M. Uren

W. A. Phillips, T. Martin, M. Uren, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

S. Decoutere, M. Uren, Martin Kuball, 2018, IEEE Electron Device Letters.

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

P. Tasker, A. Eblabla, K. Elgaid, 2018, IEEE Electron Device Letters.

Electrical and Thermal Feedback Effects on the Small-Signal Drain Characteristics of Partially-Depleted Soi Mosfets

R. Howes, W. Redman-White, R.J.T. Bunyan, 1992, 1992 IEEE International SOI Conference.

The Wigner glass and conductance oscillations in silicon inversion layers

M. Uren, M. Pepper, 1982 .

Logarithmic corrections, localisation and interaction effects in silicon inversion layers

M. Uren, M. Pepper, R. Davies, 1982 .

Localisation in disordered two-dimensional systems and the universal dependence on diffusion length

M. Uren, M. Pepper, R. Davies, 1981 .

Magnetic delocalisation of a two-dimensional electron gas and the quantum law of electron-electron scattering

M. Uren, M. Pepper, R. Davies, 1981 .

Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

M. Uren, Martin Kuball, Kean-Boon Lee, 2021, Applied Physics Letters.

A gas-sensitive field effect transistor utilizing a thin film of lead phthalocyanine as the gate material

M. Uren, P. Burr, P. D. Jeffery, 1987 .

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

M. Uren, S. Keller, U. Mishra, 2014 .

Nanosecond Time-Resolved Raman Thermography: Probing Device and Channel Temperature in Pulsed-Operated GaN and GaAs HEMTs

T. Martin, M. Uren, G. Riedel, 2008 .

Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices

T. Martin, M. Uren, M. Kuball, 2008, 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Thermal Properties and Reliability of GaN Microelectronics: Sub-Micron Spatial and Nanosecond Time Resolution Thermography

T. Martin, M. Uren, G. Riedel, 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

Time‐resolved nanosecond sub‐micron resolution thermal analysis of high‐power AlGaN/GaN HFETs

K. Hilton, T. Martin, M. Uren, 2007 .

Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution

K. Hilton, T. Martin, M. Uren, 2007 .

Nanoscale characterisation of electronic and spintronic nitrides and arsenides

P. D. Brown, K. Hilton, T. Martin, 2006 .

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

M. Uren, M. Kuball, Huarui Sun, 2015 .

Junction temperature measurements and reliability of GaN FETs

Martin Kuball, Michael J. Uren, Nicole Killat, 2013, Photonics West - Optoelectronic Materials and Devices.

Hot-Electron Electroluminescence Under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes

P. Tasker, M. Uren, H. Blanck, 2017, IEEE Transactions on Electron Devices.

RF waveform method for the determination of the safe operating area of GaN HFET's for amplifiers subjected to high output VSWR

Johannes Benedikt, Paul Tasker, Jeff Powell, 2010, The 5th European Microwave Integrated Circuits Conference.

Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC

C. D. Walton, P. H. Key, M. Uren, 2000 .

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

M. Uren, Martin Kuball, S. Karboyan, 2017, IEEE Transactions on Electron Devices.

Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

K. B. Lee, M. Uren, D. Wallis, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

Y. Hao, M. Uren, Xiao-hua Ma, 2020 .

GaN transistor reliability and instabilities

M. Uren, Martin Kuball, 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.

2 dimensional electron gas uniformity of GaN HFET layers on SiC

T. Martin, M. Uren, D. Wallis, 2012 .

On the incorporation mechanism of Fe in GaN grown by metal‐organic vapour phase epitaxy

T. Martin, M. Uren, D. Wallis, 2006 .

Experimental Investigation of DC-RF Dispersion in AlGaN / GaN HFET ’ s Using Pulsed I-V and Time-Domain Waveform Measurements

P. Tasker, K. Hilton, T. Martin, 2005 .

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

T. Martin, M. Uren, Martin Kuball, 2018, IEEE Transactions on Electron Devices.

Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

M. Uren, D. Wallis, P. Parbrook, 2009 .

Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology

P. Tasker, A. Eblabla, K. Elgaid, 2019, IEEE Transactions on Electron Devices.

High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters)

T. Martin, M. Uren, A. Lell, 2005 .

Generation of coherent gigahertz acoustic phonons in AlGaN/GaN microwave field-effect transistors

Jung-Hoon Song, K. Hilton, T. Martin, 2003 .

Suppression of instabilities in 4H-SiC microwave MESFETs

D. Hayes, K. Hilton, M. Uren, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

Y. Hao, M. Uren, Xiao-hua Ma, 2020, Semiconductor Science and Technology.

Low Frequency Noise in Small MOS Devices

M. Uren, 1992 .

Thermal Transport in Superlattice Castellated Field Effect Transistors

Josephine B. Chang, M. Uren, R. Howell, 2019, IEEE Electron Device Letters.

Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN

M. Uren, I. Thayne, Xu Li, 2020 .

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

K. Elgaid, M. Uren, I. Thayne, 2020, AIP Advances.

Effect of post oxidation processing on dry oxides on N-type 4H-SiC

M. Uren, C. Anthony, 1999 .

Radiation hardness of N2O grown oxynitrides assessed using the conductance technique

M. Uren, C. Anthony, V. Nayar, 1996 .

Fast and slow interface state distributions on (100) and (111) Si:SiO 2 surfaces following negative bias stress

M. Uren, A. Hodge, J. Ostler, 1995 .

Raman Thermography of Peak Channel Temperature in $\beta$ -Ga2O3 MOSFETs

M. Uren, S. Yamakoshi, K. Sasaki, 2019, IEEE Electron Device Letters.

An experimental and theoretical study of the formation and microstructure of porous silicon

Michael J. Uren, A. G. Cullis, N. G. Chew, 1985 .

High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

M. Uren, F. Calle, M. di Forte Poisson, 2009, IEEE Electron Device Letters.

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

M. Uren, Martin Kuball, P. Houston, 2019, IEEE Transactions on Electron Devices.

Field Plate in All-GaN Cascode Heterojunction Field-Effect

M. Uren, Martin Kuball, P. Houston, 2019 .

Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

S. Decoutere, M. Uren, Martin Kuball, 2020, IEEE Electron Device Letters.

The impact of leakage on dynamic RON in GaN-on-Si HEMTs

S. Decoutere, M. Uren, Martin Kuball, 2020 .

The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States

M. J. Kirton, M. Uren, S. Collins, 1988 .

Ferroeleciric Thin Films Intended for Electronic Device Applications

E. A. Logan, M. Uren, A. Patel, 1993 .

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

K. Hilton, M. Uren, P. Bhatnagar, 2007 .

Thermal and Piezoelectric Stress in Operating AlGaN / GaN HFET Devices and Effect of the Fe Doping in the GaN Buffer Layer

T. Martin, M. Uren, H. Ji, 2009 .

Conductance measurements on Pb centers at the (111) Si:SiO2 interface

James H. Stathis, Eduard A. Cartier, Michael J. Uren, 1996 .

Asymmetric conductance peaks observed in silicon metal‐oxide‐semiconductor capacitors

M. J. Kirton, M. Uren, S. Collins, 1990 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Logarithmic corrections to two-dimensional transport in silicon inversion layers

M. Uren, M. Pepper, R. Davies, 1981 .

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

G. Meneghesso, M. Meneghini, S. Gerardin, 2019, IEEE Transactions on Electron Devices.

Punch-through in short-channel AlGaN/GaN HFETs

D. Ducatteau, J.C. De Jaeger, E. Morvan, 2006, IEEE Transactions on Electron Devices.

Investigation of the GaN-on-GaAs interface for vertical power device applications

C. T. Foxon, S. Haigh, M. Uren, 2014 .

Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT

D. Hayes, M. Uren, K. Kalna, 2009 .

Mechanism of hot electron electroluminescence in GaN-based transistors

Francesco Sarti, Martin Kuball, Michael J. Uren, 2016 .

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015 .

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Peter Moens, Matteo Meneghini, Benoit Bakeroot, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Electron Trapping in GaN-on-Si Power HEMTs

Gaudenzio Meneghesso, Michael J. Uren, Peter Moens, 2015, ICNS 2015.

Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

Gaudenzio Meneghesso, Enrico Zanoni, Francesca Rossi, 2010 .

Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

Martin Kuball, Michael J. Uren, David J. Wallis, 2012 .

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

K. B. Lee, M. Uren, D. Wallis, 2015 .

Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation

Martin Kuball, Michael J. Uren, Huarui Sun, 2014, Microelectron. Reliab..

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

Martin Kuball, Michael J. Uren, Huarui Sun, 2014 .

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Martin Kuball, Michael J. Uren, Chris Hodges, 2012 .

Microstructure and formation mechanism of porous silicon

Michael J. Uren, A. G. Cullis, N. G. Chew, 1985 .

Transport behavior of holes in boron delta-doped diamond structures

M. Markham, M. Uren, I. Friel, 2013 .

Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond

M. Uren, L. Witkowski, M. Kuball, 2021, IEEE Transactions on Electron Devices.

Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices

M. Uren, M. Kuball, J. Pomeroy, 2019, Applied Physics Express.

Magnetic separation of localisation and interaction effects in a two-dimensional electron gas at low temperatures

M. Uren, M. Pepper, R. Davies, 1981 .

Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts

Michael J. Uren, Paul D. Brown, B. T. Hughes, 2002 .

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

T. Martin, M. Uren, R. Balmer, 2006, IEEE Electron Device Letters.

Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

M. Kuball, K. Hilton, T. Martin, 2004, IEEE Electron Device Letters.

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Hervé Blanck, Jonathan Lees, Paul J. Tasker, 2015 .

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Hangfeng Ji, K. Hilton, T. Martin, 2006, IEEE Transactions on Electron Devices.

Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Martin Kuball, Michael J. Uren, Andrei Sarua, 2003 .

The formation of porous silicon by chemical stain etches

N. G. Chew, M. Uren, A. Cullis, 1986 .

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

M. Uren, Martin Kuball, J. Pomeroy, 2021, Nature Electronics.

Leakage mechanisms in GaN-on-GaN vertical pn diodes

M. Uren, Martin Kuball, T. Kachi, 2018, Applied Physics Letters.

Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation

M. Uren, D. Ji, Martin Kuball, 2022 .

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

Benoit Lambert, Martin Kuball, Michael J. Uren, 2015, Microelectron. Reliab..

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Umesh K. Mishra, Martin Kuball, Michael J. Uren, 2012 .

Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI device

William Redman-White, R.J.T. Bunyan, Michael J. Uren, 1999 .

Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content

Michael J. Uren, Paul D. Brown, K. P. Hilton, 2004 .

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

Niklas Rorsman, T. Martin, Paul J. Tasker, 2017, Microelectron. Reliab..

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

K. B. Lee, T. Martin, M. Uren, 2010 .

Silicon Carbide Vertical JFET Operating at High Temperature

K. Hilton, M. Uren, C. M. Johnson, 2008 .

Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC

A. O'Neill, K. Hilton, M. Uren, 2000 .

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

P. Tasker, M. Uren, S. Yamakoshi, 2018, IEEE Electron Device Letters.

Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors

Robert M. Richardson, Martin Kuball, Michael J. Uren, 2014, Microelectron. Reliab..

A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling

O. Faynot, William Redman-White, Michael J. Uren, 2001 .

Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography

Martin Kuball, Michael J. Uren, Tim Batten, 2010 .

Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

E. Janzén, T. Martin, M. Uren, 2011 .

On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

D. Hayes, M. Uren, C. Oxley, 2006, IEEE Transactions on Electron Devices.

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

M. Kuball, J. O. Maclean, K. Hilton, 2008, IEEE Electron Device Letters.

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

A. Allerman, M. Uren, R. Kaplar, 2018, IEEE Electron Device Letters.

Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor

M. Uren, C. Oxley, M.J. Uren, 2005, IEEE Transactions on Electron Devices.

The observation of interaction and localisation effects in a two-dimensional electron gas at low temperatures

M. Uren, M. Pepper, R. Davies, 1980 .

Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

T. Martin, M. Uren, R. Balmer, 2005 .

Individual interface states and their implications for low-frequency noise in MOSFETs

Michael J. Uren, M. J. Kirton, S. Collins, 1987 .

Integrated Raman - IR Thermography on AlGaN/GaN Transistors

M. Kuball, T. Martin, M. Uren, 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

GaN/AlGaN HFETs fabricated on a SiC substrate

B. T. Hughes, M. Uren, J. Birbeck, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Martin Kuball, Peter A. Houston, Michael J. Uren, 2015, IEEE Transactions on Electron Devices.

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

Kenneth D. Pedrotti, Martin Kuball, Jan Sonsky, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Generation of Random Telegraph Noise by Single Si/SiO2 Interfacial Defects

M. Uren, D. Cobden, 1993 .

Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

Martin Kuball, Michael J. Uren, Andrei Sarua, 2010, Semiconductor Science and Technology.

High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters)

T. Martin, M. Uren, A. Lell, 2005 .

Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

K. Hilton, M. Uren, M. Kuball, 2002 .

Insights into electroluminescent emission from AlGaN /GaN field effect transistors using micro-Raman thermal analysis

Martin Kuball, Michael J. Uren, James W Pomeroy, 2006 .

Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Peter J Heard, Martin Kuball, Michael J. Uren, 2005 .

Surface Induced Instabilities in 4H-SiC Microwave MESFETs

Michael J. Uren, D. Hayes, K. Hilton, 2000 .

Surface Control of 4H-SiC MESFETs

D. Hayes, K. Hilton, M. Uren, 2002 .

Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

A. O'Neill, K. Hilton, M. Uren, 2005 .

Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

K. Hilton, M. Uren, P. Wilding, 2000 .

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

G. Meneghesso, M. Meneghini, M. Tack, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer

M. Uren, M. Kuball, 2020, 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

S. Decoutere, M. Uren, Martin Kuball, 2018, IEEE Transactions on Electron Devices.

Infra-red reflectivity of ion-implanted and pulsed excimer laser irradiated 4H-SiC

David Sands, Michael J. Uren, K. M. Brunson, 2000 .

TEM Assessment of AuTiAlTi and AuPdAlTi Ohmic Contacts to AlGaN/GaN

B. T. Hughes, M. Uren, M. Fay, 2003 .

Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques

William Redman-White, Michael J. Uren, B. M. Tenbroek, 1996 .

DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT

Florin Udrea, M. Bawedin, Michael J. Uren, 2010 .

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Denis Marcon, Martin Kuball, Michael J. Uren, 2013 .

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

A. J. Hydes, Anthony O'Neill, Konstantin Vassilevski, 2007 .

2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications

J. Grajal, C. Lanzieri, A. Cetronio, 2008, 2008 European Microwave Integrated Circuit Conference.

(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

Balaji Padmanabhan, Frederick Declercq, Gaudenzio Meneghesso, 2016 .

Negative dynamic Ron in AlGaN/GaN power devices

G. Meneghesso, M. Meneghini, M. Tack, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Martin Kuball, Michael J. Uren, Alexander Pooth, 2015 .

RF waveform investigation of VSWR sweeps on GaN HFETs

Johannes Benedikt, Paul Tasker, Jeff Powell, 2011, 2011 6th European Microwave Integrated Circuit Conference.

Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs)

R. H. Wallis, W. A. Phillips, R. A. Abram, 2002 .

Back Bias Effects in AlGaN/GaN HFETs

Michael J. Uren, B. T. Hughes, T. Martin, 2001 .

Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors

M. Uren, D. Ritter, D. Tripathi, 2020, IEEE Transactions on Electron Devices.

Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

M. Uren, M. Kuball, S. Karboyan, 2016 .

Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

M. Uren, Martin Kuball, S. Karboyan, 2021, Semiconductor Science and Technology.

Control of Short-Channel Effects in GaN/AlGaN HFETs

J. Benedikt, C. Roff, P. McGovern, 2006, 2006 European Microwave Integrated Circuits Conference.

Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

A. O'Neill, K. Hilton, M. Uren, 2000 .

Determination of the dielectric constant of GaN in the kHz frequency range

M. Uren, D. Soley, T. Martin, 2011 .

Validation of the voltage step technique for determination of slow state density in MOS gate oxides

M. Uren, Stephen Taylor, M. Spillane, 1999 .

Understanding Surface and Bulk Leakage Mechanisms in AlGaN/GaN HFETs

M. Uren, J. Glasper, R. Balmer, 2005 .

Intersubband resonances in sosmos accumulation layers

M. Uren, F. Fang, T. Theis, 1983 .

Conductance oscillations and source-drain-limited conduction in Si MOSFETs

M. Uren, M. Pepper, R. Oakley, 1979 .

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates

Nathalie Labat, Nathalie Malbert, André Touboul, 2003, Microelectronics and reliability.

Measurement and simulation of self-heating in SOI CMOS analogue circuits

W. Redman-White, R.J.T. Bunyan, B.M. Tenbroek, 1997, 1997 IEEE International SOI Conference Proceedings.

An improved technique for the evaluation of surface Fermi energy in metal-oxide-semiconductor capacitors

M. Uren, K. Brunson, 1994 .

Optimisation of furnace oxidation of Si with respect to negative bias stress instability

M. Uren, K. Brunson, A. Hodge, 1993 .

A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments

Michael J. Uren, William Redman-White, M. Bracey, 1999, IEEE J. Solid State Circuits.

The effect of body contact series resistance on SOI CMOS amplifier stages

William Redman-White, Michael J. Uren, C. F. Edwards, 1997 .

CMOS for Extreme Radiation Environments

William Redman-White, Christopher F. Edwards, Michael J. Uren, 1999 .

Quality and reliability of wet and dry oxides on n-type 4H-SiC

M. Uren, C. Anthony, Allan Jones, 1999 .

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

C. M. Johnson, A. O'Neill, K. Hilton, 2006 .

Potential fluctuations due to P b centres at the Si SiO 2 interface

James H. Stathis, Michael J. Uren, M. Uren, 1997 .

Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes

A. O'Neill, K. Hilton, M. Uren, 1999 .