K. Uchida

发表

Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs

Y. Nishi, P. McIntyre, K. Uchida, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

K. Saraswat, Y. Nishi, T. Krishnamohan, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)

K. Saraswat, Y. Nishi, T. Krishnamohan, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

T. Numata, S. Takagi, K. Uchida, 2002, Digest. International Electron Devices Meeting,.

Short-Channel Performance Improvement by Raised Source/Drain Extensions With Thin Spacers in Trigate Silicon Nanowire MOSFETs

T. Numata, K. Uchida, M. Saitoh, 2011, IEEE Electron Device Letters.

SPICE-Based Performance Analysis of Trigate Silicon Nanowire CMOS Circuits

T. Numata, K. Uchida, M. Saitoh, 2013, IEEE Transactions on Electron Devices.

Spice-based performance analysis of ultra-low voltage Si nanowire CMOS circuits

Masumi Saitoh, Ken Uchida, Kensuke Ota, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

Scaling Analysis of Nanoelectromechanical Memory Devices

Ken Uchida, Hiroshi Mizuta, Shunri Oda, 2010 .

Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits

K. Matsuzawa, S. Takagi, K. Uchida, 2000 .

Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

T. Numata, S. Takagi, K. Uchida, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) transistors to carbon nanotube FETs and beyond

K. Uchida, M. Saitoh, S. Kobayashi, 2008, 2008 IEEE International Electron Devices Meeting.

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors

S. Takagi, K. Uchida, 2003 .

Experimental Study on Deformation Potential ( ${D}_{{{ac}}}$ ) in MOSFETs: Demonstration of Increased ${D}_{{{ac}}}$ at MOS Interfaces and Its Impact on Electron Mobility

K. Uchida, S. Oda, T. Ohashi, 2016, IEEE Journal of the Electron Devices Society.

Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs

K. Uchida, S. Oda, T. Ohashi, 2011, 2011 International Electron Devices Meeting.

Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors

S. Takagi, K. Uchida, J. Koga, 2007 .

A unified simulation of Schottky and ohmic contacts

K. Matsuzawa, K. Uchida, A. Nishiyama, 2000 .

Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

M. Saitoh, K. Uchida, K. Uchida, 2008, 2008 Symposium on VLSI Technology.

High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments

Y. Nishi, K. Uchida, Z. Krivokapic, 2006, IEEE Transactions on Electron Devices.

Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

T. Numata, K. Uchida, C. Tanaka, 2013 .

Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

K. Uchida, Y. Inoue, Tsunaki Takahashi, 2016, IEEE Journal of the Electron Devices Society.

Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching

K. Uchida, S. Oda, T. Kodera, 2011 .

Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure

K. Uchida, H. Mizuta, S. Oda, 2009 .

Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system

M. Brandt, K. Uchida, S. Oda, 2011 .

Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability

Nobuyasu Beppu, Kunro Chen, Ken Uchida, 2011, 2011 International Electron Devices Meeting.

Nanoscale Pt thin film sensor for accurate detection of ppm level hydrogen in air at high humidity

K. Uchida, Takahisa Tanaka, Tsunaki Takahashi, 2018 .

Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

Ken Uchida, Shunri Oda, Tetsuo Kodera, 2011 .

Understanding of short-channel mobility in tri-gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement

T. Numata, K. Uchida, M. Saitoh, 2010, 2010 International Electron Devices Meeting.

Nanoscale Thermal Management of Single SnO2 Nanowire: pico-Joule Energy Consumed Molecule Sensor

Gang Meng, Ken Uchida, Masaki Kanai, 2016 .

Low-Power and ppm-Level Multimolecule Detection by Integration of Self-Heated Metal Nanosheet Sensors

K. Uchida, T. Kuroda, H. Ishikuro, 2019, IEEE Transactions on Electron Devices.

Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

K. Uchida, Takahisa Tanaka, 2018 .

Interface-induced anomalous Nernst effect in Fe3O4/Pt-based heterostructures

K. Uchida, T. Kikkawa, M. Ibarra, 2018, Applied Physics Letters.

Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current

K. Uchida, B. P. Algul, 2012 .

Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

K. Uchida, S. Oda, T. Kodera, 2011 .

Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation

T. Numata, K. Uchida, M. Saitoh, 2008, 2008 IEEE International Electron Devices Meeting.

Evaluation of phonon confinement in ultrathin-film silicon-on-insulator by Raman spectroscopy

K. Uchida, A. Ogura, K. Nagata, 2014 .

Physical understanding of Vth and Idsat variations in (110) CMOSFETs

T. Numata, K. Uchida, M. Saitoh, 2006, 2009 Symposium on VLSI Technology.

Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films

K. Uchida, H. Mizuta, S. Oda, 2009 .

In situ AP-XPS analysis of a Pt thin-film sensor for highly sensitive H2 detection.

K. Uchida, H. Kondoh, Takahisa Tanaka, 2020, Chemical communications.

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

K. Uchida, S. Oda, T. Kodera, 2011 .

Modulation of VO2 Metal–Insulator Transition by Ferroelectric HfO2 Gate Insulator

K. Uchida, A. Toriumi, T. Nishimura, 2020, Advanced Electronic Materials.

Anomalous Nernst effect of Fe 3 O 4 single crystal

Ken Uchida, Eiji Saitoh, Luis Morellón, 2014 .

Programmable single-electron transistor logic for future low-power intelligent LSI: proposal and room-temperature operation

Ken Uchida, Akira Toriumi, Junji Koga, 2003 .

Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots

Ken Uchida, Hiroshi Mizuta, Shunri Oda, 2010 .

Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon

K. Uchida, S. Oda, Tsunaki Takahashi, 2010 .

The Effect of Side Traps on Ballistic Transistor in Kondo Regime

K. Uchida, S. Fujita, T. Tanamoto, 2006, cond-mat/0608011.

Electron transport through silicon serial triple quantum dots

K. Uchida, H. Mizuta, Y. Tsuchiya, 2009, ESSDERC 2009.

Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

Ken Uchida, Shunri Oda, Tsunaki Takahashi, 2011 .

Direct observation of subband structures in (110) PMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility

K. Uchida, S. Oda, T. Kodera, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots

K. Uchida, C. M. Marcus, T. Kodera, 2011, 1111.6873.

Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications

K. Uchida, S. Fujita, T. Tanamoto, 2002, Digest. International Electron Devices Meeting,.

Thermal conductivity of Si nanowires with δ-modulated dopant distribution by self-heated 3ω method and its length dependence

K. Uchida, N. Fukata, K. Nagashima, 2018, Journal of Applied Physics.

Modulation of thermoelectric power factor via radial dopant inhomogeneity in B-doped Si nanowires.

K. Uchida, Xiaomin Li, N. Fukata, 2014, Journal of the American Chemical Society.

Erratum: Theory of magnon-driven spin Seebeck effect [Phys. Rev. B 81 , 214418 (2010)]

Jiang Xiao, Eiji Saitoh, Sadamichi Maekawa, 2010 .

Numerical simulation study of electrostatically defined silicon double quantum dot device

K. Uchida, S. Oda, T. Kodera, 2011 .

Performance Improvement by Stress Memorization Technique in Trigate Silicon Nanowire MOSFETs

T. Numata, M. Saitoh, K. Ota, 2012, IEEE Electron Device Letters.

Key capacitive parameters for designing single-electron transistor charge sensors

K. Uchida, S. Oda, T. Kodera, 2012 .

Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

Shinichi Takagi, Ken Uchida, Kazuya Matsuzawa, 2000 .

Temperature dependence of resistivity increases induced by thiols adsorption in gold nanosheets

K. Uchida, Takahisa Tanaka, T. Yajima, 2021 .

Sub-band structure engineering for advanced CMOS channels

J. Koga, Tomohisa Mizuno, Shu Nakaharai, 2005 .

Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots

K. Uchida, S. Oda, T. Ishikawa, 2010 .

Experimental study on SET/RESET conditions for graphene resistive random access memory

K. Uchida, S. Oda, Tsunaki Takahashi, 2014 .

Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation

Ken Uchida, Hiroshi Mizuta, Shunri Oda, 2010 .

Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K

K. Uchida, H. Mizuta, S. Oda, 2009 .

Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots

Y. Tsuchiya, H. Mizuta, K. Uchida, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

Self-heating effects in nanoscale 3D MOSFETs

K. Uchida, Tsunaki Takahashi, 2016 .

Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires

Ken Uchida, Shunri Oda, Tsunaki Takahashi, 2013 .

Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 10(19) cm(-3).

K. Uchida, S. Oda, Takahisa Tanaka, 2016, Nano letters.

Impact of Gate Poly Depletion on Evaluation of Channel Temperature in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Four-Point Gate Resistance Measurement Method

Nobuyasu Beppu, Ken Uchida, Tsunaki Takahashi, 2012 .

Enhancement of Sensor Response in Graphene Gas Sensors by Gate-Induced Field

K. Uchida, Takahisa Tanaka, T. Yokoyama, 2018, IEEE Electron Device Letters.

Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions

K. Uchida, M. Saitoh, 2007 .

Pd-Functionalized, Suspended Graphene Nanosheet for Fast, Low-Energy Multimolecular Sensors

K. Uchida, Y. Saito, Takahisa Tanaka, 2018, ACS Applied Nano Materials.

Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs

T. Numata, K. Uchida, M. Saitoh, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and /spl delta/T/sub SOI/-induced scattering

Junji Koga, K. Uchida, S. Takagi, 2003, IEEE International Electron Devices Meeting 2003.

Short-channel performance and mobility analysis of <110>- and <100>-oriented tri-gate nanowire MOSFETs with raised source/drain extensions

T. Numata, K. Uchida, M. Saitoh, 2010, 2010 Symposium on VLSI Technology.

Performance, variability and reliability of silicon tri-gate nanowire MOSFETs

T. Numata, K. Uchida, K. Ota, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor

T. Numata, K. Uchida, M. Saitoh, 2012 .

High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

T. Numata, K. Uchida, M. Saitoh, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

J. Koga, K. Uchida, A. Kinoshita, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Carrier Transport in (110) nMOSFETs: Subband Structures, Non-Parabolicity, Mobility Characteristics, and Uniaxial Stress Engineering

M. Saitoh, K. Uchida, A. Kinoshita, 2006, 2006 International Electron Devices Meeting.

Universal Relationship between Low-Field Mobility and High-Field Carrier Velocity in High-K and SiO2 Gate Dielectric MOSFETs

K. Uchida, M. Saitoh, 2006, 2006 International Electron Devices Meeting.

Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors

K. Uchida, S. Oda, T. Ohashi, 2013 .

Monte Carlo Simulation of Sub-0.1 mum Devices with Schottky Contact Model

Ken Uchida, Kazuya Matsuzawa, Akira Nishiyama, 2000 .

Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistors

K. Uchida, Takahisa Tanaka, T. Yajima, 2020, Japanese Journal of Applied Physics.

Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 1018 × cm-3 and silicon-on-insulator thickness of less than 10 nm

K. Uchida, S. Oda, T. Ohashi, 2011 .

Comparison of self-heating effect (SHE) in short-channel bulk and ultra-thin BOX SOI MOSFETs: Impacts of doped well, ambient temperature, and SOI/BOX thicknesses on SHE

Ken Uchida, Takahiro Shinada, Yasuo Inoue, 2013, 2013 IEEE International Electron Devices Meeting.

Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors

Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, 2013 .

Numerical Study of $C$–$V$ Characteristics of Double-Gate Ultrathin SOI MOSFETs

K. Uchida, H. Watanabe, A. Kinoshita, 2007, IEEE Transactions on Electron Devices.

Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs

K. Uchida, R. Hasumi, J. Koga, 2006, 2006 International Electron Devices Meeting.