1−xAs on GaAs by double axis x‐ray diffractometry

C. Stanley, B. Tanner, A. Turnbull, 1991 .

Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell.

C. D. Farmer, C. Stanley, A. Luque, 2006, Physical review letters.

A method for the determination of collision-induced vibrational transition probabilities, with results for N2(B3Πg)—N2 collisions

C. Stanley, 1957, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

A New Method for the Production of Active Nitrogen and its Application to the Study of Collision Effects in the Nitrogen Molecular Spectrum

C. Stanley, 1954 .

Energy loss of hot electrons in double barrier resonant tunnelling structures

C. Wilkinson, C. Stanley, A. Kozorezov, 1999 .

Optical detection of charge redistribution in a δ modulation-doped GaAs–AlxGa1−xAs heterojunction

M. Holland, C. Stanley, M. Hayne, 1998 .

Luminescence studies from wires of varying aspect ratio in GaAs/GaAlAs quantum wells

P. Demeester, C. Stanley, S. Thoms, 1992 .

Waveguide microcavity based on photonic microstructures

B. Vogele, T. Krauss, C. Stanley, 1997, IEEE Photonics Technology Letters.

Strain enhancement during annealing of GaAsN alloys

C. Stanley, A. Krier, Q. Zhuang, 2007 .

Far-infrared optically detected cyclotron resonance in GaAs layers and low-dimensional structures

C. Stanley, C. Pidgeon, I. Agool, 1992 .

Far-infrared optically detected cyclotron resonance observation of quantum effects in GaAs

G. R. Johnson, C. Stanley, C. Pidgeon, 1990 .

The effect of optically-induced random anisotropic disorder on a two-dimensional electron system

S. Simon, M. Holland, C. Stanley, 2006 .

The low-temperature conductivity of etched quantum wires

C. Wilkinson, C. Stanley, A. R. Long, 1993 .

Characterisation of a deep electron trap in molecular-beam epitaxial InP

C. Stanley, R. Park, 1981 .

Planar Gunn-type triode oscillator at 83 GHz

D. Cumming, M. Holland, C. Stanley, 2007 .

Growth of (Al,Ga)As structures on (110)-GaAs by MBE

M. Holland, C. Stanley, A. Kean, 1993 .

IBPOWER: Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost

C. D. Farmer, C. Stanley, B. Marsen, 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

Progress towards photonic crystal quantum cascade laser

C. R. Stanley, C. D. Farmer, Charles N. Ironside, 2004 .

Design and construction of an optoelectronic crossbar switch containing a terabit per second free-space optical interconnect

P. Benabes, Mohammad R. Taghizadeh, Gerald S. Buller, 1999 .

Raman Scattering and Photoluminescence of GaAs-Based Nanostructures

C. Stanley, S. Thoms, S. Beaumont, 1990 .

Understanding the operation of quantum dot intermediate band solar cells

C. D. Farmer, C. Stanley, A. Luque, 2012 .

Improved GaAs-based quantum cascade laser (lambda similar to 11 mu m) using high-reflectivity metal facet coating

C. D. Farmer, Charles N. Ironside, C. Stanley, 2002 .

Optimization of layer structure for InGaAs channel pseudomorphic HEMTs

A. Asenov, M. Holland, C. Stanley, 1999 .

Modified AlAs epitaxial layers for use as pattern transfer masks

T. Krauss, C. Wilkinson, C. Stanley, 1999 .

CHARGE DEPLETION OF N+-IN0.53GA0.47AS POTENTIAL WELLS BY BACKGROUND ACCEPTOR DOPING

M. Holland, C. Stanley, A. R. Long, 1999 .

An investigation of CH4/H2 reactive ion etching damage to thin heavily doped GaAs metal–semiconductor field effect transistor layers during gate recessing

C. Wilkinson, C. Stanley, N. Cameron, 1990 .

Shubnikov–de Haas effect and persistent photoconductivity in In0.52Al0.48As

C. Stanley, A. R. Long, M. V. D. Burgt, 1999 .

1.2 K Shubnikov–de Haas measurements and self‐consistent calculation of silicon spreading in δ‐ and slab‐doped In0.53Ga0.47As grown by molecular beam epitaxy

M. Holland, C. Stanley, A. R. Long, 1996 .

Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

C. Stanley, J. Hernández-Saz, M. Herrera, 2016 .

Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

M. Holland, C. Stanley, I. Thayne, 2007 .

Very high-transconductance short-channel GaAs MESFETs with Ga0.3Al0.7As buffer layer

C. Wilkinson, C. Stanley, S. Beaumont, 1987 .

Quantum cascade laser gain medium modeling using a second-nearest-neighbor sp3s∗ tight-binding model

T. Boykin, Gerhard Klimeck, C. Stanley, 2005 .

using a second-nearest neighbor sp s tight-binding

Gerhard Klimeck, Jeremy Green, Charles N. Ironside, 2003 .

Quasi phase matching in GaAs--AlAs superlattice waveguides through bandgap tuning by use of quantum-well intermixing.

A. C. Bryce, J. Aitchison, J. Marsh, 2000, Optics letters.

Improvements in strain‐balanced InGaAs/GaAs optical modulators for 1047‐nm operation

Andrew C. Walker, C. R. Stanley, Martin Holland, 1994 .