M. O'loughlin

发表

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, IEEE Electron Device Letters.

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

10-kV, 123-mOcm2 4H-SiC power DMOSFETs

A. Agarwal, S. Ryu, S. Krishnaswami, 2004 .

10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETs

A. Agarwal, S. Krishnaswami, J. Richmond, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

New generation 6.5 kV SiC power MOSFET

Scott Allen, Edward Van Brunt, Brett Hull, 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

J. Richmond, R. Callanan, J. Palmour, 2009, 2009 IEEE Pulsed Power Conference.

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, International Symposium on Power Semiconductor Devices and IC's.

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

J. Casady, S. Ryu, B. Hull, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

High performance, ultra high voltage 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Development of 15 kV 4H-SiC IGBTs

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2012 .

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

David Grider, Lin Cheng, John W. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor

M. O'loughlin, A. Burk, S. Mani, 1997 .

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor

M. O'loughlin, A. Burk, H. Nordby, 1999 .

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

B. Hull, J. Richmond, A. Hefner, 2008 .

Ultra high voltage MOS controlled 4H-SiC power switching devices

C. W. Tipton, J. Casady, S. Ryu, 2015 .

High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MOSFETs): threshold voltage

M. O'loughlin, R. Krantz, W. Bloss, 1988 .

Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

M. O'loughlin, R. Stahlbush, N. Mahadik, 2014 .

SiC super GTO thyristor technology development: Present status and future perspective

Heather O'Brien, Aderinto Ogunniyi, C. Capell, 2011, 2011 IEEE Pulsed Power Conference.

Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

H. O'Brien, C. Scozzie, C. Capell, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

27 kV, 20 A 4H-SiC n-IGBTs

Lin Cheng, C. W. Tipton, John W. Palmour, 2015 .

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

A. Agarwal, J. Palmour, M. O'loughlin, 2013 .

Bulk Growth of Large Area SiC Crystals

J. Sumakeris, M. Paisley, A. Powell, 2016 .

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

J. Palmour, M. O'loughlin, A. Burk, 2016 .

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

J. Palmour, M. O'loughlin, A. Burk, 2012 .

Cross-sectional structure of carrot defects in 4H–SiC epilayers

J. Sumakeris, M. O'loughlin, S. Ha, 2004 .

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Alex Q. Huang, David E. Grider, Lin Cheng, 2014 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Long-wavelength GaAs quantum-well IR detectors: low-temperature performance characteristics

Michael J. O'Loughlin, Mary Rosenbluth, Frank C. De Lucia, 1990, Other Conferences.

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

John W. Palmour, H. Lendenmann, Marek Skowronski, 2006 .

Neon–methane and argon–methane isotropic interaction potentials from total differential cross sections

M. O'loughlin, Brian P. Reid, R. K. Sparks, 1985 .

Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation

Michael J. O'Loughlin, M. O'loughlin, 1987, IEEE Transactions on Nuclear Science.

Methane–methane isotropic interaction potential from total differential cross sections

M. O'loughlin, Brian P. Reid, R. K. Sparks, 1985 .

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

J. Sumakeris, M. Paisley, M. O'loughlin, 2007 .

Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition

J. Sumakeris, M. Paisley, M. O'loughlin, 2007 .

Lifetime-limiting defects in n− 4H-SiC epilayers

B. V. Shanabrook, J. Sumakeris, M. O'loughlin, 2006 .

Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Structure of Carrot Defects in 4H-SiC Epilayers

S. Ryu, J. Sumakeris, M. Paisley, 2006 .

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

SiC and GaN wide bandgap semiconductor materials and devices

S. Sriram, Anant K. Agarwal, R. C. Clarke, 1999 .

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

A. Agarwal, J. Palmour, M. O'loughlin, 2014, Journal of Electronic Materials.

Structure of the carrot defect in 4H-SiC epitaxial layers

Marek Skowronski, Pierre Ruterana, Mourad Benamara, 2005 .

Spheroid 3C inclusions in 8° off-axis 4H-SiC epilayers grown by chemical vapor deposition

J. Sumakeris, M. Paisley, M. O'loughlin, 2009 .

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

A. Agarwal, B. Hull, J. Sumakeris, 2008 .

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor

A. Powell, M. O'loughlin, A. Burk, 2014 .

SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers

M. Paisley, A. Powell, M. O'loughlin, 2006 .

Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor

M. Paisley, A. Powell, M. O'loughlin, 2005 .

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

M. Das, J. Palmour, J. Sumakeris, 2005 .

Silicon carbide materials for advanced power electronic devices

Michael J. O'Loughlin, M. O'loughlin, Burk Albert A, 2009, 2009 International Semiconductor Device Research Symposium.

Multi-Wafer VPE Growth of Highly Uniform SiC Epitaxial Layers

M. O'loughlin, A. Burk, H. Nordby, 1999 .

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2012 .

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

A. Agarwal, J. Palmour, M. O'loughlin, 2010 .

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

B. V. Shanabrook, J. Sumakeris, M. O'loughlin, 2006 .

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Qingchun Zhang, J. Richmond, B. Hull, 2008, IEEE Transactions on Electron Devices.

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

S. Ryu, B. Hull, J. Richmond, 2015 .

High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MODFETs)

M. O'loughlin, R. Krantz, W. Bloss, 1988 .

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

B. Hull, J. Sumakeris, M. O'loughlin, 2007 .

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2012 .

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.