S. Lefebvre

发表

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

Stéphane Lefebvre, Zoubir Khatir, L. Dupont, 2007, Microelectron. Reliab..

Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

S. Lefebvre, A. Bouzourene, Z. Khatir, 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

Robustness in short-circuit Mode of SiC MOSFETs

Hervé Morel, Cyril Buttay, Stéphane Lefebvre, 2015 .

SiC MOSFETs robustness for diode-less applications

S. Lefebvre, H. Morel, D. Labrousse, 2018 .

Estimation of the Losses in Si and SiC Power Modules for Automotive Applications

S. Lefebvre, M. Petit, Dounia Oustad, 2017 .

Thermal management for GaN power devices mounted on PCB substrates

S. Lefebvre, D. Labrousse, E. Labouré, 2017, 2017 IEEE International Workshop On Integrated Power Packaging (IWIPP).

A method to improve the reliability and the fatigue life of power device substrates

S. Lefebvre, S. Pommier, S. Pattofatto, 2013 .

Thermal fatigue and failure of electronic power device substrates

S. Lefebvre, S. Pommier, S. Pattofatto, 2009 .

Ageing Test Results of low voltage MOSFET Modules for electrical vehicles

L. Dupont, Z. Khatir, S. Lefebvre, 2007, 2007 European Conference on Power Electronics and Applications.

Characterisation of power modules ceramic substrates for reliability aspects

Stéphane Lefebvre, Zoubir Khatir, S. Bontemps, 2009, Microelectron. Reliab..

Robustness of SiC MOSFETs in short-circuit mode

S. Lefebvre, H. Morel, Cheng Chen, 2015 .

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Stéphane Lefebvre, Zoubir Khatir, L. Dupont, 2006, Microelectron. Reliab..

Estimation of a surface current distribution from 2D magnetic field measurements

Stéphane Lefebvre, Tien Anh Nguyen, G. Chaplier, 2011 .

PCB-Embedding of Power Dies Using Pressed Metal Foam

S. Lefebvre, D. Labrousse, M. Petit, 2019 .

ESTIMATION OF THE AGEING OF METALLIC LAYERS IN POWER SEMICONDUCTOR MODULES USING THE EDDY CURRENT METHOD AND ARTIFICIAL NEURAL NETWORKS

S. Lefebvre, P. Joubert, T. Nguyen, 2014 .

Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

A. Irace, S. Lefebvre, R. Ruffilli, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Non-contact monitoring of current distribution in a PCB using 3D magnetic sensor

Do Phuong Uyen Tran, S. Lefebvre, P. Joubert, 2022, 2022 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP).

On-line temperature measurement during power cycle of PCB-embedded diode

S. Lefebvre, M. Berkani, M. Petit, 2021, Microelectronics Reliability.

Study of short-circuit robustness of p-GaN and cascode transistors

S. Lefebvre, C. Gautier, M. Landel, 2022, Microelectronics Reliability.

In-depth investigation of metallization aging in power MOSFETs

R. Ruffilli, Mounira Berkani, Philippe Dupuy, 2015, Microelectron. Reliab..

Electrical characterizations and evaluation of thermo-mechanical stresses of a power module dedicated to high temperature applications

L. Dupont, Z. Khatir, S. Lefebvre, 2005, 2005 European Conference on Power Electronics and Applications.

Evaluation of thermo-mechanical stresses of a power module dedicated to high temperature applications

L. Dupont, Z. Khatir, S. Lefebvre, 2005 .

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen, Hervé Morel, Cyril Buttay, 2015, Microelectron. Reliab..

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

Mounira Berkani, Stéphane Lefebvre, Frédéric Richardeau, 2011, IEEE Transactions on Industrial Electronics.

Estimating Current Distributions in Power Semiconductor Dies Under Aging Conditions: Bond Wire Liftoff and Aluminum Reconstruction

Serge Bontemps, Pierre-Yves Joubert, Denis Labrousse, 2015, IEEE Transactions on Components, Packaging and Manufacturing Technology.

Boundary element analysis of thermal fatigue effects on high power IGBT modules

Stéphane Lefebvre, Zoubir Khatir, Z. Khatir, 2004, Microelectron. Reliab..

Experimental And Numerical Characterization Of PCB-Embedded Power Dies Using Solderless Pressed Metal Foam

S. Lefebvre, N. Schmitt, M. Berkani, 2020, 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

Stéphane Lefebvre, Zoubir Khatir, D. Othman, 2012, Microelectron. Reliab..

Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal Behavior

Francois Costa, Cyrille Gautier, Stephane Lefebvre, 2014, IEEE Transactions on Power Electronics.

Robustness of 1.2 kV SiC MOSFET devices

Mounira Berkani, Stéphane Lefebvre, Zoubir Khatir, 2013, Microelectron. Reliab..

Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Stéphane Lefebvre, Frédéric Richardeau, Jean-Marc Blaquière, 2018, Microelectron. Reliab..

Mechanisms of power module source metal degradation during electro-thermal aging

R. Ruffilli, Mounira Berkani, Philippe Dupuy, 2017, Microelectron. Reliab..

Power Cycling Test Circuit for Thermal Fatigue Resistance Analysis of Solder Joints in IGBT

Zoubir Khatir, Stéphane Lefebvre, Laurent Dupont, 2003 .

Analyse de la robustesse des MOSFET SiC pour les applications diode-less

S. Lefebvre, H. Morel, D. Labrousse, 2016 .

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Stéphane Lefebvre, S. Bontemps, S. Pietranico, 2011, Microelectron. Reliab..

New definition of critical energy for SiC MOSFET robustness under short circuit operations: The repetitive critical energy

S. Lefebvre, H. Morel, D. Labrousse, 2020, Microelectronics Reliability.

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Stéphane Lefebvre, Zoubir Khatir, F. Saint-Eve, 2007, Microelectron. Reliab..

Design of a flyback transformer using a stress-annealed iron-based nanocrystalline alloy

S. Lefebvre, F. Alves, F. Costa, 2002 .

Temperature-Level Effect on Solder Lifetime During Thermal Cycling of Power Modules

Z. Khatir, M. Bouarroudj, S. Lefebvre, 2008, IEEE Transactions on Device and Materials Reliability.

Investigation on the junction temperature of planar power 4H-SiC MOSFET under short circuit operation

S. Lefebvre, S. Azzopardi, T. Nguyen, 2022, Microelectronics Reliability.

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Stéphane Lefebvre, Frédéric Richardeau, F. Boige, 2017, Microelectron. Reliab..

Aluminum metallization and wire bonding aging in power MOSFET modules

Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, 2018 .

Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management

Stéphane Lefebvre, Frédéric Richardeau, François Boige, 2018, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).

Discrete Power Semiconductor Losses Versus Junction Temperature Estimation Based on Thermal Impedance Curves

Do Phuong Uyen Tran, Y. Avenas, S. Lefebvre, 2020, IEEE Transactions on Components, Packaging and Manufacturing Technology.

Analysis of the impact of manufacturing dissymmetry on current distribution for magnetically coupled interleaved inverters

Eric Monmasson, Mickael Petit, Cyrille Gautier, 2020, 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

Stéphane Lefebvre, Frédéric Richardeau, F. Boige, 2019, Math. Comput. Simul..

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition

Amrane Oukaour, Stéphane Lefebvre, M. Bouarroudj-Berkani, 2011, Microelectron. Reliab..

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Hervé Morel, Cyril Buttay, Stéphane Lefebvre, 2018, Microelectron. Reliab..

Effect of short circuit aging on safe operating area of SiC MOSFET

Stéphane Lefebvre, Stephane Azzopardi, Tien Anh Nguyen, 2018, Microelectron. Reliab..

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Michele Riccio, Andrea Irace, Mounira Berkani, 2014, Microelectron. Reliab..

A Method for Endurance Testing of Enameled Round and Rectangular Wires for Motors Controlled by SiC-based Inverters

S. Lefebvre, S. Hlioui, A. Bukharkin, 2021, IEEE transactions on dielectrics and electrical insulation.