Gunrae Kim

Technology scaling on High-K & Metal-Gate FinFET BTI reliability

M. Choe, Kyongtaek Lee, Wonchang Kang, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Mature processability and manufacturability by characterizing VT and Vmin behaviors induced by NBTI and AHTOL test

Gunrae Kim, Jongwoo Park, S.-S. Ha, 2010, 2010 IEEE International Reliability Physics Symposium.

Characterization of plate-like Ni-Sn intermetallic compounds in Sn-Ag solder bump

S. Pae, Gunrae Kim, Sangkwon Park, 2017, 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Novel Error Detection Scheme With the Harmonious Use of Parity Codes, Well-Taps, and Interleaving Distance

Sanghyeon Baeg, Sang Hoon Jeon, Soonyoung Lee, 2014, IEEE Transactions on Nuclear Science.

Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance

Taiki Uemura, Soonyoung Lee, Sangwoo Pae, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack

Yoohwan Kim, Minjung Jin, Jinju Kim, 2018, Microelectron. Reliab..