N. Goldsman

发表

An Antenna Co-Design Dual Band RF Energy Harvester

Bo Li, Xi Shao, Neil Goldsman, 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.

Fabrication of flexible ultracapacitor/galvanic cell hybrids using advanced nanoparticle coating technology

Brent E. Boerger, M. Peckerar, N. Goldsman, 2011 .

A novel high energy density flexible galvanic cell

M. Peckerar, N. Goldsman, M. Dornajafi, 2011 .

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques

N. Goldsman, M. Gurfinkel, Y. Shapira, 2008, IEEE Transactions on Electron Devices.

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

N. Goldsman, P. Abshire, B. Nouri, 2010, IEEE Sensors Journal.

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

S. Selberherr, R. Dutton, C. Jungemann, 1994 .

Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes

N. Goldsman, G. Pennington, 2003 .

Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

N. Goldsman, J. McGarrity, G. Pennington, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation

N. Goldsman, J. Frey, L. Henrickson, 1991 .

Reconciliation of a hot-electron distribution function with the lucky electron-exponential model in silicon

N. Goldsman, J. Frey, L. Henrickson, 1990, IEEE Electron Device Letters.

Electron transport and full-band electron-phonon interactions in graphene

N. Goldsman, A. Akturk, 2008 .

Calculation of impact ionization coefficients with a third‐order Legendre polynomial expansion of the distribution function

N. Goldsman, K. Hennacy, Shiuh-Luen Wang, 1992 .

SELF-CONSISTENT MODELING OF MOSFET QUANTUM EFFECTS BY SOLVING THE SCHRÖDINGER AND BOLTZMANN SYSTEM OF EQUATIONS

N. Goldsman, Chung-Kuang Huang, 2003 .

Low-field semiclassical carrier transport in semiconducting carbon nanotubes

N. Goldsman, G. Pennington, 2005 .

High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

N. Goldsman, A. Lelis, A. Akturk, 2009 .

A Physical Model of High Temperature 4H-SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2008, IEEE Transactions on Electron Devices.

Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors

N. Goldsman, C. Scozzie, A. Lelis, 2002 .

Deterministic MOSFET simulation using a generalized spherical harmonic expansion of the Boltzmann equation

N. Goldsman, I. Mayergoyz, K. Hennacy, 1995 .

An efficient physics-based gate current calculation by solving space-dependent Boltzmann transport equation

N. Goldsman, I. Mayergoyz, Hongchin Lin, 1995, Proceedings of the Eleventh Biennial University/Government/ Industry Microelectronics Symposium.

A generalized Legendre polynomial/sparse matrix approach for determining the distribution function in non-polar semiconductors

N. Goldsman, K. Hennacy, 1993 .

Determination of space-dependent electron distribution function by combined use of energy and Boltzmann transport equations: improvement, evaluation, and explanation

N. Goldsman, K. Hennacy, Shiuh-Luen Wang, 1992 .

An efficient deterministic solution of the space-dependent Boltzmann transport equation for silicon

N. Goldsman, I. Mayergoyz, Hongchin Lin, 1992 .

Device modeling by deterministic self-consistent solution of Poisson and Boltzmann transport equations

N. Goldsman, I. Mayergoyz, Hongchin Lin, 1992 .

An efficient solution of the Boltzmann transport equation which includes the Pauli exclusion principle

N. Goldsman, Hongchin Lin, 1991 .

Efficient calculation of ionization coefficients in silicon from the energy distribution function

N. Goldsman, J. Frey, Yujie Wu, 1990 .

Electron energy distribution for calculation of gate leakage current in MOSFETs

N. Goldsman, J. Frey, 1988 .

Efficient and accurate use of the energy transport method in device simulation

N. Goldsman, J. Frey, 1988 .

A physically designed 2.2 GHz OOK receiver for minimum power wireless sensor network applications

N. Goldsman, T. Salter, Bo Yang, 2007, 2007 International Semiconductor Device Research Symposium.

A planar dual-band antenna design for RF energy harvesting applications

X. Shao, Negin Shahshahan, N. Goldsman, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Numerical Modeling and Characterization of n-Channel 4H-SiC Double-Diffused Vertical Power MOSFET

N. Goldsman, A. Lelis, Jianzhou Wu, 2005, 2005 International Semiconductor Device Research Symposium.

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

J. Suehle, N. Goldsman, M. Gurfinkel, 2008, IEEE Transactions on Electron Devices.

Improved RF power harvesting circuit design

N. Goldsman, G. Metze, N. Goldsman, 2007, 2007 International Semiconductor Device Research Symposium.

An Impulse-Response Based Methodology for Modeling Complex Interconnect Networks

N. Goldsman, Z. Dilli, A. Akturk, 2005, 2005 International Semiconductor Device Research Symposium.

Unusually strong temperature dependence of graphene electron mobility

N. Goldsman, A. Akturk, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

EO/IR sensors development using zinc oxide and carbon nanostructures

Nibir K. Dhar, Zhong Lin Wang, Ashok K. Sood, 2009, Defense + Commercial Sensing.

Electron Transport and Velocity Oscillations in a Carbon Nanotube

N. Goldsman, A. Wickenden, A. Akturk, 2007, IEEE Transactions on Nanotechnology.

Monte Carlo Study of Electron Transport in a Carbon Nanotube( the IEEE International Coference on SISPAD '02)

N. Goldsman, G. Pennington, 2003 .

Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs

N. Goldsman, N. Goldsman, A. Akturk, 2005, IEEE Transactions on Electron Devices.

Indium Phosphide MEMS Cantilever Resonator Sensors Utilizing a Pentacene Absorption Layer

R. Ghodssi, S. Kanakaraju, N. Goldsman, 2009, Journal of Microelectromechanical Systems.

Indium Phosphide Resonant Chemical Sensor with a Monolithically Integrated Optical Readout Scheme

R. Ghodssi, N. Goldsman, N. Goldsman, 2007, 2007 IEEE Sensors.

Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation

N. Goldsman, A. Lelis, J. McGarrity, 2005, 2005 International Conference On Simulation of Semiconductor Processes and Devices.

Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations

N. Goldsman, A. Akturk, G. Pennington, 2007 .

Ion implantation and SiC transistor performance

J. Suehle, N. Goldsman, M. Gurfinkel, 2009 .

Investigation of Drain Current Saturation in 4H-SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2007 .

Electron mobility of a semiconducting carbon nanotube

Neil Goldsman, Akin Akturk, N. Goldsman, 2003, International Semiconductor Device Research Symposium, 2003.

Statistical vulnerability analysis to study intra-chip coupling of high power microwave signals

N. Goldsman, Z. Dilli, A. Akturk, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs

N. Goldsman, A. Lelis, J. McGarrity, 2007 .

Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel

N. Goldsman, N. Goldsman, A. Akturk, 2003, 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003..

Self-Consistent Modeling of Heating and MOSFET Performance in Three-Dimensional Integrated Circuits

N. Goldsman, G. Metze, A. Akturk, 2005 .

Investigation of breakdown behavior for AlGaN HEMTs

N. Goldsman, A. Darwish, B. Huebschman, 2009, 2009 International Semiconductor Device Research Symposium.

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

N. Goldsman, A. Lelis, D. P. Ettisserry, 2014 .

Descriptive Title : “ Effects of High Power Microwaves and Chaos in 21 st Century Analog and Digital Electronics ”

E. Ott, B. Jacob, N. Goldsman, 2006 .

Time dependence of bias-stress induced threshold-voltage instability measurements

N. Goldsman, M. Gurfinkel, J. Suehle, 2007, 2007 International Semiconductor Device Research Symposium.

Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices

N. Goldsman, A. Lelis, D. Habersat, 2006 .

Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets

J. Suehle, N. Goldsman, M. Gurfinkel, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

N. Goldsman, A. Lelis, R. Green, 2020, IEEE Transactions on Electron Devices.

Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress

J. Suehle, N. Goldsman, M. Gurfinkel, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.

Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

J. Suehle, N. Goldsman, K. Cheung, 2007, 2007 IEEE International Integrated Reliability Workshop Final Report.

Terahertz current oscillations in single-walled zigzag carbon nanotubes.

N. Goldsman, A. Wickenden, A. Akturk, 2007, Physical review letters.

Modeling the limits of gate oxide scaling with a Schrodinger-based method of direct tunneling gate currents of nanoscale MOSFETs

N. Goldsman, Chung-Kuang Huang, 2001, Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516).

Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs

N. Goldsman, A. Lelis, A. Akturk, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics

Ronald Green, Neil Goldsman, Aivars J. Lelis, 2010 .

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation

N. Goldsman, A. Lelis, D. Habersat, 2009 .

Title: 3d Integration, Temperature Effects, and Modeling

B. Jacob, N. Goldsman, M. Peckerar, 2022 .

Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations

N. Goldsman, A. Lelis, A. Akturk, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

First-Principle Study of Silicon Vacancies near 4H-Silicon Carbide/Silicon Dioxide Interface

N. Goldsman, A. Akturk, 2013 .

Antenna and low noise amplifier (LNA) co-design

Q. Balzano, X. Shao, N. Goldsman, 2009, 2009 International Semiconductor Device Research Symposium.

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Nibir K. Dhar, Neil Goldsman, John H. Dinan, 2000 .

Tellurium desorption kinetics from (112) Si: Si-Te binding energy

N. Goldsman, N. Dhar, C. Wood, 2000 .

Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy

N. Goldsman, N. Dhar, Z. Xiao, 2019, Journal of Applied Physics.

Simulation of Indirect-Direct transformation phenomenon of germanium under uniaxial and biaxial strain along arbitrary orientations

N. Goldsman, N. Dhar, Ziyang Xiao, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

N. Goldsman, S. Najmaei, K. Daniels, 2022, Journal of Applied Physics.

Self-consistent calculations for n-type hexagonal SiC inversion layers

N. Goldsman, G. Pennington, 2004 .

Detailed Study of Breakdown Voltage and Critical Field in Wide Bandgap Semiconductors

N. Goldsman, A. Lelis, R. Green, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Reliability Testing of SiC MOS Devices at 500°C

N. Goldsman, Z. Dilli, A. C. Ahyi, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

A physics-based empirical pseudopotential model for calculating band structures of simple and complex semiconductors

N. Goldsman, J. McGarrity, G. Pennington, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

N. Goldsman, N. Goldsman, A. Wickenden, 2006, cond-mat/0610777.

Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

N. Goldsman, A. Lelis, D. Habersat, 2015 .

Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides

N. Goldsman, A. Lelis, D. Habersat, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Ronald Green, Neil Goldsman, Aivars J. Lelis, 2008 .

Investigation of the optical spot position on the performance of metal–semiconductor–metal structures: novel application

N. Goldsman, Chi H. Lee, F. Johnson, 2000 .

Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization

M. Peckerar, N. Goldsman, Z. Dilli, 2007, IEEE Transactions on Electron Devices.

Chemical sensor utilizing indium phosphide cantilevers and pentacene as a functionalization layer

N. Goldsman, R. Ghodssi, D. Hines, 2007, 2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS).

A Rapid Prototyping Methodology for Application-Specific Sensor Networks

Chung-Ching Shen, K. Kordari, G.L. Blankenship, 2007, 2006 International Workshop on Computer Architecture for Machine Perception and Sensing.

Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs

N. Goldsman, M. Gurfinkel, J. Suehle, 2008, IEEE Transactions on Electron Devices.

Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

D. Grider, N. Goldsman, R. Wilkins, 2019, IEEE Transactions on Nuclear Science.

Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

B. Hull, N. Goldsman, D. Grider, 2018, IEEE Transactions on Nuclear Science.

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

N. Goldsman, N. Goldsman, J. McGarrity, 2012, IEEE Transactions on Nuclear Science.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

K. A. LaBel, N. Goldsman, H. S. Kim, 2011, IEEE Transactions on Nuclear Science.

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

N. Goldsman, A. Lelis, J. McGarrity, 2006 .

Incomplete ionization in aluminum-doped 4H-silicon carbide

N. Goldsman, C. Darmody, 2019, Journal of Applied Physics.

Empirical pseudopotential band structure of 3 C , 4 H , and 6 H SiC using transferable semiempirical Si and C model potentials

N. Goldsman, G. Pennington, 2001 .

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Neil Goldsman, Aivars J. Lelis, N. Goldsman, 2005 .

A Focused Asymmetric Metal–Insulator–Metal Tunneling Diode: Fabrication, DC Characteristics and RF Rectification Analysis

M. Dagenais, Kwangsik Choi, Si Hyung Cho, 2011, IEEE Transactions on Electron Devices.

Transport simulation of bulk AlxGa1−xN and the two-dimensional electron gas at the AlxGa1−xN/GaN interface

N. Goldsman, A. Christou, M. Krishnan, 1998 .

Transport Properties of Wide Band Gap Nanotubes

N. Goldsman, J. McGarrity, A. Akturk, 2005, 2005 International Semiconductor Device Research Symposium.

Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process

N. Goldsman, P. Abshire, M. Dandin, 2009, 2009 International Semiconductor Device Research Symposium.

The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface

Neil Goldsman, Aivars J. Lelis, Akin Akturk, 2013 .

Using density functional theory to engineer direct gap germanium-tin alloy

N. Goldsman, N. Dhar, D. P. Ettisserry, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

Neil Goldsman, Jean-Marie Lauenstein, Hak S. Kim, 2010, IEEE Transactions on Nuclear Science.

Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces

N. Goldsman, A. Lelis, A. Akturk, 2014 .

Geometry enhanced asymmetric rectifying tunneling diodes

M. Peckerar, N. Goldsman, M. Dagenais, 2010 .

Numerical simulation of small-signal microwave performance of 4H–SiC MESFET

Neil Goldsman, Isaak D. Mayergoyz, M. W. Huang, 2000 .

Simulation of electron transport in (0001) and (112¯0) 4H-SiC inversion layers

N. Goldsman, G. Pennington, 2009 .

Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

N. Goldsman, A. Lelis, A. Akturk, 2012 .

Self-consistent ensemble Monte Carlo simulations show terahertz oscillations in single-walled carbon nanotubes

Neil Goldsman, Akin Akturk, N. Goldsman, 2007 .

Quantum Electron Transport in Carbon Nanotubes: Velocity Oscillations and Length Dependence

N. Goldsman, A. Wickenden, A. Akturk, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Device Behavior Modeling for Carbon Nanotube Silicon-On-Insulator MOSFETs

N. Goldsman, A. Akturk, G. Pennington, 2005, 2005 International Conference On Simulation of Semiconductor Processes and Devices.

Theory and design of field-effect carbon nanotube transistors

N. Goldsman, N. Goldsman, G. Pennington, 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

Monte Carlo simulation of electron transport in a carbon nanotube

N. Goldsman, G. Pennington, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Modeling the effective mass and Y-junction rectifying current of carbon nanotubes

N. Goldsman, G. Pennington, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Electron Transport and Velocity Oscillations in a

N. Goldsman, A. Wickenden, A. Akturk, 2007 .

Phonon-limited transport in carbon nanotubes using the Monte Carlo method

N. Goldsman, A. Akturk, G. Pennington, 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

SiC MOSFET oxide-trap two-way tunneling model

N. Goldsman, A. Lelis, D. Habersat, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits

G. Metze, N. Goldsman, A. Akturk, 2005, IEEE Transactions on Electron Devices.

Compact modeling of 0.35µm SOI CMOS technology node for 4K DC operation using Verilog-A

M. Peckerar, Neil Goldsman, Akin Akturk, 2010 .

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

N. Goldsman, D. Gundlach, K. Cheung, 2010, IEEE Transactions on Electron Devices.

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Ronald Green, Neil Goldsman, Aivars J. Lelis, 2012 .

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

N. Goldsman, A. Lelis, A. Akturk, 2015 .

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

Neil Goldsman, Aivars J. Lelis, Daniel B. Habersat, 2006 .

Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics

Dwight L. Woolard, Neil Goldsman, Isaak D. Mayergoyz, 1998 .

Energy Dependence of Atmospheric Neutron-Induced Failures in Silicon Carbide Power Devices

S. Wender, N. Goldsman, K. Gunthoti, 2022, IEEE Transactions on Nuclear Science.

The effects of radiation on the terrestrial operation of SiC MOSFETs

Neil Goldsman, Richard Wilkins, Akin Akturk, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

N. Goldsman, A. Lelis, J. McGarrity, 2006 .

Highly stable and routinely convergent 2-dimensional hydrodynamic device simulation

Neil Goldsman, N. Goldsman, Qi Lin, 1994 .

Design of a phase-shifted ZVS full-bridge front-end DC/DC converter for fuel cell inverter applications

Haoyu Wang, Alireza Khaligh, Neil Goldsman, 2014, 2014 IEEE Transportation Electrification Conference and Expo (ITEC).

Energy-driven distribution of signal processing applications across wireless sensor networks

Shuvra S. Bhattacharyya, William Plishker, Chung-Ching Shen, 2010, TOSN.

An enhanced specialized SiC power MOSFET simulation system

N. Goldsman, Z. Dilli, N. Goldsman, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Comparison of 4H-SiC impact ionization models using experiments and self-consistent simulations

N. Goldsman, A. Akturk, S. Aslam, 2008 .

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge

N. Goldsman, A. Lelis, D. Habersat, 2009 .

Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region

N. Goldsman, A. Lelis, A. Akturk, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Silicon Carbide-Silicon Dioxide Transition Layer Mobility

N. Goldsman, A. Lelis, A. Akturk, 2012 .

The effects of different silicon carbide — Silicon dioxide interface passivations on transition region mobility and transport

N. Goldsman, A. Lelis, A. Akturk, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

N. Goldsman, A. Lelis, A. Akturk, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Modeling the Effect of Conduction Band Density of States on Interface Trap Occupation and Its Influence on 4H-SiC MOSFET Performance

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs

N. Goldsman, A. Lelis, A. Akturk, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

N. Goldsman, A. Lelis, D. Habersat, 2006 .

Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs

N. Goldsman, A. Lelis, D. P. Ettisserry, 2017, IEEE Transactions on Electron Devices.

Modeling of oxygen-vacancy hole trap activation in 4H-SiC MOSFETs using density functional theory and rate equation analysis

N. Goldsman, A. Lelis, A. Akturk, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Design and development of carbon nanotube and graphene based microbolometer for IR imaging applications

Madan Dubey, Nibir K. Dhar, Xi Shao, 2012, Other Conferences.

Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability

N. Goldsman, A. Lelis, D. Habersat, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.