Y. Hsieh

发表

A 32nm CMOS Low Power SoC Platform Technology for Foundry Applications with Functional High Density SRAM

Shien-Yang Wu, M. Chiang, J. Liaw, 2007, 2007 IEEE International Electron Devices Meeting.

Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors

F. Ren, S. Pearton, Y. Hsieh, 2015 .

Dual ionic gate transistor: a device to induce extreme electric fields in 2D materials

Y. Hsieh, K. Bolotin, J. Kirchhof, 2021 .

A highly manufacturable 28nm CMOS low power platform technology with fully functional 64Mb SRAM using dual/tripe gate oxide process

C.C. Chen, Shien-Yang Wu, S.Y. Chang, 2006, 2009 Symposium on VLSI Technology.

Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

F. Ren, S. Pearton, Y. Hsieh, 2014 .

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

A. Allerman, J. Kim, F. Ren, 2014 .

Ultrastrong adhesion of fluorinated graphene on a substrate: In situ electrochemical conversion to ionic-covalent bonding at the interface

Y. Hsieh, C. Su, Ju Li, 2020 .

Role of Electric Field, Defects and Radiation Damage in Determining Reliability in AlGaN/GaN High Electron Mobility Transistors

F. Ren, S. Pearton, Y. Hsieh, 2015 .

Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

David J. Smith, F. Ren, S. Pearton, 2014 .

Pool Boiling Heat Transfer Enhanced by Fluorinated Graphene as Atomic Layered Modifiers.

Y. Hsieh, C. Su, Chien-Yuh Yang, 2020, ACS applied materials & interfaces.

In situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability.

Y. Hsieh, C. Su, Cheng-Chun Huang, 2020, ACS applied materials & interfaces.

Effects of BEOL copper CMP process on TDDB for direct polishing ultra-low k dielectric cu interconnects at 28nm technology node and beyond

J. Y. Wu, Y. M. Lin, C. H. Chen, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Generating intense electric fields in 2D materials by dual ionic gating

Y. Hsieh, K. Bolotin, K. Greben, 2021, Nature Communications.

Generating intense electric fields in 2D materials by dual ionic gating

Y. Hsieh, K. Bolotin, K. Greben, 2021, Nature Communications.

Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled

Y. Hsieh, C. Su, Cheng-Chun Huang, 2019, Nanotechnology.

Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

A. Allerman, F. Ren, S. Pearton, 2014 .

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

F. Ren, S. Pearton, Y. Hsieh, 2015 .