Yang Shao

发表

Effect of ${\rm O}_{2}$ Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced $V_{\rm th}$ Shift of a-IGZO TFTs

Xiang Xiao, Wei Deng, Shipeng Chi, 2013, IEEE Transactions on Electron Devices.

A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes

Xiang Xiao, Wei Deng, Yang Shao, 2016, IEEE Transactions on Electron Devices.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

Yang Shao, Shengdong Zhang, Letao Zhang, 2016, IEEE Transactions on Electron Devices.

Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs With Metal-Induced Source/Drain Regions

Yi Wang, Yang Shao, Shengdong Zhang, 2019, IEEE Journal of the Electron Devices Society.

Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process

Xiang Xiao, Wei Deng, Yang Shao, 2015, IEEE Electron Device Letters.

ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets

Yang Shao, Shengdong Zhang, Letao Zhang, 2017, 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Indium–Tin–Oxide Thin-Film Transistors With In Situ Anodized Ta 2 O 5 Passivation Layer

Xiang Xiao, Yang Shao, Shengdong Zhang, 2016 .

Fabrication of indium-tin-oxide thin-film transistor using anodization

Xiang Xiao, Yang Shao, Shengdong Zhang, 2014, 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Xiang Xiao, Yang Shao, S. Zhang, 2017, ACS applied materials & interfaces.

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/Drain

Yang Shao, Shengdong Zhang, Xiaoliang Zhou, 2018, IEEE Journal of the Electron Devices Society.

A Multi- $V_{\mathrm {th}}$ a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions

Xiang Xiao, Wei Deng, Yang Shao, 2014, IEEE Electron Device Letters.

Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress

Dedong Han, Yi Wang, Yang Shao, 2017, IEEE Electron Device Letters.

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric

Xiang Xiao, Wei Deng, Yang Shao, 2015, IEEE Electron Device Letters.

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of a‐IGZO TFTs

Dedong Han, Yi Wang, Yang Shao, 2018 .

Indium–Tin–Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation Layer

Xiang Xiao, Yang Shao, Shengdong Zhang, 2016, IEEE Electron Device Letters.

P‐9: Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin‐Film Transistors

Dedong Han, Yi Wang, Yang Shao, 2017 .

Anodized ITO Thin‐Film Transistors

Xiang Xiao, Yang Shao, Longyan Wang, 2014 .

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

Yang Shao, Shengdong Zhang, Letao Zhang, 2018, International Conference on Electron Devices and Solid-State Circuits.

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Dedong Han, Yi Wang, Xiang Xiao, 2017, IEEE Electron Device Letters.