S. Lodha

A. Nainani, S. Lodha, C. Hatem, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Ge n+/p junctions using temperature-based phosphorous implantation

S. Lodha, A. Misra, J. Biswas, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Low-Frequency Noise in Supported and Suspended MoS2 Transistors

S. Lodha, Sayantani Ghosh, N. Kaushik, 2018, IEEE Transactions on Electron Devices.

Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation

A. Nainani, S. Lodha, S. Kothari, 2013 .

Fabrication and electrical characterization of Au/molecule/GaAs devices

S. Lodha, D. Janes, 2004, 4th IEEE Conference on Nanotechnology, 2004..

Charge trap layer enabled positive tunable Vfb in β-Ga2O3 gate stacks for enhancement mode transistors

S. Lodha, D. Biswas, Chandan Joishi, 2020, 2005.05237.

Enhanced n-type β-Ga2O3 ( 2 ¯ 01 ) gate stack performance using Al2O3/SiO2 bi-layer dielectric

S. Lodha, S. Rajan, D. Biswas, 2019, Applied Physics Letters.

Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs

S. Lodha, D. Janes, N. Chen, 2002 .

Fully/partially suspended gate SiC-based FET for power applications

S. Lodha, S. Nayak, S. Ganguly, 2021, 2021 IEEE Latin America Electron Devices Conference (LAEDC).

Selective Oxidation of WS2 Defect Domain with Sub‐Monolayer Thickness Leads to Multifold Enhancement in Photoluminescence

S. Lodha, V. Balakrishnan, A. Soni, 2019, Advanced Materials Interfaces.

Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field-Effect Transistors

S. Lodha, N. C. Verma, C. K. Nandi, 2020 .

Effect of interface trap distribution on SiC-based power MOS device and circuit characteristics

S. Lodha, S. Nayak, S. Ganguly, 2020, 2020 International Semiconductor Conference (CAS).

Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

S. Lodha, S. Rajan, S. Krishnamoorthy, 2018, IEEE Electron Device Letters.

Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer

S. Lodha, Sayantani Ghosh, D. Biswas, 2017 .

Performance Evaluation of Passivated Silicon Carrier-Selective Contact Solar Cell

S. Lodha, K. Ghosh, A. Kottantharayil, 2018, IEEE Transactions on Electron Devices.

Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

S. Lodha, V. Rao, M. Neumann-Spallart, 2014 .

Effect of contact properties on current transport in metal/molecule/GaAs devices

S. Lodha, D. Janes, P. Carpenter, 2006 .

Wavelength‐Controlled Photocurrent Polarity Switching in BP‐MoS2 Heterostructure

S. Lodha, Sayantani Ghosh, N. Medhekar, 2021, Advanced Functional Materials.

Suspended ReSi FET for improved photocurrent-time response

S. Lodha, B. Mukherjee, N. Kaushik, 2017, 2017 75th Annual Device Research Conference (DRC).

A Bulk Planar SiGe Quantum-Well Based ZRAM with Low Vt Variability

S. Lodha, S. Dutta, U. Ganguly, 2015, 2015 IEEE International Memory Workshop (IMW).

Exclusive T2 MRI contrast enhancement by mesoporous carbon framework encapsulated manganese oxide nanoparticles

S. Lodha, Dinesh Kumar, A. Guleria, 2020 .

Ju n 20 04 A Device Structure for Electronic Transport Through Individual Molecules with Strong Coupling to Metallic Electrodes

S. Lodha, Subhasis Ghosh, Henny Halimun, 2022 .

Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation.

S. Lodha, N. Kaushik, Natasha Goyal, 2018, Nanoscale.

P-type doping of MoS2 with phosphorus using a plasma immersion ion implantation (PIII) process

S. Lodha, Ankur Nipane, D. Karmakar, 2015, 2015 73rd Annual Device Research Conference (DRC).

Mesoporous 3D carbon framework encapsulated manganese oxide nanoparticles as biocompatible T1 MR imaging probe

S. Lodha, Dinesh Kumar, A. Guleria, 2018 .

Nickel germanide with rare earth interlayers for Ge CMOS applications

A. Nainani, S. Lodha, S. Ganguly, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

Process Variation-Induced Contact Resistivity Variability in Nanoscale MS and MIS Contacts

S. Lodha, S. Dev, 2019, IEEE Transactions on Electron Devices.

Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium

S. Lodha, S. Ganguly, S. Kothari, 2018 .

Performance Analysis of Silicon Carrier Selective Contact Solar Cells With ALD MoOx as Hole Selective Layer

S. Lodha, K. Ghosh, A. Kottantharayil, 2021, Silicon.

An Analytical Model for the Electrical Characteristics of Passivated Carrier- Selective Contact (CSC) Solar Cell

S. Lodha, K. Ghosh, A. Kottantharayil, 2019, IEEE Transactions on Electron Devices.

Device structure for electronic transport through individual molecules using nanoelectrodes

S. Lodha, D. Janes, Subhasis Ghosh, 2004, cond-mat/0406688.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Jared M. Johnson, S. Lodha, S. Rajan, 2017, 1706.09492.

Janus nanoparticles for contrast enhancement of T1-T2 dual mode magnetic resonance imaging.

S. Lodha, Dinesh Kumar, A. Guleria, 2019, Dalton transactions.

Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers

P. P. Manik, S. Lodha, 2015 .

Thin EOT MoS2 FET for Efficient Photodetection and Gas Sensing

S. Lodha, Sayantani Ghosh, Kartikey Thakar, 2018, 2018 4th IEEE International Conference on Emerging Electronics (ICEE).

Calibration of the density-gradient TCAD model for germanium FinFETs

S. Lodha, S. Ganguly, U. Ganguly, 2013, RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics.

Electrostatic Engineering of β-Ga2O3 Trench Metal–Insulator–Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack

S. Lodha, Chandan Joishi, Ravikiran Lengare, 2022, IEEE Transactions on Electron Devices.

Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

S. Lodha, S. Ringel, S. Rajan, 2019, IEEE Electron Device Letters.

Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors

S. Lodha, S. Ringel, S. Rajan, 2018, Applied Physics Letters.

Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs

S. Lodha, S. Ringel, S. Rajan, 2019, Applied Physics Letters.

Nanomechanical resonators fabricated by atomic layer deposition on suspended 2D materials

S. Lodha, Han-qing Liu, P. Steeneken, 2022, 2D Materials.

High performance triangular barrier engineered NIPIN selector for bipolar RRAM

S. Lodha, J. Schulze, U. Ganguly, 2014, 2014 IEEE 6th International Memory Workshop (IMW).

Design of epitaxial Si punch-through diode based selector for high density bipolar RRAM

S. Lodha, V. Srinivasan, U. Ganguly, 2012, 2012 International Conference on Emerging Electronics.

All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe2/MoS2 pn Heterodiode.

S. Lodha, Sayantani Ghosh, D. Karmakar, 2021, ACS applied materials & interfaces.

Optoelectronic and photonic devices based on transition metal dichalcogenides

S. Lodha, Kartikey Thakar, 2020, Materials Research Express.

Thickness tunable transport in alloyed WSSe field effect transistors

S. Lodha, D. Late, Deepa S. Narang, 2016 .

Silicon carbide planar junctionless transistor for low-medium voltage power electronics

S. Lodha, S. Nayak, S. Ganguly, 2021 .

Impact of N2 Coimplant on Phosphorus Diffusion and Activation for n+/p Ge Junctions

S. Lodha, N. Variam, N. Pradhan, 2020, IEEE Transactions on Electron Devices.

Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

P. P. Manik, S. Lodha, Y. Rawal, 2016 .

Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

P. P. Manik, A. Nainani, S. Lodha, 2012 .

Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

S. Lodha, Ankur Nipane, D. Karmakar, 2016, ACS nano.

Characterization of gold contacts in GaAs-based molecular devices: Relating structure to electrical properties

S. Lodha, D. Janes, A. Walker, 2009 .

Near-direct bandgap WSe2/ReS2 type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics.

S. Lodha, Sayantani Ghosh, D. Saha, 2019, Nano letters.

Ultra-low power neuromorphic obstacle detection using a two-dimensional materials-based subthreshold transistor

S. Lodha, B. Rajendran, Kartikey Thakar, 2023, npj 2D Materials and Applications.

High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors

J. Jopling, J. Neirynck, H. Deshpande, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity.

S. Lodha, Sayantani Ghosh, N. Medhekar, 2022, ACS nano.

Multi-Bit Analog Transmission Enabled by Electrostatically Reconfigurable Ambipolar and Anti-Ambipolar Transport.

S. Lodha, Kartikey Thakar, 2021, ACS nano.

Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

S. Lodha, Sayantani Ghosh, Kartikey Thakar, 2021, Nature Communications.

Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

Saurabh Lodha, Siddharth Rajan, Hongping Zhao, 2018 .

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

Saurabh Lodha, Siddharth Rajan, Yuewei Zhang, 2018, Applied Physics Letters.

Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy

S. Lodha, Krista R. Khiangte, S. Dev, 2020, Journal of Physics D: Applied Physics.

Reversible hysteresis inversion in MoS2 field effect transistors

S. Lodha, P. Bøggild, D. H. Petersen, 2017, npj 2D Materials and Applications.

Schottky barrier heights for Au and Pd contacts to MoS2

S. Lodha, M. Deshmukh, Ankur Nipane, 2014 .

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

S. Lodha, N. Medhekar, P. Sharma, 2023, 2304.13154.

Solution-processed poly(3,4-ethylenedioxythiophene) thin films as transparent conductors: effect of p-toluenesulfonic acid in dimethyl sulfoxide.

S. Lodha, Anilesh Kumar, B. Saha, 2014, ACS applied materials & interfaces.

Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme

Udayan Ganguly, Souvik Mahapatra, Saurabh Lodha, 2013 .

Enhanced photoresponse of a dielectric-free suspended WSe2–ReS2 heterostructure photodetector

S. Lodha, Abin Varghese, Himani Jawa, 2023, Applied Physics Letters.

Phase engineering of seamless heterophase homojunctions with co-existing 3R and 2H phases in WS2 monolayers.

S. Lodha, N. C. Verma, C. K. Nandi, 2018, Nanoscale.

ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts

A. Nainani, S. Lodha, S. Gupta, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Statistical Simulation Study of Metal Grain-Orientation-Induced MS and MIS Contact Resistivity Variability for 7-nm FinFETs

S. Lodha, P. Harsha Vardhan, S. Dev, 2018, IEEE Transactions on Electron Devices.

High Performance 400 °C p+/n Ge Junctions Using Cryogenic Boron Implantation

A. Nainani, S. Lodha, C. Hatem, 2014, IEEE Electron Device Letters.

Evaluating Au and Pd contacts in mono and multilayer MoS2 transistors

S. Lodha, M. Deshmukh, Ankur Nipane, 2014, 72nd Device Research Conference.

Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2.

S. Lodha, Ankur Nipane, D. Karmakar, 2016, ACS applied materials & interfaces.

WSe2/ReS2 vdW Heterostructure for Versatile Optoelectronic Applications

Saurabh Lodha, Kartikey Thakar, Abin Varghese, 2018, 2018 76th Device Research Conference (DRC).

On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations

R. Mandapati, A. Borkar, V. S. S. Srinivasan, 2013, IEEE Transactions on Nanotechnology.

Comparison of novel punch-through diode (NPN) selector with MIM selector for bipolar RRAM

R. Mandapati, A. Borkar, S. Lodha, 2013, 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings.

The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance

Udayan Ganguly, Saurabh Lodha, Raju Mandapati, 2013, IEEE Transactions on Electron Devices.

On pairing bipolar RRAM memory element with novel punch-through diode based selector: Compact modeling to array performance

S. Lodha, V. Srinivasan, U. Ganguly, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

Nanotechnology: An Applied and Robust Approach for Forensic Investigation

An, Ritesh K Shukla, ya, 2016 .

First-principles based simulations of electronic transmission in ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterointerfaces

S. Lodha, D. Saha, 2021, Scientific Reports.

Near‐Infrared and Visible‐Range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures

S. Lodha, Mingchao Wang, N. Medhekar, 2021, Advanced Materials Interfaces.

Modeling Charge Control in Heterostructure Nanoscale Transistors

Udayan Ganguly, Saurabh Lodha, Saurabh Sant, 2014 .

Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate

S. Lodha, S. Ringel, S. Rajan, 2018, IEEE Electron Device Letters.

Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation

S. Lodha, S. Rajan, R. Myers, 2020, IEEE Transactions on Electron Devices.

Accurate Threshold Voltage Reliability Evaluation of Thin Al2O3 Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses.

S. Lodha, S. Mahapatra, N. Parihar, 2019, ACS applied materials & interfaces.

Temperature and field dependent low frequency noise characterization of Ge n-FETs

S. Lodha, Sayantani Ghosh, Y. Tiwari, 2016 .

Enhanced thermally aided memory performance using few-layer ReS 2 transistors

S. Lodha, D. H. Petersen, D. Mackenzie, 2020, Applied Physics Letters.

Metal/molecule/p-type GaAs heterostructure devices

S. Lodha, D. Janes, 2006 .

Electrical-Equivalent van der Waals Gap for Two-Dimensional Bilayers

S. Lodha, S. Ganguly, Dhirendra Vaidya, 2018, Physical Review Applied.

Ab-initio study of NiGe/Ge Schottky contact

S. Lodha, S. Ganguly, Dhirendra Vaidya, 2017 .

Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS$_2$ FETs

S. Lodha, Abin Varghese, Himani Jawa, 2020, 2005.07106.

Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

S. Lodha, Ankur Nipane, D. Karmakar, 2016, ACS nano.

Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3 IL

S. Lodha, Sayantani Ghosh, S. Mahapatra, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Hybrid gate dielectric with Si3N4 stressor for LDMOSFET

S. Lodha, S. Nayak, S. Ganguly, 2021, 2021 IEEE Latin America Electron Devices Conference (LAEDC).

Enhanced current densities in Au/molecule/GaAs devices

David B. Janes, Saurabh Lodha, S. Lodha, 2004 .

Ultrafast Characterization of Hole Trapping Near Black Phosphorus–SiO2 Interface During NBTI Stress in 2-D BP p-FETs

S. Lodha, S. Mahapatra, Natasha Goyal, 2019, IEEE Transactions on Electron Devices.

Integrative Modulation of Magnetic Resonance Transverse and Longitudinal Relaxivity in a Cell-Viable Bimagnetic Ensemble, γ-Fe2O3@ZnFe2O4.

S. Lodha, P. Deb, Anamika Chaturvedi, 2024, Langmuir : the ACS journal of surfaces and colloids.

Ni1–xZnxFe2O4@CoO (x = 0.25 and 0.50) Nanoparticles for Magnetic Resonance Imaging

P. Ajayan, S. Lodha, P. Deb, 2023, ACS Applied Nano Materials.