M. Guillorn

发表

Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond

W. Haensch, Y. Zhang, L. Chang, 2008, 2008 IEEE International Electron Devices Meeting.

Systematic studies on reactive ion etch-induced deformations of organic underlayers

Yayi Wei, Markus Brink, Sebastian Engelmann, 2011, Advanced Lithography.

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

E. Joseph, G. Cohen, Y. Zhang, 2010, 2010 Symposium on VLSI Technology.

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

G. Cohen, L. Sekaric, T. Barwicz, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

FinFET performance advantage at 22nm: An AC perspective

B. Yang, W. Haensch, Y. Zhang, 2008, 2008 Symposium on VLSI Technology.

Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication.

Chi-Chun Liu, Hsinyu Tsai, Sarunya Bangsaruntip, 2014, ACS nano.

FinFET resistance mitigation through design and process optimization

Ying Zhang, Chung-Hsun Lin, Wilfried Haensch, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Vertically Aligned Carbon Nanofibers and Related Structures: Controlled Synthesis and Directed Assembly

Michael L. Simpson, Timothy E. McKnight, Anatoli V. Melechko, 2005 .

Reduction of random telegraph noise in High-к / metal-gate stacks for 22 nm generation FETs

D. Frank, W. Haensch, M. Guillorn, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Impact of HK / MG stacks and future device scaling on RTN

D. Frank, W. Haensch, M. Guillorn, 2011, 2011 International Reliability Physics Symposium.

Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs

D. Frank, W. Haensch, M. Guillorn, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

I. Lauer, R. L. Bruce, K. Balakrishnan, 2013, 2013 IEEE International Electron Devices Meeting.

An integrated CMOS microluminometer for low-level luminescence sensing in the bioluminescent bioreporter integrated circuit.

J. M. Rochelle, M. L. Simpson, J M Rochelle, 2001, Sensors and actuators. B, Chemical.

Nanofiber Structures as Mimics for Cellular Membranes

M. L. Simpson, M. Guillorn, D. Lowndes, 2003 .

Digital electrostatic electron-beam array lithography

J. H. Whealton, M. L. Simpson, L. Baylor, 2002 .

Operation of a gated field emitter using an individual carbon nanofiber cathode

M. L. Simpson, C. Britton, L. Baylor, 2001 .

Vertically aligned carbon nanofiber-based field emission electron sources with an integrated focusing electrode

M. L. Simpson, L. Baylor, M. Guillorn, 2004 .

Transition between 'base' and 'tip' carbon nanofiber growth modes

M. L. Simpson, M. Guillorn, D. Lowndes, 2002 .

Subtractive W contact and local interconnect co-integration (CLIC)

Michael A. Guillorn, Eric A. Joseph, Sebastian U. Engelmann, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Synthetic nanoscale elements for delivery of materials into viable cells.

M. L. Simpson, M. Guillorn, D. Lowndes, 2005, Methods in molecular biology.

Cellular Interfacing with Arrays of Vertically Aligned Carbon Nanofibers and Nanofiber- Templated Materials

M. L. Simpson, M. Ericson, M. Guillorn, 2007 .

Effects of spatial separation on the growth of vertically aligned carbon nanofibers produced by plasma-enhanced chemical vapor deposition

M. L. Simpson, M. Guillorn, D. Lowndes, 2002 .

Individually addressable vertically aligned carbon nanofiber-based electrochemical probes

M. L. Simpson, D. Austin, M. Guillorn, 2002 .

Growth of vertically aligned carbon nanofibers by low-pressure inductively coupled plasma-enhanced chemical vapor deposition

L. Baylor, M. Guillorn, L. Allard, 2003 .

Large-scale synthesis of arrays of high-aspect-ratio rigid vertically aligned carbon nanofibres

M. L. Simpson, M. Guillorn, D. Lowndes, 2003 .

Growth rate of plasma-synthesized vertically aligned carbon nanofibers

M. L. Simpson, M. Guillorn, D. Lowndes, 2002 .

Shaping carbon nanostructures by controlling the synthesis process

M. L. Simpson, M. Guillorn, D. Lowndes, 2001 .

Initial lithography results from the digital electrostatic e-beam array lithography concept

M. L. Simpson, D. Joy, L. Baylor, 2004 .

Effects of Microfabrication Processing on the Electrochemistry of Carbon Nanofiber Electrodes

M. Guillorn, C. Culbertson, S. Jacobson, 2003 .

Nanopipe fabrication using vertically aligned carbon nanofiber templates

D. Austin, M. Guillorn, B. Ilic, 2002 .

Sharpening of carbon nanocone tips during plasma-enhanced chemical vapor growth

M. Guillorn, D. Lowndes, A. Melechko, 2001 .

Fabrication of gated cathode structures using an in situ grown vertically aligned carbon nanofiber as a field emission element

L. Baylor, M. Guillorn, D. Lowndes, 2001 .

Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns

M. Guillorn, N. Fuller, S. Engelmann, 2017 .

Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

D. Austin, M. Guillorn, D. Lowndes, 2003 .

Control Mechanisms for the Growth of Isolated Vertically Aligned Carbon Nanofibers

M. Guillorn, D. Lowndes, D. Hensley, 2002 .

Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniques

V. I. Merkulov, Michael L. Simpson, Michael A. Guillorn, 2003 .

Controlled transport of latex beads through vertically aligned carbon nanofiber membranes

M. Guillorn, D. Lowndes, M. Doktycz, 2002 .

Controlled alignment of carbon nanofibers in a large-scale synthesis process

J. H. Whealton, M. Guillorn, D. Lowndes, 2002 .

Alignment mechanism of carbon nanofibers produced by plasma-enhanced chemical-vapor deposition

Michael L. Simpson, Anatoli V. Melechko, Michael A. Guillorn, 2001 .

Microarrays of vertically-aligned carbon nanofiber electrodes in an open fluidic channel

Michael L. Simpson, Timothy E. McKnight, Anatoli V. Melechko, 2004 .

Self-aligned gated field emission devices using single carbon nanofiber cathodes

Michael L. Simpson, Anatoli V. Melechko, Michael A. Guillorn, 2002 .

Operation of individual integrally gated carbon nanotube field emitter cells

M. Guillorn, D. Geohegan, A. Puretzky, 2002 .

Intracellular integration of synthetic nanostructures with viable cells for controlled biochemical manipulation

Mitchel J. Doktycz, Michael L. Simpson, Timothy E. McKnight, 2003 .

In Situ Electric-Field-Induced Contrast Imaging of Electronic Transport Pathways in Nanotube-Polymer Composites

M. Guillorn, I. Ivanov, D. Geohegan, 2006 .

Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales.

Markus Brink, Sung-Wook Nam, Young Kwark, 2014, Nanoscale.

Scanning probe microscopy imaging of frequency dependent electrical transport through carbon nanotube networks in polymers

Sergei V. Kalinin, M. Guillorn, D. Geohegan, 2004 .

Condensed phase growth of single-wall carbon nanotubes from laser annealed nanoparticulates

David C. Joy, Michael A. Guillorn, Henrik Schittenhelm, 2001 .

DSA patterning options for FinFET formation at 7nm node

Akiteru Ko, Nelson Felix, Mark Somervell, 2016, SPIE Advanced Lithography.

Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks

Yu Zhu, Michael A. Guillorn, Wilfried Haensch, 2010, 2010 International Electron Devices Meeting.

A comparative study of fin-last and fin-first SOI FinFETs

Josephine B. Chang, M. Khare, W. Haensch, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs

D. A. Antoniadis, A. Majumdar, M. M. Frank, 2012, 2012 International Electron Devices Meeting.

Microfabricated field emission devices using carbon nanofibers as cathode elements

L. Baylor, M. Guillorn, D. Lowndes, 2001 .

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

C. Cabral, C. Lavoie, J. Newbury, 2013, IEEE Electron Device Letters.

A microfabrication process for a vacuum-encapsulated microchamber

M. Guillorn, P. Rack, S. Randolph, 2005 .

Four-probe charge transport measurements on individual vertically aligned carbon nanofibers

D. Austin, M. Guillorn, D. Lowndes, 2004 .

The electrodeposition of metal at metal/carbon nanotube junctions

D. Austin, M. Guillorn, D. Geohegan, 2002 .

Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond

Phil Oldiges, Terence Hook, Myung-Hee Na, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Computational aspects of optical lithography extension by directed self-assembly

Neal Lafferty, Joy Cheng, Hsinyu Tsai, 2013, Advanced Lithography.

Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond

Phil Oldiges, Wilfried Haensch, Andres Bryant, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Time-resolved diagnostics of single wall carbon nanotube synthesis by laser vaporization

Michael A. Guillorn, Henrik Schittenhelm, David B. Geohegan, 2002 .

Field emission from isolated individual vertically aligned carbon nanocones

J. H. Whealton, L. Baylor, M. Guillorn, 2002 .

Vertically aligned carbon nanofibers as sacrificial templates for nanofluidic structures

Mitchel J. Doktycz, Michael L. Simpson, Timothy E. McKnight, 2003 .

Resistivity of copper interconnects beyond the 7 nm node

L. Gignac, H. Miyazoe, D. Klaus, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs

M. Kobayashi, M. Yamaoka, E. Leobandung, 2012, 2012 International Electron Devices Meeting.

Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2

E. Joseph, C. Lavoie, M. Guillorn, 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

Josephine B. Chang, E. Joseph, W. Haensch, 2009 .

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

K. Maitra, T. Yamashita, V. S. Basker, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

An analysis of stress evolution in stacked GAA transistors

Sylvain Maitrejean, Emmanuel Augendre, Nicolas Loubet, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

W. Haensch, C. Lavoie, J. Newbury, 2010, IEEE Electron Device Letters.

Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

J. A. Ott, A. Pyzyna, C.-H. Lin, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Pattern collapse mitigation strategies for EUV lithography

Robert L. Bruce, Michael A. Guillorn, Dario L. Goldfarb, 2012, Advanced Lithography.

Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization

R. C. Tiberio, Michael L. Simpson, Michael A. Guillorn, 2000 .

Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy

Josephine B. Chang, M. Khater, M. Guillorn, 2014, IEEE Electron Device Letters.

High-$\kappa$/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

W. Haensch, C. Lavoie, V. Narayanan, 2010, IEEE Electron Device Letters.

Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication.

Joy Y. Cheng, E. Joseph, J. Pitera, 2014, ACS nano.

Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance

N. Loubet, T. Yamashita, J. A. Ott, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Carbon-nanofiber-based probing arrays for multipoint integration with cellular matrices

Michael L. Simpson, Timothy E. McKnight, Anatoli V. Melechko, 2004, SPIE Optics East.

Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design?

Nelson Felix, Markus Brink, Chi-Chun Liu, 2017 .

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

Chi-Chun Liu, C. Grant Willson, Christopher J. Ellison, 2016, SPIE Advanced Lithography.

Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch

Markus Brink, Joy Cheng, Michael A. Guillorn, 2015, Advanced Lithography.

Fin formation using graphoepitaxy DSA for FinFET device fabrication

Akiteru Ko, Nelson Felix, Nihar Mohanty, 2015, Advanced Lithography.

Customization and design of directed self-assembly using hybrid prepatterns

Markus Brink, Gurpreet Singh, Joy Cheng, 2015, Advanced Lithography.

Pattern transfer of directed self-assembly patterns for CMOS device applications

Sebastian Engelmann, Joy Cheng, Michael A. Guillorn, 2013 .

Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly

Sebastian Engelmann, Joy Cheng, Michael A. Guillorn, 2012 .