S. Skordas

发表

Prototype of multi-stacked memory wafers using low-temperature oxide bonding and ultra-fine-dimension copper through-silicon via interconnects

T. Graves-abe, K. Winstel, D. Berger, 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

D. Corliss, T. Standaert, R. Wong, 2017, 2017 Symposium on VLSI Technology.

Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology

T. Graves-abe, C. Kothandaraman, B. Himmel, 2014 .

Robust Ultrathin (20-25 nm)Trilayer Dielectric Low k Cu Damascene Cap for Sub-30 nm Nanoelectric Devices

Stephan A. Cohen, Yiheng Xu, D. Edelstein, 2012, ECS Transactions.

Electrical properties of ultrathin Al_2O_3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications

E. Eisenbraun, A. Kaloyeros, E. Gusev, 2005 .

Chemical Vapor Deposition of Ru and RuO 2 for Gate Electrode Applications

E. Eisenbraun, S. Skordas, S. Consiglio, 2002 .

Low-Temperature Oxide Wafer Bonding for 3-D Integration: Chemistry of Bulk Oxide Matters

Wei Lin, S. Skordas, A. Madan, 2014, IEEE Transactions on Semiconductor Manufacturing.

Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications

E. Eisenbraun, A. Kaloyeros, S. Skordas, 2004 .

A study of ruthenium ultrathin film nucleation on pretreated SiO_2 and Hf–silicate dielectric surfaces

E. Eisenbraun, A. Kaloyeros, S. Skordas, 2007 .

Low-temperature metalorganic chemical vapor deposition of Al_2O_3 for advanced complementary metal-oxide semiconductor gate dielectric applications

E. Eisenbraun, A. Kaloyeros, S. Skordas, 2003 .

Structural study of Rb and Cl coadsorption on Cu(111): a case of overlayer compound formation

D. P. Woodruff, Robert G. Jones, S. Skordas, 1997 .

Study of the electronic structure of TiO2(110) and Cs/TiO2(110) with metastable impact electron spectroscopy and ultraviolet photoemission spectroscopy (HeI)

S. Skordas, V. Kempter, M. Brause, 2000 .

Surface Energy Characterization for Die-Level Cu Hybrid Bonding

J. Knickerbocker, S. Skordas, D. Mcherron, 2022, 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Metallorganic Chemical Vapor Deposition of Hafnium Silicate Thin Films Using a Dual Source Dimethyl-alkylamido Approach

E. Eisenbraun, A. Kaloyeros, S. Skordas, 2006 .

Particle reduction in back end of line plasma-etching process: CFM: Contamination free manufacturing

S. Skordas, J. Shearer, V. Pai, 2018, 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration

R. Hannon, S. Kanakasabapathy, A. Upham, 2012, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration.

Plasma Activated Low-temperature Die-level Direct Bonding with Advanced Wafer Dicing Technologies for 3D Heterogeneous Integration

Dishit P. Parekh, S. Skordas, D. Mcherron, 2021, 2021 IEEE 71st Electronic Components and Technology Conference (ECTC).

Functional Testing of AI Cores through Thinned 3D I/O Buffer Dies in 3D Die-Stacked Modules

S. Skordas, D. Mcherron, K. Hosokawa, 2022, 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).

Three-dimensional wafer stacking using Cu TSV integrated with 45nm high performance SOI-CMOS embedded DRAM technology

Toshiaki Kirihata, John Golz, Alex Hubbard, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).