R. Jefferies

发表

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

G. Dewey, R. Pillarisetty, M. Radosavljevic, 2008, 2008 IEEE International Electron Devices Meeting.

85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

R. Chau, S. Datta, M. Doczy, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Analysis and measurement of the speed and linearity of silicon photodiodes for measuring short laser pulses

R. Jefferies, J. Edwards, 1973 .

MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

T. Ashley, R. Jefferies, J. Newey, 1996 .

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Suman Datta, Martin Trevor Emeny, T. J. Phillips, 2007 .

Response time of F 4000 biplanar photocell in various holders

R. Jefferies, J. Edwards, 1969 .

An automatic linearity tester for photodetectors

R. Jefferies, J. Edwards, 1970 .

Novel InSb-based quantum well transistors for ultra-high speed, low power logic applications

S. Datta, T. Ashley, A.R. Barnes, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Non-Equilibrium InSb/InAISb Diodes Grown by MBE

C. T. Elliott, T. Ashley, R. Jefferies, 1997 .

Mid-infrared In1−xAlxSb/InSb heterostructure diode lasers

M. Carroll, T. Ashley, C. T. Elliott, 1997 .

Mid-infrared InSb and InAlSb diode lasers

T. Ashley, Charles Thomas Elliott, C. T. Elliott, 1998 .

Indium Antimonide Based Technology for RF Applications

T. Ashley, L. Buckle, J. Powell, 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

An automated interferometer for Fourier transform spectroscopy at near-millimetre wavelengths

R. Jefferies, J. Birch, B. Hawker, 1984 .