C. Weitzel

发表

Silicon carbide high-power devices

M. Bhatnagar, J. Palmour, C. Weitzel, 1996 .

RF power amplifiers for wireless communications

C. Weitzel, S. Cripps, 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

High Power and High Frequency Silicon Carbide Devices

J. Palmour, C. Weitzel, C. Carter, 1994 .

Evaluation of AlGaN-GaN HFETs up to 750/spl deg/C

K. Ebeling, C. Weitzel, E. Kohn, 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).

Effect of Device Temperature on RF FET Power Density

K. Moore, Charles E. Weitzel, M. Bhatnagar, 1997 .

Rapid thermal annealing of si implanted gaas

C. Weitzel, W. Paulson, R. Legge, 1987 .

Silicon Carbide High Frequency Devices

C. Weitzel, 1997 .

4H-SiC MESFET's on high resistivity substrates with 30 GHz f/sub max/

J. Palmour, C. Weitzel, C. Carter, 1995, 1995 53rd Annual Device Research Conference Digest.

C-MOS/SIS—Using selective SF6etching of {1102} sapphire

C. Weitzel, 1978, IEEE Transactions on Electron Devices.

4H-silicon carbide mesfet with 2.8 W/mm rf power density

J. Palmour, C. Weitzel, C. Carter, 1994, 52nd Annual Device Research Conference.

Sapphire Substrate Misorientation and SOS/MOS Transistor Performance

R. T. Smith, C. Weitzel, 1977 .

Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers

C. Weitzel, B. Green, B. Skromme, 2010, IEEE Transactions on Electron Devices.

Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

M. Bhatnagar, C. Weitzel, B. Skromme, 1999 .

Changes in the photoconductivity of sputtered films of cadmium sulphide resulting from sulphur dioxide chemisorption

C. Weitzel, L. Monteith, 1974 .

Changes in the photoconductivity of sputtered films of cadmium sulphide resulting from oxygen chemisorption

C. Weitzel, L. Monteith, 1973 .

Influence of sapphire substrate orientation on SOS crystalline quality and SOS/MOS transistor mobility

R. T. Smith, C. Weitzel, 1982 .

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz

J. Palmour, C. Weitzel, C. Carter, 1994, IEEE Electron Device Letters.

Comparison of SiC, GaAs, and Si RF MESFET power densities

C. Weitzel, C.E. Weitzel, 1995, IEEE Electron Device Letters.

4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

S. Allen, J. Palmour, C. Weitzel, 1997, IEEE Electron Device Letters.

Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz

J. Palmour, C. Weitzel, C. Carter, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Silicon‐on‐Sapphire Crystalline Perfection and MOS Transistor Mobility

R. T. Smith, C. Weitzel, 1978 .

Degradation of GaAs MESFETS in 18 megohm-cm H2O

C. Weitzel, T. Miers, 1981, IEEE Electron Device Letters.

A Review of GaAs MESFET Gate Electrode Fabrication Technologies

C. Weitzel, D. Doane, 1986 .

Device and technology evolution for Si-based RF integrated circuits

H.S. Bennett, J.C. Costa, P.E. Cottrell, 2005, IEEE Transactions on Electron Devices.

Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications

Bin Zhao, H.S. Bennett, J.C. Costa, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Novel SiC accumulation-mode power MOSFET

H. B. Harrison, Sima Dimitrijev, C. E. Weitzel, 2001 .

RF power devices for wireless communications

C.E. Weitzel, C. Weitzel, 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).

Accumulation-Mode SiC Power MOSFET Design Issues

M. Bhatnagar, C. Weitzel, Y. Wang, 2000 .