Walukiewicz

发表

Band-edge hydrostatic deformation potentials in III-V semiconductors.

Haller, Nolte, Walukiewicz, 1987, Physical review letters.

Mechanism of Fermi-level stabilization in semiconductors.

Walukiewicz, 1988, Physical review. B, Condensed matter.

Defect formation and diffusion in heavily doped semiconductors.

Walukiewicz, 1994, Physical review. B, Condensed matter.

Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure.

Suski, Wetzel, Haller, 1996, Physical review. B, Condensed matter.

Hydrogen passivation of Se and Te in AlSb.

Haller, Walukiewicz, Mccluskey, 1996, Physical review. B, Condensed matter.

Response to "Comment on 'Electron mobility in modulation-doped heterostructures' "

Walukiewicz, Ruda, Lagowski, 1985, Physical review. B, Condensed matter.

Carrier scattering by native defects in heavily doped semiconductors.

Walukiewicz, 1990, Physical review. B, Condensed matter.

Neutral-impurity scattering in isotopically engineered Ge.

Haller, Beeman, Fuchs, 1994, Physical review. B, Condensed matter.

Unification of the properties of the EL2 defect in GaAs.

Weber, Matsui, Meyer, 1989, Physical review. B, Condensed matter.

Fermi level stabilization in semiconductors: Implications for implant activation efficiency. [III-V semiconductors]

Walukiewicz, 1987 .

Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

Ramdas, Haller, Ager, 2000, Physical review letters.

Phosphorus antisite defects in low-temperature InP.

Chen, Weber, Liang, 1993, Physical review. B, Condensed matter.

Doping-induced suppression of dislocation formation in semiconductors.

Walukiewicz, 1989, Physical review. B, Condensed matter.

Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure.

Haller, Wolk, Walukiewicz, 1991, Physical review letters.

Acoustic-phonon scattering in modulation-doped heterostructures.

Walukiewicz, 1988, Physical review. B, Condensed matter.

Dependence of transition-metal impurity levels on host composition in III-V semiconductors.

Haller, Nolte, Walukiewicz, 1989, Physical review. B, Condensed matter.

Chadi, Chang, and Walukiewicz reply.

Chang, Chadi, Walukiewicz, 1989, Physical review letters.

Formation of a DX center in InP under hydrostatic pressure.

Haller, Wolk, Walukiewicz, 1992, Physical review letters.

Germanium 70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies.

Haller, Tikhomirov, Fuchs, 1995, Physical review. B, Condensed matter.

Hole mobility in modulation-doped heterostructures: GaAs-AlGaAs.

Walukiewicz, 1985, Physical review. B, Condensed matter.

Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium.

Kim, Ramdas, Haller, 1996, Physical review. B, Condensed matter.

Mechanism of Fermi-level stabilization in semiconductors.

Walukiewicz, 1988, Physical review. B, Condensed matter.