E. Hammerl

A fully planarized 0.25 /spl mu/m CMOS technology for 256 Mbit DRAM and beyond

R. Kleinhenz, T. Mii, H. Aochi, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

MOS transistor and method of producing the

E. Hammerl, S. Pindl, H. Schaefer, 1997 .

Peak or centroid — which parameter is better suited for quantifying apparent marker locations in low‐energy sputter depth profiling with reactive primary ion beams?

E. Hammerl, K. Wittmaack, I. Eisele, 2001 .

Electrical transport between delta layers in silicon

E. Hammerl, I. Eisele, G. Gobsch, 1992 .

Self-Organizing Growth of Nanometer Mesa Structures on Silicon (100) Substrates

E. Hammerl, H. Gossner, I. Eisele, 1994 .

Local silicon molecular beam epitaxy with microshadow masks

E. Hammerl, I. Eisele, 1993 .

High Definition Mesa Growth by Silicon MBE

E. Hammerl, I. Eisele, H. Oppolzer, 1991 .

Defect-free strain relaxation in locally MBE-grown SiGe heterostructures

E. Hammerl, W. Hansch, I. Eisele, 1997 .

Delta doping superlattices in silicon

E. Hammerl, I. Eisele, W. Kiunke, 1990 .

On the sensitivity of positrons to electric fields and defects in MBE-grown silicon structures

E. Hammerl, W. Hansch, I. Eisele, 1994 .

Reel-to-Reel Fabrication of Integrated Circuits Based on Soluble Polymer Semiconductor

K. Bock, E. Hammerl, K. Bock, 2005, Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics.