J. Appenzeller

发表

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

J. Knoch, S. Mantl, J. Appenzeller, 2007 .

A novel concept for field-effect transistors - the tunneling carbon nanotube FET

J. Knoch, J. Appenzeller, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Tunneling phenomena in carbon nanotube field‐effect transistors

J. Knoch, J. Appenzeller, 2008 .

Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor

P. Avouris, J. Appenzeller, Zhihong Chen, 2008, IEEE Electron Device Letters.

High-performance carbon nanotube field-effect transistor with tunable polarities

J. Knoch, P. Avouris, J. Appenzeller, 2005, IEEE Transactions on Nanotechnology.

Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors.

M. Radosavljevic, J. Knoch, P. Avouris, 2004, Physical review letters.

Dielectric Engineered Tunnel Field-Effect Transistor

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2015, IEEE Electron Device Letters.

Novel carbon nanotube FET design with tunable polarity

P. Avouris, J. Appenzeller, Yu-Ming Lin, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Carbon nanotube transistors and logic circuits

P. Avouris, R. Martel, J. Appenzeller, 2002 .

Transport in ropes of carbon nanotubes: Contact barriers and luttinger liquid theory

B. Lengeler, J. Appenzeller, T. Hunger, 2004 .

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Joachim Knoch, Joerg Appenzeller, S. Mantl, 2007 .

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

Min Zhang, J. Knoch, S. Mantl, 2006, IEEE Transactions on Electron Devices.

Carbon Nanotube Field-effect Transistors-The Importance of Being Small

Joachim Knoch, Joerg Appenzeller, J. Knoch, 2006 .

Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

J. Knoch, S. Mantl, J. Appenzeller, 2005 .

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2018, IEEE Transactions on Electron Devices.

Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

J. A. del Alamo, Paul M. Solomon, Joachim Knoch, 2000 .

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Gerhard Klimeck, Joerg Appenzeller, Hesameddin Ilatikhameneh, 2015, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

J. T. Smith, S. Mantl, J. Appenzeller, 2011, IEEE Transactions on Electron Devices.

Demonstration of a pseudo-magnetization based simultaneous write and read operation in a Co60Fe20B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure

J. Appenzeller, Tingting Shen, V. Ostwal, 2019, Scientific Reports.

Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

Richard Martel, Joerg Appenzeller, Shalom J. Wind, 2002 .

Where does the current flow in two-dimensional layered systems?

J. Appenzeller, Saptarshi Das, 2013, Nano letters.

High-performance dual-gate carbon nanotube FETs with 40-nm gate length

P. Avouris, J. Appenzeller, Zhihong Chen, 2005, IEEE Electron Device Letters.

Substrate Gating of Contact Resistance in Graphene Transistors

Mark S. Lundstrom, J. Appenzeller, T. Low, 2011, IEEE Transactions on Electron Devices.

An all-graphene radio frequency low noise amplifier

J. Appenzeller, Saptarshi Das, 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

J. Appenzeller, A. Penumatcha, R. Salazar, 2015, Nature Communications.

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

F. Zhang, J. Appenzeller, A. Davydov, 2018, Nature Materials.

Carbon nanotubes as potential building blocks for future nanoelectronics

M. Radosavljevic, S. Wind, P. Avouris, 2002 .

An Integrated Logic Circuit Assembled on a Single Carbon Nanotube

A. Rinzler, S. Wind, P. Solomon, 2006, Science.

High performance multilayer MoS2 transistors with scandium contacts.

J. Appenzeller, Hong-Yan Chen, Saptarshi Das, 2013, Nano letters.

Spin-torque devices with hard axis initialization as Stochastic Binary Neurons

J. Appenzeller, Zhihong Chen, V. Ostwal, 2018, Scientific Reports.

Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides.

J. Appenzeller, Saptarshi Das, R. Salazar, 2014, ACS nano.

Hardware implementation of Bayesian network building blocks with stochastic spintronic devices

S. Datta, J. Appenzeller, Zhihong Chen, 2020, Scientific Reports.

Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field.

J. Appenzeller, Zhihong Chen, A. Penumatcha, 2013, Nano letters.

Lateral scaling in carbon-nanotube field-effect transistors.

S. Wind, P. Avouris, J. Appenzeller, 2003, Physical review letters.

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

J. Knoch, J. Appenzeller, Joerg Appenzeller, 2010, IEEE Electron Device Letters.

FeTRAM. An organic ferroelectric material based novel random access memory cell.

J. Appenzeller, Saptarshi Das, 2011, Nano letters.

Measurement of carrier mobility in silicon nanowires.

Lidija Sekaric, Wilfried Haensch, Joerg Appenzeller, 2008, Nano letters.

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2015, IEEE Transactions on Electron Devices.

MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films.

Moon J. Kim, Gerhard Klimeck, J. Appenzeller, 2019, ACS applied materials & interfaces.

Multi-layer graphene field-effect transistors for improved device performance

J. Appenzeller, Y. Sui, 2009, 2009 Device Research Conference.

Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices

J. Appenzeller, Zhihong Chen, J. Appenzeller, 2008, 2008 IEEE International Electron Devices Meeting.

Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices

J. Appenzeller, 2003 .

Design Rules for High Performance Tunnel Transistors From 2-D Materials

Gerhard Klimeck, Joerg Appenzeller, Hesameddin Ilatikhameneh, 2016, IEEE Journal of the Electron Devices Society.

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Moon J. Kim, J. Appenzeller, R. Wallace, 2016, Nano letters.

WSe2 field effect transistors with enhanced ambipolar characteristics

Joerg Appenzeller, J. Appenzeller, Saptarshi Das, 2013 .

Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors

Richard Martel, Joerg Appenzeller, Shalom J. Wind, 2002 .

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2015, 1506.00077.

Scaling Theory of Electrically Doped 2D Transistors

Gerhard Klimeck, Joerg Appenzeller, Hesameddin Ilatikhameneh, 2015, IEEE Electron Device Letters.

Two-dimensional transistors with reconfigurable polarities for secure circuits

X. Hu, J. Appenzeller, Peng Wu, 2020 .

Exfoliated multilayer MoTe2 field-effect transistors

Huili Grace Xing, Wan Sik Hwang, Debdeep Jena, 2014 .

Ultrathin 600 ° C Wet Thermal Silicon Dioxide

Keith C. C. Chan, P. Solomon, J. Alamo, 1999 .

Improvement of spin transfer torque in asymmetric graphene devices.

J. Appenzeller, Zhihong Chen, A. Penumatcha, 2014, ACS nano.

Utilizing the unique properties of nanowire MOSFETs for RF applications.

Gerhard Klimeck, J. Appenzeller, D. Janes, 2013, Nano letters.

Transconductance Linearity Analysis of 1-D, Nanowire FETs in the Quantum Capacitance Limit

J. Appenzeller, D. Janes, A. Razavieh, 2013, IEEE Transactions on Electron Devices.

A new method to achieve RF linearity in SOI nanowire MOSFETs

Gerhard Klimeck, J. Appenzeller, D. Janes, 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

Spin-torque switching of a nano-magnet using giant spin hall effect

J. Appenzeller, Zhihong Chen, Suprem R. Das, 2015 .

Efficient Spin‐Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr2Ge2Te6

J. Appenzeller, Tingting Shen, V. Ostwal, 2020, Advanced materials.

High performance of potassium n-doped carbon nanotube field-effect transistors

J. Knoch, M. Radosavljevic, J. Appenzeller, 2004, cond-mat/0402350.

High-performance carbon nanotube field-effect transistor with tunable polarities

J. Knoch, P. Avouris, J. Appenzeller, 2005, IEEE Transactions on Nanotechnology.

Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.

Xiuling Li, Gerhard Klimeck, J. Appenzeller, 2014, ACS nano.

Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices

J. Appenzeller, Zhihong Chen, Joerg Appenzeller, 2008, 2008 IEEE International Electron Devices Meeting.

Screening and interlayer coupling in multilayer graphene field-effect transistors.

J. Appenzeller, Y. Sui, 2009, Nano letters.

Nanowire electronics

J. Appenzeller, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Lateral scaling in carbon-nanotube field-effect transistors.

S. Wind, P. Avouris, J. Appenzeller, 2003, Physical review letters.

Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors

J. Knoch, J. Appenzeller, K. Indlekofer, 2005, cond-mat/0504746.

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Moon J. Kim, J. Appenzeller, R. Wallace, 2016, Nano letters.

Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes.

J. Knoch, P. Avouris, J. Appenzeller, 2005, Nano letters.

Extremely high electron mobilities in modulation doped Ga1−xInxAs/InP heterostructures grown by LP-MOVPE

R. Meyer, J. Appenzeller, H. Hardtdegen, 1992 .

Ionic gated WSe2 FETs: Towards transparent Schottky barriers

J. Appenzeller, Zhihong Chen, Saptarshi Das, 2014, 72nd Device Research Conference.

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

J. Appenzeller, A. Davydov, Huairuo Zhang, 2017, 1709.03835.

Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube

M. Fischetti, J. Appenzeller, K. Yngvesson, 2006, cond-mat/0604520.

High performance of potassium n-doped carbon nanotube field-effect transistors

M. Radosavljevic, J. Knoch, P. Avouris, 2004, cond-mat/0402350.

Optimization of modulation‐doped Ga1−xInxAs/InP heterostructures towards extremely high mobilities

R. Meyer, T. Schäpers, B. Lengeler, 1993 .

Optimized spin relaxation length in few layer graphene at room temperature

J. Appenzeller, Zhihong Chen, Chia-Ching Lin, 2012, 2012 International Electron Devices Meeting.

AC characterization of top-gated carbon nanotube field effect transistors

H. Wong, K. Jenkins, J. Appenzeller, 2003, International Semiconductor Device Research Symposium, 2003.

Electrical transport and 1/f noise in semiconducting carbon nanotubes

P. Avouris, J. Appenzeller, Zhihong Chen, 2007 .

Thickness-Dependent Study of High- Performance WS2-FETs With Ultrascaled Channel Lengths

J. Appenzeller, Zhihong Chen, C. Pang, 2021, IEEE Transactions on Electron Devices.

Preparation of highly transparent superconductor-semiconductor contacts

B. Lengeler, J. Knoch, J. Appenzeller, 2000 .

Spectroscopic measurements on the Andreev reflection probability as a function of temperature

J. Appenzeller, 2000 .

Observation of quantized conductance in split-gate In0.53Ga0.47As/In0.77Ga0.23As/InP point contacts using Cr/Au p-InP Schottky barriers

T. Schäpers, H. Lüth, J. Appenzeller, 1998 .

Investigation of characteristic scattering lengths in strained In 0.53 Ga 0.47 A s / I n 0.76 Ga 0.24 A s / I n P by means of hot ballistic electrons

T. Schäpers, D. Uhlisch, H. Lüth, 1998 .

Electric field induced semiconductor-to-metal phase transition in vertical MoTe

J. Appenzeller, A. Davydov, Huairuo Zhang, 2017 .

Understanding Coulomb Effects in Nanoscale Schottky-Barrier-FETs

J. Knoch, J. Appenzeller, K. Indlekofer, 2006, IEEE Transactions on Electron Devices.

Conductance Asymmetry of Graphene p-n Junction

Seokmin Hong, S. Datta, J. Appenzeller, 2008, IEEE Transactions on Electron Devices.

Exploration of channel width scaling and edge states in transition metal dichalcogenides

J. Appenzeller, J. Robinson, Chia-Hui Lee, 2018, Nano Research.

Coulomb drag between in-plane graphene double ribbons and the impact of the dielectric constant

J. Appenzeller, Hong-Yan Chen, 2013, Nano Research.

Synthesis of antimony-based nanowires using the simple vapor deposition method.

J. Appenzeller, Yunlong Zi, Yanjie Zhao, 2012, Chemphyschem : a European journal of chemical physics and physical chemistry.

Toward CMOS like devices from two-dimensional channel materials

J. Appenzeller, Peng Wu, 2019, APL Materials.

The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors.

Phaedon Avouris, Joachim Knoch, Joerg Appenzeller, 2005, Nano letters.

High resolution imaging and lithography with hard x rays using parabolic compound refractive lenses

Anatoly Snigirev, Irina Snigireva, Timm Weitkamp, 2002 .

A Novel Compound Synapse Using Probabilistic Spin–Orbit-Torque Switching for MTJ-Based Deep Neural Networks

Ramtin Zand, Joerg Appenzeller, Vaibhav Ostwal, 2019, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Quantized conductance in a split‐gate point contact based on a pseudomorphic InGaAs/InP heterostructure

T. Schäpers, B. Lengeler, H. Lüth, 1996 .

Carbon Nanotube Inter- and Intramolecular Logic Gates

P. Avouris, R. Martel, J. Appenzeller, 2001 .

Transistors - Fabrication, Device Physics, and Circuit Implications

S. Wind, R. Martel, J. Appenzeller, 2003 .

Memory applications from 2D materials

Peng Wu, Joerg Appenzeller, Chin-Sheng Pang, 2021, Applied Physics Reviews.

Electrical properties and transport in boron nitride nanotubes

M. Radosavljevic, P. Avouris, R. Martel, 2003 .

Controlling doping and carrier injection in carbon nanotube transistors

Richard Martel, Joerg Appenzeller, Vincent Derycke, 2002 .

Splitting of the subgap resistance peak in superconductor/two-dimensional electron gas contacts at high magnetic fields

T. Schäpers, D. Uhlisch, H. Lüth, 2000 .

Understanding contact gating in Schottky barrier transistors from 2D channels

J. Appenzeller, H. Ilatikhameneh, A. Prakash, 2017, Scientific Reports.

Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors.

J. Appenzeller, Tingting Shen, A. Penumatcha, 2016, ACS nano.

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation.

M. Zaghloul, J. Appenzeller, Zhihong Chen, 2021, Small.

On the scaling behavior of organic ferroelectric copolymer PVDF-TrFE for memory application

Joerg Appenzeller, J. Appenzeller, Saptarshi Das, 2012 .

Complementary Black Phosphorus Tunneling Field-Effect Transistors.

Gerhard Klimeck, Peng Wu, Joerg Appenzeller, 2018, ACS nano.

Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric Component.

J. Appenzeller, Peng Wu, 2020, ACS nano.

Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.

J. Appenzeller, Joshua T. Smith, Yanjie Zhao, 2011, Nano letters.

Screening and interlayer coupling in multilayer MoS2

J. Appenzeller, Saptarshi Das, 2013 .

Direct measurements of frequency response of carbon nanotube field effect transistors

Keith A. Jenkins, Joerg Appenzeller, K. Jenkins, 2005 .

Quantum transport in quasi one-dimensional In/sub 0.77/Ga/sub 0.23/As/InP rings

B. Lengeler, J. Appenzeller, H. Luth, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.

J. Appenzeller, D. Janes, Yunlong Zi, 2012, Nano letters.

Tunneling versus thermionic emission in one-dimensional semiconductors.

M. Radosavljevic, J. Knoch, P. Avouris, 2004, Physical review letters.

Experimental demonstration of nanomagnet networks as hardware for Ising computing

Supriyo Datta, Punyashloka Debashis, Rafatul Faria, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Multimode transport in a T-shaped quantum transistor

Joerg Appenzeller, J. Appenzeller, C. Schroer, 2000 .

On the Importance of Bandgap Formation in Graphene for Analog Device Applications

Joerg Appenzeller, J. Appenzeller, Saptarshi Das, 2011, IEEE Transactions on Nanotechnology.

Spin-torque devices with hard axis initialization as Stochastic Binary Neurons

J. Appenzeller, Zhihong Chen, V. Ostwal, 2018, Scientific Reports.

Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering

Phaedon Avouris, Yu-Ming Lin, Joerg Appenzeller, 2004 .

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2015, 1506.00077.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

J. Appenzeller, A. Penumatcha, R. Salazar, 2015, Nature Communications.

Observation of 1D behavior in Si nanowires: toward high-performance TFETs.

Gerhard Klimeck, J. Appenzeller, S. Mehrotra, 2012, Nano letters.

Broken-Gap Tunnel MOSFET: A Constant-Slope Sub-60-mV/decade Transistor

S. Das, J. T. Smith, J. T. Smith, 2011, IEEE Electron Device Letters.

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.

Feng Zhang, Tibor Grasser, Peng Wu, 2018, ACS nano.

Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.

Joerg Appenzeller, Vaibhav Ostwal, Ruiping Zhou, 2017, Nano letters.

First demonstration of band-to-band tunneling in black phosphorus

J. Appenzeller, A. Prakash, Peng Wu, 2017, 2017 75th Annual Device Research Conference (DRC).

Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors.

J. Appenzeller, A. Prakash, 2017, ACS nano.

A Predictive Compact Model for High-Performance Tunneling-Field Effect Transistors Approaching the Accuracy of NEGF Simulations

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2015 .

Tunability of short-channel effects in MoS2 field-effect devices.

J. Appenzeller, Feng Zhang, 2015, Nano letters.

Tunnel FET Compact Model

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2015 .

Investigation of the inter-tube coupling in single-wall nanotube ropes

B. Lengeler, P. Avouris, R. Martel, 2001 .

Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

J. Knoch, J. Appenzeller, 2002 .

On the Current Drive Capability of Low Dimensional Semiconductors: 1D versus 2D

J. Appenzeller, Y. Zhu, J. Appenzeller, 2015, Nanoscale Research Letters.

Spin–Orbit Torque-Controlled Magnetic Tunnel Junction With Low Thermal Stability for Tunable Random Number Generation

Joerg Appenzeller, Vaibhav Ostwal, J. Appenzeller, 2019, IEEE Magnetics Letters.

Electronic transport properties of a tilted graphene p-n junction

Joerg Appenzeller, Tony Low, J. Appenzeller, 2009, 0905.0710.

On the Voltage Gain of Complementary Graphene Voltage Amplifiers With Optimized Doping

Hong-Yan Chen, J. Appenzeller, J. Appenzeller, 2012, IEEE Electron Device Letters.

Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts

Joachim Knoch, Joerg Appenzeller, S. Mantl, 2005 .

Impact of the nanotube diameter on the performance of CNFETs

J. Knoch, P. Avouris, J. Appenzeller, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

J. Knoch, H. Xu, J. Appenzeller, 2016, Nanoscale Research Letters.

Effects of nanoscale contacts to silicon nanowires on contact resistance: Characterization and Modeling

J. Appenzeller, Joshua T. Smith, Yanjie Zhao, 2010, 68th Device Research Conference.

Frequency dependent characterization of transport properties in carbon nanotube transistors

David J. Frank, Joerg Appenzeller, D. Frank, 2004 .

Carbon Nanotube Inter-and Intramolecular Logic

R. Martel, J. Appenzeller, P. Avouris, 2001 .

Electronic transport in carbon nanotube field-effect transistors

J. Appenzeller, 2003, International Semiconductor Device Research Symposium, 2003.

New Results on Microwave and Terahertz Detection Using Metallic Single-Walled Carbon Nanotubes

E. Polizzi, J. Appenzeller, F. Rodríguez‐Morales, 2008 .

Ligand-induced dependence of charge transfer in nanotube-quantum dot heterostructures.

Stanislaus S. Wong, J. Appenzeller, R. Harrison, 2016, Nanoscale.

Probing the Dependence of Electron Transfer on Size and Coverage in Carbon Nanotube–Quantum Dot Heterostructures

Stanislaus S. Wong, J. Appenzeller, D. Fischer, 2015 .

Electric field control of interaction between magnons and quantum spin defects

V. Shalaev, J. Appenzeller, N. Dilley, 2020, Physical Review Research.

From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching

Supriyo Datta, Punyashloka Debashis, Joerg Appenzeller, 2020, Proceedings of the IEEE.

Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison

J. Knoch, J. Appenzeller, Saptarshi Das, 2016 .

Frequency response of top-gated carbon nanotube field-effect transistors

D. Neumayer, A. Grill, J. Appenzeller, 2004, IEEE Transactions on Nanotechnology.

Frequency kesponse of top-gated carbon nanotube field-effect transistors

D. V. Singh, A. Grill, K. Jenkins, 2013 .

Sub-40 nm SOI V-groove n-MOSFETs

J. Scholvin, P. Solomon, J. D. del Alamo, 2002, IEEE Electron Device Letters.

An Ultra-fast Multi-level MoTe2-based RRAM

A. V. Davydov, J.P. Campbell, A. Shakouri, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Electrically doped WTe2 tunnel transistors

Gerhard Klimeck, J. Appenzeller, H. Ilatikhameneh, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Measurement of carrier mobility in silicon nanowires.

W. Haensch, L. Sekaric, M. Rooks, 2008, Nano letters.

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs

J. Knoch, S. Mantl, J. Appenzeller, 2007, IEEE Electron Device Letters.

Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.

Xiuling Li, Gerhard Klimeck, J. Appenzeller, 2014, ACS nano.

Graphene-based frequency tripler.

J. Appenzeller, Hong-Yan Chen, 2012, Nano letters.

Spin-orbit torque based magnetization switching in Pt/Cu/[Co/Ni]5 multilayer structures

J. Appenzeller, A. Kent, V. Ostwal, 2017 .

Properties of Metal–Graphene Contacts

Joachim Knoch, Joerg Appenzeller, Zhihong Chen, 2012, IEEE Transactions on Nanotechnology.