N. Fuller
发表
W. Haensch,
Y. Zhang,
L. Chang,
2008,
2008 IEEE International Electron Devices Meeting.
G. Cohen,
L. Sekaric,
T. Barwicz,
2009,
2009 IEEE International Electron Devices Meeting (IEDM).
B. Yang,
W. Haensch,
Y. Zhang,
2008,
2008 Symposium on VLSI Technology.
N. Fuller,
S. Engelmann,
R. Bruce,
2011
.
S. Bent,
N. Fuller,
M. Worsley,
2007
.
Chienfan Yu,
K. Mello,
A. Santiago,
2006,
The 17th Annual SEMI/IEEE ASMC 2006 Conference.
S. Purushothaman,
P. Brock,
R. Sooriyakumaran,
2010,
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
S. Gates,
S. Bent,
N. Fuller,
2005
.
Sebastian Engelmann,
Qinghuang Lin,
Nicholas C. M. Fuller,
2012
.
G. A. Antonelli,
Y. Nishi,
N. Fuller,
2010
.
S. Bent,
N. Fuller,
M. Worsley,
2008
.
M. Guillorn,
N. Fuller,
S. Engelmann,
2017
.
A. Simon,
P. Flaitz,
N. Fuller,
2005
.
S. Bent,
S. Nitta,
S. Purushothaman,
2006,
2006 International Interconnect Technology Conference.
E. T. Ryan,
A. Simon,
S. Nitta,
2005
.
Robert L. Bruce,
Sebastian Engelmann,
Hirokazu Matsumoto,
2017
.
S. Bent,
N. Fuller,
M. Worsley,
2006
.
Vincent M. Donnelly,
V. M. Donnelly,
Nicholas C. M. Fuller,
2003
.
M. V. Malyshev,
V. M. Donnelly,
N. Fuller,
2000
.
M. V. Malyshev,
V. M. Donnelly,
N. Fuller,
1999
.
Transient plasma-induced emission analysis of laser-desorbed species during Cl2 plasma etching of Si
V. M. Donnelly,
N. Fuller,
I. Herman,
2000
.
M. V. Malyshev,
V. M. Donnelly,
N. Fuller,
2000
.
Vincent M. Donnelly,
V. M. Donnelly,
Nicholas C. M. Fuller,
2001
.
Vincent M. Donnelly,
V. M. Donnelly,
Nicholas C. M. Fuller,
2002
.
Josephine B. Chang,
E. Joseph,
W. Haensch,
2009
.
K. Maitra,
T. Yamashita,
V. S. Basker,
2009,
2009 IEEE International Electron Devices Meeting (IEDM).
Sebastian Engelmann,
Joy Cheng,
Michael A. Guillorn,
2012
.
G. Cohen,
T. Barwicz,
J. Newbury,
2010
.
Stephan A. Cohen,
P. Rice,
S. Purushothaman,
2012
.
E. Joseph,
W. Haensch,
Y. Zhang,
2009,
2009 IEEE International Electron Devices Meeting (IEDM).