J. Kelly

发表

Prototype of multi-stacked memory wafers using low-temperature oxide bonding and ultra-fine-dimension copper through-silicon via interconnects

T. Graves-abe, K. Winstel, D. Berger, 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals

A. Simon, D. Edelstein, A. Uedono, 2012, 2012 International Electron Devices Meeting.

Robust and low cost copper contact application for low power device at 32 nm-Node and beyond

M. Takayanagi, K. Ishimaru, J. Kelly, 2009, 2009 IEEE International Interconnect Technology Conference.

Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires

F. Mont, C.-K. Hu, J. Bruley, 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

An aluminum resist substrate for microfabrication by LIGA.

S. K. Griffiths, D. M. Skala, J. Kelly, 2005 .

Resist substrate studies for LIGA microfabrication with application to a new anodized aluminum substrate

S. K. Griffiths, D. M. Skala, J. Kelly, 2005 .

Electrochemical Aspects of the Beveling of Sputtered Permalloy Films

J. Kelly, G. Koel, 1978 .

The Nucleation Reaction on Photosensitive TiO2 Films

J. Kelly, J. K. Vondeling, 1975 .

High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility

A. Simon, D. Edelstein, C. Cabral, 2010, 2010 International Electron Devices Meeting.

Electrodeposition of Ni from Low-Temperature Sulfamate Electrolytes I. Electrochemistry and Film Stress

J. Kelly, A. Talin, S. Goods, 2006 .

Electrodeposition of Ni from Low-Temperature Sulfamate Electrolytes II. Properties and Structure of Electrodeposits

R. M. Watson, J. Kelly, J. Michael, 2006 .

Binding site size limit of the 2:1 pyrrole-imidazole polyamide-DNA motif.

J. Kelly, P. Dervan, E. Baird, 1996, Proceedings of the National Academy of Sciences of the United States of America.

48nm Pitch cu dual-damascene interconnects using self aligned double patterning scheme

J. Kelly, C. Koay, Yunpeng Yin, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Annealing Effects on Mechanical and Transport Properties of Ni and Ni-Alloy Electrodeposits

J. Kelly, N. Yang, T. Borca-Tasciuc, 2006, Journal of Microelectromechanical Systems.

Characterization of twinning in electrodeposited Ni–Mn alloys

J. Kelly, N. Yang, A. Talin, 2004 .

Improvement of current distribution uniformity on substrates for microelectromechanical systems

A. West, J. Kelly, J. Hachman, 2004 .

Three-Dimensional Structuring of Electrodeposited Cu-Co Multilayer Alloys

M. Cantoni, J. Kelly, D. Landolt, 2001 .

Experimental Study of the Microstructure and Stress of Electroplated Gold for Microsystem Applications

J. Kelly, N. Yang, T. Headley, 2003 .

THERMAL STABILITY OF STRUCTURALLY RELATED PHTHALOCYANINE RING AND CARBORANE GROUP-CONTAINING INTERMEDIATE AND MODEL COMPOUNDS*

J. Kelly, A. Stein, A. D. Delman, 1969 .

Thermal stability of structurally related polymers containing carborane and phthalocyanine groups

J. Kelly, A. D. Delman, B. B. Simms, 1970 .

Copper Deposition in the Presence of Polyethylene Glycol I. Quartz Crystal Microbalance Study

Alan C. West, A. West, J. Kelly, 1998 .

Thermal stability of Ni–Mn electrodeposits

J. Kelly, A. Talin, E. Marquis, 2006 .

Future on-chip interconnect metallization and electromigration

Raghuveer Patlolla, Huai Huang, James J. Kelly, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Copper Deposition in the Presence of Polyethylene Glycol II. Electrochemical Impedance Spectroscopy

Alan C. West, A. West, J. Kelly, 1998 .

Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch

R. G. Southwick, M. Wang, H. Huang, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Cobalt interconnect on same copper barrier process integration at the 7nm node

E. T. Ryan, T. Standaert, W. Wang, 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

Leveling and Microstructural Effects of Additives for Copper Electrodeposition

A. West, J. Kelly, Chunyan Tian, 1999 .

Experimental study of nanoscale Co damascene BEOL interconnect structures

D. Edelstein, J. Kelly, B. Peethala, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Electrodeposition of Cu on Ta-Based Layers I. Electrodeposition on Ta

J. Kelly, H. Deligianni, Min Zheng, 2007 .

Effects of current density on the structure of Ni and Ni–Mn electrodeposits

J. Kelly, J. Michael, A. Talin, 2005 .

Electrodeposited nickel–manganese: an alloy for microsystem applications

J. Kelly, N. Yang, S. Goods, 2004 .

High Performance Nanostructured Ni-Mn Alloy for Microsystem Applications

J. Kelly, N. Yang, S. Goods, 2003 .

Experimental study of NiFe and CoFe throughmask electrodeposition of high aspect ratio features

J. Kelly, N. Yang, 2005 .

Additive Effects during Pulsed Deposition of Cu‐Co Nanostructures

J. Kelly, D. Landolt, P. Bradley, 2000 .

Electrochemical Quartz Crystal Microbalance Study of Additive Effects in Pulsed Deposition of Cu‐Co Alloys

J. Kelly, D. Landolt, P. Kern, 2000 .

Mechanism of Co Liner as Enhancement Layer for Cu Interconnect Gap-Fill

D. Edelstein, J. Kelly, T. Spooner, 2013 .

Photocathodic deposition of gold alloys for Ohmic contacts to III–V materials

J. Kelly, A. Valster, J. Jacobs, 1988 .

Electrolyte Additive Chemistry and Feature Size-Dependent Impurity Incorporation for Cu Interconnects

J. Kelly, J. Demarest, Chao-Kun Hu, 2012, ECS Transactions.

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

D. Liu, P. Oldiges, N. Loubet, 2016, 2016 IEEE Symposium on VLSI Technology.

CVD Co and its application to Cu damascene interconnections

A. Simon, D. Edelstein, C. Cabral, 2010, 2010 IEEE International Interconnect Technology Conference.

In-situ scanning probe microscopy of electrodeposited nickel.

J. Kelly, D. Dibble, 2004 .

Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

Jie Yang, Terence B. Hook, Andreas Knorr, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).