D. Stephani

发表

Status, prospects and commercialization of SiC power devices

D. Stephani, 2001, DRC 2001.

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

P. Friedrichs, D. Stephani, H. Mitlehner, 2000 .

Dynamic characteristics of high voltage 4H-SiC vertical JFETs

P. Friedrichs, D. Stephani, H. Mitlehner, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

Silicon carbide junction field effect transistors

Peter Friedrichs, Dietrich Stephani, P. Friedrichs, 2006 .

SiC power devices with low on-resistance for fast switching applications

P. Friedrichs, D. Stephani, H. Mitlehner, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

ATLAS detector and physics performance : Technical Design Report, 1

Gibson, M. L. Ferrer, W. W. Armstrong, 1999 .

ATLAS calorimeter performance

M. L. Ferrer, W. W. Armstrong, A. G. Frodesen, 1995 .

A semiconductor device with a tunnel junction, and processes for their preparation

D. Stephani, Heinz Dr. Mithlehner, 2004 .

ATLAS: Technical proposal for a general-purpose p p experiment at the Large Hadron Collider at CERN

W. W. Armstrong, A. I. Popov, J. R. Hubbard, 1994 .

Performance of a liquid argon accordion calorimeter with fast readout

V. Radeka, D. Rahm, C. Fuglesang, 1992 .

Performance of an endcap prototype of the ATLAS accordion electromagnetic calorimeter

M. Martinez, A. Savoy-Navarro, V. Radeka, 1997 .

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

P. Friedrichs, D. Stephani, R. Rupp, 1997 .

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

P. Friedrichs, D. Stephani, P. Friedrichs, 1999, IEEE Electron Device Letters.

An 1800 V triple implanted vertical 6H-SiC MOSFET

Peter Friedrichs, D. Stephani, H. Mitlehner, 1999 .

Performance and Reliability Issues of SiC-Schottky Diodes

Anton Mauder, Roland Rupp, Wolfgang Bartsch, 2000 .

ATLAS calorimeter performance Technical Design Report

Dominique Breton, Joseph A. Paradiso, Reinhard Männer, 1996 .

Optical lithography and O2/RIE pattern transfer characteristics of the silicon-containing positiv resist (SPR)

R. Sezi, D. Stephani, M. Sebald, 1989 .

First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

Roland Rupp, Dietrich Stephani, D. Stephani, 1995 .

Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison.

D. Stephani, R. Rupp, A. Wiedenhofer, 1999 .

Reliability of metal-oxide-semicondictor capacitors on 6H-silicon carbide

P. Friedrichs, D. Stephani, H. Ryssel, 1999 .

Epitaxial growth of SiC in a vertical multi-wafer CVD system: Already suited as production process?

D. Stephani, C. Hecht, R. Rupp, 1999 .

ATLAS computing technical proposal

Joseph A. Paradiso, Reinhard Männer, R. Van Berg, 1996 .

GEM technical design report

Joseph A. Paradiso, G. C. Fox, D. Crosetto, 1993 .

An accordion liquid argon electromagnetic calorimeter with absorber in all electrodes

V. S. Panin, V. Radeka, L. Rogers, 1994 .

A study of wire chambers with highly segmented cathode pad readout for high multiplicity charged particle detection

J. Fischer, V. Radeka, L. Rogers, 1990 .

PERFORMANCE OF A LARGE-SCALE PROTOTYPE OF THE ATLAS ACCORDION ELECTROMAGNETIC CALORIMETER

M. Martinez, A. Savoy-Navarro, V. Radeka, 1995 .

Performance of a liquid argon accordion hadronic calorimeter prototype

M. Martinez, A. Savoy-Navarro, V. Radeka, 1995 .

Performance of an accordion electromagnetic calorimeter with liquid krypton and argon

V. S. Panin, V. Radeka, L. Rogers, 1994 .

Silicon Carbide and Related Materials: ECSCRM2000

D. Stephani, G. Pensl, M. Hundhausen, 2000 .

Performance of a liquid argon electromagnetic calorimeter with a cylindrical accordion geometry

V. Radeka, D. Rahm, C. Fuglesang, 1993 .

Characterization of fast 4.5 kV SiC p-n diodes

P. Friedrichs, D. Stephani, H. Mitlehner, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

The NSLS 100 element solid state array detector.

L. Rogers, H. Kraner, D. Stephani, 1992, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment.

Position and timing resolution of interpolating cathode strip chambers in a test beam

V. Radeka, E. Radermacher, V. Gratchev, 1995 .

The RHIC ionization beam profile monitor

N. Tsoupas, V. Radeka, S. Tepikian, 1999, Proceedings of the 1999 Particle Accelerator Conference (Cat. No.99CH36366).

Particle identification performance of a straw transition radiation tracker prototype

J. S. Whitaker, V. Radeka, R. Richter, 1996 .

Thin-film inductive heads for perpendicular recording

D. Stephani, H. Schewe, 1990 .

Field emission from metal-coated silicon tips

D. Stephani, D. Stephani, D. W. Branston, 1991 .

A 240-channel thick film multi-chip module for readout of silicon drift detectors

V. Radeka, S. Nehmeh, H. Kraner, 2000 .

MWPC with highly segmented cathode pad readout

J. Fischer, V. Radeka, R. Debbe, 1989 .

Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

Peter Friedrichs, Sima Dimitrijev, Dietrich Stephani, 2002 .

Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide

P. Friedrichs, D. Stephani, H. Ryssel, 1998 .

Construction and test of a fine-grained liquid argon preshower prototype

M. Martinez, A. Savoy-Navarro, V. Radeka, 1997 .

1700 V SiC Schottky Diodes Scaled to 25 A

D. Stephani, C. Hecht, K. Dohnke, 2001 .

Periphery protection for silicon carbide devices: state of the art and simulation

Dominique Planson, Jean-Pierre Chante, S. Ortolland, 1997 .

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

D. Stephani, W. Bartsch, R. Schörner, 2004 .

To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes

D. Stephani, H. Mitlehner, W. Bartsch, 2003 .

Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

W. J. Choyke, D. Stephani, G. Pensl, 1994 .

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

P. Friedrichs, D. Stephani, K. Dohnke, 2005 .

4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

P. Friedrichs, D. Stephani, D. Peters, 2003 .

Anisotropic reactive ion etching of titanium

D. Stephani, K. Blumenstock, 1989 .

Performance of a liquid argon electromagnetic calorimeter with an “accordion” geometry

V. Radeka, D. Rahm, W. Willis, 1991 .

Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V

Peter Friedrichs, Heinz Mitlehner, Dietrich Stephani, 2000 .

SiC Power MOSFETs – Status, Trends and Challenges

P. Friedrichs, D. Stephani, D. Peters, 2006 .

Silicon Carbide Cvd Approaches Industrial Needs

Roland Rupp, Dietrich Stephani, D. Stephani, 1996 .

Switching behaviour of fast high voltage SiC pn-diodes

P. Friedrichs, D. Stephani, H. Mitlehner, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range

Peter Friedrichs, Dietrich Stephani, P. Friedrichs, 2002 .

A UV laser technique for the Lorentz effect compensation studies in end-cap cathode strip chambers

J. Hauser, G. Mitselmakher, T. Muller, 1995 .

Liquid ionization calorimetry with time-sampled signals

V. S. Panin, Upul J. Sonnadara, V. Radeka, 1994 .

Monte‐Carlo calculations of backscattered electrons at registration marks

D. Stephani, 1979 .

High‐precision automatic alignment procedure for vector scan e‐beam lithography

D. Stephani, E. Froeschle, 1978 .