D. Schroder

Temperature dependent behaviour of silicon power semiconductors-a new physical model validated by device-internal probing between 400 K and 100 K

A.E. Schlogl, T.T. Mnatsakanov, D. Schroder, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

Temperature dependent characterization of silicon power semiconductors-a new physical model validated by device internal probing between 400 K and 100 K

H. Kuhn, A.E. Schlogl, T.T. Mnatsakanov, 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

A physical GTO model for circuit simulation

D. Schroder, D. Metzner, 1992, Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting.

Rapid evaluation of the root causes of BJT mismatch

Colin C. McAndrew, D. Schroder, P. G. Drennan, 2000, ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095).

A power bipolar junction transistor model describing the static and the dynamic behavior

D. Schroder, D. Schroder, C. Xu, 1989 .

Modeling and characterizing power semiconductors at low temperatures

D. Schroder, T. Vogler, A. Schlogl, 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.