I. Ohbu

发表

Improved hole transport properties of highly strained In0.35Ga0.65As channel double-modulation-doped structures grown by MBE on GaAs

T. Mishima, M. Kudo, H. Matsumoto, 1997 .

Highly strained ln0.35Ga0.65As/GaAs layers grown by molecular beam epitaxy for high hole mobility transistors

T. Mishima, M. Kudo, H. Matsumoto, 1996 .

The electron mobility transition in n-GaAs heavily doped channel

I. Ohbu, H. Mizuta, Y. Ohkura, 1994 .

Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT's with platinum buried gates

Makoto Kudo, Akihisa Terano, Isao Ohbu, 1998 .

Dual-gate FETs for ultra-high efficiency HPA

H. Matsumoto, T. Tanimoto, I. Ohbu, 1995, 1995 53rd Annual Device Research Conference Digest.

Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor

T. Mishima, I. Ohbu, J. Allam, 1996 .

High-efficiency dual-gate InGaAs pseudomorphic HEMTs for high-power amplifiers using single-voltage supply

M. Kudo, H. Matsumoto, T. Tanimoto, 1995, Proceedings of International Electron Devices Meeting.

Thickness control of Ga1−xAlxAs layers grown by liquid phase epitaxy at low growth temperature

I. Ohbu, Y. Kashiwada, Todoroki Satoru, 1987 .

Backside-emitter-structure C-up GaAs HBTs for small power amplifiers

H. Matsumoto, I. Ohbu, K. Tanaka, 2003, 2003 International Symposium on Compound Semiconductors.

Design of C-up GaAs HBTs with backside emitter for small power amplifiers

H. Matsumoto, I. Ohbu, K. Tanaka, 2003, 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767).

A correlation between crystalline qualities and growth parameters in GaAs on Si grown by molecular‐beam epitaxy

I. Ohbu, M. Ishino, T. Shimada, 1988 .

Time dependence of the surface Fermi level of GaAs in atmosphere

I. Ohbu, H. Mizuta, M. Takahama, 1993 .

Defects in low‐temperature‐grown GaAs annealed at 800 °C

I. Ohbu, K. Hiruma, M. Takahama, 1992 .

AsH3 Cracking Characteristics in Gas Source Molecular Beam Epitaxy

I. Ohbu, T. Mozume, Yuta Tezen, 1990 .

Formation of High Quality GaAs/Si Hetero-Structure by Solid Phase Epitaxy

I. Ohbu, M. Ishino, M. Miyao, 1988 .

Effects of indium doping on crystalline qualities of GaAs on Si by molecular beam epitaxy

I. Ohbu, M. Ishino, T. Mozume, 1989 .

Optimization of interfaces in InGaAs/InP heterostructures grown by gas source molecular‐beam epitaxy

I. Ohbu, T. Tanoue, T. Mozume, 1995 .

Ultrafast characterization of an in‐plane gate transistor integrated with photoconductive switches

T. Mishima, I. Ohbu, J. Allam, 1995 .

Investigation of Thermal Stability in Multifinger GaInP/GaAs Collector-Up Tunneling–Collector HBTs With Subtransistor Via-Hole Structure

H. Matsumoto, I. Ohbu, K. Tanaka, 2006, IEEE Transactions on Electron Devices.