T. Krishnamohan

发表

Development of high-k dielectric for antimonides and a sub 350°C III–V pMOSFET outperforming Germanium

J. B. Boos, K. Saraswat, Y. Nishi, 2010, 2010 International Electron Devices Meeting.

Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

K. Saraswat, T. Krishnamohan, Donghyun Kim, 2008, 2008 IEEE International Electron Devices Meeting.

High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs

C. O. Chui, K. Saraswat, T. Krishnamohan, 2006, 2006 International Electron Devices Meeting.

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

K. Saraswat, Y. Nishi, T. Krishnamohan, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Experimental demonstration of high mobility Ge NMOS

K. Saraswat, H. Wong, A. Nainani, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

S. Selberherr, K. Saraswat, Y. Nishi, 2006, 2006 International Electron Devices Meeting.

Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)

K. Saraswat, Y. Nishi, T. Krishnamohan, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

K. Saraswat, C. Jungemann, B. Meinerzhagen, 2008, 2008 IEEE International Electron Devices Meeting.

Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility

K. Saraswat, Yun Sun, T. Krishnamohan, 2007, 2007 IEEE International Electron Devices Meeting.

Ge (100) and (111) N- and P-FETs With High Mobility and Low- $T$ Mobility Characterization

K. Saraswat, T. Krishnamohan, A. Pethe, 2009, IEEE Transactions on Electron Devices.

Investigation of the performance limits of III-V double-gate n-MOSFETs

K. Saraswat, H. Wong, Y. Nishi, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Carbon Nanotube Transistor Circuits - Models and Tools for Design and Performance Optimization

H. Wong, G. Wan, T. Krishnamohan, 2006, 2006 IEEE/ACM International Conference on Computer Aided Design.

Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling

H. Wong, H.-S.P. Wong, T. Krishnamohan, 2007, IEEE Transactions on Electron Devices.

Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Qian Wang, Krishna C. Saraswat, Hongjie Dai, 2003 .

High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations

Donghyun Kim, K. Saraswat, Y. Nishi, 2006, IEEE Transactions on Electron Devices.

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Chi On Chui, G. Groeseneken, M. Heyns, 2008, IEEE Transactions on Electron Devices.

Optimal design of III–V heterostructure MOSFETs

K. Saraswat, A. Nainani, Ze Yuan, 2010, 2010 International Conference on Simulation of Semiconductor Processes and Devices.

Properties and Trade-Offs of Compound Semiconductor MOSFETs

K. Saraswat, T. Krishnamohan, Donghyun Kim, 2010 .

High performance germanium MOSFETs

Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, 2006 .

High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments

Y. Nishi, K. Uchida, Z. Krivokapic, 2006, IEEE Transactions on Electron Devices.

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

Duygu Kuzum, Aneesh Nainani, Tejas Krishnamohan, 2011, IEEE Transactions on Electron Devices.

Network of Recurrent Events — a Case Study of Japan

T. Krishnamohan, P. Revathi, 2010, 1001.4258.

Characteristics of surface states and charge neutrality level in Ge

Duygu Kuzum, Krishna C. Saraswat, Tejas Krishnamohan, 2009 .

High Performance, Strained-Ge, Heterostructure p-MOSFETs

K. Saraswat, Y. Nishi, C. Jungemann, 2007 .

Performance Evaluation of III-V Double-Gate n-MOSFETs

K. Saraswat, T. Krishnamohan, Donghyun Kim, 2008, 2008 Device Research Conference.

Theoretical evaluation of performance in biaxially-strained GaAs and In0.75Ga0.25As NMOS DGFETs

K. Saraswat, T. Krishnamohan, Donghyun Kim, 2008, 2008 IEEE Silicon Nanoelectronics Workshop.

Synthesis of β‐Arylacyl/β‐Heteroarylacyl‐β‐alkylidene Malonates and Their Application in Substituted Pyridone Synthesis

T. Krishnamohan, C. Gill, M. Madhubabu, 2013 .

Carbon Nanotube Device Modeling and Circuit Simulation

H.-S. Philip Wong, Jie Deng, Albert Lin, 2009 .

Schottky-Barrier Carbon Nanotube Field Effect Transistor Modeling

Arash Hazeghi, Tejas Krishnamohan, H. Wong, 2006 .

Ge based high performance nanoscale MOSFETs

Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, 2005 .

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Y. Oshima, D. Kuzum, Yun Sun, 2008, IEEE Electron Device Letters.

Carbon Nanotube Transistor Circuits - Models and Tools for Design and Performance Optimization

H.-S. Philip Wong, Jie Deng, Gordon C. Wan, 2006, IEEE/ACM International Conference on Computer-Aided Design.

Band to Band Tunneling limited Off state Current in Ultra-thin Body Double Gate FETs with High Mobility Materials : III-V, Ge and strained Si/Ge

Y. Nishi, K. Saraswat, Y. Nishi, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics

Duygu Kuzum, Tejas Krishnamohan, K. Saraswat, 2011, IEEE Transactions on Electron Devices.

Hole Mobility and Its Enhancement with Strain for Technologically Relevant III-V Semiconductors

K. Saraswat, A. Nainani, T. Krishnamohan, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

A model for crystal growth during metal induced lateral crystallization of amorphous silicon

Krishna C. Saraswat, Tejas Krishnamohan, K. Saraswat, 2003 .

Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs

K. Saraswat, T. Krishnamohan, Donghyun Kim, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Band to Band Tunneling Study in High Mobility Materials : III-V, Si, Ge and strained SiGe

K. Saraswat, H. Wong, T. Krishnamohan, 2007, 2007 65th Annual Device Research Conference.

PERFORMANCE LIMITATIONS OF Si CMOS AND ALTERNATIVES FOR NANOELECTRONICS

C. O. Chui, P. Kapur, K. Saraswat, 2006 .

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Krishna C. Saraswat, Mario G. Ancona, J. B. Boos, 2011 .

A novel sub-20 nm depletion-mode double-gate (DMDG) FET

K. Saraswat, T. Krishnamohan, Z. Krivokapic, 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..