T. Ohiwa

A fully planarized 0.25 /spl mu/m CMOS technology for 256 Mbit DRAM and beyond

R. Kleinhenz, T. Mii, H. Aochi, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

Sub-55 nm Etch Process Using Stacked-Mask Process

T. Ohiwa, I. Sakai, J. Abe, 2007 .

Chemical bond modification in porous SiOCH films by H2 and H2/N2 plasmas investigated by in situ infrared reflection absorption spectroscopy

T. Ohiwa, I. Sakai, H. Hayashi, 2011 .

H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics

T. Ohiwa, I. Sakai, H. Hayashi, 2011 .

Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching

T. Ohiwa, I. Sakai, M. Sekine, 1998 .

Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma

T. Ohiwa, I. Sakai, H. Hayashi, 2016 .

A new gas circulation RIE

T. Ohiwa, I. Sakai, K. Okumura, 1999, 1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314).