H. Matsunami

T. Fuyuki, H. Matsunami, H. Yoshida, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaP

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1994 .

In-situ reflection high-energy electron diffraction observation of laser-triggered GaP growth in chemical beam epitaxy

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1994 .

Laser decomposition of surface adsorbed metalorganics in MOMBE growth of GaP

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1994 .

Reflection high‐energy electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy

H. Matsunami, P. Vaccaro, M. Yoshimoto, 1993 .

Low-hydrogen-concentration a-Si:H deposited by direct photo-CVD

T. Fuyuki, H. Matsunami, T. Shirafuji, 1991 .

Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique

T. Fuyuki, H. Matsunami, T. Saitoh, 1990 .

Electrical Properties of Undoped p-CdSb at Low Temperatures

H. Matsunami, Tetsuro Tanaka, Y. Nishihara, 1969 .

Negative Magnetoresistance in Ag Doped p-CdSb

H. Matsunami, Tetsuro Tanaka, Hiroshi Suzuki, 1967 .

High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition

H. Matsunami, T. Kimoto, S. Nakazawa, 2002 .

High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

H. Matsunami, T. Kimoto, K. Fujihira, 2002 .

Heteroepitaxial Growth of Sic on Si - Highly Mismatched System -

H. Matsunami, 1988 .

Anisotropy in breakdown field of 4H–SiC

H. Matsunami, T. Kimoto, Shun-ichi Nakamura, 2002 .

SiC Schottky Barrier Diodes with High Blocking Voltage of 1kV

H. Matsunami, T. Kimoto, T. Urushidani, 1993 .

IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

H. Matsunami, S. Nishino, H. Ono, 1981, IEEE Transactions on Electron Devices.

Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)

H. Matsunami, T. Kimoto, K. Hashimoto, 2003 .

Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes

H. Matsunami, T. Kimoto, M. Inoue, 1997 .

Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer

H. Matsunami, M. Yoshimoto, Y. Watanabe, 1998 .

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

H. Matsunami, M. Yoshimoto, J. Saraie, 1998 .

Fundamentals of luminescence

H. Matsunami, 2018, Fundamentals of Phosphors.

Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide

H. Matsunami, Tetsuro Tanaka, M. Iwami, 1971 .

Characterization of crystalline silicon grown by plasma-enhanced CVD for thin-film solar cells

T. Fuyuki, H. Matsunami, K. Kurobe, 2001 .

Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride

H. Matsunami, S. Kamiyama, H. Amano, 2001 .

Step‐Controlled Epitaxial Growth of High‐Quality SiC Layers

Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami, 1997 .

ZrB2 Substrate for Nitride Semiconductors

H. Matsunami, S. Kamiyama, H. Amano, 2003 .

Polytype‐controlled single‐crystal growth of silicon carbide using 3C→6H solid‐state phase transformation

H. Matsunami, W. Yoo, 1991 .

High‐quality 4H‐SiC homoepitaxial layers grown by step‐controlled epitaxy

H. Matsunami, T. Kimoto, A. Itoh, 1994 .

Single crystal growth of hexagonal SiC on cubic SiC by intentional polytype control

H. Matsunami, S. Nishino, W. Yoo, 1990 .

Polytype Change of Silicon Carbide at High Temperatures

H. Matsunami, S. Nishino, W. Yoo, 1989 .

Growth of 6H-SiC on CVD-Grown 3C-SiC Substrates

H. Matsunami, W. Yoo, 1989 .

Dynamic reflection high‐energy electron diffraction observation of 3C‐SiC(001) surface reconstruction under Si2H6 beam irradiation

T. Fuyuki, H. Matsunami, T. Yoshinobu, 1991 .

Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN

H. Matsunami, T. Kimoto, J. Suda, 2003 .

Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy

H. Matsunami, J. Suda, 2002 .

SiO2 Film Deposition by KrF Excimer Laser Irradiation

H. Matsunami, S. Nishino, H. Honda, 1986 .

Detailed characterization of deep centers in CdTe: Photoionization and thermal ionization properties

Hiroyuki Matsunami, H. Matsunami, T. Takebe, 1982 .

Electro‐optic effects of PLZT thin films

M. Ishida, H. Matsunami, Tetsuro Tanaka, 1977 .

Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces

H. Matsunami, T. Kimoto, 1994 .

Characterization of hydrogenated amorphous silicon-carbon films deposited by hybrid-plasma CVD

T. Fuyuki, H. Matsunami, T. Fujii, 1994 .

SiC blue LED's by liquid-phase epitaxy

H. Matsunami, M. Ikeda, A. Suzuki, 1977, IEEE Transactions on Electron Devices.

Photoelectric Properties of a-Si:H with Low Gap-States Deposited by VUV Photo-CVD

T. Fuyuki, H. Matsunami, T. Shirafuji, 1991 .

Gas phase reactions diagnosed by mass analysis in photo-assisted chemical vapor deposition of silicon nitride

H. Matsunami, M. Yoshimoto, K. Takubo, 1994 .

Cd3As2 Thin Film Magnetoresistor

H. Matsunami, Tetsuro Tanaka, 1971 .

Preparation of a High Mobility Thin Film of Cd3As2

H. Matsunami, Tetsuro Tanaka, M. Iwami, 1968 .

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

Tsunenobu Kimoto, Hiroyuki Matsunami, Adolf Schöner, 1997 .

Metalorganic molecular‐beam epitaxy of InGaP

H. Matsunami, Shigehisa Tanaka, K. Ozasa, 1989 .

Lattice-Matched LPE Growth of In1-xGaxP1-yAsy Layers on (100) GaAs Substrates

H. Matsunami, H. Kyuragi, A. Suzuki, 1980 .

Crystal growth of SiC II. Epitaxial growth

H. Matsunami, T. Kimoto, 2001 .

Growth mechanism of 6H-SiC in step-controlled epitaxy

H. Matsunami, T. Kimoto, H. Nishino, 1993 .

LPE Growth and Photoluminescence of In1-xGaxP1-yASy, on GaAs

H. Matsunami, H. Kyuragi, A. Suzuki, 1981 .

A Reproducible LPE Growth of High-Quality In1-xGaxP1-yAsy Layers on GaAs by the Control of Phosphorus Vapor on the Substrate

H. Matsunami, T. Murakami, A. Suzuki, 1982 .

Photoluminescence of lattice‐matched In1−xGaxP1−yAsy layers on GaAs

H. Matsunami, H. Kyuragi, A. Suzuki, 1980 .

7 – SILICON CARBIDE FILMS

H. Matsunami, 1985 .

Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy

Hiroyuki Matsunami, Tomoaki Hatayama, Takashi Fuyuki, 1997 .

Carrier transport in a-Si:H/a-Si1−xCx:H ultra-thin multilayers

T. Fuyuki, H. Matsunami, M. Yoshimoto, 1989 .

Epitaxial growth and electric characteristics of cubic SiC on silicon

H. Matsunami, S. Nishino, H. Suhara, 1987 .

Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure

H. Matsunami, H. Ashida, A. Suzuki, 1982 .

Electrical activation of high-concentration aluminum implanted in 4H-SiC

H. Matsunami, T. Kimoto, G. Pensl, 2004 .

Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method

H. Matsunami, Tetsuro Tanaka, M. Ikeda, 1980 .

Structure analysis of a-Si1-xCx:H with dominant tetrahedral Si-C bonds deposited by hybrid-plasma chemical vapor deposition

T. Fuyuki, H. Matsunami, T. Fujii, 1997 .

4H‐SiC/6H‐SiC interface structures studied by high‐resolution transmission electron microscopy

H. Matsunami, T. Kimoto, R. Shimizu, 1993 .

Analysis of EBIC considering the generation distribution of minority carriers

T. Fuyuki, H. Matsunami, T. Tanaka, 1980 .

The influence of the generation volume of minority carriers on EBIC

T. Fuyuki, H. Matsunami, T. Tanaka, 1980 .

Progress in epitaxial growth of SiC

H. Matsunami, 1993 .

Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy

T. Fuyuki, H. Matsunami, Y. Tarui, 1992 .

Effect of misfit strain on physical properties of InGaP grown by metalorganic molecular‐beam epitaxy

H. Matsunami, Shigehisa Tanaka, K. Ozasa, 1990 .

Atomic layer epitaxy controlled by surface superstructures in SiC

T. Fuyuki, H. Matsunami, T. Yoshinobu, 1993 .

Solid-State Phase Transformation in Cubic Silicon Carbide

H. Matsunami, W. Yoo, 1991 .

Preferential Growth Mode of Cubic GaN by Metalorganic Molecular Beam Epitaxy on Sapphire (0001) Substrates

H. Matsunami, J. Suda, T. Masuda, 1999 .

GaN growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy

H. Matsunami, M. Yoshimoto, H. Itoh, 1998 .

Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers

T. Fuyuki, H. Matsunami, K. Hosotani, 1997 .

Compositional analysis of semiconductor heterojunctions: Structure of SiC (thin buffer layer)/Si(100) system

H. Matsunami, K. Shibahara, T. Koshikawa, 1988 .

Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy

T. Fuyuki, H. Matsunami, T. Hatayama, 1995 .

Single crystal growth of SiC and electronic devices

Akira Itoh, Hiroyuki Matsunami, H. Matsunami, 1997 .

Low-temperature interface modification by hydrocarbon radicals in heteroepitaxy of 3C-SiC on Si clean surface

T. Fuyuki, H. Matsunami, T. Hatayama, 1997 .

Initial Stage of Heteroepitaxial Growth of SiC on Si by Gas Source MBE Using Hydrocarbon Radicals

T. Fuyuki, H. Matsunami, T. Hatayama, 1993 .

Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy

T. Fuyuki, H. Matsunami, T. Yoshinobu, 1992 .

Atomic level control in gas source MBE growth of cubic SiC

T. Fuyuki, H. Matsunami, H. Shiomi, 1990 .

Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

T. Fuyuki, H. Matsunami, H. Shiomi, 1989 .

High-temperature surface structure transitions and growth of α-SiC (0001) in ultrahigh vacuum

T. Fuyuki, H. Matsunami, T. Kimoto, 1999 .

Heterointerface control and epitaxial growth of 3C-SiC on Si by gas source molecular beam epitaxy

T. Fuyuki, H. Matsunami, T. Hatayama, 1997 .

Quantitative Analysis for CH 3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface

T. Fuyuki, H. Matsunami, T. Hatayama, 1995 .

Electrical Properties of Undoped and Ion-Implanted Cubic SiC Grown on Si(100) by Chemical Vapor Deposition

H. Matsunami, K. Shibahara, S. Nishino, 1989 .

Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy

H. Matsunami, J. Suda, M. Yoshimoto, 1998 .

Surface diffusion lengths of adatoms on 6H‐SiC{0001} faces in chemical vapor deposition of SiC

H. Matsunami, T. Kimoto, 1995 .

Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition

Hiroyuki Matsunami, Shigehiro Nishino, Akira Ibaraki, 1980 .

Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement

H. Matsunami, T. Kimoto, H. Matsuura, 1999 .

A-Si:H Deposited by Direct Photo-Cvd Using a Microwave-Excited Xe Lamp

T. Fuyuki, H. Matsunami, T. Shirafuji, 1990 .

Electrical and photoelectric properties of a-Si:H deposited by direct photo-CVD (for solar cell applications)

H. Matsunami, T. Fuyuki, M. Yoshimoto, 1988, Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference.

Atomic configuration of surface superstructures in layer-by-layer growth of cubic SiC

T. Fuyuki, H. Matsunami, T. Yoshinobu, 1994 .

Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition

H. Matsunami, K. Shibahara, S. Nishino, 1986 .

Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami, 1997 .

Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 system

H. Matsunami, S. Nishino, Tetsuro Tanaka, 1978 .

Epitaxial growth of ferroelectric PLZT [(Pb, La)(Zr, Ti)O3] thin films

M. Ishida, H. Matsunami, Tetsuro Tanaka, 1978 .

Preparation and properties of ferroelectric PLZT thin films by rf sputtering

Hiroyuki Matsunami, M. Ishida, H. Matsunami, 1977 .

Preparation of PLZT Thin Films by RF Sputtering

M. Ishida, H. Matsunami, Tetsuro Tanaka, 1976 .

Hydrogen incorporation scheme in hydrogenated amorphous silicon/silicon carbon multilayers

H. Matsunami, M. Yoshimoto, 1990 .

Hot Electron Conduction in a-Si:H/a-Si0.2C0.8:H Super Structure

T. Fuyuki, H. Matsunami, M. Yoshimoto, 1986 .

Effects of Deposition Conditions on Properties of a-Si1-xCx:H Diagnosed Using Optical Emission Spectroscopy

T. Fuyuki, H. Matsunami, M. Yoshimoto, 1986 .

Tunneling Current in a-Si:H/a-Si1-xCx:H Multilayer Structures

T. Fuyuki, H. Matsunami, M. Yoshimoto, 1986 .

A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face

H. Matsunami, T. Kimoto, H. Yano, 2001 .

Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates

H. Matsunami, T. Kimoto, Katsushi Nishino, 1997 .

Phonon‐electron scattering in single crystal silicon carbide

H. Matsunami, D. Morelli, J. Heremans, 1993 .

Traps at the SiC/SiO 2 -Interface

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2000 .

Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC

H. Matsunami, T. Kimoto, A. Itoh, 1995 .

Fundamental research on semiconductor SiC and its applications to power electronics

H. Matsunami, 2020, Proceedings of the Japan Academy. Series B, Physical and biological sciences.

Aluminum and boron ion implantations into 6H-SiC epilayers

H. Matsunami, T. Kimoto, A. Itoh, 1996 .

Bulk crystal growth of 6H-SiC on polytype-controlled substrates through vapor phase and characterization

H. Matsunami, T. Kimoto, A. Yamashita, 1991 .

Crystal growth of SiC by step-controlled epitaxy

H. Matsunami, T. Ueda, H. Nishino, 1990 .

SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology

H. Matsunami, T. Kimoto, R. K. Malhan, 2006 .

Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition

H. Matsunami, T. Kimoto, R. K. Malhan, 2004 .

Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics

H. Matsunami, T. Kimoto, R. K. Malhan, 2006 .

Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

H. Matsunami, T. Kimoto, R. K. Malhan, 2004 .

The silicon carbide semiconductor device

R. Kumar, H. Matsunami, T. Kimoto, 2003 .

4H-SiC (11-20) Epitaxial Growth

H. Matsunami, T. Kimoto, H. Yano, 2000 .

Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates

Tsunenobu Kimoto, Woo Sik Yoo, Steven Nutt, 1994 .

Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

H. Matsunami, F. Zhu, T. Fuyuki, 1996, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.

Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces

H. Matsunami, T. Kimoto, H. Yano, 2002 .

Semiconductor Laser Materials for Visible Emission

H. Matsunami, A. Suzuki, 1982 .

High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H–SiC(0001) Substrate

H. Matsunami, N. Onojima, J. Suda, 2003 .

Either step-flow or layer-by-layer growth for AlN on SiC (0001) substrates

H. Matsunami, T. Kimoto, N. Onojima, 2003 .

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

H. Matsunami, T. Kimoto, H. Yano, 1999 .

Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)

H. Matsunami, T. Kimoto, H. Yano, 2002 .

Epitaxial Growth and Device Processing of SiC on Non-Basal Planes

H. Matsunami, T. Kimoto, H. Yano, 2004 .

MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N 2 O Oxidation

H. Matsunami, T. Kimoto, Y. Kanzaki, 2004 .

Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces

H. Matsunami, T. Kimoto, H. Yano, 2000 .

Epitaxial growth of 4H–SiC on 4° off-axis (0 0 0 1) and (0 0 0 1¯) substrates by hot-wall chemical vapor deposition

H. Matsunami, T. Kimoto, K. Wada, 2006 .

Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition

H. Matsunami, T. Kimoto, K. Fujihira, 2003 .

High-Sensitivity Analysis of Z1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition

H. Matsunami, T. Kimoto, S. Nakamura, 2002 .

Auger Electron Spectroscopy Analysis of Thermal Oxide Layers of Silicon Carbide

H. Matsunami, Tetsuro Tanaka, A. Suzuki, 1978 .

Plasma-Grown Oxide on InP

H. Matsunami, K. Kanazawa, 1981 .

Effects of C/Si ratio in fast epitaxial growth of 4H-SiC(0001) by vertical hot-wall chemical vapor deposition

H. Matsunami, T. Kimoto, H. Fujiwara, 2005 .

Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

H. Matsunami, T. Kimoto, H. Shiomi, 2003 .

High-Voltage 4H–SiC Schottky Barrier Diodes Fabricated on (033̄8) with Closed Micropipes

H. Matsunami, T. Kimoto, H. Shiomi, 2003 .

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

H. Matsunami, T. Kimoto, K. Fujihira, 2002 .

Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD

H. Matsunami, T. Kimoto, H. Saitoh, 2003 .

An Overview of SiC Growth

Hiroyuki Matsunami, H. Matsunami, 2000 .

Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

H. Matsunami, T. Kimoto, K. Fujihira, 2002 .

C‐V characteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2 layer

H. Matsunami, A. Suzuki, Nobuyuki Furui, 1981 .

Defect Formation in (0001)- and (112̄0)-Oriented 4H-SiC Crystals P+-Implanted at Room Temperature

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Rate-determining process in chemical vapor deposition of SiC on off-axis α -SiC ( 0 0 0 1 )

H. Matsunami, T. Kimoto, S. Nakamura, 2004 .

State-of-the-art wide band-gap semiconductors for power electronic devices

H. Matsunami, 2004, International Meeting for Future of Electron Devices, 2004..

4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication

H. Matsunami, T. Kimoto, N. Onojima, 2003 .

Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature

H. Matsunami, T. Kimoto, M. Yoshimoto, 2000 .

SiC MISFETs with MBE-grown AlN Gate Dielectric

C. Zetterling, H. Matsunami, T. Kimoto, 2000 .

Growth of AlN (112̄0) on 6H-SiC (112̄0) by Molecular-Beam Epitaxy

H. Matsunami, N. Onojima, J. Suda, 2002 .

Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence

H. Matsunami, T. Kimoto, T. Yamamoto, 1997 .

Fast epitaxial growth of high-purity 4H-SiC( $$000\bar 1$$ ) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition

H. Matsunami, T. Kimoto, Y. Sugawara, 2005 .

High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face

H. Matsunami, T. Kimoto, K. Danno, 2004 .

Homoepitaxial growth of 4H-SiC (0 3 3̄ 8) and nitrogen doping by chemical vapor deposition

H. Matsunami, T. Kimoto, H. Shiomi, 2003 .

Chemical vapor deposition and deep level analyses of 4H-SiC(112̄0)

H. Matsunami, T. Kimoto, H. Yano, 2001 .

Formation of semi‐insulating 6H‐SiC layers by vanadium ion implantations

H. Matsunami, T. Kimoto, M. Inoue, 1996 .

Specular Surface Morphology of 4H–SiC Epilayers Grown on (112̄0) Face

H. Matsunami, T. Kimoto, Z. Chen, 1999 .

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

H. Matsunami, T. Kimoto, K. Wada, 2006 .

Step-controlled epitaxial growth of SiC and its conductivity control

H. Matsunami, T. Kimoto, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

4H-SiC MOSFETs on (03-38) Face

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2002 .

Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face

H. Matsunami, T. Kimoto, Y. Sugawara, 2000 .

The effects of N+ dose in implantation into 6h-sic epilayers

H. Matsunami, T. Kimoto, A. Itoh, 1995 .

Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)

H. Matsunami, T. Kimoto, S. Nakamura, 2003 .

Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Nuclear Transmutation Doping of Phosphorus into 6H-SiC

H. Matsunami, T. Kimoto, S. Kanazawa, 2000 .

Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD

H. Matsunami, T. Kimoto, K. Fujihira, 2002 .

Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD

H. Matsunami, T. Kimoto, K. Fujihira, 2003 .

Photoluminescence of homoepitaxial 3C-SiC on sublimation-grown 3C-SiC substrates

H. Matsunami, T. Kimoto, Katsushi Nishino, 1995 .

Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

Tsunenobu Kimoto, Hiroyuki Matsunami, Fukuji Inoko, 2003 .

Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H–SiC Homoepitaxial Film

H. Matsunami, T. Kimoto, F. Inoko, 2002 .

Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes

T. Kimoto, H. Matsunami, M. Inoue, 1998 .

Temperature dependence of InGaP, InAlP, and AlGaP growth in metalorganic molecular-beam epitaxy

H. Matsunami, K. Ozasa, M. Yuri, 1990 .

MOMBE growth of P-based III–V semiconductors and its photo-enhancement at low temperatures

H. Matsunami, K. Ozasa, M. Yoshimoto, 1991 .

Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

H. Matsunami, M. Yoshimoto, T. Tsuji, 1992 .

Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing

H. Matsunami, T. Kimoto, G. Pensl, 2007 .

The Development of 4H-SiC {03-38} Wafers

H. Matsunami, T. Kimoto, S. Nishino, 2002 .

Fast Epitaxial Growth of 4H–SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

H. Matsunami, T. Kimoto, K. Fujihira, 2001 .

Chemical Vapor Epitaxy of Silicon Carbide

H. Matsunami, 2001 .

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

H. Matsunami, T. Kimoto, H. Fujiwara, 2004 .

High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

H. Matsunami, T. Kimoto, Y. Sugawara, 2002 .

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face

H. Matsunami, T. Kimoto, G. Pensl, 2004 .

Technological Aspects of Ion Implantation in SiC Device Processes

H. Matsunami, T. Kimoto, Y. Negoro, 2005 .

Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

H. Matsunami, T. Kimoto, H. Yano, 2001 .

Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si

K. Shibahara, H. Matsunami, K. Shibahara, 1986, IEEE Electron Device Letters.

Deep-ultraviolet micro-Raman investigation of surface defects in a 4H–SiC homoepitaxially grown film

H. Matsunami, T. Kimoto, S. Matsuo, 2005 .

Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films

H. Matsunami, T. Kimoto, F. Inoko, 2004 .

Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High‐Voltage Rectifying Devices

H. Matsunami, A. Itoh, 1997 .

Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD

H. Matsunami, T. Kimoto, K. Wada, 2005 .

Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions

H. Matsunami, T. Kimoto, S. Nakamura, 2003 .

Plasma Anodic Oxidation of InP

T. Fuyuki, H. Matsunami, S. Moriuchi, 1983 .

Short-Channel Effects in 4H-SiC MOSFETs

H. Matsunami, T. Kimoto, J. Suda, 2005 .

Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition

Tsunenobu Kimoto, Hiroyuki Matsunami, Satoshi Tamura, 2001 .

Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si

H. Matsunami, 1987 .

CHEMICAL VAPOR DEPOSITION OF SINGLE CRYSTALLINE β-SILICON CARBIDE FILMS ON SILICON SUBSTRATE WITH SPUTTERED SILICON CARBIDE INTERMEDIATE LAYER

H. Matsunami, S. Nishino, Y. Hazuki, 1981 .

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient

H. Matsunami, T. Kimoto, J. Suda, 2004 .

Growth and Electrical Characterization of 4H-SiC Epilayers

H. Matsunami, T. Kimoto, K. Danno, 2007 .

Special Issue on Silicon Carbide Devices and Technology

Jian H. Zhao, J. Cooper, H. Matsunami, 2008 .

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 2002 .

Semiconductor Silicon Carbide for Power Electronic Application

H. Matsunami, A. Itoh, 1995 .

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Takashi Nakajima, Tsunenobu Kimoto, Naohisa Inoue, 1997 .

Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy

H. Matsunami, N. Onojima, J. Suda, 2002 .

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami, 2005, IEEE Transactions on Electron Devices.

Design and Fabrication of SiC RESURF MOSFETs

H. Matsunami, T. Kimoto, H. Yano, 2001 .

Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

H. Matsunami, T. Kimoto, N. Onojima, 2004 .

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

H. Matsunami, N. Onojima, J. Suda, 2002 .

Lattice Relaxation of AlN Buffer on Surface-Treated SiC in Molecular-Beam Epitaxy for Growth of High-Quality GaN

H. Matsunami, N. Onojima, J. Suda, 2002 .

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

H. Matsunami, T. Kimoto, H. Fujiwara, 2005 .

W. J. Choyke, H. Matsunami, T. Kimoto, 1997 .

H. Matsunami, T. Kimoto, G. Pensl, 2001 .

Oxygen in silicon carbide : shallow donors and deep acceptors

W. J. Choyke, H. Matsunami, T. Kimoto, 1999 .

Development of power semiconductor silicon carbide technology - a breakthrough and epoch-making steps

H. Matsunami, 2015, 2015 15th International Workshop on Junction Technology (IWJT).

Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure

H. Matsunami, T. Kimoto, J. Suda, 2002 .

Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask

H. Matsunami, T. Kimoto, R. K. Malhan, 2005 .

MOS interface properties and MOSFET performance on 4H-SiC{0001} and (11-20) processed by N/sub 2/O oxidation

T. Kimoto, H. Matsunami, T. Kimoto, 2004, International Meeting for Future of Electron Devices, 2004..

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

H. Matsunami, T. Kimoto, J. Suda, 2005, IEEE Transactions on Electron Devices.

High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers

H. Matsunami, T. Kimoto, J. Suda, 2003, IEEE Electron Device Letters.

Homoepitaxial mesa structures on 4H–SiC (0 0 0 1) and (1 1 2̄ 0) substrates by chemical vapor deposition

H. Matsunami, T. Kimoto, Y. Chen, 2003 .

Surface Step Structures of SiC Epitaxial Layers Grown on Off-axis SiC (0001)

H. Matsunami, T. Kimoto, 2001 .

Deep Interface States in SiO 2/p-type α-SiC Structure

H. Matsunami, T. Kimoto, N. Inoue, 1997 .

Interface States of SiO2/SiC on (11-20) and (0001) Si Faces

H. Matsunami, T. Kimoto, H. Yano, 2001 .

MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2000 .

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

H. Matsunami, T. Kimoto, K. Danno, 2005 .

Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition

H. Matsunami, T. Kimoto, S. Nakamura, 2003 .

Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

H. Matsunami, T. Kimoto, S. Nakamura, 2002 .

Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing

H. Matsunami, T. Kimoto, Y. Negoro, 2005 .

Plasma Etching of CVD Grown Cubic SiC Single Crystals

H. Matsunami, K. Shibahara, S. Nishino, 1985 .

Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC

H. Matsunami, T. Kimoto, N. Miyamoto, 2001 .

Preparation of ferroelectric PLZT thin films

M. Ishida, H. Matsunami, Tetsuro Tanaka, 1978 .

GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices

H. Matsunami, M. Yoshimoto, T. Kurobe, 2001 .

Laser-assisted atomic layer epitaxy of GaP in chemical beam epitaxy

H. Matsunami, M. Yoshimoto, Atsushi Kajimoto, 1993 .

Heteroepitaxial Growth of SiC on Si and its Application

H. Matsunami, 1989 .

Crystalline SiC on Si and High Temperature Operational Devices

H. Matsunami, 1989 .

Semiconductor silicon carbide-expectation for power devices

H. Matsunami, 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

Formation of Deep pn Junctions by High-Energy Al and B Ion Implantations into SiC

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

STEP-CONTROLLED EPITAXY OF SIC: HIGH-QUALITY HOMOEPITAXIAL GROWTH

H. Matsunami, T. Kimoto, 1998 .