H. Kosina

S. Selberherr, H. Kosina, C. Troger, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain

H. Kosina, V. Sverdlov, S.E. Ungersboeck, 2007, IEEE Transactions on Nanotechnology.

Two-band k p model for the conduction band in silicon : Impact of strain and confinement on band structure and mobility

S. Selberherr, H. Kosina, V. Sverdlov, 2008 .

The Effect of General Strain on the Band Structure and Electron Mobility of Silicon

S. Selberherr, H. Kosina, E. Ungersboeck, 2007, IEEE Transactions on Electron Devices.

Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs

S. Selberherr, H. Kosina, E. Ungersboeck, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Orientation Dependence of the Low Field Mobility in Double-and Single-gate SOI FETs

S. Selberherr, H. Kosina, E. Ungersboeck, 2006, 2006 European Solid-State Device Research Conference.

Coupling of Monte Carlo and drift diffusion method with applications to metal oxide semiconductor field effect transistors

S. Selberherr, H. Kosina, 1990 .

Chapter 5 Wigner Function Approach

M. Nedjalkov, H. Kosina, D. Querlioz, 2011 .

Effects of shear strain on the conduction band in silicon: An efficient two-band k·p theory

S. Selberherr, H. Kosina, E. Ungersboeck, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Optimizing thermoelectric power factor by means of a potential barrier

H. Kosina, N. Neophytou, 2013, 1307.8156.

A semiclassical transport model for quantum cascade lasers based on the Pauli master equation

H. Kosina, G. Milovanović, 2010 .

Electron subband dispersions in ultra-thin silicon films from a two-band k⋅p theory

S. Selberherr, H. Kosina, V. Sverdlov, 2008 .

Analysis of Filter Techniques for Monte-Carlo Device Simulation

S. Selberherr, H. Kosina, 2007 .

Electron mobility model for strained-Si devices

S. Selberherr, H. Kosina, V. Palankovski, 2005, IEEE Transactions on Electron Devices.

Monte Carlo modeling of the electron mobility in strained Si1 xGex layers on arbitrarily oriented Si1 yGey substrates

H. Kosina, S. Smirnov, 2004 .

The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

S. Selberherr, M. Nedjalkov, H. Kosina, 2003 .

Investigation of the Electron Mobility in Strained Si 1 − x Ge x at High Ge Composition ∗

S. Selberherr, H. Kosina, S. Smirnov, 2003 .

PARTICLE MODELS FOR DEVICE SIMULATION

M. Nedjalkov, H. Kosina, 2003 .

Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

S. Selberherr, M. Nedjalkov, H. Kosina, 2003 .

Investigation of the electron mobility in strained Si/sub 1-x/Ge/sub x/ at high Ge composition

S. Selberherr, H. Kosina, S. Smirnov, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands

S. Selberherr, H. Kosina, P. Vogl, 1995 .

Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields

S. Selberherr, H. Kosina, M. Hackel, 1993 .

Monte-Carlo - Poisson Coupling Using Transport Coefficients

S. Selberherr, H. Kosina, P. Lindorfer, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Ionized-Impurity Scattering of Majority Electrons in Silicon

H. Kosina, G. Kaiblinger-Grujin, 1998 .

A multi-purpose Schrödinger-Poisson Solver for TCAD applications

S. Selberherr, T. Grasser, H. Kosina, 2007 .

Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs

S. Selberherr, T. Grasser, H. Kosina, 2001 .

A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling

S. Selberherr, H. Kosina, C. Wasshuber, 1996, Journal of Technology Computer Aided Design TCAD.

Femtosecond relaxation of hot electrons by phonon emission in presence of electric field

Siegfried Selberherr, Paula A. Whitlock, Mihail Nedjalkov, 2002 .

A Wigner equation with quantum electron-phonon interaction

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2002 .

Substrate orientation-dependence of electron mobility in strained SiGe layers

S. Selberherr, H. Kosina, S. Smirnov, 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

Large thermoelectric power factor in p-type Si (110)/[110] ultra-thin-layers compared to differently oriented channels

Hans Kosina, H. Kosina, N. Neophytou, 2012, 1207.6801.

Subband Engineering for p-type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis

Gerhard Klimeck, H. Kosina, N. Neophytou, 2011, 1104.1522.

A new gate current model accounting for a non-Maxwellian electron energy distribution function

S. Selberherr, T. Grasser, H. Kosina, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Einstein relation in hopping transport of organic semiconductors

H. Kosina, Ling Li, G. Meller, 2009 .

The effect of oxide shell thickness on the structural, electronic, and optical properties of Si-SiO2 core-shell nano-crystals: A (time dependent)density functional theory study

H. Kosina, M. Pourfath, E. A. Soleimani, 2016 .

Rigorous modeling of carbon nanotube transistors

S. Selberherr, H. Kosina, M. Pourfath, 2006 .

Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors

S. Selberherr, H. Kosina, M. Pourfath, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Numerical constraints and non-spatial open boundary conditions for the Wigner equation

H. Kosina, J. Cervenka, R. Kosik, 2021, Journal of Computational Electronics.

Impact of Defect‐Induced Strain on Device Properties

H. Kosina, M. Reiche, O. Baumgartner, 2017 .

Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

F. Guarín, H. Kosina, A. Sarmiento-Reyes, 2015, IEEE Electron Device Letters.

FPGA Synthesis and CAD for Reconfigurable Systems

Luca Benini, Stephen A. Edwards, Yunheung Paek, 2009 .

Preface

Laurence T. Yang, Yiming Li, Tor A. Fjeldly, 2008, Math. Comput. Simul..

Optical properties of armchair graphene nanoribbons embedded in hexagonal boron nitride lattices

H. Kosina, M. Pourfath, M. Fathipour, 2012 .

An analytical model for organic thin film transistors

H. Kosina, Ling Li, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

Large thermoelectric power factor in p-type Si (110)/[110] ultra-thin-layers compared to differently oriented channels

H. Kosina, N. Neophytou, 2012, 1207.6801.

Thermoelectric Properties of Scaled Silicon Nanowires Using the sp3d 5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport

H. Kosina, N. Neophytou, 2011, 1104.1523.

Thermo-Magnetic Effects in Nano-Scaled MOSFET: An Experimental, Modeling, and Simulation Approach

F. Guarín, H. Kosina, E. Gutiérrez-D., 2015, IEEE Journal of the Electron Devices Society.

Edge Modes and their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase

H. Kosina, V. Sverdlov, Heribert Seiler, 2022, Solid-State Electronics.

Transport energy in organic semiconductors with partially filled localized states

H. Kosina, Ling Li, G. Meller, 2008 .

On the effectiveness of the thermoelectric energy filtering mechanism in low-dimensional superlattices and nano-composites

H. Kosina, N. Neophytou, M. Thesberg, 2016, 1701.02567.

Wigner Function-Based Device Modeling

M. Nedjalkov, H. Kosina, 2008 .

Monte Carlo Algorithms for Stationary Device Simulation Abstract The Monte Carlo (MC) method for simulation of semi-classical transport in semiconductors

S. Selberherr, M. Nedjalkov, H. Kosina, 2001 .

The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon NanoCrystals : A Density Functional Theory Study

H. Kosina, M. Pourfath, E. A. Soleimani, 2015 .

Anomalous diameter dependence of thermal transport in ultra-narrow Si nanowires

H. Kosina, N. Neophytou, H. Karamitaheri, 2014, 1401.3756.

Simulation of carrier injection and propagation in molecularly disordered systems

H. Kosina, S. Holzer, Ling Li, 2006, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices.

Transport of Charge Carriers along Dislocations in Si and Ge

H. Kosina, M. Reiche, O. Baumgartner, 2019, physica status solidi (a).

Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

H. Kosina, N. Neophytou, 2011, 1109.1717.

Low-dimensional phonon transport effects in ultranarrow disordered graphene nanoribbons

H. Kosina, N. Neophytou, M. Pourfath, 2015, 1504.03354.

Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes

H. Kosina, N. Neophytou, S. Wolf, 2014, Journal of Electronic Materials.

Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness

H. Kosina, N. Neophytou, S. Wolf, 2014, 1405.7738.

The backward Monte Carlo method for semiconductor device simulation

H. Kosina, M. Kampl, 2018, Journal of Computational Electronics.

Adsorption of the NH3, NO, NO2, CO2, and CO gas molecules on blue phosphorene: A first-principles study

H. Kosina, M. Fathipour, M. Moradinasab, 2019, Applied Surface Science.

Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications

T. Grasser, H. Kosina, V. Sverdlov, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

S. Selberherr, T. Grasser, H. Kosina, 2006 .

Numerical Solution of the Constrained Wigner Equation

H. Kosina, J. Cervenka, R. Kosik, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T’ Phase

S. Selberherr, H. Kosina, V. Sverdlov, 2020, IEEE Transactions on Electron Devices.

Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T Phase

S. Selberherr, H. Kosina, V. Sverdlov, 2020 .

Synthesis of a tripeptide with a C-terminal nitrile moiety and the inhibition of proteinases.

H. Kosina, W. Stüber, N. Heimburger, 2009, International journal of peptide and protein research.

Effect of band structure discretization on the performance of full-band Monte Carlo simulation

W. Wessner, Hans Kosina, G. Karlowatz, 2008, Math. Comput. Simul..

Diffusion-controlled charge injection model for organic light-emitting diodes

Hans Kosina, Gregor Meller, H. Kosina, 2007 .

Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

Siegfried Selberherr, Tibor Grasser, Hans Kosina, 2002 .

Integration of MOSFETs with SiGe dots as stressor material

L. Nanver, H. Kosina, O. Schmidt, 2011 .

Gated Si nanowires for large thermoelectric power factors

H. Kosina, N. Neophytou, 2014, 1409.7045.

Device modeling in the Wigner picture

M. Nedjalkov, H. Kosina, P. Schwaha, 2010 .

Device modeling in the Wigner picture Computational aspects

M. Nedjalkov, H. Kosina, P. Schwaha, 2010 .

Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers

H. Kosina, M. Pourfath, M. Moradinasab, 2014 .

Anomalous piezoresistance effect in ultrastrained silicon nanowires.

A. Lugstein, H. Kosina, H. Kosina, 2010, Nano letters.

Analytical models of approximations for wave functions and energy dispersion in zigzag graphene nanoribbons

H. Kosina, M. Pourfath, M. Fathipour, 2012 .

A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons

S. Selberherr, H. Kosina, M. Pourfath, 2012, IEEE Transactions on Electron Devices.

Computational study of carbon-based electronics

H. Kosina, M. Pourfath, 2009 .

Compact model for the electronic properties of edge-disordered graphene nanoribbons

H. Kosina, M. Pourfath, M. Fathipour, 2011, 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.

Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method

S. Selberherr, H. Kosina, A. Gehring, 2003 .

Consistent Comparison of Tunneling Models for Device Simulation

S. Selberherr, T. Grasser, H. Kosina, 2022 .

Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers

H. Kosina, M. Pourfath, M. Moradinasab, 2015, IEEE Journal of Quantum Electronics.

An energy relaxation time model for device simulation

S. Selberherr, B. Gonzalez, V. Palankovski, 1999 .

Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

S. Selberherr, H. Kosina, N. Neophytou, 2010, 1006.4212.

Method for predicting f/sub T/ for carbon nanotube FETs

L. C. Castro, H. Kosina, M. Pourfath, 2005, IEEE Transactions on Nanotechnology.

Method for Predicting fT for Carbon Nanotube FETs

L. C. Castro, H. Kosina, M. Pourfath, 2005 .

SIMON-A simulator for single-electron tunnel devices and circuits

Siegfried Selberherr, Christoph Wasshuber, Hans Kosina, 1997, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Diagonal-transition quantum cascade detector

H. Kosina, G. Strasser, O. Baumgartner, 2014 .

Subbands in a Nanoribbon of Topologically Insulating MoS2 in the 1T′ Phase

S. Selberherr, H. Kosina, V. Sverdlov, 2021 .

First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons

H. Kosina, V. Sverdlov, A. El-Sayed, 2021 .

Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon

S. Selberherr, H. Kosina, V. Sverdlov, 2020 .

Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS2 Nanoribbons

H. Kosina, V. Sverdlov, Heribert Seiler, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Quantum correction for DG MOSFETs

T. Grasser, H. Kosina, M. Karner, 2007 .

A Tensorial High-Field Electron Mobility Model for Strained Silicon

S. Selberherr, T. Grasser, H. Kosina, 2006, 2006 International SiGe Technology and Device Meeting.

Optimization of single-gate carbon-nanotube field-effect transistors

S. Selberherr, H. Kosina, M. Pourfath, 2005, IEEE Transactions on Nanotechnology.

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

S. Selberherr, H. Kosina, M. Pourfath, 2005 .

Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method

H. Kosina, A. Gehring, 2005 .

On the Lorenz number of multiband materials

H. Kosina, N. Neophytou, M. Thesberg, 2017, 1704.00466.

Atomistic calculations of the electronic, thermal, and thermoelectric properties of ultra-thin Si layers

Hans Kosina, H. Kosina, N. Neophytou, 2013 .

Numerical study of the thermoelectric power factor in ultra-thin Si nanowires

H. Kosina, N. Neophytou, 2012, 1201.6032.

Numerical study of quantum transport in carbon nanotube transistors

Siegfried Selberherr, Hans Kosina, Mahdi Pourfath, 2008, Math. Comput. Simul..

Current transport in carbon nanotube transistors

S. Selberherr, H. Kosina, M. Pourfath, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis.

Hans Kosina, H. Kosina, N. Neophytou, 2010, Nano letters.

Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation

H. Kosina, N. Neophytou, H. Karamitaheri, 2013, 1306.2448.

The influence of non-idealities on the thermoelectric power factor of nanostructured superlattices

H. Kosina, N. Neophytou, M. Pourfath, 2015, 1512.04606.

Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study

H. Kosina, N. Neophytou, H. Karamitaheri, 2015, Journal of Electronic Materials.

Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems

H. Kosina, N. Neophytou, D. Narducci, 2014, Journal of Electronic Materials.

Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires

H. Kosina, N. Neophytou, H. Karamitaheri, 2014, Journal of Electronic Materials.

Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si

H. Kosina, N. Neophytou, D. Narducci, 2013, Nanotechnology.

Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method

H. Kosina, N. Neophytou, R. Faez, 2013, Journal of Electronic Materials.

Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons

H. Kosina, N. Neophytou, M. Pourfath, 2012, 1203.2032.

Study of thermal properties of graphene-based structures using the force constant method

H. Kosina, N. Neophytou, M. Pourfath, 2012, 1202.1988.

On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires

Hans Kosina, H. Kosina, N. Neophytou, 2012, Journal of Electronic Materials.

Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices

H. Kosina, M. Pourfath, R. Faez, 2011 .

Hydrogen-passivated graphene antidot structures for thermoelectric applications

H. Kosina, M. Pourfath, R. Faez, 2011, 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.

Subband Engineering for p-type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis

Gerhard Klimeck, H. Kosina, N. Neophytou, 2011, 1104.1522.

Graphene Antidot Structures for Thermoelectric Applications

H. Kosina, M. Pourfath, H. Karamitaheri, 2011 .

Graphene-Based Antidots for Thermoelectric Applications

H. Kosina, M. Pourfath, M. Pazoki, 2011 .

A comprehensive atomistic analysis of bandstructure velocities in si nanowires

Gerhard Klimeck, H. Kosina, N. Neophytou, 2010, 2010 14th International Workshop on Computational Electronics.

An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons

S. Selberherr, H. Kosina, M. Pourfath, 2011, IEEE Transactions on Electron Devices.

Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation

H. Kosina, O. Baumgartner, M. Karner, 2010 .

Simulation of ULSI Processes and Devices

Siegfried Selberherr, Hans Kosina, K. Wimmer, 1991 .

Electron Mobility Model for $\langle \hbox{110} \rangle$ Stressed Silicon Including Strain-Dependent Mass

S. Selberherr, T. Grasser, H. Kosina, 2007, IEEE Transactions on Nanotechnology.

Electron Mobility Model for 〈 110 〉 Stressed Si Including Strain-Dependent Mass

S. Selberherr, T. Grasser, H. Kosina, 2006 .

Geometry optimization for carbon nanotube transistors

S. Selberherr, H. Kosina, M. Pourfath, 2007 .

Full band calculations of low-field mobility in p-type silicon nanowire MOSFETs

H. Kosina, N. Neophytou, Z. Stanojević, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Strong anisotropy and diameter effects on the low-field mobility of silicon nanowires

H. Kosina, N. Neophytou, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Electronic band structure modeling in strained Si-nanowires: Two band k · p versus tight binding

Z. Stanojevic, O. Baumgartner, V. Sverdlov, 2010, 2010 14th International Workshop on Computational Electronics.

Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study

S. Selberherr, Gerhard Klimeck, H. Kosina, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance

T. Rakshit, H. Kosina, N. Neophytou, 2009, 2009 13th International Workshop on Computational Electronics.

Wigner function approach to nano device simulation

Hans Kosina, H. Kosina, 2006, Int. J. Comput. Sci. Eng..

Performance evaluation of graphene nanoribbon infrared photodetectors

S. Selberherr, H. Kosina, M. Pourfath, 2009, 2009 9th International Conference on Numerical Simulation of Optoelectronic Devices.

Technology CAD: process and device simulation

Siegfried Selberherr, Hans Kosina, S. Selberherr, 1997, 1997 21st International Conference on Microelectronics. Proceedings.

Improving the ambipolar behavior of Schottky barrier carbon nanotube field effect transistors

S. Selberherr, H. Kosina, M. Pourfath, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Simulation of carrier transport in carbon nanotube field effect transistors

S. Selberherr, H. Kosina, A. Gehring, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors

S. Selberherr, H. Kosina, M. Pourfath, 2004 .

Transient Schrödinger-Poisson simulations of a high-frequency resonant tunneling diode oscillator

Ansgar Jüngel, Hans Kosina, Jan-Frederik Mennemann, 2012, J. Comput. Phys..

Monte Carlo simulation of electron transport in doped silicon

G. Kaiblinger-Grujin, H. Kosina, S. Selberherr, 1997, Proceedings High Performance Computing on the Information Superhighway. HPC Asia '97.

VSP - A gate stack analyzer

Stefan Holzer, Siegfried Selberherr, Tibor Grasser, 2007, Microelectron. Reliab..

Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies

S. Selberherr, H. Kosina, E. Ungersboeck, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Efficient calculation of lifetime based direct tunneling through stacked dielectrics

Hans Kosina, Andreas Gehring, Markus Karner, 2006, ECS Transactions.

Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks

C. Busseret, E. Langer, C. Fiegna, 2007, IEEE Transactions on Electron Devices.

Percolation current in organic semiconductors

H. Kosina, Ling Li, G. Meller, 2007 .

Analytical Modeling of Electron Mobility in Strained Germanium

S. Selberherr, T. Grasser, H. Kosina, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Revision of the standard hydrodynamic transport model for SOI simulation

S. Selberherr, T. Grasser, H. Kosina, 2002 .

Investigation of a MOSCAP using NEGF

H. Kosina, M. Pourfath, O. Baumgartner, 2007, 2007 International Semiconductor Device Research Symposium.

Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling

Stefan Holzer, Markus Karner, Hans Kosina, 2005, LSSC.

Transmission Coefficient Estimation for High-κ Gate Stack Evaluation

S. Selberherr, H. Kosina, A. Gehring, 2002 .

INFLUENCE OF THE DOPING ELEMENT ON THE ELECTRON MOBILITY IN N-SILICON

Siegfried Selberherr, Hans Kosina, G. Kaiblinger-Grujin, 1998 .

Analytical conductivity model for doped organic semiconductors

H. Kosina, Ling Li, G. Meller, 2007 .

The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach

H. Kosina, N. Neophytou, M. Pourfath, 2016, Journal of Electronic Materials.

Numerical Study of Graphene Superlattice-Based Photodetectors

H. Kosina, M. Pourfath, M. Fathipour, 2015, IEEE Transactions on Electron Devices.

Investigation of quantum transport in nanoscaled GaN high electron mobility transistors

T. Grasser, H. Kosina, L. Filipovic, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons

H. Kosina, M. Pourfath, R. Faez, 2013, IEEE Transactions on Electron Devices.

Optimization study of third harmonic generation in quantum cascade lasers.

H. Kosina, M. Pourfath, Ali Mojibpour, 2014, Optics express.

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

H. Kosina, E. Bertagnolli, C. Ronning, 2016, Nano letters.

No . 20 / 2012 Convergence of adaptive 3 D BEM for weakly singular integral equations based on isotropic mesh-refinement

E. Weinmüller, H. Kosina, R. Pinnau, 2012 .

An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices

H. Kosina, M. Pourfath, R. Faez, 2011 .

The effect of phonon scattering on the switching response of carbon nanotube field-effect transistors

H. Kosina, M. Pourfath, 2007, Nanotechnology.

Optimization of Schottky barrier carbon nanotube field effect transistors

S. Selberherr, H. Kosina, M. Pourfath, 2005 .

Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors

Hans Kosina, Mahdi Pourfath, H. Kosina, 2005, LSSC.

On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors

S. Selberherr, H. Kosina, M. Pourfath, 2006 .

Transient Schrsimulations of a high-frequency resonant tunneling diode oscillator

H. Kosina, J. Mennemann, 2012 .

A Monte Carlo method for small signal analysis of the Boltzmann equation

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2000 .

Monte-Carlo method for direct computation of the small signal kinetic coefficients

S. Selberherr, M. Nedjalkov, H. Kosina, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Two-dimensional hydrodynamic simulation of High Electron Mobility Transistors using a block iterative scheme in combination with full Newton method

S. Selberherr, H. Kosina, R. Deutschmann, 1995, Proceedings of 4th International Conference on Solid-State and IC Technology.

MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices

S. Selberherr, T. Simlinger, M. Rottinger, 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

A SIMULATION STUDY OF PARTIALLY DEPLETED SOI MOSFETS

Siegfried Selberherr, M. Gritsch, Tibor Grasser, 2001 .

Temperature and field-dependence of hopping conduction in organic semiconductors

Ling Li, Hans Kosina, Gregor Meller, 2007, Microelectron. J..

Separated carrier injection control in carbon nanotube field-effect transistors

Siegfried Selberherr, Hans Kosina, Wanjun Park, 2005 .

VSP—a quantum-electronic simulation framework

Zlatan Stanojevic, Oskar Baumgartner, Markus Karner, 2013 .

A bi-functional quantum cascade device for same-frequency lasing and detection

Werner Schrenk, Gottfried Strasser, Oskar Baumgartner, 2012 .

Efficient simulation of quantum cascade lasers using the Pauli master equation

H. Kosina, O. Baumgartner, Z. Stanojević, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Report of Project Part 09 : CAD of semiconductor nanodevices Computer-aided design of semiconductor nanodevices

H. Kosina, 2011 .

Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers

Z. Stanojevic, O. Baumgartner, H. Kosina, 2011 .

A Revised Wigner Function Approach for Stationary Quantum Transport

Hans Kosina, Robert Kosik, Johann Cervenka, 2019, LSSC.

Device Simulation Demands of Upcoming Microelectronics Devices

Siegfried Selberherr, Hans Kosina, S. Selberherr, 2006 .

Exploring the design space of non-planar channels: Shape, orientation, and strain

Markus Karner, Zlatan Stanojevic, Hans Kosina, 2013, 2013 IEEE International Electron Devices Meeting.

Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

Siegfried Selberherr, Tibor Grasser, Christoph Jungemann, 2005 .

Modeling of Macroscopic Transport Parameters in Inversion Layers

T. Grasser, H. Kosina, E. Ungersboeck, 2007 .

Accurate impact ionization model which accounts for hot and cold carrier populations

Siegfried Selberherr, Tibor Grasser, Clemens Heitzinger, 2002 .

Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population

S. Selberherr, T. Grasser, H. Puchner, 2001, 31st European Solid-State Device Research Conference.

Using six moments of Boltzmann’s transport equation for device simulation

Siegfried Selberherr, Tibor Grasser, Hans Kosina, 2001 .

On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models

S. Selberherr, T. Grasser, H. Kosina, 2004 .

A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2003 .

HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS

Siegfried Selberherr, Tibor Grasser, Hans Kosina, 2003 .

A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2003, LSSC.

An event bias technique for Monte Carlo device simulation

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2003, Mathematics and Computers in Simulation.

Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2003 .

Wigner transport through tunneling structures scattering interpretation of the potential operator

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Improving strained-Si on Si/sub 1-x/Ge/sub x/ deep submicron MOSFETs performance by means of a stepped doping profile

T. Grasser, H. Kosina, J. Roldán, 2001 .

A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis

Siegfried Selberherr, Hans Kosina, S. Selberherr, 1994, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Advanced Transport Models for Sub-Micrometer Devices

Siegfried Selberherr, Tibor Grasser, Christoph Jungemann, 2004 .

Wigner-function based simulation of classic and ballistic transport in scaled DG-MOSFETs using the Monte Carlo method

H. Kosina, A. Gehring, 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

Improving Strained-Si on Si 1 x Ge x Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile

T. Grasser, H. Kosina, F. Gámiz, 2001 .

The Viennese integrated system for technology CAD applications

E. Leitner, S. Halama, S. Selberherr, 1995 .

Device modelling for the 1990s

Siegfried Selberherr, E. Langer, Hans Kosina, 1995 .

Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2001 .

Hot carrier study including e-e scattering based on a backward Monte Carlo method

H. Kosina, M. Kampl, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Monte Carlo algorithms for stationary device simulations

Siegfried Selberherr, Mihail Nedjalkov, Hans Kosina, 2003, Math. Comput. Simul..

Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation

Siegfried Selberherr, Hans Kosina, Mihail Nedjalkov, 2001 .

Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k•p model: conduction band of silicon

Siegfried Selberherr, Viktor Sverdlov, Hans Kosina, 2008, International Conference on Micro- and Nano-Electronics.

Influence of Uniaxial [ 110 ] Stress on Silicon Band Structure and Electron LowField Mobility in Ultra-Thin Body SOIs

H. Kosina, E. Ungersboeck, V. Sverdlov, 2008 .

Modeling concepts for modern semiconductor devices

Hans Kosina, T. Simlinger, H. Kosina, 1995, 1995 International Semiconductor Conference. CAS '95 Proceedings.

Mobility model for III-V compounds suited for hydrodynamic device simulation

S. Selberherr, Christoph Kopf, H. Kosina, 1996 .

Investigation of the Electron Mobility in Strained Si_ Ge_x at High Ge Composition( the IEEE International Conference on SISPAD '02)

Siegfried Selberherr, Hans Kosina, Sergey Smirnov, 2003 .

Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices

Siegfried Selberherr, F. Gámiz, Hans Kosina, 2003, Microelectronics and reliability.

A SYSTEMATIC APPROACH FOR MODEL EXTRACTION FOR DEVICE SIMULATION APPLICATION

S. Selberherr, H. Kosina, V. Palankovski, 2014 .

A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation

S. Selberherr, H. Kosina, V. Palankovski, 1998 .

Modeling Current Transport in Ultra-Scaled Field Effect Transistors

Siegfried Selberherr, Viktor Sverdlov, Hans Kosina, 2005, International Conference on Electron Devices and Solid-State Circuits.

The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers

H. Kosina, E. Ungersboeck, H. Kosina, 2005, 2005 International Conference On Simulation of Semiconductor Processes and Devices.

Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach

S. Selberherr, H. Kosina, A. Gehring, 2005 .

Quantum cascade detector utilizing the diagonal-transition scheme for high quality cavities.

M. Ibanescu, J. Faist, C. Sirtori, 2015, Optics express.

4.3 Μm Quantum Cascade Detector in Pixel Configuration References and Links

M. N. Kutty, H. Herzig, Niblack, 2022 .

Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon

H. Kosina, E. Ungersboeck, G. Karlowatz, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

SEMICLASSICAL APPROXIMATION OF ELECTRON-PHONON SCATTERING

S. Selberherr, M. Nedjalkov, H. Kosina, 2004 .

Hydrodynamic and energy-transport models for semiconductor device simulation: extensions and critical issues

Siegfried Selberherr, Tibor Grasser, Hans Kosina, 2002 .

Surface-roughness-scattering in non-planar channels — The role of band anisotropy

H. Kosina, Z. Stanojević, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

NANOTCAD Project: Nanotechnology Computer Aided Design

R. Sordan, Hans Kosina, Alfred Forchel, 2003 .

High-Field Electron Mobility Model for Strained-Silicon Devices

S. Selberherr, T. Grasser, H. Kosina, 2006, IEEE Transactions on Electron Devices.

A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure

Hans Kosina, M. Harrer, H. Kosina, 1998, VLSI Design.

Dynamic Monte Carlo Simulation of an Amorphous Organic Device

H. Kosina, S. Holzer, Ling Li, 2007 .

Anomalous piezoresistance effect in ultrastrained silicon nanowires.

H. Kosina, E. Bertagnolli, A. Lugstein, 2010, Nano letters (Print).

Tunneling CNTFETs

Siegfried Selberherr, Hans Kosina, Mahdi Pourfath, 2007 .