K. Endo

发表

Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability

K. Banerjee, H. Dadgour, K. Endo, 2008, 2008 IEEE International Electron Devices Meeting.

Experimental realization of complementary p- and n- tunnel FinFETs with subthreshold slopes of less than 60 mV/decade and very low (pA/μm) off-current on a Si CMOS platform

K. Endo, T. Mori, Y. Morita, 2014, 2014 IEEE International Electron Devices Meeting.

Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design

K. Banerjee, H. Dadgour, K. Endo, 2010, IEEE Transactions on Electron Devices.

Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs

K. Endo, T. Matsukawa, S. O'uchi, 2012, IEEE Transactions on Electron Devices.

Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal–oxide–silicon fin field-effect transistors

K. Endo, Y. Morita, W. Mizubayashi, 2015 .

Heated ion implantation technology for highly reliable metal-gate/high-k CMOS SOI FinFETs

K. Endo, Y. Morita, W. Mizubayashi, 2013, 2013 IEEE International Electron Devices Meeting.

Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness

K. Endo, T. Matsukawa, S. O'uchi, 2009, IEEE Electron Device Letters.

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

K. Endo, Y. Morita, W. Mizubayashi, 2014 .

A Correlative Analysis Between Characteristics of FinFETs and SRAM Performance

K. Endo, T. Matsukawa, S. O'Uchi, 2012, IEEE Transactions on Electron Devices.

Comprehensive analysis of variability sources of FinFET characteristics

K. Endo, T. Matsukawa, S. O'uchi, 2006, 2009 Symposium on VLSI Technology.

Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation

Kazuhiko Endo, K Banerjee, K. Banerjee, 2010, IEEE Transactions on Electron Devices.

Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

K. Endo, T. Mori, Y. Morita, 2013, 2013 Symposium on VLSI Technology.

Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

E. Suzuki, K. Ishii, K. Endo, 2007, IEEE Electron Device Letters.

Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

K. Endo, T. Matsukawa, S. O'uchi, 2012, IEEE Transactions on Electron Devices.

Bias temperature instability in tunnel field-effect transistors

K. Endo, Y. Morita, K. Fukuda, 2017 .

Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

K. Endo, Yiming Li, W. Mizubayashi, 2017 .

Demonstration, analysis, and device design considerations for independent DG MOSFETs

E. Suzuki, K. Ishii, K. Endo, 2005, IEEE Transactions on Electron Devices.

Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories

T. Chikyow, K. Endo, T. Nabatame, 2015 .

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

K. Endo, Y. Morita, W. Mizubayashi, 2014 .

Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

T. Chikyow, K. Endo, T. Nabatame, 2014 .

1=f noise characteristics of fin-type field-effect transistors in saturation region

K. Endo, H. Ishikuro, T. Matsukawa, 2013 .

Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

K. Endo, T. Matsukawa, S. O'uchi, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation

Hiromi Yamauchi, Kunihiro Sakamoto, T. Hayashida, 2012 .

Independent-Double-Gate FINFET SRAM Cell for Drastic Leakage Current Reduction

E. Suzuki, K. Ishii, K. Endo, 2010 .

Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs

K. Endo, T. Matsukawa, S. O'uchi, 2006, 2006 International Electron Devices Meeting.

Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

K. Endo, T. Matsukawa, H. Yamauchi, 2007, IEEE Electron Device Letters.

Metal-Gate FinFET Variation Analysis by Measurement and Compact Model

K. Endo, T. Matsukawa, H. Yamauchi, 2009, IEEE Electron Device Letters.

Independent double-gate FinFET SRAM technology

Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo, 2011 .

Characterization of metal-gate FinFET variability based on measurements and compact model analyses

E. Suzuki, K. Ishii, K. Endo, 2008, 2008 IEEE International Electron Devices Meeting.

On the gate-stack origin threshold voltage variability in scaled FinFETs and multi-FinFETs

K. Endo, T. Matsukawa, S. O'Uchi, 2010, 2010 Symposium on VLSI Technology.

Advanced FinFET process technology for 20 nm node and beyond

K. Endo, Y. Morita, W. Mizubayashi, 2011, The 4th IEEE International NanoElectronics Conference.

Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

Enhancing SRAM cell performance by using independent double-gate FinFET

E. Suzuki, K. Ishii, K. Endo, 2008, 2008 IEEE International Electron Devices Meeting.

Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance

K. Endo, Y. Morita, W. Mizubayashi, 2012, IEEE Transactions on Electron Devices.

Nanoscale TiN wet etching and its application for FinFET fabrication

K. Endo, T. Matsukawa, S. O'uchi, 2009, 2009 International Semiconductor Device Research Symposium.

Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

Byung-Gook Park, Seongjae Cho, Meishoku Masahara, 2009, 2009 International Semiconductor Device Research Symposium.

Investigation of N-Channel Triple-Gate Metal-Oxide-Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate

E. Suzuki, K. Ishii, K. Endo, 2006 .

Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping

K. Endo, T. Matsukawa, S. O'Uchi, 2010 .

Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

K. Endo, T. Matsukawa, H. Yamauchi, 2008, 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial.

Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

K. Endo, T. Matsukawa, S. O'Uchi, 2012 .

Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

E. Suzuki, K. Ishii, K. Endo, 2006, IEEE Transactions on Nanotechnology.

Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

K. Endo, T. Matsukawa, M. Masahara, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication

K. Endo, T. Matsukawa, S. O'Uchi, 2010 .

A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

E. Suzuki, K. Ishii, K. Endo, 2009 .

Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

E. Suzuki, K. Ishii, K. Endo, 2008 .

Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

E. Suzuki, K. Endo, T. Matsukawa, 2004 .

Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer Dielectric

K. Endo, 1997 .

CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis

T. Irisawa, K. Endo, T. Mori, 2018, IEEE Journal of the Electron Devices Society.

Position Control and Gas Source CVD Growth Technologies of 2D MX2 Materials for Real LSI Applications

T. Irisawa, K. Endo, T. Mori, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design

Kaustav Banerjee, Kazuhiko Endo, Seid Hadi Rasouli, 2010, 2010 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

Steep switching in trimmed-gate tunnel FET

K. Endo, K. Fukuda, T. Matsukawa, 2018, AIP Advances.

Adhesion of a-C:F during oxygen plasma annealing

T. Tatsumi, K. Endo, T. Horiuchi, 1997 .

Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

T. Tatsumi, K. Endo, 1995 .

PLASMA FLUORINATION OF POLYIMIDE THIN FILMS

T. Tatsumi, K. Endo, 1997 .

Effect of Bias Addition on the Gap-Filling Properties of Fluorinated Amorphous Carbon Thin Films Grown by Helicon Wave Plasma-Enhanced Chemical Vapor Deposition

K. Endo, T. Matsubara, 1996 .

Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

T. Tatsumi, K. Endo, 1996 .

Non-equilibrium solid-phase growth of amorphous GeSn layer on Ge-on-insulator wafer induced by flash lamp annealing

K. Endo, W. Mizubayashi, Y. Ishikawa, 2021, Applied Physics Express.

Preparation of yttrium barium copper oxide superconducting films by metalorganic molecular beam epitaxy

K. Endo, K. Endo, S. Misawa, 1991 .

Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

E. Suzuki, K. Ishii, K. Endo, 2005 .

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES 1080 Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique

T. Tatsumi, K. Endo, O. Brandt, 1997 .

High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure

N. Kumagai, K. Endo, M. Shimizu, 2020, Semiconductor Science and Technology.

Pore formation in YBCO films deposited by a large-area pulsed laser deposition system

K. Endo, H. Yamasaki, Y. Nakagawa, 2004 .

High-quality superconducting thin films of Bi2Sr2Ca2Cu3Ox grown in situ by metalorganic CVD

K. Endo, K. Kajimura, S. Misawa, 1992, Nature.

Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED

K. Endo, Yiming Li, S. Samukawa, 2022, 2022 IEEE 22nd International Conference on Nanotechnology (NANO).

Preparation and characterization of (0 0 1) SmBa 2Cu 3O y thin films by MOCVD

K. Endo, K. Endo, P. Badica, 2003 .

High-Tc and high-Jc superconducting BSCCO thin films grown by MOCVD

K. Endo, K. Kajimura, S. Misawa, 1991 .

Diffusion welding of SiC fiber-reinforced aluminum composites to aluminum.

K. Endo, K. Ikeuchi, T. Momono, 1989 .

Precipitate-free films of La1−xSrxMnO3 grown on the substrates with artificial step edges

Hiromi Sato, A. Sawa, K. Endo, 2004 .

Preparation of YBCO superconducting films by MOMBE

K. Endo, K. Kajimura, K. Abe, 2002 .

Mombe Growth of Ybco Superconducting Films With In-Situ Monitoring of Rheed Oscillations

K. Endo, K. Kajimura, F. Teherani, 1993 .

(119) oriented Bi-2223 thin films grown on [100] NdGaO/sub 3/ by MOCVD

K. Endo, K. Abe, P. Badica, 2003 .

AFM observation of as-grown () Bi-2223 and () Y-123 thin films by MOCVD

K. Endo, P. Badica, J. Itoh, 2003 .

Preparation by MOCVD and characterization by AFM of the (119) oriented Bi-2223 thin films

K. Endo, K. Abe, P. Badica, 2002 .

Intrinsic Josephson junctions on Bi-2223 superconducting films grown by MOCVD

Hiromi Sato, K. Endo, H. Akoh, 2002 .

MOCVD growth and AFM observation of non c-axis oriented Bi-2223 surperconducting thin films

K. Endo, K. Kajimura, K. Abe, 2002 .

Orientation Control of HTS Thin Films

K. Endo, K. Kajimura, K. Abe, 2001 .

Relationship between composition and surface morphology in YBCO films deposited by large-area PLD

K. Endo, Y. Nakagawa, H. Yamasaki, 2004 .

Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-k Materials

K. Endo, K. Koyanagi, Y. Matsubara, 2003 .

Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

T. Tatsumi, K. Endo, K. Shinoda, 1999 .

Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

K. Endo, T. Matsukawa, S. O'Uchi, 2010 .

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

K. Endo, Y. Morita, K. Fukuda, 2015 .

Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels

K. Endo, Y. Morita, W. Mizubayashi, 2014 .

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

K. Endo, Y. Morita, W. Mizubayashi, 2013 .

Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates

K. Endo, Y. Morita, W. Mizubayashi, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

K. Endo, T. Matsukawa, S. O'uchi, 2012, 2012 International Electron Devices Meeting.

Low-k Amorphous Carbon Films for Interconnects of Submicron-Scale Devices

K. Endo, Y. Matsubara, 1999 .

Variability Analysis of TiN Metal-Gate FinFETs

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2010, IEEE Electron Device Letters.

Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

E. Suzuki, K. Ishii, K. Endo, 2006 .

Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

K. Endo, M. Shimizu, S. Samukawa, 2019, physica status solidi (a).

Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

K. Endo, T. Matsukawa, H. Yamauchi, 2006, IEEE Transactions on Electron Devices.

Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability

Kaustav Banerjee, Chuan Xu, Kazuhiko Endo, 2013, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

K. Endo, T. Matsukawa, S. O'uchi, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

A Ta/Mo Interdiffusion Dual Metal Gate Technology for Drivability Enhancement of FinFETs

E. Suzuki, K. Ishii, K. Endo, 2008, IEEE Electron Device Letters.

Grain-Orientation Induced Quantum Confinement Variation in FinFETs and Multi-Gate Ultra-Thin Body CMOS Devices and Implications for Digital Design

K. Endo, J. F. Chen, S. H. Rasouli, 2011, IEEE Transactions on Electron Devices.

Novel approach to growth of precipitate-free, high-quality oxide thin films suitable for device applications

K. Endo, P. Badica, H. Akoh, 2006 .

A new growth method of high-quality precipitate-free HTS thin films applied for electronics

K. Endo, P. Badica, H. Akoh, 2006 .

HTS thin films: a convenient method for removal of precipitates-segregates

K. Endo, P. Badica, H. Akoh, 2006 .

New growth method of high-quality, multicomponent oxide thin films used in strongly correlated electron device applications: impurity-precipitate issues and their problem solving

K. Endo, H. Sato, P. Badica, 2005, SPIE Optics + Photonics.

Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

Yao-Jen Lee, K. Endo, Yiming Li, 2019, Journal of Vacuum Science & Technology A.

High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

J. Tarng, Yao-Jen Lee, K. Endo, 2021, IEEE Open Journal of Nanotechnology.

Low activation energy, high-quality oxidation of Si and Ge using neutral beam

K. Endo, M. Masahara, S. Samukawa, 2011 .

Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation

Takashi Matsukawa, Meishoku Masahara, Seiji Samukawa, 2009 .

Independent-Double-Gate FinFET SRAM for Leakage Current Reduction

K. Endo, T. Matsukawa, H. Yamauchi, 2009, IEEE Electron Device Letters.

Current-voltage characteristics and quasi-two-dimensional vortex-glass transition in epitaxial Bi2Sr2Ca2Cu3Ox films

K. Endo, K. Kajimura, S. Kosaka, 1995 .

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

K. Endo, Y. Morita, K. Fukuda, 2015 .

Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs

K. Endo, T. Matsukawa, S. O'uchi, 2014, 2014 IEEE International Electron Devices Meeting.

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes

Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

T. Tatsumi, K. Endo, 1997 .

Steep switching less than 15 mV dec−1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure

K. Endo, K. Fukuda, T. Matsukawa, 2018, Japanese Journal of Applied Physics.

AFM and TEM studies on high-quality Bi-2223 thin films grown by MOCVD

K. Endo, K. Kajimura, K. Nakamura, 1995, IEEE transactions on applied superconductivity.

(Ca,Ba)CuO2 films grown by MOCVD: surface morphology and structural studies

K. Endo, P. Badica, J. Itoh, 2003 .

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations

Takashi Matsukawa, Meishoku Masahara, K. Fukuda, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Fabrication and Power-Management Demonstration of Four-Terminal FinFETs

Meishoku Masahara, Shin-ichi O'uchi, Kazuhiko Endo, 2007 .

Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs

K. Endo, W. Mizubayashi, Y. Ishikawa, 2021, Applied Physics Express.

Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

E. Suzuki, K. Ishii, K. Endo, 2006 .

Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

K. Endo, Tomoki Harada, S. Samukawa, 2023, Journal of Applied Physics.

High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation

K. Endo, S. Yamasaki, T. Matsukawa, 2010 .

Highly Water-Repellent Nanostructure on Quartz Surface Based on Cassie-Baxter Model With Filling Factor

J. Tarng, K. Endo, Yiming Li, 2020, IEEE Open Journal of Nanotechnology.

Charge trapping type FinFET flash memory with Al2O3 blocking layer

T. Chikyow, K. Endo, T. Nabatame, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Threshold-Voltage Reduction of FinFETs by Ta/Mo Interdiffusion Dual Metal-Gate Technology for Low-Operating-Power Application

E. Suzuki, K. Ishii, K. Endo, 2008, IEEE Transactions on Electron Devices.

Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates

E. Suzuki, K. Ishii, K. Endo, 2008 .

Atomic Layer Deposition of High-k Gate Dielectrics Using MO Precursor and Cyclic Plasma Exposure

T. Tatsumi, K. Endo, 2002 .

Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation

T. Tatsumi, K. Endo, 2003 .

Preparation And Properties Of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition

T. Tatsumi, K. Endo, 1995 .

Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors

K. Endo, T. Matsukawa, S. O'Uchi, 2013 .

The 2D Materials Used for Nanodevice Applications: Utilizing Aggressively Scaled Transistors

T. Irisawa, K. Endo, Y. Miyata, 2019, IEEE Nanotechnology Magazine.

Suppression of Charges in Al~2O~3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation

Toru Tatsumi, Satoshi Kamiyama, T. Iwamoto, 2004 .

Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Hiromi Yamauchi, Kenichi Ishii, M. Masahara, 2005 .

Design Optimization of FinFET Domino Logic Considering the Width Quantization Property

S. H. Rasouli, K Banerjee, S H Rasouli, 2010, IEEE Transactions on Electron Devices.

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

K. Endo, Y. Morita, K. Fukuda, 2017 .

Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

T. Tatsumi, K. Endo, Y. Matsubara, 1997 .

Fabrication of intrinsic Josephson junctions on BSCCO superconducting films grown by MOCVD

Hiromi Sato, K. Endo, K. Kajimura, 2002 .

Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters

In Man Kang, James S. Harris, Sang Wan Kim, 2010 .

Silicon nanodisk array with a fin field-effect transistor for time-domain weighted sum calculation toward massively parallel spiking neural networks

Takashi Morie, Yasuo Takahashi, Hirofumi Tanaka, 2016 .

Phenyl Silica Glass for Formation of Porous Dielectric Film

T. Tatsumi, K. Endo, K. Shinoda, 1999 .

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Takashi Matsukawa, Meishoku Masahara, Shinji Migita, 2014, IEEE Electron Device Letters.

Vertical ultrathin‐channel multi‐gate MOSFETs (MuGFETs): technological challenges and future developments

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, 2009 .

Low temperature microwave annealed FinFETs with less Vth variability

P. Sung, Y. Lee, K. Endo, 2016, 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).