Dae-Hwang Kim

Three-dimensional simulation model of switching dynamics in phase change random access memory cells

Dae-Hwang Kim, F. Merget, M. Först, 2007 .

Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition

Martin Laurenzis, Dae-Hwang Kim, F. Merget, 2005 .

Simulation-based comparison of cell design concepts for phase change random access memory.

Florian Merget, Heinrich Kurz, Dae-Hwang Kim, 2007, Journal of nanoscience and nanotechnology.