M. Levinshtein

发表

The critical charge density of 4H-SiC thyristors

J. Palmour, M. Levinshtein, Sergey L. Rumyanetsev, 1998 .

Carrier mobility model for simulation of SiC-based electronic devices

M. Levinshtein, T. T. Mnatsakanov, L. Pomortseva, 2002 .

Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices

A. Agarwal, J. Palmour, M. Levinshtein, 2011 .

Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors

A. G. Tandoev, J. Palmour, M. Levinshtein, 2017 .

Transient collector modulation of 4H–SiC BJTs during switch-on process

J. Palmour, M. Levinshtein, V. Yuferev, 2016 .

Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors

J. Palmour, M. Levinshtein, Lin Cheng, 2014 .

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

M. Shur, A. Agarwal, J. Palmour, 2012 .

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

J. Palmour, M. Levinshtein, Ranbir Singh, 1999 .

Temperature dependence of turn-on processes in 4H–SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2001 .

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

J. Palmour, M. Levinshtein, Ranbir Singh, 2001 .

Current rise time constants in switch-on process of SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2002 .

On the transport equations in popular commercial device simulators

M. Levinshtein, T. T. Mnatsakanov, 2002 .

Steady-state and transient characteristics of 10 kV 4H-SiC diodes

J. Palmour, M. Levinshtein, Ranbir Singh, 2004 .

High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

V. A. Krivutsa, B. Hull, M. Das, 2005 .

Power bipolar devices based on silicon carbide

A. Agarwal, J. Palmour, M. Levinshtein, 2005 .

High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime

B. Hull, M. Das, J. Palmour, 2006 .

Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor

A. Agarwal, S. Ryu, J. Palmour, 2001 .

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

A. Agarwal, S. Krishnaswami, J. Palmour, 2006, IEEE Transactions on Electron Devices.

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

M. Shur, A. Agarwal, S. Ryu, 2009 .

Handbook Series on Semiconductor Parameters

M. Shur, M. Levinshtein, S. Rumyantsev, 1996 .

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

M. Shur, M. Levinshtein, S. Rumyantsev, 2001 .

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Michael S. Shur, Michael E. Levinshtein, Grigory Simin, 2000 .

Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

M. Levinshtein, N. Dyakonova, S. Karandashev, 2020, Semiconductor Science and Technology.

Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes

M. Levinshtein, N. Dyakonova, S. Karandashev, 2019, Semiconductor Science and Technology.

Carrier mobility model for GaN

Michael E. Levinshtein, Grigory Simin, S. N. Yurkov, 2003 .

High voltage SiC diodes with small recovery time

Pavel Ivanov, Michael E. Levinshtein, S. N. Yurkov, 2000 .

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Michael S. Shur, F. Teppe, N. Dyakonova, 2005 .

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

M. Levinshtein, N. Dyakonova, S. Karandashev, 2018 .

Generation-recombination noise in MOSFETs

Sergey L. Rumyantsev, M. Jamal Deen, M E Levinshtein, 1999 .

1/f noise in strongly doped n-type GaAs under band-band illumination conditions

M. Levinshtein, F. Pascal, S. Rumyantsev, 1997 .

Extended defect system as a main source of non‐radiative recombination in InGaN/GaN LEDs

N. M. Shmidt, M. Levinshtein, N. Averkiev, 2013 .

Specific features of dynamic injection and base layer modulation processes in power n+-p-p+ diodes

A. G. Tandoev, M. Levinshtein, T. T. Mnatsakanov, 2007 .

Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

N. M. Shmidt, V. Petrov, M. Levinshtein, 2012 .

Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift

A. G. Tandoev, M. Levinshtein, T. T. Mnatsakanov, 2013 .

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

A. Agarwal, S. Ryu, J. Palmour, 2004 .

Surge current capabilities and isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

J. Palmour, M. Levinshtein, Q. Zhang, 2015 .

1/f noise in forward biased high voltage 4H-SiC Schottky diodes

N. M. Shmidt, J. Palmour, M. Levinshtein, 2014 .

Low frequency noise in 4H-SiC BJTs

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

M. Shur, B. Hull, M. Das, 2008 .

Sic Materials and Devices: Volume 2

M. Shur, M. Levinshtein, S. Rumyantsev, 2007 .

Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

M. Levinshtein, G. Simin, M. Khan, 2003 .

Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride

M. Shur, M. Levinshtein, M. Khan, 2002 .

Electrical properties of the conducting polydiacetylene poly-1,1,6,6-tetraphenylhexadiinediamine

M. Levinshtein, S. Rumyantsev, V. Marikhin, 1997 .

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs

L. Fursin, M. Levinshtein, A. Lebedev, 2019, Semiconductors.

The relation between the critical exponents of percolation theory

M. Shur, M. Levinshtein, B. Shklovskii, 1975 .

Specific features of quasineutral carrier transport modes in semiconductors and semiconductor structures

A. G. Tandoev, M. Levinshtein, T. T. Mnatsakanov, 2009 .

Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Tunneling mechanism of the 1/f noise in GaN/AlGaN heterojunction field-effect transistors

M. Shur, M. Levinshtein, S. Rumyantsev, 2005 .

The effect of a transverse magnetic field on 1/f noise in graphene

M. Shur, M. Goiran, M. Levinshtein, 2013 .

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

A. Agarwal, M. Das, J. Palmour, 2004 .

Randomness and Earth climate variability

M. Levinshtein, V. Dergachev, A. Dmitriev, 2015, 1502.04480.

Transient processes in high-voltage silicon carbide bipolar-junction transistors

A. Agarwal, J. Palmour, M. Levinshtein, 2013 .

Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

A. G. Tandoev, J. Palmour, M. Levinshtein, 2017 .

Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection

A. G. Tandoev, J. Palmour, M. Levinshtein, 2013 .

Physical limitations of the diffusive approximation in semiconductor device modeling

A. G. Tandoev, M. Levinshtein, T. T. Mnatsakanov, 2011 .

Isothermal current–voltage characteristics of high-voltage silicon carbide rectifier p–i–n diodes at very high current densities

B. Hull, M. Das, J. Palmour, 2007 .

On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 1998 .

Nanomaterial disordering in AlGaN/GaN UV LED structures

N. M. Shmidt, Y. Makarov, M. Kulagina, 2015 .

On the thermal stability of high-voltage rectifier diodes

J. Palmour, M. Levinshtein, T. T. Mnatsakanov, 2006 .

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs

A. A. Usikova, M. Levinshtein, N. Dyakonova, 2021 .

Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes

M. Levinshtein, N. Dyakonova, S. Karandashev, 2018, Semiconductor Science and Technology.

Broadening of noise spectra in semiconductors and the 1/f1.5 problem

M. Levinshtein, N. Dyakonova, S. Rumyantsev, 1995 .

High hole lifetime (3.8 /spl mu/s) in 4H-SiC diodes with 5.5 kV blocking voltage

J. Palmour, M. Levinshtein, O. Kordina, 1999 .

Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode

J. Palmour, M. Levinshtein, V. Yuferev, 2017 .

Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

B. Hull, M. Das, J. Palmour, 2008 .

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

M. Shur, M. Levinshtein, A. Shchepetov, 2007 .

The critical charge density in high voltage 4H-SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2003 .

Forward-current-generated donor centers in high-voltage 4H-SiC based p-i-n diodes

A. Agarwal, M. Das, J. Palmour, 2011 .

Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions

M. Shur, A. Agarwal, M. Das, 2011, 2011 21st International Conference on Noise and Fluctuations.

Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures

A. G. Tandoev, J. Palmour, M. Levinshtein, 2011 .

Generation-recombination noise in forward biased 4H-SiC p-n diodes

M. Shur, D. Veksler, B. Hull, 2006 .

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

M. Das, J. Palmour, M. Levinshtein, 2005 .

Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

The critical charge concept for 4H-SiC-based thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2003 .

Parameters of Electron-Hole Scattering in Silicon Carbide

A. G. Tandoev, J. Palmour, M. Levinshtein, 2003 .

Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

M. Shur, A. Agarwal, S. Ryu, 2001 .

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

V. A. Krivutsa, B. Hull, M. Das, 2006 .

Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

M. Shur, N. Pala, M. Levinshtein, 2003 .

Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes

M. Levinshtein, N. Dyakonova, S. Karandashev, 2022, Infrared Physics & Technology.

Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection

A. G. Tandoev, J. Palmour, M. Levinshtein, 2013, Semiconductors.

Getting to Know Semiconductors

M. Shur, M. Levinshtein, G. Simin, 1992 .

MATERIALS PROPERTIES OF NITRIDES: SUMMARY

M. Shur, M. Levinshtein, S. Rumyantsev, 2004 .

Critical indexes of conductivity in two-dimensional percolation problems

M. Levinshtein, 1977 .

Advanced experimental methods for noise research in nanoscale electronic Devices

Josef Sikula, M. Levinshtein, J. Sikula, 2005 .

Low-frequency noise in GaN/GaAlN heterojunctions

M. Shur, M. Levinshtein, W. Knap, 1998 .

Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanism.

J. A. Delgado Notario, M. Levinshtein, A. Balandin, 2021, Nanoscale.

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Breakdown Phenomena in Semiconductors And Semiconductor Devices

Juha Kostamovaara, Sergey N. Vainshtein, Michael E. Levinshtein, 2005 .

Simple method to determine the main Gunn domain parameters

M. Levinshtein, G. Simin, 1980 .

Ternary and quaternary III-V compounds

Michael S. Shur, Sergey L. Rumyantsev, M. Shur, 1999 .

Two channels of non-radiative recombination in InGaN/GaN LEDs

Eugene B. Yakimov, Michael E. Levinshtein, A. E. Chernyakov, 2009 .

THE BIRTH, LIFE AND DEATH OF THE ELECTRON AND HOLE

M. Levinshtein, G. Simin, 1992 .

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

Michael S. Shur, Michael E. Levinshtein, Sergey L. Rumyantsev, 1998 .

On the Hooge relation in semiconductors and metals

M. Levinshtein, S. Rumyantsev, A. Dmitriev, 2009 .

Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb

Michael S. Shur, Sergey L. Rumyantsev, M. Shur, 1996 .

Changes in the optical properties of conducting polydiacetylene THD brought on by doping

M. Levinshtein, V. Marikhin, E. Guk, 1998 .

Noise spectroscopy of local surface levels in semiconductors

J. Palmour, M. Levinshtein, S. Rumyantsev, 2000 .

Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold

M. Shur, N. Pala, M. Levinshtein, 2006 .

Semiconductor technology : processing and novel fabrication techniques

M. Shur, M. Levinshtein, 1997 .

GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

M. Shur, N. Pala, M. Levinshtein, 2004 .

On the low frequency noise mechanisms in GaN/AlGaN HFETs

M. Levinshtein, G. Simin, M. Khan, 2003 .

Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors

M. Shur, N. Pala, X. Hu, 2002 .

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

M. Shur, N. Pala, M. Levinshtein, 2001, The Random and Fluctuating World.

Drift mobility of electrons in AlGaN/GaN MOSHFET

M. Shur, M. Levinshtein, G. Simin, 2001 .

The impact of parasitic inductance on the dV/dt ruggedness of 4H-SiC Schottky diodes

M. Levinshtein, P. Ivanov, 2021, Microelectronics Reliability.

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

M. Levinshtein, A. Lebedev, P. Ivanov, 2019, Semiconductors.

Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes

B. Hull, M. Das, J. Palmour, 2007 .

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

M. Shur, S. Dhar, A. Agarwal, 2012 .

Si-like low-frequency noise characteristics of 4H-SiC MOSFETs

M. Shur, S. Dhar, A. Agarwal, 2011 .

Noise spectroscopy of local levels in semiconductors

M. Levinshtein, S. Rumyantsev, 1994 .

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

J. Palmour, M. Levinshtein, S. Rumyantsev, 2018, Materials Science Forum.

SiC materials and devices

M. Shur, M. Levinshtein, S. Rumyantsev, 2006 .

Low Frequency Noise in n-GaN with High Electron Mobility

M. Shur, D. Look, M. Levinshtein, 1999 .

SiC materials and devices

Michael S. Shur, Sergey L. Rumyantsev, M. Shur, 2006 .

Permittivity anomaly in metal-dielectric transitions. Theory and simulation

M. Shur, M. Levinshtein, V. Dubrov, 1976 .

Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates

Michael S. Shur, Michael E. Levinshtein, S. L. Rumyantsev, 2000 .

Low-frequency noise in n-GaN

M. Levinshtein, W. Knap, S. Contreras, 1998 .

Low Frequency Noise in Gallium Nitride Field Effect Transistors

M. Shur, M. Levinshtein, G. Simin, 2002 .

Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

M. Levinshtein, N. Dyakonova, S. Karandashev, 2020 .

Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

M. Levinshtein, A. Lebedev, V. Yuferev, 2021 .

Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes

M. Levinshtein, A. Lebedev, A. Ivanov, 2021 .

Low frequency noise in 4H-SiC BJTs

Anant K. Agarwal, Michael E. Levinshtein, John W. Palmour, 2004, SPIE International Symposium on Fluctuations and Noise.

Parameters of electron–hole scattering in silicon carbide

A. G. Tandoev, J. Palmour, M. Levinshtein, 2003 .

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2000 .

Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature

D. A. Malevsky, M. Levinshtein, A. Lebedev, 2022, Semiconductors.

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

A. Agarwal, M. Das, J. Palmour, 2011 .

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

V. A. Krivutsa, B. Hull, M. Das, 2007 .

Carrier lifetime measurements in 10 kV 4H-SiC diodes

Pavel Ivanov, Michael E. Levinshtein, John W. Palmour, 2003 .

Carrier lifetime "paradoxes" in high-voltage 4H-SiC diodes

J. Palmour, M. Levinshtein, R. Singh, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Low-frequency noise in GaN nanowire transistors

Michael S. Shur, Albert V. Davydov, Abhishek Motayed, 2008 .

Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

Pavel Ivanov, Anant K. Agarwal, Sei-Hyung Ryu, 2002 .

Optical Switch-On of Silicon Carbide Thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

A. G. Tandoev, J. Palmour, M. Levinshtein, 2016 .

Modulation waves of charge carriers in n- and p-type semiconductor layers

A. G. Tandoev, M. Levinshtein, T. T. Mnatsakanov, 2011 .

Nonconventional quasineutral mode of carrier transport in semiconductors and semiconductor structures

A. G. Tandoev, M. Levinshtein, T. T. Mnatsakanov, 2009 .

Transient injection and fast switch on in p‐i‐n diodes

A. G. Tandoev, J. Palmour, M. Levinshtein, 2006 .

A. G. Tandoev, J. Palmour, M. Levinshtein, 2005 .

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

Collector modulation in high-voltage bipolar transistor in the saturation mode: Analytical approach

M. Levinshtein, V. Yuferev, A. Dmitriev, 2018 .

Low frequency noise in degenerate semiconductors

M. Shur, M. Levinshtein, S. Rumyantsev, 2001 .

Nature of the volume 1/f noise in the main materials of semiconductor electronics: Si, GaAs, and SiC

M. Levinshtein, 1997 .

4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage

O. Kordina, J. Palmour, M. Levinshtein, 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).

Low frequency noise in 4H silicon carbide

J. Palmour, M. Levinshtein, S. Rumyantsev, 1997 .

LOW-FREQUENCY NOISE IN 4H-SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

J. Palmour, M. Levinshtein, G. Simin, 1996 .

Turn-on process in 4H-SiC thyristors

J. Palmour, M. Levinshtein, Sergey L. Rumyanetsev, 1997 .

Generation-recombination noise in GaN and GaN-based devices

Michael S. Shur, Remis Gaska, Michael E. Levinshtein, 2003, SPIE International Symposium on Fluctuations and Noise.

Low frequency noise in GaN-based transistors

M. Shur, N. Pala, M. Levinshtein, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Generation-recombination noise in forward-biased 4H-SiC p-n diode

Michael S. Shur, Dmitry Veksler, Michael E. Levinshtein, 2007, SPIE International Symposium on Fluctuations and Noise.

Noise and Interface Density of Traps in 4 H‐SiC MOSFETs

M. Shur, A. Agarwal, S. Ryu, 2009 .

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Michael S. Shur, Wojciech Knap, Michael E. Levinshtein, 2002 .