Wei Liu

发表

Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics

Y. Yeo, B. Liu, Xinke Liu, 2011 .

Fabricating high-quality GaN-based nanobelts by strain-controlled cracking of thin solid films for application in piezotronics

D. Chi, Wei Liu, S. Chua, 2012 .

Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures

Wei Liu, Hongwei Zhu, X. W. Sun, 2015 .

Enhanced waveguide-type ultraviolet electroluminescence from ZnO/MgZnO core/shell nanorod array light-emitting diodes via coupling with Ag nanoparticles localized surface plasmons.

Hai Yang Xu, Wei Liu, Jiangang Ma, 2015, Nanoscale.

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide*

Mo Li, Wei Liu, Ping Chen, 2017 .

Suppression of optical field leakage to GaN substrate in GaN-based green laser diode

Wei Liu, Ping Chen, D. Jiang, 2017 .

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Mo Li, Wei Liu, Ping Chen, 2018, Japanese Journal of Applied Physics.

Assignment of deep levels causing yellow luminescence in GaN

Soo Jin Chua, Chew Beng Soh, Wei Liu, 2004 .

Novel tunable phosphor‐free white III‐nitride light emitting diodes based on indium rich InGaN nanostructures

J. Teng, Wei Liu, S. Chua, 2009 .

Low thermal-mass LEDs: size effect and limits.

Wei Liu, X. W. Sun, H. Demir, 2014, Optics express.

Improved Quantum Efficiency in Semipolar $(1\bar{1}01)$ InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth

Wei Liu, Zhong Chen, Yijun Lu, 2013, IEEE Transactions on Electron Devices.

Effect of Morphological and Structural Properties on SIMS Depth Profiles of InGaN/GaN Multiple Quantum Wells Grown on Sapphire by MOCVD

D. Chi, Wei Liu, S. Chua, 2015 .

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

Wei Liu, Ping Chen, D. Jiang, 2016 .

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials*

Mo Li, Hui Yang, Wei Liu, 2017 .

Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Hui Yang, Wei Liu, Ping Chen, 2016 .

Layer-by-layer oxidation of InN(0001) thin films into body-center cubic In2O3(111) by cycle rapid thermal annealing

D. Chi, Wei Liu, Hongfei Liu, 2012 .

Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

Z. Liu, Hui Yang, Wei Liu, 2015 .

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

Mo Li, Wei Liu, D. Jiang, 2018, IEEE Photonics Journal.

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

Mo Li, Hui Yang, Wei Liu, 2017, IEEE Photonics Journal.

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

Wei Liu, X. W. Sun, H. Demir, 2014 .

Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells

Wei Liu, Zhong Chen, Yijun Lu, 2013, IEEE Photonics Journal.

Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

Wei Liu, X. W. Sun, H. Demir, 2014 .

Blue to deep UV light emission from a p-Si/AlN/Au heterostructure

Wei Liu, S. Chua, X. W. Sun, 2009 .

The effects of cap layers on electrical properties of indium nitride films

Wei Liu, S. Chua, C. B. Soh, 2010 .

Suppression of hole leakage by increasing thickness of the first AlGaN barrier layer for GaN/AlGaN ultraviolet light-emitting diode

Wei Liu, Xiaoya Fan, Shi-ying Yuan, 2021 .

Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes

S. Denbaars, Wei Liu, Handong Sun, 2014 .

AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process

K. W. Chan, Y. Yeo, Xinke Liu, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells

Wei Liu, S. Tong, S. Chua, 2002 .

InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

Xiao Wei Sun, Wei Liu, Yun Ji, 2014 .

A hole accelerator for InGaN/GaN light-emitting diodes

Wei Liu, X. W. Sun, H. Demir, 2014 .

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

Wei Liu, X. W. Sun, H. Demir, 2013 .

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

Wei Liu, X. W. Sun, H. Demir, 2013 .

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes.

Wei Liu, X. W. Sun, H. Demir, 2014, Optics express.

Exciton recombination in ZnO nanorods grown on GaN/sapphire template

Wei Liu, S. Tripathy, H. Cho, 2009 .

Leakage of holes induced by Si doping in the AlGaN first barrier layer in GaN/AlGaN multiple-quantum-well ultraviolet light-emitting diodes

Wei Liu, Xiaoya Fan, Shi-ying Yuan, 2021 .

Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells

Wei Liu, D. Jiang, Degang Zhao, 2019, Materials Research Express.

Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption

Mo Li, Wei Liu, Ping Chen, 2018, Applied Surface Science.

High-Pressure Photon Ionization Source for TOFMS and Its Application for Online Breath Analysis.

Keyong Hou, Wei Liu, Ping Chen, 2016, Analytical chemistry.

Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs

Mo Li, Wei Liu, D. Jiang, 2018 .

Visible-blind metal-semiconductor-metal ultra-violet detectors based on epitaxially laterally overgrown gallium nitride

Wei Liu, S. Chua, X. H. Zhang, 2001 .

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Mo Li, Hui Yang, Wei Liu, 2017 .

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.

Mo Li, Wei Liu, Ping Chen, 2017, Applied optics.

Crystalization-enhanced Stability by Effectively Suppressing Pho-tooxidation Defect for Lasing Emission and Electroluminescent Device

Chunxiang Xu, Wei Liu, Linghai Xie, 2021 .

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Mo Li, Wei Liu, Ping Chen, 2018 .

Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Y. Yeo, Xinke Liu, E. Low, 2011 .

Total and speciated arsenic levels in rice from China

Wei Liu, Yan Li, Guilin Zhang, 2010, Food additives & contaminants. Part A, Chemistry, analysis, control, exposure & risk assessment.

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

Hui Yang, L. Xiaojing, Wei Liu, 2016 .

Spectroscopic studies of the effects of two‐dimensional electron gas on interband transitions

Wei Liu, Ruozheng Wang, D. Jiang, 1995 .

Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition

Wei Liu, S. Chua, Peng Chen, 2004 .

New formation mechanism of electric field domain due to Γ‐X sequential tunneling in GaAs/AlAs superlattices

Wei Liu, D. Jiang, Yaohui Zhang, 1994 .

Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.

Xiao Wei Sun, Wei Liu, Yun Ji, 2015, Optics express.

Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104)

Mo Li, Wei Liu, Ping Chen, 2017 .

Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates

Wei Liu, S. Chua, Hailong Zhou, 2007 .

Excimer-Laser-Induced Oxidation of GaN Epilayer

Wei Liu, S. Chua, G. Lim, 2003 .

Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration.

Hai Yang Xu, Wei Liu, Shiyu Sun, 2013, Nanoscale.

PHOTOVOLTAIC SPECTROSCOPIC STUDY OF GAN EPILAYERS AND INGAN QUANTUM WELL STRUCTURES

Wei Liu, K. Teo, Koh Matsumoto, 1999 .

Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation

Wei Liu, L. Tan, Youming Lu, 2015 .

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

Wei Liu, Ping Chen, D. Jiang, 2020 .

Rotation of in-plane structural anisotropy at the interface of an a-plane InN/GaN heterostructure grown by MOCVD on r-plane sapphire

D. Chi, Wei Liu, Hongfei Liu, 2016 .

Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

Xiao Wei Sun, Wei Liu, Yun Ji, 2013 .

On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

Xiao Wei Sun, Wei Liu, Yun Ji, 2013, Journal of Display Technology.

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

Xiao Wei Sun, Wei Liu, Yun Ji, 2014, Optics letters.

High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process

Y. Yeo, D. Chi, Xinke Liu, 2014 .

The residual C concentration control for low temperature growth p-type GaN

Wei Liu, Ping Chen, D. Jiang, 2017 .

Development of a low power and high integration readout ASIC for time projection chambers in 65 nm CMOS

Wei Liu, Yulan Li, Fule Li, 2020, Journal of Physics: Conference Series.

Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination

Mo Li, Wei Liu, Ping Chen, 2017 .

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Wei Liu, X. W. Sun, H. Demir, 2013, Optics express.

Influence of carrier gas H 2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

Mo Li, Wei Liu, Ping Chen, 2018, Chinese Physics B.

Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al_{0.45}Ga_{0.55}As Superlattice.

L. Bonilla, Wei Liu, Xiujian Li, 2018, Physical review letters.

Evidence of Γ–X sequential resonant tunneling in GaAs/AlAs superlattices

Wei Liu, Baoquan Sun, D. Jiang, 1996 .

Design and implementation of true random number generators based on semiconductor superlattice chaos

Peng Ding, Helun Song, Zhizhen Yin, 2021, Microelectron. J..

An Investigation of the Formation Mechanisms of Electric Field Domains in GaAs/AlAs Superlattices

Wei Liu, Baoquan Sun, D. Jiang, 1996 .

Effect of oxygen-related surface adsorption on the efficiency and stability of ZnO nanorod array ultraviolet light-emitting diodes

Wei Liu, Y. Liu, H. Y. Xu, 2012 .

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Mo Li, Wei Liu, Ping Chen, 2018 .

New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode

Mo Li, Wei Liu, Ping Chen, 2017 .

Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding

Hoi Wai Choi, J. Teng, Wei Liu, 2000 .

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Wei Liu, X. W. Sun, H. Demir, 2014, Optics express.

Tandem InGaN/GaN light-emitting diodes

Wei Liu, X. W. Sun, H. Demir, 2015, International Conference on Intelligent Pervasive Computing.

A hole modulator for InGaN/GaN light-emitting diodes

Xiao Wei Sun, Yun Ji, Hilmi Volkan Demir, 2015 .

A PN-type quantum barrier for InGaN/GaN light emitting diodes.

Wei Liu, X. W. Sun, H. Demir, 2013, Optics express.

InGaN/GaN light-emitting diode with a polarization tunnel junction

Wei Liu, X. W. Sun, H. Demir, 2013 .

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.

Wei Liu, X. W. Sun, H. Demir, 2013, Optics letters.

Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

J. Teng, Wei Liu, H. Demir, 2014 .

Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

Wei Liu, X. W. Sun, H. Demir, 2014 .

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes*

Mo Li, Wei Liu, Ping Chen, 2018 .

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

Wei Liu, X. W. Sun, H. Demir, 2014 .

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths*

Mo Li, Hui Yang, L. Xiaojing, 2017 .

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Wei Liu, Degang Zhao, Ping Chen, 2022, Crystals.

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.

Mo Li, Wei Liu, Ping Chen, 2018, Optics express.

Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al_{0.45}Ga_{0.55}As Superlattice.

L. Bonilla, Wei Liu, Xiujian Li, 2018, Physical review letters.

Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness

Wei Liu, D. Jiang, Degang Zhao, 2020, Journal of Electronic Materials.

Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition

G. D. Pitt, Wei Liu, Zhe Chuan Feng, 2000, SPIE Optics + Photonics.

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes*

Mo Li, Wei Liu, Ping Chen, 2017 .