E. Fitzgerald

E. Fitzgerald, M. Currie, J. Borenstein, 1999, Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291).

Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition

E. Fitzgerald, R. Jia, 2016 .

Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template

Soo Jin Chua, Chew Beng Soh, Eugene A. Fitzgerald, 2007 .

Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

E. Fitzgerald, S. Chua, Li Zhang, 2013 .

Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching

E. Fitzgerald, S. Chua, S. Tripathy, 2007 .

Sputtered nickel oxide on vertically-aligned multiwall carbon nanotube arrays for lithium-ion batteries

E. Fitzgerald, Qing Zhang, Q. Xiao, 2014 .

The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesis

E. Fitzgerald, S. Chua, K. Loh, 2006 .

Photo-Attachment of Biomolecules for Miniaturization on Wicking Si-Nanowire Platform

K. Leong, W. K. Choi, E. Fitzgerald, 2015, PloS one.

Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate

W. A. Sasangka, E. Fitzgerald, S. Chua, 2018, Thin Solid Films.

Structure and recombination in InGaAs/GaAs heterostructures

Eugene A. Fitzgerald, Peter D. Kirchner, Jerry M. Woodall, 1988 .

Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces

E. Fitzgerald, N. Quitoriano, 2007 .

Dislocations in Relaxed SiGe/Si Heterostructures

E. Fitzgerald, M. Bulsara, M. Currie, 1999 .

Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates

E. Fitzgerald, S. Samavedam, 1997 .

Influence of substrate off-cut on the defect structure in relaxed graded Si-Ge/Si layers

E. Fitzgerald, F. Romanato, S. Samavedam, 1996 .

Minority‐ and majority‐carrier trapping in strain‐relaxed Ge0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical‐vapor deposition

E. Fitzgerald, Yahong Xie, S. Ringel, 1995 .

Photoluminescence investigations of graded, totally relaxed GexSi1-x structures

E. Fitzgerald, J. Michel, L. Kimerling, 1992 .

Surface morphology of related GexSi1−x films

E. Fitzgerald, Yahong Xie, J. Hsu, 1992 .

Elimination of dislocations in heteroepitaxial MBE and RTCVD GexSi1-x grown on patterned Si substrates

Martin L. Green, E. Fitzgerald, B. Weir, 1990 .

Elimination of interface defects in mismatched epilayers by a reduction in growth area

E. Fitzgerald, J. Woodall, P. Kirchner, 1988 .

Dislocation structure, formation, and minority‐carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistors

L. Eastman, E. Fitzgerald, Y. Ashizawa, 1988 .

The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures

L. Eastman, E. Fitzgerald, Y. Ashizawa, 1988 .

Molecular beam epitaxy of dysprosium barium cuprous oxides using molecular oxygen

E. Fitzgerald, E. Hellman, E. Hartford, 1992 .

Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates

J. Boeckl, E. Fitzgerald, M. Currie, 2003 .

Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase Shifter

D. Antoniadis, E. Fitzgerald, X. Gong, 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

B. H. Koh, W. K. Choi, D. Antoniadis, 2005 .

Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

D. Antoniadis, E. Fitzgerald, K. Pey, 2010 .

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

W. K. Choi, D. Antoniadis, E. Fitzgerald, 2002 .

Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator- semiconductor structure

W. K. Choi, D. Antoniadis, E. Fitzgerald, 2002 .

Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell

E. Fitzgerald, J. Harris, S. Ringel, 2011 .

Deep level defects in proton radiated GaAs grown on metamorphic SiGe∕Si substrates

S. Messenger, M. González, J. Lorentzen, 2006 .

Effects of valence band tails on the blue and red spectral shifts observed in the temperature‐dependent photoluminescence of InN

E. Fitzgerald, S. Chua, C. B. Soh, 2013 .

The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors

Eugene A. Fitzgerald, George Apostolopoulos, G. Apostolopoulos, 2011 .

Improved interfacial state density in Al2O3/GaAs interfaces using metal-organic chemical vapor deposition

E. Fitzgerald, Cheng-wei Cheng, 2010 .

FABRICATION OF GERMANIUM NANOWIRES BY OBLIQUE ANGLE DEPOSITION

W. K. Choi, E. Fitzgerald, W. Chim, 2006 .

Oblique Angle Deposition of Germanium Film on Silicon Substrate

W. K. Choi, E. Fitzgerald, W. Chim, 2005 .

Two-dimensional AlGaInP∕GaInP photonic crystal membrane lasers operating in the visible regime at room temperature

E. Fitzgerald, S. Chua, W. Ji, 2007 .

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs

D. Antoniadis, E. Fitzgerald, J. Hennessy, 2009 .

MOCVD growth of GaN on SEMI-spec 200 mm Si

E. Fitzgerald, S. Chua, K. Lee, 2017 .

Control wafer bow of InGaP on 200 mm Si by strain engineering

B. Wang, E. Fitzgerald, J. Michel, 2017 .

MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS

C. S. Tan, E. Fitzgerald, K. Lee, 2018, Semiconductor Science and Technology.

GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

E. Fitzgerald, C. Heidelberger, 2017 .

Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures

E. Fitzgerald, Yahong Xie, S. Ringel, 1995 .

The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy

E. Fitzgerald, S. Yoon, J. Fälth, 2008, Nanotechnology.

Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases

Lester F. Eastman, Eugene A. Fitzgerald, William J. Schaff, 1988 .

Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance

Lester F. Eastman, F. E. Najjar, Eugene A. Fitzgerald, 1987 .

The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In 0.12 Ga 0.88 As/GaAs Heterostructures

E. Fitzgerald, J. Woodall, P. Kirchner, 1987 .

Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications

C. S. Tan, E. Wang, D. Antoniadis, 2020, 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Deep level traps in semi‐polar n‐GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

E. Fitzgerald, S. Ringel, P. Vennégués, 2016 .

Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots

E. Fitzgerald, S. Pennycook, S. Gradečak, 2021, ACS Photonics.

Germanium-on-insulator virtual substrate for InGaP epitaxy

B. Wang, C. S. Tan, E. Fitzgerald, 2017 .

Spectrum Splitting Micro-Concentrator Assembly for Laterally-arrayed Multi-Junction Photovoltaic Module

E. Fitzgerald, D. Perreault, J. Michel, 2018, 2018 Conference on Lasers and Electro-Optics (CLEO).

Fabrication of p‐type ZnO nanorods/n‐GaN film heterojunction ultraviolet light‐emitting diodes by aqueous solution method

E. Fitzgerald, Chua Soo Jin, Nguyen Xuan Sang, 2013 .

Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways

Rachel C. Kurchin, E. Fitzgerald, T. Unold, 2016, Photovoltaic Specialists Conference.

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

J. Fastenau, W. K. Liu, D. Lubyshev, 2008 .

Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications

E. Fitzgerald, S. Ting, R. Sieg, 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

E. Fitzgerald, S. Chua, C. B. Soh, 2013 .

Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

W. K. Choi, E. Fitzgerald, W. Chim, 2006 .

Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrix

W. K. Choi, K. C. Seow, E. Fitzgerald, 2006 .

TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

W. K. Choi, K. C. Seow, E. Fitzgerald, 2006 .

Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device

Tay, W. K. Choi, D. Antoniadis, 2003 .

Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

W. K. Choi, D. Antoniadis, E. Fitzgerald, 2003 .

Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices

Tay, W. K. Choi, D. Antoniadis, 2002 .

Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

C. S. Tan, E. Fitzgerald, K. Lee, 2013, Journal of Electronic Materials.

Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

C. S. Tan, E. Fitzgerald, K. Lee, 2013 .

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Y. Yeo, E. Fitzgerald, K. Lee, 2016 .

Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2/Si0.75Ge0.25 using various H2 pressures

E. Fitzgerald, L. Kimerling, G. Taraschi, 2003 .

From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects

E. Fitzgerald, Yahong Xie, D. Monroe, 1994 .

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

M. Lee, E. Fitzgerald, T. Langdo, 2002 .

N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

W. K. Choi, C. Maiti, D. Antoniadis, 2001 .

Phase-controlled, heterodyne laser-induced transient grating measurements of thermal transport properties in opaque material

K. Nelson, E. Fitzgerald, M. Bulsara, 2011, 1109.6685.

Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe∕Sia)

C. L. Dohrman, E. Fitzgerald, D. Isaacson, 2006 .

Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature

E. Fitzgerald, Y. Mii, Yahong Xie, 1991 .

Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers

E. Fitzgerald, S. Pennycook, S. Gradečak, 2020, Semiconductor Science and Technology.

Monolithic III-V/Si integration

J. Fastenau, D. Lubyshev, B. Brar, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Nanostructured Thin Film Silicon Anodes for Li-Ion Microbatteries.

W. K. Choi, C. Thompson, E. Fitzgerald, 2015, Journal of nanoscience and nanotechnology.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

E. Fitzgerald, T. Langdo, G. Taraschi, 2005 .

Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

C. S. Tan, D. Antoniadis, E. Fitzgerald, 2011 .

Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors

C. S. Tan, D. Antoniadis, E. Fitzgerald, 2010 .

Selective electroless copper metallization of palladium silicide on silicon substrates

R. V. Dover, L. Feldman, E. Fitzgerald, 1991 .

$\hbox{Al}_{2}\hbox{O}_{3}$ Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon

Kuan-Neng Chen, C. S. Tan, E. Fitzgerald, 2013, IEEE Transactions on Electron Devices.

Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

W. K. Choi, D. Chi, D. Antoniadis, 2006 .

Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate

C. L. Dohrman, E. Fitzgerald, S. Yoon, 2009 .

Misfit accommodation at epitaxial interfaces

E. Fitzgerald, W. Jesser, K. Jagannadham, 1991 .

Reduction of Defect Density in Heteroepitaxial Ge x Si 1-x Grown on Patterned Si Substrates

E. Fitzgerald, B. Weir, Yahong Xie, 1989 .

Studies of electrically active defects in relaxed GeSi films using a near‐field scanning optical microscope

E. Fitzgerald, Yahong Xie, J. Hsu, 1996 .

High quality Ge-OI, III–V-OI on 200 mm Si substrate

C. S. Tan, E. Fitzgerald, J. Michel, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

Materials, Processes, and Markets for Monolithic III-V Devices in Silicon Integrated Circuits

E. Fitzgerald, 2018, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Coplanar Integration of Lattice-Mismatched Semiconductors with Silicon by Wafer Bonding Ge / Si1 − x Ge x / Si Virtual Substrates

Christopher W. Leitz, Eugene A. Fitzgerald, Gianni Taraschi, 2004 .

Etch Selectivity of Novel Epitaxial Layers for Bulk Micromachining

E. Fitzgerald, M. Currie, J. Borenstein, 1998 .

Laser Fabrication by Using Photonic Crystal

E. Fitzgerald, S. Chua, A. Vajpeyi, 2003 .

Microstructure and conductance-slope of InAs/GaSb tunnel diodes

E. Fitzgerald, Ryan M. Iutzi, 2014, 1401.5840.

Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition

E. Fitzgerald, D. Monroe, Yahong Xie, 1994 .

The Effect of Location on the Structure and Mechanical Properties of Selective Laser Melted 316 L Stainless

E. Fitzgerald, W. Everhart, Steel., 2016 .

Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density

A. Kortan, E. Fitzgerald, B. Weir, 1992 .

Cathodoluminescence of Ingaas-GaAs Single Heterostructures

K. Kavanagh, E. Fitzgerald, J. Woodall, 1986 .

Silicon Germanium Epitaxy: A New Material for MEMS

E. Fitzgerald, M. Currie, J. Borenstein, 2000 .

High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures

E. Fitzgerald, M. Bulsara, Li Yang, 2012 .

Characterization of compositionally graded Si1−xGex alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging

E. Fitzgerald, Yahong Xie, P. Silverman, 1993 .

Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge∕SiGe∕Si substrates

J. Boeckl, M. Lee, E. Fitzgerald, 2005 .

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates

J. Boeckl, M. Lee, E. Fitzgerald, 2003 .

Low-Threshold Lasing in Strained Germanium under Optical Pumping

K. Saraswat, C. S. Tan, E. Fitzgerald, 2018, 2018 Conference on Lasers and Electro-Optics (CLEO).

Novel CMOS-Compatible Optical Platform

M. Lee, E. Fitzgerald, V. Yang, 2003 .

Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes.

E. Fitzgerald, S. Pennycook, S. Gradečak, 2022, ACS applied materials & interfaces.

The electrical and defect properties of erbium‐implanted silicon

Jurgen Michel, Lionel C. Kimerling, Eugene A. Fitzgerald, 1991 .

Strategies For Direct Monolithic Integration of AlxGa(1-x)As/InxGa(1-x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1-x) Buffer Layers

Harry L. T. Lee, Rajeev J Ram, E. Fitzgerald, 2001 .

Strained SiGe Materials for High Quantum Efficiency Photodiodes at µ = 1.3 to 1.5µm

E. Fitzgerald, L. Kimerling, H. Luan, 1999 .

ZnO coaxial nanorod Homojunction UV light-emitting diodes prepared by aqueous solution method.

E. Fitzgerald, S. Chua, C. B. Tay, 2012, Small.

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

M. Lee, E. Fitzgerald, 2003 .

Channel engineering of SiGe-based heterostructures for high mobility MOSFETs

D. Antoniadis, M. Lee, E. Fitzgerald, 2001 .

High Quality Germanium Photodiodes on Silicon Substrates Using an Intermediate Chemical Mechanical Polishing Step

E. Fitzgerald, M. Currie, S. Samavedam, 1997 .

Luminescence and structural study of porous silicon films

T. D. Harris, F. Ross, E. Fitzgerald, 1992 .

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire

E. Fitzgerald, S. Chua, T. Song, 2002 .

Alternatives to thick MBE-grown relaxed SiGe buffers

E. Fitzgerald, M. Bulsara, C. Rosenblad, 2000 .

Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications

E. Fitzgerald, A. Pitera, 2005 .

Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding and Metastable Stop Layers

Thomas A. Langdo, Eugene A. Fitzgerald, Gianni Taraschi, 2004 .

Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back

D. Antoniadis, E. Fitzgerald, M. Currie, 2002 .

Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition

E. Fitzgerald, M. Bulsara, 2012 .

The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si 0.7 Ge 0.3

E. Fitzgerald, D. Monroe, R. Vandover, 1993 .

MICROSTRUCTURE OF ERBIUM-IMPLANTED SI

E. Fitzgerald, A. Polman, J. Poate, 1991 .

Stability and composition of Ni–germanosilicided Si1−xGex films

Dimitri A. Antoniadis, Kin Leong Pey, Eugene A. Fitzgerald, 2004 .

Thermal reaction of nickel and Si0.75Ge0.25 alloy

Pooi See Lee, W. K. Choi, D. Antoniadis, 2002 .

Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

Dimitri A. Antoniadis, Kin Leong Pey, Eugene A. Fitzgerald, 2002 .

Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex

M. Lee, E. Fitzgerald, 2003 .

Studies on the Electrical Characteristics of Ni and NiPt-alloy Silicided Schottky Diodes

C. K. Maiti, W. K. Choi, D. Antoniadis, 2005 .

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Dimitri A. Antoniadis, Judy L. Hoyt, Dalaver H. Anjum, 2003 .

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Eugene A. Fitzgerald, Peter D. Kirchner, Jerry M. Woodall, 1989 .

Study of Ge Out-diffusion During Nickel (Platinum ∼ 0, 5, 10 at.%) Germanosilicide Formation

W. K. Choi, D. Chi, D. Antoniadis, 2004 .

Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors

M. Lee, E. Fitzgerald, 2003 .

MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS

E. Fitzgerald, S. Chua, K. Lee, 2017, IEEE Transactions on Semiconductor Manufacturing.

High efficiency GaAs-on-Si solar cells with high V/sub oc/ using graded GeSi buffers

Mantu K. Hudait, David M. Wilt, Thomas A. Langdo, 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures

E. Fitzgerald, P. Deotare, K. Mukherjee, 2015 .

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

E. Fitzgerald, M. Bulsara, A. Mascarenhas, 2013 .

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Soon Fatt Yoon, Chuan Seng Tan, Bing Wang, 2016 .

Dislocations in strained-layer epitaxy : theory, experiment, and applications

Eugene A. Fitzgerald, E. Fitzgerald, 1991 .

Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112)

D. Antoniadis, M. Lee, E. Fitzgerald, 2006 .

Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate

Steven A. Ringel, Soo Jin Chua, Eugene A. Fitzgerald, 2016 .

Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si

E. Fitzgerald, Yahong Xie, J. Benton, 1998 .

Catalyst proximity effects on the growth rate of Si nanowires

C. Thompson, E. Fitzgerald, K. Pey, 2009 .

Influences of annealing on lithium-ion storage performance of thick germanium film anodes

W. A. Sasangka, E. Fitzgerald, Qing Zhang, 2015 .

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

K. Nelson, E. Fitzgerald, M. Bulsara, 2013, Journal of physics. Condensed matter : an Institute of Physics journal.

Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis

E. Fitzgerald, S. Chua, K. Loh, 2006 .

Synthesis and optical properties of well aligned ZnO nanorods on GaN by hydrothermal synthesis

E. Fitzgerald, S. Chua, K. Loh, 2006 .

Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates

E. Fitzgerald, M. Bulsara, E. Guiot, 2015 .

Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials

E. Fitzgerald, M. Bulsara, K. Mukherjee, 2013 .

Relaxed template for fabricating regularly distributed quantum dot arrays

Mayank T. Bulsara, Thomas A. Langdo, Eugene A. Fitzgerald, 1997 .

Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

Don Monroe, Leonard C. Feldman, Eugene A. Fitzgerald, 1991 .

Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

Eugene A. Fitzgerald, Nathaniel J. Quitoriano, E. Fitzgerald, 2007 .

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

E. Augendre, M. Urteaga, B. Brar, 2009, 2009 IEEE International SOI Conference.

Monolithic integration of InP-based transistors on Si substrates using MBE

T. E. Kazior, Bobby Brar, Dmitri Lubyshev, 2009 .

Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

Carl L. Dohrman, Eugene A. Fitzgerald, C. L. Dohrman, 2007 .

Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices

C. L. Dohrman, E. Fitzgerald, D. Isaacson, 2006, 2006 International SiGe Technology and Device Meeting.

Digital metamorphic alloys

E. Fitzgerald, K. Lee, 2009 .

Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGey/strained-Si heterostructure grown on a relaxed Si1-xGex buffer

M. Lee, E. Fitzgerald, S. Gupta, 2005 .

Effect of Dislocations on VLWIR HgCdTe Photodiodes

T. Parodos, E. A. Fitzgerald, P. Lamarre, 2007 .

High Quality GaN Grown from a Nanoporous GaN Template

E. Fitzgerald, S. Chua, C. B. Soh, 2007 .

Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si

E. Fitzgerald, D. Monroe, Yahong Xie, 1993 .

Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si

Don Monroe, J. M. Kuo, Eugene A. Fitzgerald, 1992 .

Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates

E. Fitzgerald, S. Boles, M. Mori, 2010 .

Microelectronically Fabricated LiCoO 2 / SiO 2 / Polysilicon Power Cells

G. Ceder, E. Fitzgerald, D. Sadoway, 2005 .

Coherent Phonon Heat Conduction in Superlattices

Zhifeng Ren, Jivtesh Garg, Gang Chen, 2012, Science.

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

Jurgen Michel, D. Brasen, Eugene A. Fitzgerald, 1991 .

Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

E. Fitzgerald, M. Bulsara, K. Lee, 2011 .

Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering

E. Fitzgerald, P. Grillot, J.-W. Huang, 2004 .

Engineering high-quality InxGa1-xP graded composition buffers on GaP for transparent substrate light-emitting diodes

Andrew Y. Kim, Eugene A. Fitzgerald, E. Fitzgerald, 1999, Photonics West.

Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures

E. Fitzgerald, S. Samavedam, 1997 .

Si0.5Ge0.5 relaxed buffer photodetectors and low-loss polycrystalline silicon waveguides for integrated optical interconnects at λ=1.3 μm

Lionel C. Kimerling, Ling Liao, Eugene A. Fitzgerald, 1997, Photonics West.

Sub-10 nm diameter InGaAs vertical nanowire MOSFETs

J. D. del Alamo, E. Fitzgerald, A. Vardi, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Properties of Mbe Grown Heterostructures of GaAs/InSb and InP/InSb.

S. K. Sputz, E. Fitzgerald, M. Asom, 1989 .

Design Optimization of Single-Layer Antireflective Coating for GaAs[subscript 1−x]xP[subscript x]x/Si Tandem Cells With x=0, 0.17, 0.29, and 0.37

M. Dahlem, E. Fitzgerald, M. Bulsara, 2015 .

Design Optimization of Single-Layer Antireflective Coating for GaAs$_{{\bf 1-}{\bm x}}$P$_{\bm x}$/Si Tandem Cells With $\hbox{x} = \hbox{0}$, 0.17, 0.29, and 0.37

M. Dahlem, E. Fitzgerald, M. Bulsara, 2015, IEEE Journal of Photovoltaics.

The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

W. K. Choi, D. Chi, D. Antoniadis, 2004 .

Correlation of a generation-recombination center with a deep level trap in GaN

E. Fitzgerald, S. Chua, S. Ringel, 2015 .

Traps in germanium nanocrystal memory and effect on charge retention : Modeling and experimental measurements

Dimitri A. Antoniadis, Eugene A. Fitzgerald, Wai Kin Chim, 2005 .

Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

E. Fitzgerald, S. Ringel, C. L. Andre, 2006, IEEE Electron Device Letters.

Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

M. Lee, E. Fitzgerald, 2004 .

Yellow-green emission for ETS-LEDs and lasers based on a strained-InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer

Eugene A. Fitzgerald, Lisa McGill, E. Fitzgerald, 2002 .

Anisotropy of the thermal conductivity in GaAs/AlAs superlattices.

K. Nelson, E. Fitzgerald, M. Bulsara, 2013, Nano letters.

Epitaxial growth of metastable SnGe alloys

A. Kortan, E. Fitzgerald, M. Asom, 1989 .

Low-threshold optically pumped lasing in highly strained germanium nanowires

K. Saraswat, C. S. Tan, E. Fitzgerald, 2017, Nature Communications.

Spontaneous Lateral Phase Separation of AlInP During Thin Film Growth and its Effect on Luminescence

E. Fitzgerald, T. Buonassisi, A. Norman, 2015 .

Arrayed Si ∕ SiGe Nanowire and Heterostructure Formations via Au-Assisted Wet Chemical Etching Method

W. K. Choi, D. Antoniadis, E. Fitzgerald, 2009 .

Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

E. Fitzgerald, D. Monroe, Yahong Xie, 1993 .

Analysis of double stub tuner control stability in a many element phased array antenna with strong cross-coupling

S. J. Wukitch, D. R. Terry, P. Koert, 2014 .

Scanning tunneling microscopy study of cleaning procedures for SiGe(001) surfaces

E. Fitzgerald, Yahong Xie, J. Pelz, 1995 .

Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates

S. M. Ting, Eugene A. Fitzgerald, E. Fitzgerald, 2000 .

Growth of strained Si and strained Ge heterostructures on relaxed Si1−xGex by ultrahigh vacuum chemical vapor deposition

M. Lee, E. Fitzgerald, A. Pitera, 2004 .

Kinetic Monte Carlo simulation of quantum dot growth on stepped substrates

E. Fitzgerald, S. Yoon, Y. Y. Liang, 2013 .

The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200 mm GaAs virtual substrate

Soon Fatt Yoon, Chuan Seng Tan, Eugene A. Fitzgerald, 2015 .

The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate

C. S. Tan, E. Fitzgerald, K. Lee, 2015 .

Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

Steven A. Ringel, S. M. Ting, R. M. Sieg, 1998 .

High quality In0.48Ga0.52P grown by gas source molecular beam epitaxy

E. Fitzgerald, J. Kuo, 1992 .

Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Kah Pin Chen, C. L. Dohrman, E. Fitzgerald, 2009 .

Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates

M. Lee, E. Fitzgerald, S. Ringel, 2005 .

Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

J. Boeckl, M. Lee, E. Fitzgerald, 2004 .

Dislocation dynamics in relaxed graded composition semiconductors

Mayank T. Bulsara, Andrew Y. Kim, Thomas A. Langdo, 1999 .

The effect of nitrogen pressure during molecular beam epitaxy growth of InAsN quantum dots

E. Fitzgerald, S. Yoon, K. Tan, 2008, Nanotechnology.

Positive temperature coefficient of impact ionization in strained-Si

J.A. del Alamo, N. Waldron, J. D. del Alamo, 2005, IEEE Transactions on Electron Devices.

Impact ionization in strained-Si/SiGe heterostructures

J.A. del Alamo, N. Waldron, J. D. del Alamo, 2003, IEEE International Electron Devices Meeting 2003.

Strained-Silicon on Silicon and Strained-Silicon on Silicon-Germanium on Silicon by Relaxed Buffer Bonding

Thomas A. Langdo, Eugene A. Fitzgerald, Gianni Taraschi, 2006 .

Engineered Substrates for Electronic and Optoelectronic Systems

E. Fitzgerald, 2005 .

LETTER TO THE EDITOR: Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)

D. Antoniadis, M. Lee, E. Fitzgerald, 2004 .

Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface

D. Antoniadis, E. Fitzgerald, J. Hoyt, 2004, IEEE Electron Device Letters.

Thermal conductivity of GaAs/Ge nanostructures

E. Fitzgerald, Gang Chen, Lingping Zeng, 2016, 1610.02102.

Strain relaxation in graded InGaN'GaN epilayers grown on sapphire

Peng Chen, Soo Jin Chua, E. A. Fitzgerald, 2003 .

Amber-green light-emitting diodes using order-disorder AlxIn1-xP heterostructures

E. Fitzgerald, A. Mascarenhas, K. Mukherjee, 2013 .

Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1−x]P heterostructures

E. Fitzgerald, A. Mascarenhas, K. Mukherjee, 2013 .

Direct-Gap 2.1–2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers

E. Fitzgerald, M. Vaisman, M. Lee, 2015, IEEE Journal of Photovoltaics.

Direct-gap 2.1–2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers

E. Fitzgerald, M. Vaisman, M. Lee, 2016, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes

E. Fitzgerald, J. W. Wu, L. McGill, 2004 .

Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking

Chuan Seng Tan, David Kohen, Shuyu Bao, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

Effect of Oxygen on Ni-Silicided FUSI Metal Gate

W. K. Choi, D. Chi, D. Antoniadis, 2006 .

Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate

C. L. Dohrman, E. Fitzgerald, C. Tung, 2009 .

Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

Jurgen Michel, Lionel C. Kimerling, Eugene A. Fitzgerald, 1991 .

Detailed Characterization for TCAD Simulations of GaAs 0.76 P 0.24 /Si 1-y Ge y /Si Single Junction Solar Cells

E. Fitzgerald, S. Hadi, A. Nayfeh, 2017 .

Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell

E. Fitzgerald, S. Hadi, A. Nayfeh, 2016, 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).

Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell

E. Fitzgerald, S. Hadi, A. Nayfeh, 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).

High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Steven A. Ringel, S. M. Ting, Thomas A. Langdo, 1998 .

Unifying first-principles theoretical predictions and experimental measurements of size effects in thermal transport in SiGe alloys

K. Nelson, E. Fitzgerald, Gang Chen, 2017, 1704.01386.

Columnar Structure Growth by Silicon Molecular Beam Epitaxy

E. Fitzgerald, Yahong Xie, J. Michel, 1991 .

Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

C. L. Dohrman, E. Fitzgerald, S. Yoon, 2008 .

Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates

Steven A. Ringel, S. M. Ting, Thomas A. Langdo, 1998 .

Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1−x buffer layers

Rajeev J. Ram, Rajeev J Ram, Eugene A. Fitzgerald, 2003 .

Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

Mayank T. Bulsara, S. M. Ting, Vicky Yang, 2003 .

Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy

Steven A. Ringel, O. Kwon, Eugene A. Fitzgerald, 2006 .

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2021, Journal of Semiconductors.

Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

W. K. Choi, D. Chi, D. Antoniadis, 2005 .

Highly oriented Ni(Pd)SiGe formation at 400 °C

W. K. Choi, D. Antoniadis, M. Lee, 2005 .

Structural, electronic, and luminescence investigation of strain‐relaxation induced electrical conductivity type conversion in GeSi/Si heterostructures

E. Fitzgerald, S. Ringel, J. Michel, 1996 .

Effect of composition on deep levels in heteroepitaxial GexSi1−x layers and evidence for dominant intrinsic recombination-Generation in relaxed ge layers on Si

E. Fitzgerald, S. Ringel, P. Grillot, 1996 .

Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x

Dimitri A. Antoniadis, Christopher W. Leitz, Eugene A. Fitzgerald, 2001 .

Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

Kin Leong Pey, D. A. Antoniadis, Eugene A. Fitzgerald, 2006 .

Suppression of oxidation in nickel germanosilicides by Pt incorporation

W. K. Choi, D. Chi, D. Antoniadis, 2005 .

The Effect of an Yttrium Interlayer on a Ni Germanided Metal Gate Workfunction in $\hbox{SiO}_{2}/\hbox{HfO}_{2}$

M. K. Dawood, W. K. Choi, D. Chi, 2007, IEEE Electron Device Letters.

Evaluation of erbium‐doped silicon for optoelectronic applications

Eugene A. Fitzgerald, Ya-Hong Xie, E. Fitzgerald, 1991 .

Stable cyclic performance of nickel oxide–carbon composite anode for lithium-ion batteries

E. Fitzgerald, K. Pey, Qing Zhang, 2014 .

Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDs.

Juejun Hu, Jurgen Michel, Li Yang, 2011, Optics express.

Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDs Citation

X. Sheng, E. Fitzgerald, J. Michel, 2011 .

Determination of the Direct to Indirect Bandgap Transition Composition in AlxIn1-xP

E. Fitzgerald, A. Mascarenhas, K. Mukherjee, 2013 .

Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates

C. Thompson, E. Fitzgerald, S. Boles, 2009 .

Epitaxially stabilized GexSn1−x diamond cubic alloys

A. Kortan, E. Fitzgerald, B. Weir, 1991 .

Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition

Eugene A. Fitzgerald, M. Lee, E. Fitzgerald, 2008 .

The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures

E. A. Fitzgerald, E. Fitzgerald, 1989 .

Growth and characterization of GaAsP top cells for high efficiency III–V/Si tandem PV

E. Fitzgerald, M. Bulsara, S. Hadi, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces

E. Fitzgerald, M. Bulsara, Tim Milakovich, 2013 .

Monolithically integrated thin film III-V/Si solar panel on wafer for active power management

E. Fitzgerald, J. Hennessy, S. Ringel, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

High gain AlGaAs∕GaAs heterojunction bipolar transistor fabricated on SiGe∕Si substrate

C. L. Dohrman, E. Fitzgerald, S. Yoon, 2007 .

Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates

E. A. Fitzgerald, G. Taraschi, C. W. Leitz, 2002 .

Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

W. K. Choi, D. Antoniadis, E. Fitzgerald, 2003 .

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Chuan Seng Tan, Eugene A. Fitzgerald, C. S. Tan, 2013, Journal of Electronic Materials.

III-V/Si dual junction solar cell at scale: Manufacturing cost estimates for step-cell based technology

Sabina Abdul Hadi, Eugene A. Fitzgerald, Ammar Nayfeh, 2018 .

Spontaneous patterning in high temperature superconducting film by liquid‐gas‐solidification processing

E. Fitzgerald, K. K. Wang, H. Chen, 1994 .

Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth

Soo Jin Chua, Chew Beng Soh, Eugene A. Fitzgerald, 2007 .

Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy

C. L. Dohrman, E. Fitzgerald, C. Tung, 2006 .

Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers

E. Fitzgerald, K. Lee, K. Lee, 2017 .

Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS

C. S. Tan, E. Fitzgerald, S. Chua, 2017 .

Transport in High-Mobility Si 1−x Ge x Heterostructures Grown by Molecular-Beam Epitaxy

E. Fitzgerald, D. Monroe, Yahong Xie, 1992 .

Strain-Free Ge x Si 1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates

Martin L. Green, L. Feldman, A. Kortan, 1991 .

Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures

L. Feldman, E. Fitzgerald, B. Weir, 1991 .

Dislocation glide and blocking kinetics in compositionally graded SiGe/Si

J. Lai, E. Fitzgerald, M. Bulsara, 2001 .

Range of defect morphologies on GaAs grown on offcut (001) Ge substrates

E. Fitzgerald, S. Ting, R. Sieg, 1998 .

Fabrication of ultra-thin strained silicon on insulator

R. Hull, N. Klymko, J. Li, 2003 .

Novel GaAs0.71P0.29/Si tandem step-cell design

E. Fitzgerald, M. Bulsara, J. Hoyt, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

Andrew M. Carlin, M. González, E. Fitzgerald, 2010 .

1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge

Kah Pin Chen, Andrew M. Carlin, E. Fitzgerald, 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

High-quality metamorphic compositionally graded InGaAs buffers

Eugene A. Fitzgerald, E. Fitzgerald, K. Lee, 2010 .

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

Steven A. Ringel, Mayank T. Bulsara, B. M. Keyes, 2000 .

Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x

D. Antoniadis, E. Fitzgerald, Shaofeng Yu, 2003, IEEE Electron Device Letters.

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

Dimitri A. Antoniadis, Christopher W. Leitz, Eugene A. Fitzgerald, 2002 .

Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

E. Fitzgerald, M. Currie, V. Yang, 2003 .

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice

K. Nelson, E. Fitzgerald, M. Bulsara, 2012, 1210.1254.

Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy

E. Fitzgerald, M. Bulsara, V. Yang, 1998 .

Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructures

E. Fitzgerald, D. Monroe, Yahong Xie, 1993 .

Heavy p-type carbon doping of MOCVD GaAsP using CBrCl 3

E. Fitzgerald, C. Heidelberger, 2016 .

Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering

E. Fitzgerald, G. Bauer, V. Holý, 1995 .

Hybrid Process Design Kit: Single-Chip Monolithic III-V/Si Cascode GaN-HEMT

S. B. Chiah, D. Antoniadis, E. Fitzgerald, 2018 .

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors

E. Fitzgerald, Cheng‐Wei Cheng, 2008 .

Final results from the MISSE5 GaAs on Si solar cell experiment

Steven A. Ringel, Phillip P. Jenkins, David M. Wilt, 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.

Design and fabrication of subwavelength nanogratings based light-emitting diodes

Jinghua Teng, Soo Jin Chua, Eugene A. Fitzgerald, 2011 .

Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes

C. L. Dohrman, E. Fitzgerald, S. Yoon, 2008 .

The Limits of Electromechanical Coupling in Highly-Tensile Strained Germanium.

E. Fitzgerald, S. Boles, I. Choi, 2020, Nano letters.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Kenneth Eng Kian Lee, Soon Fatt Yoon, Chuan Seng Tan, 2017, OPTO.

Epitaxy and wafer bonding of AlGalnP multiple-quantum wells and light-emitting diodes on 8″ Si substrates

C. S. Tan, E. Fitzgerald, J. Michel, 2016, 2016 IEEE Photonics Conference (IPC).

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Chuan Seng Tan, Eugene A. Fitzgerald, Li Zhang, 2016 .

Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Soon Fatt Yoon, Bing Wang, Jurgen Michel, 2016 .

Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

Kenneth Eng Kian Lee, Soon Fatt Yoon, Chuan Seng Tan, 2016, SPIE OPTO.

Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1−xGex/Si substrate

C. L. Dohrman, E. Fitzgerald, S. Yoon, 2009 .

Effects of Dislocation Strain on the Epitaxy of Lattice-Mismatched AlGaInP Layers

E. Fitzgerald, M. Bulsara, A. Mascarenhas, 2014 .

Growth of single crystal ZnO nanorods on GaN using an aqueous solution method

C. Thompson, E. Fitzgerald, S. Chua, 2005 .

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Soo Jin Chua, Peng Chen, Eugene A. Fitzgerald, 2005 .

Structural and optical properties of stacked self-assembled InAs∕InGaAs quantum dots on graded Si1−xGex∕Si substrate

Carl L. Dohrman, Soon Fatt Yoon, Eugene A. Fitzgerald, 2008 .

Relaxed Silicon-Germanium on Insulator (SGOI)

D. Antoniadis, M. Lee, E. Fitzgerald, 2001 .

Multilayer antireflection coating design for GaAs0.69P0.31/Si dual-junction solar cells

Sabina Abdul Hadi, Marcus S. Dahlem, Eugene A. Fitzgerald, 2015 .

Fabrication and characterization of nano‐porous GaN template for strain relaxed GaN growth

E. Fitzgerald, S. Chua, H. Hartono, 2007 .

Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates

A. Khan, M. González, M. Hudait, 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..

Scanning force microscopy studies of GaAs films grown on offcut Ge substrates

E. Fitzgerald, S. Ting, R. Sieg, 1998 .

Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix

E. Fitzgerald, W. Chim, Y. Foo, 2007 .

Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates

C. D. Lee, W. K. Liu, D. Lubyshev, 2010 .

A Fully Integrated Class-J GaN MMIC Power Amplifier for 5-GHz WLAN 802.11ax Application

Chirn Chye Boon, Pilsoon Choi, Mengda Mao, 2018, IEEE Microwave and Wireless Components Letters.

A Novel 2.6–6.4 GHz Highly Integrated Broadband GaN Power Amplifier

Pilsoon Choi, Mengda Mao, Eugene A. Fitzgerald, 2017, IEEE Microwave and Wireless Components Letters.

GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

E. Fitzgerald, C. Heidelberger, 2018 .

Monolithically Integrated III-V and Si CMOS Devices on Silicon on Lattice Engineered Substrates (SOLES)

J. Fastenau, W. K. Liu, D. Lubyshev, 2009 .

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

C. S. Tan, E. Fitzgerald, K. Lee, 2018, AIP Advances.

(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design

G. Ng, L. Peh, C. S. Tan, 2016 .

Integration of III–V materials and Si-CMOS through double layer transfer process

Chuan Seng Tan, Shuyu Bao, C. S. Tan, 2014, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).

Optical antenna enhanced spontaneous emission rate in electrically injected nanoscale III–V LED

Ming C. Wu, S. Fortuna, E. Fitzgerald, 2016, 2016 International Semiconductor Laser Conference (ISLC).

Conduction band discontinuity and electron confinement at the SixGe1−x/Ge interface

E. Fitzgerald, E. Yablonovitch, G. Mazzeo, 2010 .

Silicon-Germanium multi-quantum well photodetectors in the near infrared.

C. Burrus, K. Saraswat, J. Chen, 2012, Optics express.

Defect and temperature dependence of tunneling in InGaAs/GaAsSb heterojunctions with varying band alignments

E. Fitzgerald, C. Heidelberger, Ryan M. Iutzi, 2015, 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S).

Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions

E. Fitzgerald, Ryan M. Iutzi, 2015, 1503.02763.

In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application

C. S. Tan, E. Fitzgerald, K. Lee, 2022, Materials Science in Semiconductor Processing.

Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

C. S. Tan, E. Fitzgerald, K. Lee, 2013 .

Near‐field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−x films

E. Fitzgerald, J. Hsu, P. Silverman, 1994 .

Fabrication of GaAs-on-Insulator via Low Temperature Wafer Bonding and Sacrificial Etching of Ge by XeF2

E. Fitzgerald, M. Bulsara, G. Cole, 2011 .

Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]

C. Thompson, E. Fitzgerald, S. Chua, 2010 .

Controlled misfit dislocation nucleation in Si0.90Ge0.10 epitaxial layers grown on Si

E. Fitzgerald, Yahong Xie, K. Short, 1993 .

Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission

E. Fitzgerald, C. Ngo, Y. Y. Liang, 2012 .

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

E. Fitzgerald, M. Bulsara, A. Jandl, 2014 .

Integration of Si-CMOS and III-V materials through multi-wafer stacking

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference.

Integration of 200 mm Si-CMOS and III-V materials through wafer bonding

C. S. Tan, E. Fitzgerald, K. Lee, 2017, 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).

Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms

S. B. Chiah, E. Fitzgerald, Xing Zhou, 2020, 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).

Optical activation of Eu ions in nanoporous GaN films

E. Fitzgerald, S. Chua, B. Foo, 2006 .

Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes

E. Fitzgerald, K. Pey, Qing Zhang, 2014 .

AlN-AlN Layer Bonding and Its Thermal Characteristics

Chuan Seng Tan, Gang Yih Chong, S. Bao, 2014 .

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

C. S. Tan, E. Fitzgerald, K. Lee, 2018 .

Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

E. Fitzgerald, M. Bulsara, Tim Milakovich, 2014 .

Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys

Judy L. Hoyt, Christopher W. Leitz, Eugene A. Fitzgerald, 2002 .