J. Knoch

发表

Band-to-band tunneling in carbon nanotube field-effect transistors.

J. Appenzeller, Y. Lin, J. Knoch, 2004, Physical review letters.

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

J. Knoch, S. Mantl, J. Appenzeller, 2007 .

A novel concept for field-effect transistors - the tunneling carbon nanotube FET

J. Knoch, J. Appenzeller, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Tunneling phenomena in carbon nanotube field‐effect transistors

J. Knoch, J. Appenzeller, 2008 .

Field-modulated carrier transport in carbon nanotube transistors.

S. Wind, J. Appenzeller, J. Knoch, 2002, Physical review letters.

High-performance carbon nanotube field-effect transistor with tunable polarities

J. Knoch, P. Avouris, J. Appenzeller, 2005, IEEE Transactions on Nanotechnology.

Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors.

M. Radosavljevic, J. Knoch, P. Avouris, 2004, Physical review letters.

Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

J. Appenzeller, J. Knoch, P. Avouris, 2005, IEEE Transactions on Electron Devices.

Alternatives for Doping in Nanoscale Field‐Effect Transistors

J. Knoch, F. Riederer, T. Grap, 2018 .

Electrostatic Doping—Controlling the Properties of Carbon-Based FETs With Gates

J. Knoch, M. Muller, 2014, IEEE Transactions on Nanotechnology.

Toward Nanowire Electronics

H. Riel, J. Appenzeller, J. Knoch, 2008, IEEE Transactions on Electron Devices.

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Joachim Knoch, Joerg Appenzeller, S. Mantl, 2007 .

1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry

Yu-Ming Lin, J. Knoch, Zhihong Chen, 2007, IEEE Transactions on Nanotechnology.

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

Min Zhang, J. Knoch, S. Mantl, 2006, IEEE Transactions on Electron Devices.

Carbon Nanotube Field-effect Transistors-The Importance of Being Small

Joachim Knoch, Joerg Appenzeller, J. Knoch, 2006 .

Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI

J. Knoch, S. Mantl, Qing-Tai Zhao, 2006 .

Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

J. Knoch, S. Mantl, J. Appenzeller, 2005 .

Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

J. A. del Alamo, Paul M. Solomon, Joachim Knoch, 2000 .

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

J. Knoch, J. Appenzeller, Joerg Appenzeller, 2010, IEEE Electron Device Letters.

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

J. Raskin, J. Knoch, S. Mantl, 2010, IEEE Electron Device Letters.

Nanowire Tunneling Field-Effect Transistors

J. Knoch, 2016 .

Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm

J. Hartmann, J. Knoch, D. Grützmacher, 2020, IEEE Electron Device Letters.

Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

M. Helm, J. Knoch, R. Hübner, 2019, Journal of Applied Physics.

Donor deactivation in silicon nanostructures.

Walter Riess, Heike Riel, Joachim Knoch, 2009, Nature nanotechnology.

Building blocks of vertical GaN-based devices

Wiebke Witte, Andrei Vescan, Joachim Knoch, 2016 .

Ultra Thin Silicon Nitride Interface Engineering

A. Vescan, J. Knoch, Sergej Fischer, 2017 .

Characterization, Analysis and Modelling of DC and Dynamic Properties of GaN HFETs Grown on Silicon

A. Vescan, J. Knoch, H. Yacoub, 2017 .

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

J. Knoch, S. Mantl, Qing-Tai Zhao, 2005 .

Doping limits of grown in situ doped silicon nanowires using phosphine.

H. Riel, J. Knoch, H. Schmid, 2009, Nano letters.

Dopant‐free complementary metal oxide silicon field effect transistors

Hauke Ingolf Kremer, J. Knoch, T. Taubner, 2016 .

Role of elemental intermixing at the In2S3/CIGSe heterojunction deposited using reactive RF magnetron sputtering

J. Knoch, D. Raabe, R. Wuerz, 2019, Solar Energy Materials and Solar Cells.

Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs

S. Trellenkamp, J. Hartmann, J. Knoch, 2020, IEEE Transactions on Electron Devices.

Investigation of dopant segregation induced surface-fields using THz pulse transmission

J. Knoch, M. Nagel, B. Berghoff, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future

Abdur Rehman Jalil, R. Dittmann, S. Menzel, 2022, 2022 Design, Automation & Test in Europe Conference & Exhibition (DATE).

Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell

J. Knoch, J. John, B. Berghoff, 2019, Solar Energy Materials and Solar Cells.

High performance of potassium n-doped carbon nanotube field-effect transistors

J. Knoch, M. Radosavljevic, J. Appenzeller, 2004, cond-mat/0402350.

High-performance carbon nanotube field-effect transistor with tunable polarities

J. Knoch, P. Avouris, J. Appenzeller, 2005, IEEE Transactions on Nanotechnology.

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Sean C. Smith, J. Knoch, D. König, 2022, Advanced Physics Research.

Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr0.7Ca0.3

R. Dittmann, J. Knoch, S. Scholz, 2022, Physical Review Materials.

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

J. Knoch, B. Richstein, L. Hellmich, 2021, Micro.

Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors

J. Knoch, J. Appenzeller, K. Indlekofer, 2005, cond-mat/0504746.

High-Q inverted silica microtoroid resonators monolithically integrated into a silicon photonics platform.

J. Witzens, F. Merget, J. Knoch, 2018, Optics express.

Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes.

J. Knoch, P. Avouris, J. Appenzeller, 2005, Nano letters.

High performance of potassium n-doped carbon nanotube field-effect transistors

M. Radosavljevic, J. Knoch, P. Avouris, 2004, cond-mat/0402350.

First Demonstration of Vertical Ge0.92Sn0.08/Ge and Ge GAA Nanowire nMOSFETs with Low SS of 66 mV/dec and Small DIBL of 35 mV/V

J. Hartmann, J. Knoch, Qing-Tai Zhao, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Packaging technologies for power electronics in automotive applications

Rik W. De Doncker, Christoph Neeb, Joachim Knoch, 2017 .

Relation between growth rate, material quality, and device grade condition for intrinsic microcrystalline silicon: From layer investigation to the application to thin-film tandem solar cells

J. Knoch, U. Rau, S. Michard, 2015 .

Many-body approach to the terahertz response of Wigner molecules in gated nanowire structures

J. Knoch, K. Indlekofer, R. Németh, 2008 .

THz probe for nanowire FETs: simulation of few-electron fingerprints

J. Knoch, K. Indlekofer, R. Németh, 2007, 2007 65th Annual Device Research Conference.

Spatially resolved THz response as a characterization concept for nanowire FETs

J. Knoch, K. Indlekofer, R. N'emeth, 2007, 0706.1417.

Miniaturized pH‐Sensitive Field‐Effect Capacitors with Ultrathin Ta2O5 Films Prepared by Atomic Layer Deposition

J. Knoch, M. Schöning, A. Poghossian, 2022 .

Preparation of highly transparent superconductor-semiconductor contacts

B. Lengeler, J. Knoch, J. Appenzeller, 2000 .

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

M. Helm, J. Knoch, R. Hübner, 2020, New Journal of Physics.

Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact

S. Trellenkamp, J. Hartmann, J. Knoch, 2020, Solid-State Electronics.

Understanding Coulomb Effects in Nanoscale Schottky-Barrier-FETs

J. Knoch, J. Appenzeller, K. Indlekofer, 2006, IEEE Transactions on Electron Devices.

Spin Qubits Confined to a Silicon Nano-Ridge

J. Knoch, L. Schreiber, J. Beyer, 2019, Applied Sciences.

The engineering challenges in quantum computing

Xiang Fu, Koen Bertels, Dan Iorga, 2017, Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017.

The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors.

Phaedon Avouris, Joachim Knoch, Joerg Appenzeller, 2005, Nano letters.

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Joachim Knoch, Qing-Tai Zhao, C. Sandow, 2009 .

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon

J. Hartmann, J. Knoch, D. Grützmacher, 2023, Communications Engineering.

Influence of cracks on the local current–voltage parameters of silicon solar cells

Joachim Knoch, Otwin Breitenstein, T. M. Pletzer, 2015 .

Large-area MoS2 deposition via MOVPE

C. Stampfer, A. Vescan, J. Knoch, 2017 .

Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane

T. Topuria, P. Rice, H. Riel, 2008 .

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

M. Goryll, B. Ghyselen, J. Knoch, 2008 .

Visibility of two-dimensional layered materials on various substrates

J. Knoch, K. Kallis, M. Muller, 2015 .

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Joachim Knoch, Dan Buca, Qing-Tai Zhao, 2010 .

Tuning of Schottky barrier heights by silicidation induced impurity segregation

J. Knoch, S. Mantl, M. Zhang, 2006, 2006 International Workshop on Junction Technology.

Dopant segregation in SOI Schottky-barrier MOSFETs

J. Knoch, S. Mantl, M. Zhang, 2007 .

Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance

J. Hartmann, J. Knoch, D. Grützmacher, 2020, ACS Applied Nano Materials.

Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature

J. Knoch, D. Grützmacher, Qing-Tai Zhao, 2022, IEEE Electron Device Letters.

Tunneling versus thermionic emission in one-dimensional semiconductors.

M. Radosavljevic, J. Knoch, P. Avouris, 2004, Physical review letters.

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Joachim Knoch, Qing-Tai Zhao, C. Sandow, 2010 .

Buried multi-gate InAs-nanowire FETs

Joachim Knoch, C. Gupta, Thomas Grap, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Silicon nanowire tunneling field-effect transistors

Walter Riess, Heike Riel, Joachim Knoch, 2008 .

Optimizing tunnel FET performance - Impact of device structure, transistor dimensions and choice of material

Joachim Knoch, J. Knoch, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Direct Electroplating on Indium-Tin-Oxide-Coated Textured and Polished Silicon Substrates via Transition Metal Alloyed Interlayers

J. Knoch, K. Ding, Weiyuan Duan, 2022, Journal of The Electrochemical Society.

Sputtering as a viable route for In2S3 buffer layer deposition in high efficiency Cu(In,Ga)Se2 solar cells

J. Knoch, D. Raabe, R. Wuerz, 2019, Energy Science & Engineering.

Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

J. Knoch, J. Appenzeller, 2002 .

Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts

Joachim Knoch, Joerg Appenzeller, S. Mantl, 2005 .

Impact of the nanotube diameter on the performance of CNFETs

J. Knoch, P. Avouris, J. Appenzeller, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating.

Sean C. Smith, J. Knoch, D. König, 2021, ACS applied materials & interfaces.

Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

J. Knoch, H. Xu, J. Appenzeller, 2016, Nanoscale Research Letters.

Electrostatic Doping of 2D-Materials—From Single Devices Toward Circuitry Exploration

J. Knoch, K. Kallis, M. Muller, 2017 .

Investigations on Field‐Effect Transistors Based on Two‐Dimensional Materials

J. Knoch, F. Riederer, T. Grap, 2017 .

Buried triple-gate structures for advanced field-effect transistor devices

C. Stampfer, J. Knoch, K. Kallis, 2014 .

Electronic Structure Shift of Deeply Nanoscale Silicon by SiO2 versus Si3N4 Embedding as an Alternative to Impurity Doping

Sean C. Smith, J. Knoch, D. König, 2019, Physical Review Applied.

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

J. Knoch, Bin Sun, 2022, IEEE Transactions on Electron Devices.

Delineating charge and capacitance transduction in system-integrated graphene-based BioFETs used as aptasensors for malaria detection.

S. Ingebrandt, D. Mayer, A. Offenhäusser, 2022, Biosensors & bioelectronics.

Optimizing the identification of mono- and bilayer graphene on multilayer substrates.

J. Knoch, Marcel R Mueller, K. Kallis, 2012, Applied optics.

Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison

J. Knoch, J. Appenzeller, Saptarshi Das, 2016 .

Improved Performance of FDSOI FETs at Cryogenic Temperatures by Optimizing Ion Implantation into Silicide

J. Knoch, D. Grützmacher, I. Radu, 2023, Solid-State Electronics.

Role of electron and ion irradiation in a reliable lift-off process with e-beam evaporation and a bilayer PMMA resist system

J. Knoch, T. Grap, Bin Sun, 2021, 2104.12452.

Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

R. Waser, S. Menzel, I. Valov, 2023, IEEE Journal of the Electron Devices Society.

Multiscale modelling of MEMS based Pirani gauges

J. Knoch, J. Franz, Prafullkrishna Dani, 2023, 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).

Analysis of emitter performance contacted with silicide induced dopant segregation

J. Knoch, M. Lenz, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Contacting Moderately Doped Phosphorous Emitters of Silicon Solar Cells With Dopant Segregation During Nickel Silicidation

J. Knoch, T. Pletzer, H. Windgassen, 2014, IEEE Journal of Photovoltaics.

Sub-40 nm SOI V-groove n-MOSFETs

J. Scholvin, P. Solomon, J. D. del Alamo, 2002, IEEE Electron Device Letters.

Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

J. Knoch, S. Mantl, Q.T. Zhao, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Impact of variability on the performance of SOI Schottky barrier MOSFETs

J. Knoch, S. Mantl, M. Zhang, 2009 .

One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance Limit

H. Riel, J. Knoch, H. Schmid, 2008, 2008 Device Research Conference.

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs

J. Knoch, S. Mantl, J. Appenzeller, 2007, IEEE Electron Device Letters.

Gate-controlled doping in carbon-based FETs

Joachim Knoch, Marcel Müller, Thomas Grap, 2013, 2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC).

Nanowire FET Simulations Based on the Nonequilibrium Green’s Function Formalism

J. Knoch, K. Indlekofer, 2015 .

Nanowire Tunnel FETs - Device Structure, Transistor Dimension and Material Choice

J. Knoch, 2011 .

Doping limits of grown in situ doped silicon nanowires using phosphine.

H. Riel, J. Knoch, H. Schmid, 2009, Nano letters.

Properties of Metal–Graphene Contacts

Joachim Knoch, Joerg Appenzeller, Zhihong Chen, 2012, IEEE Transactions on Nanotechnology.

Characterization of Fully Silicided Source/Drain SOI UTBB nMOSFETs at Cryogenic Temperatures

J. Knoch, D. Grützmacher, S. Hoffmann‐Eifert, 2022, Solid-State Electronics.

Interface Engineering for Steep Slope Cryogenic MOSFETs

J. Knoch, L. Schreiber, S. Scholz, 2022, IEEE Electron Device Letters.

Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI

B. Lengeler, J. Knoch, J. Appenzeller, 2002 .

Modeling and realization of an ultra-short channel MOSFET

B. Lengeler, J. Knoch, 2001 .

Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors

S. Wind, J. Appenzeller, J. Knoch, 2002, Digest. International Electron Devices Meeting,.