Herbert L. Ho

A fully planarized 0.25 /spl mu/m CMOS technology for 256 Mbit DRAM and beyond

R. Kleinhenz, T. Mii, H. Aochi, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

Evolution of Stress During Heteroepitaxial Growth of NiSi 2 on (001) and (111) Silicon Substrates

Herbert L. Ho, C. Bauer, S. Mahajan, 1989 .

Reaction study of cobalt and silicon nitride

Herbert L. Ho, T. N. Nguyen, T. D. Nguyen, 1993 .

Evolution of Stress During Interfacial Reactions Between Ni Thin Films and (001) Si Substrates

Herbert L. Ho, A. Milnes, C. Bauer, 1988 .

Ordered structures in epitaxial nickel silicide films grown on (111) silicon substrates

Herbert L. Ho, C. Bauer, S. Mahajan, 1991 .

Evidence of Co/SiO_2 reaction during rapid thermal annealing

P. Geiss, B. Machesney, Herbert L. Ho, 1993 .

Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films

Herbert L. Ho, C. Bauer, S. Mahajan, 1996 .