M. Giles

发表

Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers

R. Kotlyar, P. Matagne, L. Shifren, 2006, IEEE Transactions on Electron Devices.

Transient Phosphorus Diffusion Below the Amorphization Threshold

M. Giles, 1991 .

High performance Hi-K + metal gate strain enhanced transistors on (110) silicon

R. Kotlyar, A. Murthy, C. Weber, 2008, 2008 IEEE International Electron Devices Meeting.

Does the Low Hole Transport Mass in and Si Nanowires Lead to Mobility Enhancements at High Field and Stress: A Self-Consistent Tight-Binding Study

R. Kotlyar, Gerhard Klimeck, T. Linton, 2012 .

Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance

R. Kotlyar, C. Weber, T. Linton, 2009 .

Assessment of room-temperature phonon-limited mobility in gated silicon nanowires

R. Kotlyar, P. Matagne, B. Obradovic, 2004 .

Understanding stress enhanced performance in Intel 90nm CMOS technology

R. Kotlyar, P. Matagne, C. Auth, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Analysis of graphene nanoribbons as a channel material for field-effect transistors

Dmitri E. Nikonov, R. Kotlyar, P. Matagne, 2006 .

Inversion mobility and gate leakage in high-k/metal gate MOSFETs

R. Kotlyar, P. Matagne, L. Shifren, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Bias temperature instability variation on SiON/Poly, HK/MG and trigate architectures

C. Auth, S. Natarajan, K. Mistry, 2014, 2014 IEEE International Reliability Physics Symposium.

The Role of Interfaces in Damascene Phase-Change Memory

G. Spadini, B. Johnson, S. Hudgens, 2007, 2007 IEEE International Electron Devices Meeting.

Explanation of reverse short channel effect by defect gradients

M. R. Pinto, C. S. Rafferty, S. J. Hillenius, 1993, Proceedings of IEEE International Electron Devices Meeting.

A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors

M. Giles, M. Law, S. Earles, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Kinetics of Shallow Junction Activation: Physical Mechanisms

J. Hwang, M. Giles, S. Govindaraju, 2006, 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors.

Ion Implantation Calculations in Two Dimensions Using the Boltzmann Transport Equation

Martin D. Giles, M. Giles, 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

A multiple pass application of the Boltzmann transport equation for calculating ion implantation profiles at low energies

M. Giles, J. Gibbons, 1983 .

Modeling solid source boron diffusion for advanced transistor applications

M. Bohr, T. Ghani, J. Sandford, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Large enhancement of boron solubility in silicon due to biaxial stress

S. Louie, T. Lenosky, M. Giles, 2002 .

The Depth Resolution of Dynamic Sims: Experiments and Calculations

M. Giles, J. Hoyt, J. Gibbons, 1986 .

High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology

S. Natarajan, M. D. Giles, S. Mudanai, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Process Technology Variation

M. D. Giles, S. Mudanai, K. J. Kuhn, 2011, IEEE Transactions on Electron Devices.

Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation

J. F. Gibbons, M. D. Giles, M. Giles, 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Defect-coupled diffusion at high concentrations

Martin D. Giles, M. Giles, 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

The ultimate CMOS device and beyond

M. D. Giles, I. Young, K. J. Kuhn, 2012, 2012 International Electron Devices Meeting.

Process modeling for advanced device technologies

Patrick H. Keys, Rishabh Mehandru, P. Fleischmann, 2013, Journal of Computational Electronics.

Process modeling for advanced device technologies

C. Weber, M. Stettler, M. Giles, 2013, Journal of Computational Electronics.

Calculation of Ion Implantat ion Profiles for Two-Dimensional Process Model ing

M. Giles, 2007 .

From Process Corners to Statistical Circuit Design Methodology: Opportunities and Challenges

Martin D. Giles, Sivakumar P. Mudanai, Sourabh Dongaonkar, 2019, IEEE Transactions on Electron Devices.

Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization

M. Giles, F. Leon, S. Odanaka, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Two‐Dimensional Ion Implantation Profiles from One‐Dimensional Projections

M. Giles, J. Gibbons, 1985 .

First-principles-based predictive simulations of B diffusion and activation in ion implanted Si

T. Lenosky, M. Giles, B. Sadigh, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation

M. Giles, J. Gibbons, 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.