B. Brar
发表
D. Antoniadis,
J. D. del Alamo,
D. Kim,
2009,
2009 IEEE International Electron Devices Meeting (IEDM).
Theodore S. Moise,
Gary A. Frazier,
Alan Seabaugh,
1997
.
J. Laskar,
B. Matinpour,
E. Beam,
1999,
IEEE Electron Device Letters.
M. Urteaga,
Daehyun Kim,
B. Brar,
2012
.
M. Urteaga,
M. Rodwell,
A. Gossard,
2008
.
M. Urteaga,
M. Rodwell,
R. Pierson,
2017,
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A.L. Sailer,
R. Pierson,
B. Brar,
2003,
IEEE MTT-S International Microwave Symposium Digest, 2003.
M. Urteaga,
M. Rodwell,
R. Pierson,
2004,
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
M. Urteaga,
M. Rodwell,
R. Pierson,
2004,
Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..
Z. Griffith,
M. Urteaga,
N. Parthasarathy,
2006,
2006 IEEE Compound Semiconductor Integrated Circuit Symposium.
Z. Griffith,
V. Paidi,
M. Urteaga,
2005,
IEEE Journal of Solid-State Circuits.
Z. Griffith,
M. Urteaga,
J. Bergman,
2016,
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Amy W. K. Liu,
J. Fastenau,
D. Lubyshev,
2009
.
D. Mensa,
M. Urteaga,
R. Pierson,
2008,
2008 20th International Conference on Indium Phosphide and Related Materials.
M. Urteaga,
M. Rodwell,
R. Pierson,
2004,
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
B. Gilbert,
B. Brar,
E. Daniel,
2006,
IEEE Microwave and Wireless Components Letters.
M. Rodwell,
A. Gossard,
B. Brar,
2004,
IEEE Microwave and Wireless Components Letters.
J. Bergman,
G. Nagy,
B. Brar,
2006,
2006 IEEE MTT-S International Microwave Symposium Digest.
A. Gossard,
B. Brar,
J. Hacker,
2006
.
Mark J. W. Rodwell,
Arthur C. Gossard,
Bobby Brar,
2003,
International Conference onIndium Phosphide and Related Materials, 2003..
P. Marshall,
B. Gilbert,
B. Brar,
2006,
2006 IEEE Radiation Effects Data Workshop.
J. Fastenau,
D. Lubyshev,
B. Brar,
2008,
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
B. Brar,
D. Leonard,
1995
.
B. Brar,
J. Zinck,
J. Speck,
1997
.
B. Brar,
A. Seabaugh,
W. Kirk,
1998,
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.
E. Augendre,
M. Urteaga,
B. Brar,
2009,
2009 IEEE International SOI Conference.
T. E. Kazior,
Bobby Brar,
Dmitri Lubyshev,
2009
.
F. Morris,
F. Morris,
B. Brar,
1998,
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
S. Lee,
Z. Griffith,
B. Brar,
2004,
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.
J.B. Hacker,
B. Brar,
J. Bergman,
2006,
IEEE Transactions on Microwave Theory and Techniques.
John A. Higgins,
Richard Pierson,
Berinder Brar,
2002,
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
B. Brar,
2011
.
Dae-Hyun Kim,
Zach Griffith,
Wonill Ha,
2010,
2010 IEEE MTT-S International Microwave Symposium.
M. Urteaga,
B. Brar,
Z. Griffith,
2019,
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).
peixiong zhao,
R. Reed,
D. Fleetwood,
2010,
2010 IEEE International Reliability Physics Symposium.
J.B. Hacker,
B. Brar,
J. Bergman,
2007,
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
J. Bergman,
G. Nagy,
A. Ikhlassi,
2004,
Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..
B. Brar,
J. Bergman,
P. Rowell,
2002,
Proceedings. IEEE Lester Eastman Conference on High Performance Devices.
Xiao Shen,
R A Reed,
R D Schrimpf,
2010,
IEEE Transactions on Electron Devices.
M. Urteaga,
M. Rodwell,
A. Gossard,
2012,
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Sriram Chandrasekaran,
Wonill Ha,
Bobby Brar,
2008
.
B. Brar,
A. Seabaugh,
E. Jackson,
2001
.
J. Fastenau,
W. K. Liu,
D. Lubyshev,
2009
.
Z. Griffith,
B. Brar,
M.J.W. Rodwell,
2006,
2006 IEEE MTT-S International Microwave Symposium Digest.
D-H Kim,
J. A. del Alamo,
T-W Kim,
2014,
2014 IEEE International Electron Devices Meeting.
E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator
M. Urteaga,
D. Kim,
B. Brar,
2012,
2012 International Electron Devices Meeting.
M. Rodwell,
A. Gossard,
B. Brar,
2003,
61st Device Research Conference. Conference Digest (Cat. No.03TH8663).