C. Carter

发表

M. Bhatnagar, J. Palmour, C. Weitzel, 1996 .

Kinetics and Mechanisms of High‐Temperature Creep in Silicon Carbide: III, Sintered α‐Silicon Carbide

C. Carter, J. Lane, R. Davis, 1988 .

J. Palmour, C. Carter, R. Singh, 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

Progress in the industrial production of SiC substrates for semiconductor devices

J. Palmour, Ranbir Singh, C. Carter, 2001 .

Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC

C. Carter, H. Kong, J. Edmond, 1993 .

High Power and High Frequency Silicon Carbide Devices

J. Palmour, C. Weitzel, C. Carter, 1994 .

SiC device technology: remaining issues

John W. Palmour, A. V. Suvorov, Calvin H. Carter, 1997 .

Silicon carbide MESFETs for high-power S-band applications

J. Palmour, C. Carter, S. Allen, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

Electrical Characterization of PiN Diode Structures in 6H-SiC

C. T. Gardner, M. Melloch, J. Cooper, 1992 .

Digital M-H plotter for low-coercivity metallic glasses

M.R.J. Gibbs, C H Carter, C. Carter, 1988 .

Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

J. Sumakeris, C. Carter, M. Dudley, 1997 .

Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals

Michael Dudley, Shaoping Wang, Calvin H. Carter, 1994 .

Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

C. Carter, M. Dudley, D. Asbury, 1993 .

High-purity semi-insulating 4H-SiC for microwave device applications

A. Powell, C. Carter, R. Glass, 2003 .

5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

J. Palmour, M. Paisley, C. Carter, 1998 .

Applications for 6H-Silicon Carbide Devices

J. Palmour, C. Carter, H. Kong, 1992 .

4H-SiC MESFET's on high resistivity substrates with 30 GHz f/sub max/

J. Palmour, C. Weitzel, C. Carter, 1995, 1995 53rd Annual Device Research Conference Digest.

The status of SiC bulk growth from an industrial point of view

C. Carter, R. Glass, S. Müller, 2000 .

Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide. II. Chemically Vapor Deposited,

Robert F. Davis, C. H. Carter, C. Carter, 1984 .

Deformation Mechanisms in Various Forms of Sic and the Implications of these Results Regarding Densification in B-Containing Material

C. Carter, J. Lane, R. Davis, 1988 .

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

J. Palmour, C. Carter, R. Davis, 1987 .

4H-silicon carbide mesfet with 2.8 W/mm rf power density

J. Palmour, C. Weitzel, C. Carter, 1994, 52nd Annual Device Research Conference.

Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

J. Palmour, C. Carter, R. Davis, 1985 .

Transmission electron microscopy of process-induced defects in β -SiC thin films

S. Nutt, C. Carter, R. Davis, 1986 .

Structure and Chemistry of Interfaces in Silicon Carbide-Containing Materials

S. Nutt, C. Carter, R. Davis, 1987 .

Demonstrating the potential of 6h-silicon carbide for power devices

J. Palmour, C. Carter, J. Edmond, 1993, 51st Annual Device Research Conference.

Progress in SiC Materials and Microwave Devices

J. Palmour, C. Carter, S. Allen, 1999 .

Occurrence and Distribution of Boron‐Conitaining Phases in Sintered ş‐Silicon Carbide

C. Carter, R. Davis, K. More, 1986 .

THE OCCURRENCE AND BEHAVIOR OF DISLOCATIONS DURING PLASTIC DEFORMATION OF SELECTED TRANSITION METAL AND SILICON CARBIDES

C. Carter, R. Davis, J. Bentley, 1984 .

Kinetics and Mechanisms of High‐Temperature Creep in Silicon Carbide: I, Reaction‐Bonded

C. Carter, R. Davis, J. Bentley, 1984 .

Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon

C. Carter, J. Wortman, W. Maszara, 1984 .

High‐temperature, multi‐atmosphere, constant stress compression creep apparatus

C. Carter, R. Davis, C. A. Stone, 1980 .

Direct evidence of micropipe-related pure superscrew dislocations in SiC

C. Carter, M. Dudley, W. Vetter, 1999 .

White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

Michael Dudley, Wei Huang, Shaoping Wang, 1995 .

A Kikuchi map for 6H α-SiC

C. Carter, J. Lane, R. Davis, 1986 .

SiC-Seeded Crystal Growth

C. Carter, R. Glass, V. Tsvetkov, 1997 .

Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image

C. Carter, M. Dudley, W. Si, 1999 .

6H–silicon carbide devices and applications

John W. Palmour, Hua-Shuang Kong, John A. Edmond, 1993 .

Kinetics and Mechanisms of Constant Stress Creep in the Non-Oxide Ceramics of SiC, SiC Whisker-Reinforced Si 3 N 4 Composites and AIN

C. Carter, J. Lane, R. Davis, 1995 .

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

J. Palmour, C. Carter, R. Davis, 1988 .

Influence of Rapid Thermal Annealing on Shallow BF 2 Implantation into Pre-Amorphized Silicon

Jun Liu, V. Ozguz, C. Carter, 1983 .

Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory

Michael Dudley, Weimin Si, C. Carter, 1997 .

SiC seeded crystal growth

C. Carter, R. Glass, V. Tsvetkov, 1997 .

Effects of annealing on carrier lifetime in 4H-SiC

R. Gutmann, M. Das, C. Carter, 2006 .

In 0 N 0 Annual Progress Report The Growth of Gallium Nitride Films via the Innovative Technique of Atomic Layer Epitaxy

M. Paisley, C. Carter, N. Carolina., 2022 .

Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates

R. Gutmann, C. Carter, J. Borrego, 2007 .

ELECTRIC BREAKDOWN IN GAN P-N JUNCTIONS

Vladimir Dmitriev, Calvin H. Carter, N. I. Kuznetsov, 1996 .

Electric Breakdown in Nitride PN Junctions

C. Carter, K. Irvine, N. Kuznetsov, 1995 .

Progress in SiC : from material growth to commercial device development

J. Palmour, C. Carter, S. Allen, 1999 .

High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

C. Carter, R. Glass, S. Müller, 2002 .

GROWTH OF SUBSTRATES

A. Powell, C. Carter, S. Müller, 2007 .

A Theoretical and Empirical Perspective of SiC Bulk Growth

C. Carter, R. Glass, V. Tsvetkov, 1998 .

Substrate and epitaxial issues for SiC power devices

Michael G. Spencer, John W. Palmour, J. Palmour, 2002 .

Characterization of shallow semiconductor interfaces

C. Carter, W. Maszara, G. Rozgonyi, 1984 .

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz

J. Palmour, C. Weitzel, C. Carter, 1994, IEEE Electron Device Letters.

GROWTH OF SiC SUBSTRATES

Adrian Powell, Calvin H. Carter, A. Powell, 2006 .

Carbure de silicium semi-isolant sans vanadium dominant

C. Carter, V. Tsvetkov, M. Brady, 2000 .

Growth and Characterization of Semiconductor Silicon Carbide for Electronic and Optoelectronic Applications: An Industrial Perspective

C. Carter, R. Glass, V. Tsvetkov, 2001 .

Determination of Burgers Vector of Screw Dislocations in 6H-SiC Single Crystals by Synchrotron White Beam X-Ray Topography

C. Carter, M. Dudley, R. Glass, 1996 .

4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

S. Allen, J. Palmour, C. Weitzel, 1997, IEEE Electron Device Letters.

Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz

J. Palmour, C. Weitzel, C. Carter, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Diamond, Sic and Nitride Wide Bandgap Semiconductors: Symposium Held April 4-8, 1994, San Francisco, California, U.S.A.

Gennady Gildenblat, Calvin H. Carter, C. Carter, 1994 .

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

Adrian Powell, C. H. Carter, J. Sumakeris, 2006 .

Quantitative analysis of screw dislocations in 6H−SiC single crystals

C. Carter, M. Dudley, R. Glass, 1997 .

6H-Silicon Carbide Light Emitting Diodes and UV Photodiodes

Hua-Shuang Kong, John A. Edmond, Calvin H. Carter, 1997 .

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

M. Das, J. Palmour, J. Sumakeris, 2004 .

Carbure de silicium semi-isolant sans domination de vanadium

C. Carter, V. Tsvetkov, M. Brady, 2002 .

Semi-insulating silicon carbide without vanadium domain.

C. Carter, V. Tsvetkov, M. Brady, 2000 .

Silicon carbide JFET radiation response

R. E. Oakley, J. Palmour, C. Carter, 1992 .

Spontaneous and stimulated emission from photopumped GaN grown on SiC

Vladimir Dmitriev, John A. Edmond, V. I. Nikolaev, 1995 .

The Occurrence of Defects in Silicon Carbides as a Result of Processing Mode and Applied Stress

C. Carter, R. Davis, J. Bentley, 1983 .

A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications

M. Melloch, J. Cooper, J. Palmour, 1994, IEEE Electron Device Letters.

Contrast Mechanism in Superscrew Dislocation Images on Synchrotron Back-Reflection Topographs

C. Carter, M. Dudley, W. Vetter, 1998 .

X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films

Michael Dudley, Hua-Shuang Kong, Calvin H. Carter, 1994 .

Schottky barriers on n-GaN grown on SiC

C. Carter, K. Irvine, E. Kalinina, 1996 .

High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC

C. Carter, H. Kong, J. Edmond, 1992 .