D. Robbins

发表

Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

J. Pendry, D. Sievenpiper, M. Sickmiller, 2001 .

Magnetism from conductors and enhanced nonlinear phenomena

J. Pendry, A. Holden, W. Stewart, 1999 .

Low frequency plasmons in thin-wire structures

J. Pendry, A. Holden, W. Stewart, 1998 .

Schottky gating high mobility Si/Si1-xGex 2D electron systems

A. C. Churchill, R. B. Dunford, D. Robbins, 2000 .

Inter-edge-mode scattering in a high-mobility strained silicon two-dimensional electron system

A. C. Churchill, R. B. Dunford, D. Robbins, 2000 .

Si/SiGe n-type inverted modulation doping using ion implantation

A. C. Churchill, R. B. Dunford, D. Robbins, 2000 .

Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates

A. C. Churchill, D. Wallis, D. Robbins, 1998 .

Far-infrared cyclotron resonance study of the effect of strain and localisation in Si/SiGe two dimensional electron gases

A. C. Churchill, D. Robbins, M. Pepper, 1998 .

Electroluminescence from a pseudomorphic Si0.8Ge0.2 alloy

D. Robbins, W. Y. Leong, P. Calcott, 1991 .

Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror

D. Robbins, R. Carline, V. Nayar, 1998, IEEE Photonics Technology Letters.

In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures

C. Pickering, D. Robbins, W. Y. Leong, 1993 .

Spectroscopic ellipsometry of epitaxial Si {100} surfaces

C. Pickering, D. Robbins, A. Pidduck, 1992 .

Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layers

C. Pickering, D. Robbins, S. Barnett, 1993 .

Spectroscopic ellipsometry of Si1−xGex epilayers of arbitrary composition 0≤x≤0.255

C. Pickering, D. Robbins, W. Y. Leong, 1994 .

Real‐time monitoring of Si1–xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

C. Pickering, D. Robbins, D. Hope, 1995 .

Absorption in p‐Si1−xGex quantum well detectors

D. Robbins, W. Y. Leong, R. Carline, 1995 .

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si 1−x Ge x Heterostructures and Multiuantum Wells

C. Pickering, D. Robbins, W. Y. Leong, 1993 .

Electrical properties and uniformity of two dimensional electron gases grown on cleaned SiGe virtual substrates

Douglas J. Paul, A. C. Churchill, D. Wallis, 1998 .

Impact ionization in submicron silicon devices

Chee Hing Tan, John P. R. David, G. J. Rees, 2004 .

Avalanche noise measurement in thin Si p+-i-n+ diodes

Chee Hing Tan, John P. R. David, Richard C. Tozer, 2000 .

A study of base contact formation in epitaxial Si/Si 0.88 Ge 0.12 HBT structures

C. Pickering, D. Robbins, F. Cristiano, 1996 .

A Calmparison of MOVPE Grown Strained and Unstrained MQW Lasers Incorporating Continuously Graded or Single Composition Confinement Layers

J. Thompson, A. Wood, A. Moseley, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Anomalous DLTS signals due to small fluctuations in the reverse bias voltage on a Si diode

D. Robbins, W. Y. Leong, 1989 .

Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions

A. C. Churchill, D. Wallis, D. Robbins, 1998 .

Real‐time spectroscopic ellipsometry monitoring of Si1−xGex/Si epitaxial growth

C. Pickering, D. Robbins, D. Hope, 1995 .

Spectroscopic ellipsometry of Si1-xGex multi-quantum wells

C. Pickering, D. Robbins, S. Barnett, 1993 .

Photoreflectance of strained Si1-xGex epilayers (0.07≤x≥0.26) and comparison with spectroscopic ellipsometry

C. Pickering, D. Robbins, T. Hosea, 1994 .

Towards SiGe Terahertz VCSELs

A. G. Cullis, R. Soref, P. Harrison, 2004 .